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CN-121973343-A - Wafer dicing method

CN121973343ACN 121973343 ACN121973343 ACN 121973343ACN-121973343-A

Abstract

The invention discloses a wafer scribing method, which aims to locate a reference position and an excircle range of a wafer, is convenient for calculating a cutting path and improves efficiency, and the wafer scribing method comprises the following steps that a wafer is fixed on a sucker, an industrial camera shoots the wafer, the straight edge position or Notch angle position of the wafer is obtained to form a reference, and the excircle range of the wafer is obtained according to the reference; setting grain size parameters, planning the arrangement of grains according to the reference and the outer edge range of the wafer, calculating to obtain a cutting path, moving a sucker according to the cutting path to cut the wafer by matching with a rotary blade, and spraying cooling water onto the rotary blade to cool the rotary blade during cutting, wherein an included angle between the spraying direction of the cooling water and the side surface of the rotary blade is 40-50 degrees, and belongs to the technical field of semiconductor manufacturing.

Inventors

  • ZHANG QING
  • CHEN ZIQIU
  • Tang Candong
  • WU WEIPING

Assignees

  • 广东长信精密设备有限公司

Dates

Publication Date
20260505
Application Date
20260209

Claims (10)

  1. 1. A wafer dicing method, comprising the steps of: the method comprises the steps that 1, a wafer is fixed on a sucker, an industrial camera shoots the wafer, the straight edge position or Notch angle position of the wafer is obtained to form a reference, and the excircle range of the wafer is obtained according to the reference; Setting a grain size parameter, planning the arrangement of grains according to the reference and the outer edge range of the wafer, and calculating to obtain a cutting path; step 3, the sucker moves according to the cutting path and is matched with the rotary blade to cut the wafer; during cutting, cooling water is sprayed onto the rotary blade to cool the rotary blade, and an included angle between the spraying direction of the cooling water and the side surface of the rotary blade is 40-50 degrees.
  2. 2. The wafer dicing method according to claim 1, characterized in that in step 3, the surface temperature of the rotary blade is not higher than 22 ℃.
  3. 3. The wafer dicing method according to claim 1, characterized in that in step 3, cooling water is sprayed to both sides of the rotary blade.
  4. 4. The wafer dicing method of claim 1, wherein in step 3, cooling water is sprayed obliquely downward onto the rotating blade.
  5. 5. The wafer dicing method according to claim 1, further comprising a water injection pipe for transporting cooling water, the water injection pipe extending in a horizontal direction, the water injection pipe being provided with a plurality of injection holes arranged at intervals along the extending direction thereof, the cooling water in the water injection pipe being injected onto the rotary blade through the injection holes.
  6. 6. The wafer dicing method according to claim 1, wherein in step 1, after the reference is obtained, the wafer is rotated by 90 °, 180 °, 270 ° in sequence, the edge coordinates of the wafer in the field of view of the industrial camera are obtained at each rotation, and all the edge coordinates are fitted into the wafer outer circle range according to the reference.
  7. 7. The wafer dicing method according to claim 1, wherein an adhesive layer is provided on the back surface of the wafer, and an adhesive film is provided between the adhesive layer and the suction cup; The thickness of the adhesive layer is L, the thickness of the adhesive film is H, L+H=0.08-0.12 mm, and L > H.
  8. 8. The method of dicing a wafer according to claim 7, wherein the thickness of the wafer is d, and in step 3, the cutting depth of the rotary blade is X, x=d+l.
  9. 9. The wafer dicing method according to claim 1, wherein when the thickness of the wafer is less than 0.3mm, the rotary blade is a rigid blade, and the diamond granularity of the rotary blade is 1200 to 3000 mesh; When the thickness of the wafer is greater than 0.3mm, the rotary blade is an elastic blade, and the diamond granularity of the rotary blade is 800-2000 meshes.
  10. 10. The wafer dicing method according to claim 9, wherein when the rotary blade is an elastic blade, if one of the length and the width of the crystal grain to be cut is smaller than 0.5mm, junk slots are provided on the outer periphery of the rotary blade.

Description

Wafer dicing method Technical Field The invention belongs to the technical field of semiconductor manufacturing, and particularly relates to a wafer dicing method. Background With the continuous development of technology, chips are of great importance to the current information age, however, the manufacturing process of chips is very complex. The wafer surface is polished after the wafer bar is cut into wafers, so that the wafer with a smooth and bright surface is obtained, then the wafer is divided to form crystal grains with the same size, and the process of dividing the wafer into the crystal grains is called dicing; because the sizes of the wafers are different, the sizes of the crystal grains to be divided are also different, the positions of the wafers are manually positioned during each scribing, and related parameters are input to calculate the cutting paths, so that the efficiency is low. Disclosure of Invention The invention mainly aims to provide a wafer scribing method, which aims to position a reference position and an excircle range of a wafer, facilitate calculation of a cutting path and improve efficiency. According to a first aspect of the present invention, there is provided a wafer dicing method comprising the steps of: the method comprises the steps that 1, a wafer is fixed on a sucker, an industrial camera shoots the wafer, the straight edge position or Notch angle position of the wafer is obtained to form a reference, and the excircle range of the wafer is obtained according to the reference; Setting a grain size parameter, planning the arrangement of grains according to the reference and the outer edge range of the wafer, and calculating to obtain a cutting path; step 3, the sucker moves according to the cutting path and is matched with the rotary blade to cut the wafer; during cutting, cooling water is sprayed onto the rotary blade to cool the rotary blade, and an included angle between the spraying direction of the cooling water and the side surface of the rotary blade is 40-50 degrees. Preferably, in step 3, the surface temperature of the rotating blade is not higher than 22 ℃. Preferably, in step 3, cooling water is sprayed to both sides of the rotary blade. Preferably, in step 3, the cooling water is sprayed obliquely downward onto the rotating blades. Preferably, the cooling water injection device further comprises a water injection pipe for conveying cooling water, wherein the water injection pipe extends along the horizontal direction, a plurality of injection holes are arranged on the water injection pipe at intervals along the extending direction of the water injection pipe, and the cooling water in the water injection pipe is injected onto the rotary blade through the injection holes. Preferably, in step 1, after obtaining the reference, the wafer is rotated by 90 °, 180 °, 270 ° in sequence, and the edge coordinates of the wafer in the field of view of the industrial camera are obtained when each rotation, and all the edge coordinates are fitted into the wafer outer circle range according to the reference. Preferably, an adhesive layer is arranged on the back surface of the wafer, and an adhesive film is arranged between the adhesive layer and the sucker; The thickness of the adhesive layer is L, the thickness of the adhesive film is H, L+H=0.08-0.12 mm, and L > H. Preferably, the thickness of the wafer is d, and in step 3, the cutting depth of the rotary blade is X, x=d+l. Preferably, when the thickness of the wafer is smaller than 0.3mm, the rotary blade is a rigid blade, and the diamond granularity of the rotary blade is 1200-3000 meshes; When the thickness of the wafer is greater than 0.3mm, the rotary blade is an elastic blade, and the diamond granularity of the rotary blade is 800-2000 meshes. Preferably, when the rotary blade is an elastic blade, junk slots are provided on the outer circumference of the rotary blade if one of the length and the width of the grain to be cut is less than 0.5 mm. One of the above technical solutions of the present invention has at least one of the following advantages or beneficial effects: According to the invention, an industrial camera is utilized to shoot a wafer, the standard of the wafer is determined by searching a straight edge or a Notch angle, the excircle range of the wafer is determined based on the standard, then the size of the crystal grains to be cut is input, the computer can plan the arrangement of the crystal grains on the wafer, so that the cutting path is determined, the sucker moves according to the cutting path, and the wafer is cut by matching with the rotary blade, so that the efficiency is higher; and the spraying direction of the cooling water is limited, so that the temperature of the rotary blade is proper, chips in the cutting process are washed away, and molten tin and edge breakage in the cutting process can be effectively prevented. Drawings The invention is further described below with reference to the