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CN-121974677-A - Tin oxide-based target for preparing transparent conductive film and preparation method

CN121974677ACN 121974677 ACN121974677 ACN 121974677ACN-121974677-A

Abstract

The invention relates to a tin oxide-based target material for preparing a transparent conductive film and a preparation method thereof, wherein SnO 2 is used as a matrix, ag, cu, la, ge elements are doped, oxide forms are selected as raw materials of doping elements, and the raw materials comprise 92-98.8% of SnO 2 , 0.5-3% of Ag 2 O, 0.3-2% of CuO, 0.2-1.5% of La 2 O 3 and 0.2-1.5% of GeO 2 . According to the invention, through multielement cooperative doping, the density of a target material is more than or equal to 98.5% by utilizing the carrier contribution effect of Ag and Cu and the lattice stabilization effect of La, the transmittance of the film prepared by magnetron sputtering in a visible light region is more than or equal to 85%, the resistivity of the film is less than or equal to 5 multiplied by 10 ‑4 omega cm, the adhesion level of the film reaches 5B in a cross-cut test (ASTM D3359), and the film has excellent mechanical property and chemical stability, and is suitable for preparing transparent conductive layers of high-end electronic devices such as flexible display, solar cells and touch screens.

Inventors

  • LU YINGDONG
  • LIANG YINGXIANG
  • HUANG SHICHENG
  • MA CHAONING
  • YE BINGYAN
  • LU DAIJUN
  • LIU JIANXIONG
  • HU TING
  • ZHANG BEIWEI
  • SONG CHUNHUA

Assignees

  • 广西晶联光电材料有限责任公司

Dates

Publication Date
20260505
Application Date
20260116

Claims (6)

  1. 1. A tin oxide-based target for preparing a transparent conductive film is characterized by taking SnO 2 as a matrix, doping Ag, cu, la, ge four elements, wherein the doped element raw materials adopt an oxide form, and the mass percentages of the components are 92-98.8% of SnO 2 , 0.5-3% of Ag 2 O, 0.3-2% of CuO, 0.2-1.5% of La 2 O 3 and 0.2-1.5% of GeO 2 .
  2. 2. The tin oxide-based target for preparing the transparent conductive film according to claim 1, wherein the density of the target is more than or equal to 98.5%.
  3. 3. A tin oxide-based target for preparing a transparent conductive film according to claim 1 or 2, wherein the transparent conductive film prepared by the target has a visible light transmittance of not less than 85%, a mobility of 40-45 cm < 2 >/(V.s), and a film resistivity of not more than 5X 10 -4 Ω.cm.
  4. 4. A method for producing a tin oxide-based target for producing a transparent conductive film according to any one of claims 1 to 3, comprising the steps of: (1) Weighing raw materials according to mass percentage; (2) Granulating, namely uniformly mixing the raw materials by adopting wet ball milling, and spraying and granulating; (3) After compression molding, cold isostatic pressing is adopted to improve the density of the biscuit; (4) Sintering, namely under the oxygen atmosphere, the temperature rising rate is 0.5-3 ℃ per minute, the sintering temperature is 1350-1550 ℃, and the temperature is kept for 4-8 hours, so that the target material is obtained.
  5. 5. The method for preparing a tin oxide-based target for preparing a transparent conductive film according to claim 4, wherein in the step (3), the cold isostatic pressure is 200-250 MPa, and the pressure is maintained for 5-10 minutes.
  6. 6. The method for preparing a tin oxide-based target for preparing a transparent conductive film according to claim 4 or 5, wherein in the step (1), the purity of SnO 2 powder is not less than 99.99%, and the purity of oxide selected as a doping element raw material is not less than 99.9%.

Description

Tin oxide-based target for preparing transparent conductive film and preparation method Technical Field The invention relates to the technical field of transparent conductive film materials, in particular to a multielement co-doped SnO 2 target for magnetron sputtering and a preparation method thereof. Background The transparent conductive film is a functional material with high light transmittance and high conductivity, and is widely applied to the fields of solar cells, touch screens, flat panel displays, flexible electronic devices and the like. The transparent conductive film materials commonly used at present mainly comprise Indium Tin Oxide (ITO), tin oxide (SnO 2), zinc oxide (ZnO) and the like. The ITO film has the most wide application due to excellent photoelectric performance, but indium resources are scarce and expensive, and the high temperature resistance and bending stability on a flexible substrate are poor, so that the application of the ITO film in the field of flexible electronics is limited. SnO 2 is used as a wide forbidden band (3.6 eV) semiconductor material, has the advantages of abundant resources, low cost, good chemical stability, high temperature resistance and the like, and is one of ideal candidate materials for replacing ITO. However, pure SnO 2 has poor conductivity and needs to introduce carriers by doping modification to improve the conductivity. In the prior art, common SnO 2 doping elements comprise single elements such as Sb, F, in and the like or a few of two elements are co-doped, but the thin film prepared by the doping target material often has the problems of difficult compromise between conductivity and light transmittance, insufficient mechanical strength, unstable sputtering rate In the magnetron sputtering process and the like, and cannot meet the high-performance requirement of high-end electronic devices on the transparent conductive thin film. Therefore, the SnO 2 target material with multi-element collaborative doping, excellent photoelectric performance and stable structure is developed, and has important significance for promoting the localization and high performance of the transparent conductive film material. Disclosure of Invention The invention aims to solve the technical problems of providing a tin oxide-based target for preparing a transparent conductive film and a preparation method thereof, wherein the Ag-Cu-La-Ge co-doped SnO 2 target is adopted, and the compactness, the conductivity and the film adhesion of the target are optimized through the multielement synergistic effect, so that the target is suitable for preparing a high-performance transparent conductive film by magnetron sputtering. The technical scheme for solving the technical problems is that the tin oxide-based target for preparing the transparent conductive film takes SnO 2 as a matrix, is doped with Ag, cu, la, ge four elements, and adopts an oxide form as a raw material of the doping elements, wherein the mass percentages of the components are 92-98.8% of SnO 2 , 0.5-3% of Ag 2 O, 0.3-2% of CuO, 0.2-1.5% of La 2O3 and 0.2-1.5% of GeO 2. Further, the density of the target material is more than or equal to 98.5%. Furthermore, the transmittance of the transparent conductive film prepared by the target material in the visible light region is more than or equal to 85%, the mobility is 40-45 cm < 2 >/(V.s), and the film resistivity is less than or equal to 5 multiplied by 10 -4 ohm.cm. The invention also provides a preparation method of the tin oxide-based target material for preparing the transparent conductive film, which comprises the following steps: (1) Weighing raw materials according to mass percentage; (2) Granulating, namely uniformly mixing the raw materials by adopting wet ball milling, and spraying and granulating; (3) After compression molding, cold isostatic pressing is adopted to improve the density of the biscuit; (4) Sintering, namely under the oxygen atmosphere, the temperature rising rate is 0.5-3 ℃ per minute, the sintering temperature is 1350-1550 ℃, and the temperature is kept for 4-8 hours, so that the target material is obtained. Further, in the step (3), the cold isostatic pressing pressure is 200-250 MPa, and the pressure is maintained for 5-10 minutes. Further, in the step (1), the purity of the SnO 2 powder is more than or equal to 99.99%, and the purity of the oxide selected as the doping element raw material is more than or equal to 99.9%. The invention adopts SnO 2 as a target substrate to provide basic crystal structure and light transmittance. The atomic radius of the doped Ag 2 O is similar to that of Sn 4+, and the doped Ag 2 O is easy to replace Sn 4+ to enter a crystal lattice, provides free electrons, and remarkably improves the conductivity of the target and the adhesive force of the film. The doped CuO can improve the sintering activity of the target material and promote the densification of crystal grains. The doped La 2O3 is used for stabilizing