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CN-121974711-A - Silicon carbide ceramic setter plate based on casting forming process, preparation method and application

CN121974711ACN 121974711 ACN121974711 ACN 121974711ACN-121974711-A

Abstract

The invention relates to the technical field of preparation of silicon carbide ceramics, in particular to a silicon carbide ceramic setter plate based on a tape casting forming process, a preparation method and application thereof, wherein silicon carbide is taken as a core matrix, a boron carbide-carbon black composite auxiliary agent system is introduced in a targeted manner to match with a segmented ladder calcining flow, the dynamic process of auxiliary agent liquid phase formation and matrix particle rearrangement is matched to eliminate thermal stress, the catalytic densification effect of the auxiliary agent is exerted to the maximum extent, abnormal growth of matrix grains at high temperature is avoided, the method realizes the precise regulation and control of the structure and the performance of the silicon carbide ceramic setter plate, simultaneously provides a high-quality structural foundation for the synergistic effect of matrix-auxiliary agent-calcination by combining a casting molding process, enables the silicon carbide powder and the composite auxiliary agent to form a uniformly distributed microstructure in a green body, further strengthens the synergistic effect of the three, realizes the promotion of the density uniformity, the mechanical strength, the high-temperature stability and the like of the large-size ultrathin setter plate, and solves the problems of high-temperature deformation and cracking of the silicon carbide setter plate prepared by the prior method.

Inventors

  • LI KAI
  • ZHAO CHENXUAN
  • GE WEI
  • HU CHANGYU

Assignees

  • 西安石油大学

Dates

Publication Date
20260505
Application Date
20260127

Claims (10)

  1. 1. The preparation method of the silicon carbide ceramic setter plate based on the tape casting technology is characterized by comprising the following raw materials in parts by weight: 1700-1800 parts of silicon carbide, 10-15 parts of boron carbide, 5-10 parts of carbon black, 5-8 parts of fish oil, 200-300 parts of absolute ethyl alcohol, 80-100 parts of butanone, 20-30 parts of butyl benzyl phthalate, 20-30 parts of refrigerating oil, 10-15 parts of polyvinyl butyral powder and 5-10 parts of cyclohexanone; The preparation method comprises the following steps: uniformly mixing silicon carbide, boron carbide, carbon black, fish oil, ethanol and butanone according to a proportion to obtain a mixture; Sequentially adding butyl benzyl phthalate, refrigerating oil, polyvinyl butyral powder and cyclohexanone into the mixture according to a proportion, and uniformly mixing to obtain casting slurry; removing bubbles from the casting slurry, carrying out casting molding, and drying to obtain a prefabricated silicon carbide ceramic setter plate; And (3) sintering the prefabricated silicon carbide ceramic setter plates in a sectional gradient manner, and cooling the prefabricated silicon carbide ceramic setter plates in a sectional gradient manner to obtain the silicon carbide ceramic setter plates.
  2. 2. The method for preparing a silicon carbide ceramic setter plate based on a casting molding process according to claim 1, wherein before the step of sintering the prefabricated silicon carbide ceramic setter plate in a sectional gradient manner, the method further comprises the step of removing impurities from the prefabricated silicon carbide ceramic setter plate, and is specifically characterized in that: calcining the prefabricated silicon carbide ceramic setter plate at 200 ℃ or more and 300 ℃ or less to remove the low-molecular residual solvent; Calcining the prefabricated silicon carbide ceramic setter plate at the temperature of more than or equal to 200 ℃ and less than 300 ℃ after calcining at the temperature of more than or equal to 300 ℃ and less than 500 ℃ to remove the macromolecular binder; Calcining the prefabricated silicon carbide ceramic setter plate at the temperature of more than or equal to 300 ℃ and less than 500 ℃ after calcining, and removing residual carbon to finish impurity removal on the prefabricated silicon carbide ceramic setter plate; The impurity removal step is carried out under the condition of introducing nitrogen, and the impurity content of the final prefabricated silicon carbide ceramic setter plate is less than 0.2% by mass.
  3. 3. The method for producing a silicon carbide ceramic setter plate based on a casting process according to claim 2, characterized in that the time for calcining the prefabricated silicon carbide ceramic setter plate at 200 ℃ or more and less than 300 ℃ is 1 to 2 hours, the time for calcining the prefabricated silicon carbide ceramic setter plate at 300 ℃ or more and less than 500 ℃ is 2 to 4 hours, the time for calcining the prefabricated silicon carbide ceramic setter plate at 500 ℃ or more and less than 650 ℃ is 1 to 2 hours, and the temperature rise rate of the whole impurity removal step is 0.5 to 1 ℃/min.
  4. 4. The preparation method of the silicon carbide ceramic setter plate based on the casting forming process of claim 1 is characterized in that the vacuum degree is controlled to be-0.1 to-0.09 MPa in the process of removing bubbles from the casting slurry, the bubble removing duration is 30-40 min, and drying of the casting slurry after casting forming is performed in a natural environment in an air drying mode.
  5. 5. The method for preparing the silicon carbide ceramic setter plate based on the casting molding process as claimed in claim 1, wherein the method for sintering the sectional gradient is as follows: calcining the prefabricated silicon carbide ceramic setter plate for 1-2 hours at 1200-1300 ℃ under the protection of argon gas flow, and completing the first-stage calcination; Calcining the prefabricated silicon carbide ceramic bearing plate for 2-3 hours at 2150-2250 ℃ after completing the first-stage calcination under the protection of argon gas flow, and completing the second-stage calcination; and at the end of the second stage calcination, improving the argon gas flow, and maintaining for 0.5-1 h to finish the sectional gradient sintering of the prefabricated silicon carbide ceramic setter plate.
  6. 6. The method for producing a silicon carbide ceramic setter plate based on a casting process according to claim 5, wherein at the end of the calcination in the second stage, the flow rate of the argon gas flow before the improvement of the argon gas flow is 0.5 to 1l/min, and the flow rate of the argon gas flow after the improvement of the argon gas flow is 1.5 to 2.5l/min.
  7. 7. The method for preparing the silicon carbide ceramic setter plate based on the casting molding process according to claim 5, wherein the temperature rising rate of the first stage calcination is 10-13 ℃ per minute, and the temperature rising rate of the second stage calcination is 5-8 ℃ per minute.
  8. 8. The method for preparing the silicon carbide ceramic setter plate based on the casting molding process as claimed in claim 1, wherein the method for cooling in a sectional gradient manner is as follows: and (3) under the condition of maintaining an argon atmosphere, firstly cooling the prefabricated silicon carbide ceramic setter plate subjected to sectional gradient sintering to 1500-1600 ℃ at the speed of 3-6 ℃ per minute, then cooling to 800-600 ℃ at the speed of 5-8 ℃ per minute, and finally naturally cooling to room temperature to obtain the silicon carbide ceramic setter plate.
  9. 9. A silicon carbide ceramic setter plate characterized by being prepared by the method for preparing a silicon carbide ceramic setter plate based on a tape casting process according to any one of claims 1-8.
  10. 10. The use of the silicon carbide ceramic setter plate of claim 9 in the field of photovoltaic power generation.

Description

Silicon carbide ceramic setter plate based on casting forming process, preparation method and application Technical Field The invention relates to the technical field of preparation of silicon carbide ceramics, in particular to a silicon carbide ceramic setter plate based on a tape casting forming process, a preparation method and application. Background In recent years, photovoltaic power generation technology has been rapidly developed, the scale of the technology is continuously enlarged, and certain progress is made in the technology. However, to truly stand in the market place and achieve sustainable development, the photovoltaic industry must rely on its own competitiveness, i.e., by continuously increasing conversion efficiency and reducing manufacturing costs. The improvement of the conversion efficiency means that more electric energy can be generated on the photovoltaic modules with the same area, so that the energy utilization efficiency is improved, and the reduction of the manufacturing cost is beneficial to reducing the overall cost of photovoltaic power generation, so that the photovoltaic power generation has more price advantage in the energy market, and the wide application of the photovoltaic power generation is promoted. Due to the advantages of abundant resource reserves, mature preparation technology, relatively high conversion efficiency and the like of the crystalline silicon material, the crystalline silicon battery gradually takes the main stream in the photovoltaic market. However, with the continued development of the photovoltaic industry, the efficiency of crystalline silicon cells is increasing gradually towards its theoretical limit. In order to further exploit its potential to achieve higher conversion efficiencies, it is necessary to optimize each process extremely while seeking innovative breakthroughs in critical materials. From the manufacturing flow of crystalline silicon batteries, a number of complex and critical links are involved, and subtle changes in each link can have a significant impact on the final performance of the battery. Therefore, the intensive research and improvement of the preparation process and key materials are key to the continuous progress of the crystalline silicon battery technology. In the preparation process of the battery piece, a high-temperature process link is important. Wherein, the P/B diffusion forms p-n junction and the low pressure chemical vapor deposition prepares silicon nitride antireflection/passivation layer, which plays a decisive role in the performance of the battery. The uniformity, repeatability and cleanliness of the process are directly related to key indexes such as conversion efficiency, stability and service life of the battery. To achieve high quality performance of these processes, however, is highly dependent on the setter plates carrying large numbers of silicon wafers and subjected to harsh thermal chemical environments. The burning bearing plate is used as a supporting carrier of the silicon wafer in the high-temperature process, not only needs to bear severe conditions such as high temperature and chemical corrosion, but also needs to ensure that the silicon wafer keeps stable position and state in the process, and meanwhile, pollution to the silicon wafer is avoided. Therefore, the quality of the performance of the burning plate directly influences the quality and efficiency of the whole battery piece preparation process, and further has an important influence on the development of the photovoltaic industry. At present, in the photovoltaic field, the burning-bearing plate material used for the high-temperature process link of the battery piece preparation is mainly high-purity quartz. However, high purity quartz is mainly dependent on importation, and imported high purity quartz sand is strictly controlled in quantity and specification. The limitation on the supply makes the photovoltaic industry in China face a larger risk in raw material acquisition, and once the international market supply has a problem, the production progress and cost control of the photovoltaic enterprise are directly affected, so that the overall development of the photovoltaic industry is restricted. Meanwhile, as the battery technology is continuously evolved to higher efficiency, a process temperature window is gradually narrowed, stricter requirements are put on process uniformity and impurity control, and the improvement of orders of magnitude is presented. In this case, the inherent limitations of the quartz material itself become more apparent. Under the long-term high temperature environment, the quartz plate is easy to deform, so that the carried silicon wafer is bent, the fragment rate is increased, the production cost is increased, and the production efficiency and quality of the battery piece are also affected. Secondly, the heat conductivity coefficient of quartz is relatively low, and in the rapid temperature rising and fa