CN-121974716-A - Method for bonding aluminum nitride ceramics by using inorganic ceramic slurry

Abstract

The invention discloses a method for bonding aluminum nitride ceramics by using inorganic ceramic slurry, which belongs to the technical field of aluminum nitride ceramics and comprises the following steps of preparing glass powder by using 5% -10% of magnesium oxide, 20% -30% of calcium oxide, 20% -30% of aluminum oxide and 30% -55% of silicon dioxide, preparing fine glass powder with the particle size of 4-6 microns for later use, preparing bonding slurry, mixing 10% -20% of glass powder, 20% -30% of AlN and 50% -70% of IPA prepared in the previous step, forming mixed powder, mixing 70% -80% of mixed powder with 5% -10% of binder and 15% -20% of TPO, forming bonding slurry, screen printing, placing the prepared bonding slurry on a screen, sintering, and placing a prepared aluminum nitride shaft on a printed aluminum nitride disc for sintering.

Inventors

• SHI ZHEYUAN
• YAN JIAFAN
• LI JUN

Assignees

• 君原电子科技(海宁)有限公司

Dates

Publication Date

20260505

Application Date

20250712

Claims (1)

1. 1. A method for bonding aluminum nitride ceramics using an inorganic ceramic slurry, the method comprising the steps of: MgO-CaO-Al 2 O 3 –SiO 2 glass powder preparation: The glass powder preparation material comprises 5% -10% of magnesium oxide, 20% -30% of calcium oxide, 20% -30% of aluminum oxide and 30% -55% of silicon dioxide, wherein the total amount of the magnesium oxide, the calcium oxide, the aluminum oxide and the silicon dioxide is 100%, the materials are mixed in a high-pressure dispersion mixer for at least 1 hour, then are melted in an aluminum oxide crucible, the melting temperature is 1500 ℃, the melting time is 1 hour, the melted glass is rapidly cooled to form glass powder, and the glass powder is ground in a planetary mill for at least 2 hours to obtain fine glass powder with the particle size of 4-6 microns for standby; and (3) preparation of laminating slurry: Mixing 10% -20% of glass powder, 20% -30% of AlN and 50% -70% of IPA prepared in the previous step, wherein the total amount of the glass powder, the AlN and the IPA is 100%, then using a dispersing mixer to mix and disperse the powder for at least 10min, using a stirrer to stir for at least 10min, putting the powder into an oven to dry at least 2h at the temperature of 120 ℃ after stirring uniformly, taking out the powder after drying, using a high-speed rotary grinding crusher to depolymerize the powder into mixed powder, then using a kneader to carry out kneading on 70% -80% of the mixed powder with 5% -10% of binder and 15% -20% of TPO for 20min, then using a three-roll machine, wherein the sum of the proportions of the mixed powder, the binder and the TPO is 100%, carrying out primary mixing at the interval of 0.5mm, primary mixing at the interval of 0.3mm, carrying out preparation at the interval of 0.1mm for 3 times, and finally using a homogenizer 2000rpm and carrying out 5min to carry out homogenizing treatment to form bonding slurry; Screen printing: placing the prepared laminating slurry on a screen plate for printing, wherein the distance between a printing aluminum nitride disc and the screen plate is 5mm, and placing the printing aluminum nitride disc and the screen plate in an oven for drying at 120 ℃ for at least 2 hours after printing; Sintering: And placing the prepared aluminum nitride shaft on a printed aluminum nitride disc, applying 10Mpa force, insulating at 1200-1300 ℃ for 2h, insulating at 1500-1600 ℃ for 10h in the first stage in an N 2 atmosphere, and finally performing heat treatment at 1400 ℃ for 3h to finish sintering.

Description

Method for bonding aluminum nitride ceramics by using inorganic ceramic slurry Technical Field The invention relates to the technical field of aluminum nitride ceramics, in particular to a method for bonding aluminum nitride ceramics by using inorganic ceramic slurry. Background In the semiconductor manufacturing process, the wafer processing process has many working procedures, such as plasma immersion, ion doping and implantation, physical and chemical vapor deposition, and each working procedure of the processing process needs the electrostatic chuck to absorb and clamp the wafer. At present, aluminum oxide and aluminum nitride are used as main materials for preparing the electrostatic chuck, and the electrostatic chuck has good insulativity, dielectric property, wear resistance and hardness and is widely applied. Aluminum nitride has better performance than aluminum oxide, good thermal conductivity and insulation, low dielectric constant, dielectric loss, expansion coefficient matching with the wafer, and other properties, and has been widely used in semiconductor manufacturing. When manufacturing an aluminum nitride ceramic electrostatic chuck, an aluminum nitride shaft and the aluminum nitride electrostatic chuck are bonded together, and an inorganic slurry is used for bonding in order to ensure bonding strength and high insulation during use. However, the conventional inorganic slurry is difficult to bond and has low strength, and therefore, a method for bonding aluminum nitride ceramics using an inorganic ceramic slurry is required. Disclosure of Invention The invention aims to provide a method for bonding aluminum nitride ceramics by using inorganic ceramic slurry so as to solve the problems in the background technology. In order to solve the technical problems, the technical scheme of the invention is as follows: A method of bonding aluminum nitride ceramics using an inorganic ceramic slurry, the method comprising the steps of: MgO-CaO-Al 2O3–SiO2 glass powder preparation: The glass powder preparation material comprises 5% -10% of magnesium oxide, 20% -30% of calcium oxide, 20% -30% of aluminum oxide and 30% -55% of silicon dioxide, wherein the total amount of the magnesium oxide, the calcium oxide, the aluminum oxide and the silicon dioxide is 100%, the materials are mixed in a high-pressure dispersion mixer for at least 1 hour, then are melted in an aluminum oxide crucible, the melting temperature is 1500 ℃, the melting time is 1 hour, the melted glass is rapidly cooled to form glass powder, and the glass powder is ground in a planetary mill for at least 2 hours to obtain fine glass powder with the particle size of 4-6 microns for standby; and (3) preparation of laminating slurry: Mixing 10% -20% of glass powder, 20% -30% of AlN and 50% -70% of IPA prepared in the previous step, wherein the total amount of the glass powder, the AlN and the IPA is 100%, then using a dispersing mixer to mix and disperse the powder for at least 10min, using a stirrer to stir for at least 10min, putting the powder into an oven to dry at least 2h at the temperature of 120 ℃ after stirring uniformly, taking out the powder after drying, using a high-speed rotary grinding crusher to depolymerize the powder into mixed powder, then using a kneader to carry out kneading on 70% -80% of the mixed powder with 5% -10% of binder and 15% -20% of TPO for 20min, then using a three-roll machine, wherein the sum of the proportions of the mixed powder, the binder and the TPO is 100%, carrying out primary mixing at the interval of 0.5mm, primary mixing at the interval of 0.3mm, carrying out preparation at the interval of 0.1mm for 3 times, and finally using a homogenizer 2000rpm and carrying out 5min to carry out homogenizing treatment to form bonding slurry; Screen printing: placing the prepared laminating slurry on a screen plate for printing, wherein the distance between a printing aluminum nitride disc and the screen plate is 5mm, and placing the printing aluminum nitride disc and the screen plate in an oven for drying at 120 ℃ for at least 2 hours after printing; Sintering: And placing the prepared aluminum nitride shaft on a printed aluminum nitride disc, applying 10Mpa force, insulating at 1200-1300 ℃ for 2h, insulating at 1500-1600 ℃ for 10h in the first stage in an N 2 atmosphere, and finally performing heat treatment at 1400 ℃ for 3h to finish sintering. By adopting the technical scheme, the method has the following beneficial effects: The glass powder comprises magnesium oxide and calcium oxide, the sintering temperature can be effectively reduced, aluminum nitride is used as a main structural framework, liquid phase filling is formed by MgO-CaO-Al 2O3–SiO2, the strength of the generated bonding layer is high, the resistivity is high, and the thermal expansion coefficient is similar to that of aluminum nitride ceramics. Drawings FIG. 1 is a scanning image of an electron microscope according to embodiment 1 of the present in