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CN-121974675-A - Zinc oxide-based target for magnetron sputtering plating of transparent conductive film and preparation method thereof

CN121974675ACN 121974675 ACN121974675 ACN 121974675ACN-121974675-A

Abstract

The invention relates to a zinc oxide-based target material for magnetron sputtering plating of a transparent conductive film and a preparation method thereof, wherein the raw materials comprise ZnO, in 2 O 3 、Ga 2 O 3 、Sc 2 O 3 、SnO 2 -WO 3 solid solution, sintering aids Li 2 CO 3 and ZrO 2 , the preparation method comprises the steps of weighing the raw material nano-powder according to mole percent, grinding and mixing the raw material nano-powder by a wet method, granulating, performing compression molding, cold isostatic pressing, and sintering at high temperature In an oxygen atmosphere to obtain the target material. The target material takes ZnO as a matrix, the performance of the target material is optimized through collaborative doping and composite phase design, and the optimized target material can prepare the transparent conductive film with photoelectric performance superior to that of ITO through magnetron sputtering, so that the cost is lower, the stability is better, and the defects of insufficient photoelectric performance and poor stability of the ZnO-based target material in the prior art are overcome.

Inventors

  • LU YINGDONG
  • LU DAIJUN
  • HUANG SHICHENG
  • XUE CHAO
  • MA CHAONING
  • ZHANG BEIWEI
  • SONG CHUNHUA
  • LIU JIANXIONG
  • LIANG YINGXIANG
  • HU TING

Assignees

  • 广西晶联光电材料有限责任公司

Dates

Publication Date
20260505
Application Date
20260205

Claims (8)

  1. 1. A zinc oxide-based target material for magnetron sputtering plating of a transparent conductive film is characterized by comprising, by mole percent, ：ZnO 92.7-94.7 mol%;In 2 O 3 2.0-2.5 mol%;Ga 2 O 3 1.0-1.5 mol%;Sc 2 O 3 0.5-0.8 mol%;SnO 2 -WO 3 solid solution 1.5-2.0: 2.0 mol%, wherein the mole ratio of SnO 2 to WO 3 is (2.9-3.1): 1, and sintering aids of Li 2 CO 3 0.2-0.3: 0.3 mol% and ZrO 2 0.1-0.2: 0.2 mol%.
  2. 2. The zinc oxide-based target for magnetron sputtering plating of a transparent conductive film according to claim 1, wherein the preparation method of the SnO 2 -WO 3 solid solution is that the solid solution is prepared by ball milling and mixing SnO 2 and WO 3 uniformly according to a molar ratio and calcining at a temperature of 700-850 ℃ for 3-8 hours.
  3. 3. The zinc oxide-based target for magnetron sputtering plating of a transparent conductive film according to claim 1 or 2, wherein the relative density of the target is not less than 98.5%.
  4. 4. The zinc oxide-based target for magnetron sputtering plating of a transparent conductive film according to claim 1 or 2, wherein the target is used for magnetron sputtering, the average light transmittance of the obtained film in a visible light region (400-800 nm) is not less than 88%, the resistivity is 5× -5 ～8×10 -5 Ω -cm, the target is placed under an environment of 85 ℃ and 85% humidity for 1000 h, and the change rate of the resistivity is not more than 5%.
  5. 5. The method for preparing a zinc oxide-based target for magnetron sputtering plating of a transparent conductive film according to any one of claims 1 to 4, wherein the target is obtained by weighing the above raw material nanopowder in mole percent, grinding and mixing by a wet method, granulating, molding, cold isostatic pressing, and sintering at a high temperature of 1300 to 1480 ℃ for 4 to 10 hours under an oxygen atmosphere.
  6. 6. The method for preparing a zinc oxide-based target for magnetron sputtering plating of a transparent conductive film according to claim 5, wherein the cold isostatic pressure is 200-250 MPa, and the pressure is maintained for 5-10 minutes.
  7. 7. The method for preparing a zinc oxide-based target for magnetron sputtering plating of a transparent conductive film according to claim 5 or 6, wherein the purity of ZnO powder is not less than 99.99% and the purity of other powder is not less than 99.9%.
  8. 8. The method for preparing a zinc oxide-based target for magnetron sputtering plating of a transparent conductive film according to claim 5 or 6, wherein the specific surface area of each raw material powder is 2-20 cm 2 /g.

Description

Zinc oxide-based target for magnetron sputtering plating of transparent conductive film and preparation method thereof Technical Field The invention belongs to the technical field of transparent conductive film materials, and particularly relates to a preparation method of a zinc oxide-based target material for magnetron sputtering plating of a transparent conductive film. Background The transparent conductive film is widely applied to the fields of touch screens, solar cells, flat panel displays and the like, and has the core performance requirements of high visible light transmittance and low resistivity. At present, indium Tin Oxide (ITO) is the most widely used transparent conductive material, but has obvious defects that indium is a rare element, the cost is high, the price fluctuation is large, the ITO film has poor chemical stability, is easy to oxidize and fail in a high-temperature and high-humidity environment, the resistivity is obviously increased, and in addition, the utilization rate of indium is low in the preparation process of an ITO target, so that the application cost is further increased. Zinc oxide (ZnO) based materials are regarded as ideal substitution materials of ITO because of the advantages of wide forbidden band (3.37 eV), high exciton binding energy (60 meV), abundant raw materials, environmental protection and the like. The existing ZnO-based target material is mostly doped with elementary substances such as Al, ga and the like (such as AZO and GZO), but the problem that the carrier concentration and the mobility are difficult to be compatible exists that the single doping can improve the carrier concentration, but the single doping easily causes the aggravation of lattice distortion, the enhancement of scattering and the reduction of the carrier mobility, the final film resistivity is difficult to break through 10 -4 omega cm, the light transmittance is also much lower than 85%, and the performance requirement of the ITO substitute material in the high-end field cannot be met. Therefore, a novel ZnO-based target material with high light transmittance, low resistivity, high stability and low cost is developed, and the novel ZnO-based target material has important significance for promoting the industrialized application of the transparent conductive film. Disclosure of Invention The invention aims to solve the technical problem of providing a zinc oxide-based target material for magnetron sputtering plating of a transparent conductive film and a preparation method thereof, wherein ZnO is used as a matrix of the target material, the performance of the target material is optimized through collaborative doping and composite phase design, and the optimized target material can prepare the transparent conductive film with photoelectric performance superior to that of ITO (indium tin oxide) through magnetron sputtering, and the target material is lower in cost and better in stability. The technical scheme for solving the technical problems is that the zinc oxide-based target for magnetron sputtering plating of the transparent conductive film comprises, by mole percent, ：ZnO 92.7-94.7 mol%;In2O3 2.0-2.5 mol%;Ga2O3 1.0-1.5 mol%;Sc2O3 0.5-0.8 mol%;SnO2-WO3 solid solution 1.5-2.0: 2.0 mol%, wherein the mole ratio of SnO 2 to WO 3 is (2.9-3.1): 1, and sintering aids Li 2CO3 0.2-0.3: 0.3 mol% and ZrO 2 0.1-0.2: 0.2 mol%. Further, the preparation method of the SnO 2-WO3 solid solution comprises the steps of ball milling and mixing SnO 2 and WO 3 uniformly according to a molar ratio, and calcining for 3-8 hours at the temperature of 700-850 ℃. Furthermore, the relative density of the target material is more than or equal to 98.5 percent. Furthermore, the target material is used for magnetron sputtering, the average light transmittance of the obtained film in the visible light region (400-800 nm) is more than or equal to 88%, the resistivity is 5 multiplied by 10 -5～8×10-5 omega cm, the temperature is 85 ℃ and the humidity environment is 85 ℃ and is placed for 1000 h, and the change rate of the resistivity is less than or equal to 5%. According to the preparation method of the zinc oxide-based target for the magnetron sputtering plating transparent conductive film, the raw material nano powder is weighed according to the mole percentage, and after wet grinding and mixing and granulating, the target is obtained through compression molding, cold isostatic pressing and high-temperature sintering at 1300-1480 ℃ for 4-10 hours in an oxygen atmosphere. Further, the cold isostatic pressure is 200-250 MPa, and maintaining the pressure for 5-10 minutes. Further, the purity of ZnO powder is more than or equal to 99.99 percent, and the purity of other powder is more than or equal to 99.9 percent. Further, the specific surface area of each raw material powder is 2-20 cm 2/g. The target formulation of the invention has the following synergistic mechanism: The ternary doping system is characterized In that