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CN-121974292-A - MEMS device and method of manufacturing the same

CN121974292ACN 121974292 ACN121974292 ACN 121974292ACN-121974292-A

Abstract

The invention provides a MEMS device and a manufacturing method thereof, wherein the manufacturing method of the MEMS device comprises the steps of providing a substrate, forming an annular blocking wall on the central area of the front surface of the substrate, forming a first semiconductor structure on the central area of the front surface of the substrate surrounded by the blocking wall, thinning the central area of the back surface of the substrate by adopting a Taiko process to form a Taiko ring on the edge area, and cutting the substrate of the central area between the blocking wall and the Taiko ring from the front surface of the substrate by adopting a laser cutting process to remove the Taiko ring. The technical scheme of the invention can avoid causing bad chips and reduce the production cost.

Inventors

  • HU YONGBAO
  • Yao Yangwen
  • XU ZEYANG

Assignees

  • 芯联集成电路制造股份有限公司

Dates

Publication Date
20260505
Application Date
20260206

Claims (10)

  1. 1. A method of manufacturing a MEMS device, comprising: providing a substrate, wherein the substrate comprises a central area and an edge area surrounding the central area; forming an annular barrier wall in the central region of the front surface of the substrate; forming a first semiconductor structure in the central area of the front surface of the substrate surrounded by the blocking wall; Thinning the central region of the back surface of the substrate by adopting a Taiko process to form a Taiko ring in the edge region; The substrate of the central region between the barrier wall and the Taiko ring is cut from the front surface of the substrate using a laser cutting process to remove the Taiko ring.
  2. 2. The method of manufacturing a MEMS device according to claim 1, wherein the first semiconductor structure comprises at least one film structure that is further formed on the top surface of the barrier wall or that is not formed on the top surface of the barrier wall.
  3. 3. The method of manufacturing a MEMS device of claim 2, wherein the top surface of the barrier wall is higher than the top surface of the at least one film structure on the front surface of the substrate, or the top surface of the barrier wall is not higher than the top surface of the at least one film structure on the front surface of the substrate, and the top surface of the at least one film structure on the top surface of the barrier wall is higher than the top surface of the at least one film structure on the front surface of the substrate.
  4. 4. The method of manufacturing a MEMS device according to claim 1, wherein the blocking wall is a closed ring shape.
  5. 5. The method of manufacturing a MEMS device according to claim 1, wherein the barrier wall is in the form of a discontinuous ring, the barrier wall comprising at least two circumferentially spaced barrier portions, adjacent ones of the barrier portions partially overlapping in a radial direction of the ring.
  6. 6. The method of manufacturing a MEMS device according to claim 1, wherein the barrier wall has a rectangular or trapezoidal shape in a direction perpendicular to the front surface of the substrate.
  7. 7. The method of manufacturing a MEMS device of claim 1, wherein after forming the first semiconductor structure and before thinning the central region of the substrate backside using a Taiko process, the method of manufacturing a MEMS device further comprises: Temporarily bonding the front surface of the substrate with a carrier sheet; After thinning the central region of the back side of the substrate using the Taiko process, the method of manufacturing the MEMS device further comprises: and de-bonding the substrate from the carrier sheet.
  8. 8. The method of manufacturing a MEMS device according to claim 7, wherein after thinning the central region of the back side of the substrate using a Taiko process and before debonding the substrate from the carrier sheet, the method of manufacturing a MEMS device further comprises: and forming a second semiconductor structure in the central area of the back surface of the substrate.
  9. 9. The method of manufacturing a MEMS device according to claim 1, wherein a horizontal distance between a dicing position of the laser dicing process and the substrate side is 3.8mm to 4.2mm.
  10. 10. A MEMS device manufactured by the method of manufacturing a MEMS device according to any one of claims 1 to 9.

Description

MEMS device and method of manufacturing the same Technical Field The invention relates to the technical field of semiconductors, in particular to an MEMS device and a manufacturing method thereof. Background As the market demand for MEMS (Micro Electro MECHANICAL SYSTEM, microelectromechanical systems) devices increases, the quality and performance requirements increase, and MEMS devices face challenges of new structures and new processes. In the manufacturing process of the MEMS device, a Taiko process is adopted to thin the central area of the back surface of the wafer, the Taiko ring of the edge area of the wafer is reserved to ensure the strength of the wafer, and a ring cutting process is adopted to cut off the Taiko ring. Because some cavities and suspension structures (such as vibrating membranes and the like) exist in the MEMS device, the ring cutting process can only adopt laser ring cutting, cannot adopt protective liquid and cannot adopt water to clean the wafer, so that the phenomenon that the protective liquid cannot be removed after entering the cavities and the suspension structures are damaged by water impact is avoided, but the effective chip area of the wafer is polluted by foreign matters such as slag generated by the laser ring cutting, and the chip is bad is caused. Disclosure of Invention The invention aims to provide a MEMS device and a manufacturing method thereof, which can avoid causing bad chips and reduce production cost. In order to achieve the above object, the present invention provides a method for manufacturing a MEMS device, comprising: providing a substrate, wherein the substrate comprises a central area and an edge area surrounding the central area; forming an annular barrier wall in the central region of the front surface of the substrate; forming a first semiconductor structure in the central area of the front surface of the substrate surrounded by the blocking wall; Thinning the central region of the back surface of the substrate by adopting a Taiko process to form a Taiko ring in the edge region; The substrate of the central region between the barrier wall and the Taiko ring is cut from the front surface of the substrate using a laser cutting process to remove the Taiko ring. Optionally, the first semiconductor structure includes at least one film structure, and the at least one film structure is further formed on the top surface of the blocking wall, or the at least one film structure is not formed on the top surface of the blocking wall. Optionally, the top surface of the blocking wall is higher than the top surface of the at least one film structure on the front surface of the substrate, or the top surface of the blocking wall is not higher than the top surface of the at least one film structure on the front surface of the substrate, and the top surface of the at least one film structure on the top surface of the blocking wall is higher than the top surface of the at least one film structure on the front surface of the substrate. Optionally, the blocking wall is a closed ring shape. Optionally, the blocking wall is in a discontinuous ring shape, the blocking wall comprises at least two blocking parts which are distributed at intervals along the circumferential direction, and adjacent blocking parts are partially overlapped in the radial direction of the ring shape. Optionally, the blocking wall has a rectangular or trapezoidal shape in a direction perpendicular to the front surface of the substrate. Optionally, after forming the first semiconductor structure and before thinning the central region of the substrate back surface using a Taiko process, the method of manufacturing the MEMS device further comprises: Temporarily bonding the front surface of the substrate with a carrier sheet; After thinning the central region of the back side of the substrate using the Taiko process, the method of manufacturing the MEMS device further comprises: and de-bonding the substrate from the carrier sheet. Optionally, after thinning the central region of the back surface of the substrate using a Taiko process and before debonding the substrate from the carrier sheet, the method of manufacturing the MEMS device further comprises: and forming a second semiconductor structure in the central area of the back surface of the substrate. Optionally, the horizontal distance between the cutting position of the laser cutting process and the side surface of the substrate is 3.8 mm-4.2 mm. The invention also provides an MEMS device manufactured by adopting the manufacturing method of the MEMS device. Compared with the prior art, the technical scheme of the invention has the following beneficial effects: 1. The manufacturing method of the MEMS device comprises the steps of providing a substrate, forming an annular blocking wall on the central area of the front surface of the substrate, forming a first semiconductor structure on the central area of the front surface of the substrate surrounded b