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CN-121974445-A - Electrode sewage treatment electrolytic device

CN121974445ACN 121974445 ACN121974445 ACN 121974445ACN-121974445-A

Abstract

The invention provides an electrode sewage treatment electrolysis device which comprises a reaction unit, wherein the reaction unit comprises a flaky anode and a flaky cathode which are arranged at intervals, a liquid chamber is formed by sealing the anode and the cathode through a sealing gasket and a spacer, the anode comprises a conductive plate, and a silicon-based BDD electrode is bonded on the surface of at least one side of the conductive plate. According to the invention, the titanium-based conductive plate is bonded with the silicon-based BDD electrode, so that mechanical strength is provided for the brittle silicon-based BDD electrode, and the problem that the silicon-based electrode is easy to fracture and damage in assembly is thoroughly solved.

Inventors

  • YIN GUOFENG
  • CUI JINQUAN
  • DUAN DONGXIA
  • XU FENGQI
  • GUO YU
  • WANG TINGYONG
  • TANG QIAN
  • LI XUNZHOU

Assignees

  • 青岛双瑞海洋环境工程股份有限公司

Dates

Publication Date
20260505
Application Date
20260302

Claims (10)

  1. 1. The electrode sewage treatment electrolysis device comprises a reaction unit (9), and is characterized in that the reaction unit (9) comprises an anode (5) and a cathode (3) which are sheet-shaped and are arranged at intervals, a liquid chamber is formed by sealing the anode (5) and the cathode (3) through a sealing gasket (2) and a spacer (4), the anode (5) comprises a conductive plate (5-1), and a silicon-based BDD electrode (5-2) is bonded on the surface of at least one side of the conductive plate (5-1).
  2. 2. The electrode sewage treatment electrolysis device according to claim 1, wherein the conductive plate (5-1) is made of titanium, the silicon-based BDD electrode (5-2) is a silicon-based BDD electrode with a diamond conductive layer deposited on one side, the surface of one side of the silicon-based BDD electrode (5-2) where the diamond conductive layer is not deposited is adhered and fixed with the conductive plate (5-1) through conductive adhesive, and sealing adhesive is coated on the periphery of the conductive adhesive and used for preventing a medium from being contacted with the conductive adhesive.
  3. 3. The electrode sewage treatment electrolysis device according to claim 1, wherein when the silicon-based BDD electrode (5-2) is bonded to the single side of the conductive plate (5-1), the electrode sewage treatment electrolysis device is sequentially provided with a cathode (3), a spacer (4), a sealing gasket (2) and an anode (5) along the thickness direction, and the side of the cathode (3) away from the anode (5) and the side of the anode (5) away from the cathode (3) are respectively provided with the sealing gasket (2) and the end plate (1) for sealing a medium.
  4. 4. The electrode sewage treatment electrolysis device according to claim 1, wherein when silicon-based BDD electrodes (5-2) are adhered to both sides of the conductive plate (5-1), the reaction unit (9) comprises two cathodes (3) and an anode (5), the two cathodes (3) are respectively arranged at both sides of the anode (5) at intervals, and when two or more reaction units (9) are arranged in the electrode sewage treatment electrolysis device, one cathode (3) is shared between the adjacent reaction units (9).
  5. 5. The electrode sewage treatment electrolysis device according to claim 4, further comprising end plates (1) provided at both ends of the reaction unit (9), wherein a sealing gasket (2) for sealing a medium is provided between the cathode (3) located at the outermost side and the end plates (1).
  6. 6. The electrode sewage treatment electrolysis device according to claim 1, wherein the anode (5) and the sealing gasket (2) are mutually attached, a spacer (4) is arranged on one side, close to the cathode (3), of the sealing gasket (2), hollow structures are respectively arranged in the centers of the sealing gasket (2) and the spacer (4), and the hollow structures in the sealing gasket (2) and the spacer (4) and the adjacent anode (5) and cathode (3) form a liquid chamber together for accommodating and reacting a liquid medium.
  7. 7. The electrode sewage treatment electrolysis device according to claim 6, wherein the material of the spacer (4) and the sealing gasket (2) is elastic material, and the hollow structure edge arranged in the center of the spacer (4) extends to form a medium inflow hole and/or a medium outflow hole.
  8. 8. The electrode sewage treatment electrolysis device according to claim 1, wherein the sealing gasket (2), the cathode (3), the spacer (4) and the anode (5) are provided with mounting and fixing holes (7), and the mounting and fixing holes (7) are inserted with fasteners (6) for integral compression and stress buffering.
  9. 9. The electrode sewage treatment electrolysis device according to claim 1, wherein the four corners of the plate body of the sealing gasket (2), the cathode (3), the spacer (4) and the anode (5) are provided with mounting positioning holes (8) for assisting in mounting.
  10. 10. The electrode sewage treatment electrolysis device according to claim 1, wherein the cathode (3) is made of one of titanium, titanium alloy, nickel base alloy or stainless steel, and the edge of the plate body of the cathode (3) is provided with an electric connection hole for externally connecting with the negative electrode of a direct current power supply.

Description

Electrode sewage treatment electrolytic device Technical Field The invention relates to the technical field of water treatment, in particular to an electrode sewage treatment electrolysis device. Background The electrochemical oxidation technology is one of the core technologies for treating organic wastewater because of the advantages of no secondary pollution, strong oxidation capability, simple operation and the like. The Boron Doped Diamond (BDD) electrode is an ideal anode material for electrochemical oxidation treatment of refractory wastewater by virtue of ultrahigh oxidation potential, excellent physicochemical stability and non-selective degradation characteristic on organic pollutants. Silicon has excellent chemical inertness in strong acid, strong alkali and organic solvent, and can be used as a matrix of BDD electrode, so that the excellent performance of the electrode can be maintained, and great potential of cost reduction and structural innovation is brought. However, compared with the traditional metal niobium matrix, silicon is a brittle material, has poorer mechanical strength and toughness, and the silicon-based BDD electrode is more likely to generate brittle fracture in the process of assembling and running of the reactor or when being impacted by external force, and the metal matrix can bear certain deformation and has better toughness, so that the silicon-based BDD electrode needs to be subjected to more careful structural design and installation protection in the industrial environment needing to bear larger mechanical stress or vibration. The patent with the application number 202311746261.3 discloses a preparation method of a gradient titanium-based boron-doped diamond film electrode, which utilizes a chemical vapor deposition method to deposit a boron-doped diamond film on the surface of a Ti/TiC nanotube gradient matrix to obtain the gradient titanium-based boron-doped diamond film electrode, reduces the problem of poor binding force caused by the thermal expansion coefficient and lattice mismatch of each phase, and obviously prolongs the service life of the titanium-based boron-doped diamond film electrode. In addition, silicon used to deposit BDD films is typically highly doped n-type or p-type silicon, which, while meeting basic conductivity requirements, is still far less conductive than metal, and silicon bodies of a semiconducting nature introduce unnecessary contact resistance, which can generate additional joule heating by the body's own resistance under high current density operating conditions, resulting in device energy efficiency losses. Patent application number 202511446530.3 discloses a silicon-based BDD electrode plate, a preparation method thereof, a reactor module and an electrochemical reactor, and a composite connection structure consisting of a clamping groove type aluminum plate, conductive silver colloid and copper foil is adopted to reduce contact resistance, but mechanical support is insufficient, the electrode plate is easily affected by vibration/stress, and long-term stability is poor. Therefore, there is a need for an electrochemical reaction apparatus that has a simple structure, good mechanical stability, and is suitable for a large-scale sewage treatment system. Disclosure of Invention In view of the above, the invention aims to provide a sewage treatment electrolysis device which has a simple structure, can be suitable for large-scale sewage treatment, has high strength and long service life, and solves the problems in the prior art. In order to achieve the above purpose, the technical scheme of the invention is realized as follows: The invention provides an electrode sewage treatment electrolysis device which comprises a reaction unit, wherein the reaction unit comprises a flaky anode and a cathode which are arranged at intervals, a liquid chamber is formed by sealing the anode and the cathode through a sealing gasket and a spacer, the anode comprises a conductive plate, and a silicon-based BDD electrode is adhered to the surface of at least one side of the conductive plate. The silicon-based BDD electrode is adhered to the conductive plate, so that omnibearing mechanical support and protection are provided for the brittle silicon-based BDD electrode, the core defect that the silicon-based electrode is easy to fracture is thoroughly overcome structurally, the mechanical stress and vibration requirements of industrial environment are met, in addition, the contact resistance and Joule heat caused by the semiconductor characteristics of the silicon substrate can be greatly reduced, and the energy loss is reduced. Further, the conductive plate is made of titanium, the silicon-based BDD electrode is a silicon-based BDD electrode with a diamond conductive layer deposited on one side, the surface of one side of the silicon-based BDD electrode, on which the diamond conductive layer is not deposited, is fixedly adhered to the conductive plate through cond