CN-121974400-A - Molybdenum disulfide/perovskite heterojunction composite material and preparation method and application thereof

Abstract

The invention provides a molybdenum disulfide/perovskite heterojunction composite material, and a preparation method and application thereof. The composite material is formed by growing mixed powder of lead halide and cesium halide on the surface of a molybdenum disulfide material. The preparation method comprises the steps of (a) fully mixing lead halide and cesium halide powder in a certain proportion, placing the crucible with the mixed powder in a tubular furnace, placing a molybdenum disulfide substrate above the crucible by 10cm, pumping air in the tubular furnace, setting a tubular furnace program to heat and preserve heat at a certain speed and time, and cooling the tubular furnace to room temperature after the program is finished to obtain the heterojunction composite material. The size of the composite material can reach the wafer level (2 inches), and the composite material has excellent photoelectric performance and wide application prospect in photoelectric detectors with photoconductive structures.

Inventors

• ZOU GUIFU
• CHEN YUAN
• Hu Guijia
• ZHU JUNTONG
• WANG YONGSHU
• ZHAO WENJIE
• Cao jinchuan
• GAO LIANG

Assignees

• 山东科技大学

Dates

Publication Date

20260505

Application Date

20260204

Claims (8)

1. 1. A molybdenum disulfide/perovskite heterojunction composite material is characterized in that, The heterojunction composite material is formed by growing mixed powder of lead halide and cesium halide on the surface of a molybdenum disulfide material.
2. 2. The molybdenum disulfide/perovskite heterojunction composite material of claim 1, wherein the thickness of the perovskite is 5-15 μm, and the thickness of the molybdenum disulfide is 1-5 nm.
3. 3. A method of preparing a molybdenum disulfide/perovskite heterojunction composite material as claimed in claim 1, comprising the steps of: (a) Fully mixing lead halide and cesium halide powder according to a certain proportion and placing in a crucible; (b) Placing the crucible with the mixed powder into a tubular furnace, placing a molybdenum disulfide substrate above the crucible by 10cm, and pumping out air in the tubular furnace; (c) Setting a tube furnace program to heat and preserve heat at a certain speed and time, and after the program is finished, cooling the tube furnace to room temperature to obtain the heterojunction composite material.
4. 4. The method for preparing a molybdenum disulfide/perovskite heterojunction composite material according to claim 3, wherein in the step (a), the molar ratio of the lead halide to the cesium halide is 0.01:1-10:1, and the total mass is 0.1-10 g.
5. 5. The method for preparing a molybdenum disulfide/perovskite heterojunction composite material according to claim 3, wherein in the step (C), the heating rate is 5-20 ℃ per minute.
6. 6. The method for preparing a molybdenum disulfide/perovskite heterojunction composite material according to claim 3, wherein in the step (C), the heat preservation temperature is 1000-1100 ℃.
7. 7. A method of preparing a molybdenum disulfide/perovskite heterojunction composite material as claimed in claim 3, wherein in step (c), the incubation time is 50 hours.
8. 8. The use of a molybdenum disulfide/perovskite heterojunction composite material as claimed in claim 1 in a photo detector of photoconductive structure.

Description

Molybdenum disulfide/perovskite heterojunction composite material and preparation method and application thereof Technical Field The invention relates to the field of semiconductor photoelectric materials, in particular to a molybdenum disulfide/perovskite heterojunction composite material, a preparation method and application thereof. Background Two-dimensional (2D) transition metal chalcogenides (TMDCs) represented by molybdenum disulfide have been in the hot spot of basic research and technical applications in the past decades due to tunable forbidden bands and excellent electronic and optical properties. Perovskite has been attracting increasing interest in recent years due to its excellent photoelectric properties, including tunable band gap, broad absorption spectrum (300-800 nm), high light absorption coefficient, good carrier mobility, and simple preparation process, which has led to its more competitive development prospects in various photoelectric applications, such as lasers, solar cells, light emitting diodes, photodetectors, and the like. Combining molybdenum disulfide and perovskite and building a reasonable heterostructure generally results in excellent device performance. However, the existing perovskite heterojunction technology has the problem of prominent bottleneck in large-scale preparation, that is, the existing perovskite heterojunction is limited to millimeter-scale small size, and when solution spin coating, common evaporation and other processes are adopted, the uniformity of crystal orientation is poor, the batch stability is low, and the size and performance requirements of large-scale processing of photoelectric devices cannot be matched. Therefore, the research of high-quality molybdenum sulfide/perovskite heterojunction is urgently needed, and key technical support is provided for the industrial production of high-performance photoelectric devices. Disclosure of Invention Aiming at the defects, the invention aims to provide a molybdenum disulfide/perovskite heterojunction composite material, and a preparation method and application thereof. The material prepared by the method has wide application prospect when being used as a photoelectric detector. In order to achieve the above purpose, the invention is realized by the following technical scheme: The invention provides a molybdenum disulfide/perovskite heterojunction composite material, which is formed by growing mixed powder of lead halide and cesium halide on the surface of a molybdenum disulfide material. Preferably, the perovskite has a thickness of 5-15 μm and the molybdenum disulfide has a thickness of 1-5 nm. The invention also provides a preparation method of the molybdenum disulfide/perovskite heterojunction composite material, which comprises the following steps: (a) Fully mixing lead halide and cesium halide powder according to a certain proportion and placing in a crucible; (b) Placing the crucible with the mixed powder into a tubular furnace, placing a molybdenum disulfide substrate above the crucible by 10cm, and pumping out air in the tubular furnace; (c) Setting a tube furnace program to heat and preserve heat at a certain speed and time, and after the program is finished, cooling the tube furnace to room temperature to obtain the heterojunction composite material. Preferably, in the step (a), the molar ratio of the lead halide to the cesium halide is 0.01:1-10:1, and the total mass is 0.1-10 g. Preferably, in the step (C), the temperature rising rate is 5-20 ℃ per minute. Preferably, in the step (C), the heat preservation temperature is 1000-1100 ℃. Preferably, in step (c), the incubation time is 50 hours. The invention also provides application of the molybdenum disulfide/perovskite heterojunction composite material in a photoelectric detector with a photoconductive structure. The beneficial effects of the invention are as follows: According to the invention, the perovskite single crystal material is grown on the molybdenum disulfide substrate, the thickness of the prepared molybdenum disulfide/perovskite heterojunction is 5-15 mu m, the size can reach the wafer level (2 inches), the processing integration requirements of the current photoelectric devices (such as LEDs, solar cells, photoelectric detectors and memories) can be met in terms of size and thickness, and the perovskite single crystal film is grown on the molybdenum disulfide single crystal substrate, and the energy bands of the perovskite single crystal film and the perovskite single crystal film are matched and combined with an atomic level interface, so that the efficiency of the devices can be improved. Drawings FIG. 1 is a pictorial representation of a heterojunction composite made in accordance with the present invention; FIG. 2 is an SEM image of the heterojunction composite material prepared in example 1; FIG. 3 is a cross-sectional SEM image of the heterojunction composite material prepared in example 1; FIG. 4 is an XRD pattern of the h