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CN-121974193-A - Low-E film plasma etching equipment

CN121974193ACN 121974193 ACN121974193 ACN 121974193ACN-121974193-A

Abstract

The invention relates to the technical field of Low-E film production, and provides Low-E film plasma etching equipment which comprises a frame, a plasma etching machine, a visual detection module, a wind-up roller, an unreeling roller, a data transmission line group, an electrical property testing module, a tensioning mechanism and a fixed roller, wherein the electrical property testing module comprises an automatic switching module, four probe measuring rollers and a deviation rectifying ring, a driving piece in the automatic switching module is in transmission connection with an external threaded pipe, three groups of four probe measuring rollers are symmetrically connected between two groups of annular shells, the data transmission probes are fixedly embedded in the external threaded pipe, current probes and voltage probes in the four probe measuring rollers are embedded on the surfaces of the roller shells, the two groups of data transmission probes can be respectively and electrically connected with the current probes and the voltage probes, the external threaded pipe is used for controlling the movement of the deviation rectifying ring, the deviation rectifying ring is arranged between the roller shells and the fixed roller in a sliding manner, the synchronous actions of probe changing and deviation rectifying are realized, and films with different widths can be stably guided to the accurate measuring areas of the measuring rollers.

Inventors

  • WU LIJUAN

Assignees

  • 上海科诺燊玖新材料科技有限公司

Dates

Publication Date
20260505
Application Date
20260304

Claims (9)

  1. 1. The utility model provides a Low-E membrane plasma etching equipment, includes frame (3) and connects plasma etching machine (1), visual detection module (4), wind-up roll (6), unreel roller (7), data transmission line group (10), straining device (8) and fixed roll (9) on frame (3), wind-up roll (6) and unreel roller (7) are used for coiling flexible base film (2), data transmission line group (10) are connected with computer system communication, its characterized in that still includes: The electric performance testing module (5), the electric performance testing module (5) comprises an automatic switching module (51), four probe measuring rollers (52) and a deviation correcting ring (53), the automatic switching module (51) comprises a driving piece (511), an annular shell (512), an external thread tube (513) and a data transmission probe (514), two groups of the annular shells (512) are fixedly connected to the surface of the external thread tube (513), the driving piece (511) is in transmission connection with the external thread tube (513), three groups of the four probe measuring rollers (52) are symmetrically connected between the two groups of the annular shells (512), the data transmission probe (514) is fixedly embedded into the external thread tube (513), and the data transmission line group (10) is in rotary connection with the data transmission probe (514); the externally threaded pipe (513) is used for controlling the deviation correcting ring (53) to move.
  2. 2. The Low-E film plasma etching apparatus according to claim 1, wherein the four-probe measuring roller (52) comprises a roller shell (521), a current probe (522) and a voltage probe (523), the current probe (522) and the voltage probe (523) are embedded in the surface of the roller shell (521), two groups of data transmission probes (514) can be electrically connected with the current probe (522) and the voltage probe (523) respectively, and the deviation correcting ring (53) is slidably arranged between the roller shell (521) and the fixed roller (9).
  3. 3. A Low-E film plasma etching apparatus according to claim 2, wherein the current probe (522) pitch and the voltage probe (523) pitch of three sets of the four-probe measuring rollers (52) are not uniform, and the flexible base film (2) can be in surface contact with the current probe (522) and the voltage probe (523).
  4. 4. A Low-E film plasma etching apparatus according to claim 2 or 3, wherein the tensioning mechanism (8) comprises a movable roller (81), an electric telescopic rod (82), a movable frame (83), a mesh roller (84), a transmission gear (85) and a pipe joint (86), the electric telescopic rod (82) is connected between the movable frame (83) and the frame (3), the movable roller (81) and the mesh roller (84) are both connected on the movable frame (83), one end of the mesh roller (84) is connected with the pipe joint (86), the pipe joint (86) is used for connecting a dust suction pump, the movable roller (81) and the mesh roller (84) are both fixedly connected with the transmission gear (85), and the two sets of transmission gears (85) are in transmission connection.
  5. 5. The Low-E film plasma etching apparatus of claim 4, wherein the four-probe measuring roller (52) further comprises an integrated circuit board (524) and a quick-release connector (525), the quick-release connector (525) is elastically arranged at two ends of the roller shell (521), the current probe (522), the voltage probe (523) and the quick-release connector (525) are electrically connected with the integrated circuit board (524), a socket main body (5122) is fixedly connected in the annular shell (512), the socket main body (5122) is rotatably connected with a socket end (5121), the quick-release connector (525) is connected with the socket end (5121), and the data transmission probe (514) is connected with the socket main body (5122).
  6. 6. The Low-E film plasma etching apparatus according to claim 1, wherein the quick release connector (525) comprises a telescopic member (5251), a plug (5252), a spring core (5253) and a wire (5254), the plug (5252) is fixedly connected with the telescopic member (5251), the plug (5252) can be connected in a plug socket (5121) in a plugging manner, the spring core (5253) is connected between the telescopic member (5251) and the roller shell (521), and the wire (5254) is connected between the plug (5252) and the integrated circuit board (524).
  7. 7. The Low-E film plasma etching apparatus according to claim 6, wherein the deviation rectifying ring (53) is fixedly connected with a bent rod (531), the bent rod (531) is fixedly connected with a nut ring (532), and the nut ring (532) is in threaded connection with the surface of the externally threaded tube (513).
  8. 8. The Low-E film plasma etching apparatus according to claim 1, wherein a bracket (31) is connected to the frame (3), a linear guide rail (311) is provided on the surface of the bracket (31), the data transmission line group (10), the driving member (511) and the external thread tube (513) are all connected to the bracket (31), and the bent rod (531) is slidably disposed in the linear guide rail (311).
  9. 9. The Low-E film plasma etching apparatus according to claim 8, wherein the movable roller (81) and the mesh roller (84) are distributed between two sets of fixed rollers (9), and the electrical performance testing module (5) is disposed above the fixed rollers (9) near one side of the wind-up roller (6).

Description

Low-E film plasma etching equipment Technical Field The invention relates to the technical field of Low-E film production, in particular to Low-E film plasma etching equipment. Background The Low-E film layer is coated on a flexible base layer, is usually a double-silver film system and a three-silver film system, has excellent solar control performance, reflects solar near infrared heat energy, is applied to front windshield and skylight glass of new energy automobile glass, is mainly used for developing a curved surface of the automobile glass from a small curved surface to a large hyperbolic surface with a large radian, is a Low-E film coating layer on a common flexible base layer, is a metal oxide such as indium tin oxide, titanium dioxide, niobium oxide and the like, is ceramic, is difficult to shape and is difficult to be attached to the shape of the latest glass through thermal integrity, is bent, is provided with a certain water vapor, is introduced into a medium layer of a certain gap in magnetron sputtering plating, can lead corrosion elements such as air and chloride ions to permeate into the medium layer, is corroded in the common flexible base layer, the use limit of the product is limited, and the excessive gap introduced into the medium layer can influence the optical characteristics of the medium layer to deviate from the original visible characteristics of a multilayer reflective film structure, and the multilayer reflective performance of the multilayer film is poor. Plating a Low-E film layer on a flexible base layer, comprising the following process steps: (1) The substrate is subjected to heat treatment, longitudinal and transverse inconformity is eliminated in the production process of the substrate, the longitudinal and transverse heat shrinkage rates of the substrate are consistent, the same order of magnitude is controlled, the crystallinity and the molecular weight of the substrate are adjusted, the proper crystallinity enables the substrate to have the required temperature resistance, deformation caused by heat generated during magnetron sputtering coating is resisted, the temperature of a coating drum is controlled to be 5 ℃ by improving the cooling efficiency of the coating drum of the magnetron coating equipment, the temperature rise of the coating is controlled to be below 150 ℃, the film is ensured not to deform when the Low-E film layer is coated, but the heat shaping treatment can be carried out at 300 ℃, and the normal heat shrinkage can be realized. (2) Adopting a plasma nanometer etching mode, etching the film layer to form a regular hexagonal island shape, wherein the island surface gap is an etching line with the size of tens to hundreds of micrometers, the width of the island surface gap is several nanometers to tens of nanometers, the etched Low-E coating layer does not influence the penetration of visible light rays and the infrared reflection of near infrared rays, the hexagonal coating layer on the surface of the base film coated with the Low-E film layer can not crack and fracture to keep the optical characteristics of the original coating layer when the base film is bent and deformed, and in other words, the coating layer is hexagonal micro-armor on the base film, and the micro-armor can change along with the deformation of the base film. (3) On a 'space-to-space' multi-target magnetron sputtering coating machine, when a base film is coated to form a film layer, plasma also prevents deposition of coating materials in an etching area when the base film moves, so that the film layer forms a non-connected hexagonal island, the perfect structure of the island surface film layer is ensured, and the optical characteristics are excellent. The flexible base film after plasma etching also needs to be subjected to online test of surface resistance, in the online test, a four-probe method is generally adopted, in the traditional four-probe resistivity measurement, the probe spacing (S) is a fixed value, when the width (W) of a measured sample is limited, the measurement result can be affected by boundary effect, correction factors corresponding to the W/S ratio are required to be used for correction, otherwise, significant errors can be generated, when the model or width parameters of the produced flexible base film are changed, the probes or the measuring rollers with the corresponding spacing can only be manually replaced, and the corresponding measuring rollers cannot be automatically switched to the working positions. Disclosure of Invention The invention aims to provide Low-E film plasma etching equipment, which aims to solve the problems of the existing Low-E film plasma etching equipment. In order to achieve the above purpose, the invention provides a Low-E film plasma etching device, which comprises a frame, a plasma etching machine, a visual detection module, a winding roller, an unwinding roller, a data transmission line group, a tensioning mechanism and a fixed