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CN-121974678-A - High-pressure strontium titanate ceramic material and application thereof

CN121974678ACN 121974678 ACN121974678 ACN 121974678ACN-121974678-A

Abstract

A high-voltage strontium titanate ceramic material and application thereof belong to the technical field of lead-free dielectric ceramic materials. The high-voltage strontium titanate ceramic material has a chemical general formula of (Sr m A n B n C q D s )(Ti x E y F y )O 3 ; wherein m+2n+q+s=1, m, n, q, s >0, x+2y=1, x >0,0< y is less than or equal to 0.2, element A and element B form an AB aliovalent element pair, the sum of the element valence states of the AB aliovalent element pair is 4, at least one AB aliovalent element pair is arranged, element C and element D are respectively positive 2 valence, the constituent elements of element A, element B, element C and element D are different, element E and element F form an EF aliovalent element pair, and the sum of the element valence states of the EF aliovalent element pair is 8, and at least one EF aliovalent element pair is arranged.

Inventors

  • LIU YIQIAN
  • SUN SHILUN
  • Liu Juanfu

Assignees

  • 昆山清元电子科技有限公司

Dates

Publication Date
20260505
Application Date
20260130

Claims (8)

  1. 1. A high pressure strontium titanate ceramic material characterized by having a chemical formula (Sr m A n B n C q D s )(Ti x E y F y )O 3 ; Wherein m+2n+q+s=1, m, n, q, s >0, x+2y=1, x >0,0< y < 0.2; The element A and the element B form an AB aliovalent element pair, the sum of the element valence states of the AB aliovalent element pair is 4, at least one type of AB aliovalent element pair is arranged, the element C and the element D are respectively in positive 2 valence states, the element A, the element B, the element C and the element D are different in component elements, the element E and the element F form an EF aliovalent element pair, the sum of the element valence states of the EF aliovalent element pair is 8, and at least one type of EF aliovalent element pair is arranged.
  2. 2. The high-pressure strontium titanate ceramic material of claim 1, wherein m is greater than or equal to n is greater than or equal to q+s.
  3. 3. The high pressure strontium titanate ceramic material of claim 2, wherein q = 0.05-0.20 and s = 0.05-0.20.
  4. 4. The high pressure strontium titanate ceramic material of claim 2, wherein q = s.
  5. 5. The high pressure strontium titanate ceramic material of claim 1, wherein the AB-aliovalent element pair is selected from the group consisting of Bi-Na, bi-K, la-Na, sc-Li element pairs.
  6. 6. The high-pressure strontium titanate ceramic material according to claim 1, wherein the element C and the element D are each selected from any one of Ba, ca, mg.
  7. 7. The high pressure strontium titanate ceramic material of claim 1, wherein the EF valence element pair is selected from the group consisting of Nb-Sm, nb-Sc, ta-Al element pairs.
  8. 8. Use of the high-voltage strontium titanate ceramic material of any of claims 1-7 in high-voltage ceramic capacitors.

Description

High-pressure strontium titanate ceramic material and application thereof Technical Field The invention relates to a high-voltage strontium titanate ceramic material and application thereof, belonging to the technical field of lead-free dielectric ceramic materials. Background Pulsed power capacitors are widely used in microwave communications, hybrid electric vehicles, medical devices, and other electronic power systems. Lead-free dielectric ceramics have been attracting attention as energy storage materials for capacitors because of their unique characteristics such as high power density, ultra-fast charge/discharge rate, and excellent operational stability. The core of the capacitor is a dielectric energy storage material, wherein the ceramic energy storage dielectric has the characteristics of large dielectric constant, low dielectric loss, large dielectric property adjustability and low sensitivity to temperature. However, due to the relatively low recoverable energy density and energy storage efficiency, further development of miniaturization, light weight and integration is greatly hindered, and the severe and wide demands of the capacitor market cannot be met. Therefore, the energy storage efficiency of the dielectric ceramic must be improved to realize breakthrough of performance and application. At present, the breakdown voltage of the high-voltage ceramic capacitor is mainly realized by lifting the layer thickness, but the requirements of miniaturization, portability and light weight of modern communication equipment make the lifting of the layer thickness impractical, and besides, the improvement effect by lifting the layer thickness is limited. Disclosure of Invention Aiming at the defects in the prior art, the invention provides a high-voltage strontium titanate ceramic material and application thereof, and the high-voltage ceramic capacitor can be miniaturized and the breakdown voltage and capacitance of the high-voltage ceramic capacitor can be improved. The first aspect of the invention relates to a high-pressure strontium titanate ceramic material having a chemical formula (Sr mAnBnCqDs)(TixEyFy)O3; Wherein m+2n+q+s=1, m, n, q, s >0, x+2y=1, x >0,0< y < 0.2; The element A and the element B form an AB aliovalent element pair, the sum of the element valence states of the AB aliovalent element pair is 4, at least one type of AB aliovalent element pair is arranged, the element C and the element D are respectively in positive 2 valence states, the element A, the element B, the element C and the element D are different in component elements, the element E and the element F form an EF aliovalent element pair, the sum of the element valence states of the EF aliovalent element pair is 8, and at least one type of EF aliovalent element pair is arranged. Preferably, m is greater than or equal to n is greater than or equal to q+s. Q and s are each selected from the range of 0.05 to 0.20, preferably from the range of 0.05 to 0.10, 0.10 to 0.11, 0.11 to 0.125, 0.125 to 0.20, and more preferably q=s. The y may be selected from the following ranges, such as 0.01 to 0.05, 0.05 to 0.08, 0.08 to 0.12, 0.12 to 0.17, 0.17 to 0.20, etc. For example, y may be 0.01, 0.05, 0.1, 0.15, 0.2, etc. For some specific embodiments, the AB heterovalent element pair is selected from Bi-Na, bi-K, la-Na, sc-Li element pairs, wherein the combination of La-Na and Sc-Li promotes basic electrical properties by alkali metals, with lower leakage conductance by transition metal elements. For some specific embodiments, the element C and the element D are respectively selected from any one element of Ba, ca and Mg, and a synergistic effect is generated through the element C and the element D, so that uniformity and dielectric stability of nano grains are improved, microcracks caused by thermal stress are reduced, and high-voltage reliability of the material is improved. For some specific embodiments, the EF valence element pair is selected from the group consisting of Nb-Sm, nb-Sc, ta-Al element pairs, wherein Nb, ta provide a framework for the perovskite B site, sm, sc, al increase insulation, decrease leakage conductance. The second aspect of the invention also relates to the application of the high-voltage strontium titanate ceramic material in a high-voltage ceramic capacitor. Compared with the prior art, the invention has the following technical effects: The invention obtains the high-performance dielectric material by doping equivalent elements and replacing partial equivalent elements with alien elements, and improves the breakdown voltage and capacitance of the high-voltage ceramic capacitor while keeping the miniaturization of the high-voltage ceramic capacitor. Detailed Description The present invention will be described in detail with reference to the following embodiments. The experimental procedure, in which specific conditions are not noted in the examples, was performed according to conventional methods and conditions. E