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CN-121974729-A - Process method for improving service life of coating

CN121974729ACN 121974729 ACN121974729 ACN 121974729ACN-121974729-A

Abstract

The invention relates to a process method for improving the service life of a coating, which comprises the following steps of S1, carrying out heat treatment on a graphite substrate, S2, growing a first silicon carbide coating on the surface of the graphite substrate after heat treatment by using trichloromethylsilane at a preset growth temperature, then carrying out first annealing treatment at the preset growth temperature of 1/3-2/3, S3, growing a second silicon carbide coating on the first silicon carbide coating by using a first reactant consisting of trichloromethylsilane and silicon tetrachloride at the preset growth temperature, then carrying out second annealing treatment at the preset growth temperature of 1/3-2/3, and S4, growing a third silicon carbide coating on the second silicon carbide coating by using a second reactant consisting of trichloromethylsilane and silicon tetrachloride at the preset growth temperature of 80% -100%, and then carrying out third annealing treatment at the preset growth temperature of 1/3-2/3. The process method improves the corrosion resistance of the coating and finally prolongs the service life of the coating.

Inventors

  • HU RENHAO
  • HE SHAOLONG
  • Ding Liuning

Assignees

  • 浙江六方半导体科技有限公司

Dates

Publication Date
20260505
Application Date
20251212

Claims (10)

  1. 1. A process for improving the life of a coating comprising the steps of: s1, carrying out heat treatment on a graphite substrate; s2, growing a first silicon carbide coating on the surface of the graphite substrate after heat treatment by using trichloromethylsilane at a preset growth temperature, and then performing first annealing treatment at the preset growth temperature of 1/3-2/3; s3, growing a second silicon carbide coating on the first silicon carbide coating by using a first reactant consisting of trichloromethylsilane and silicon tetrachloride at the preset growth temperature, and then performing second annealing treatment at the preset growth temperature of 1/3-2/3; S4, growing a third silicon carbide coating on the second silicon carbide coating by using a second reactant consisting of trichloromethylsilane and silicon tetrachloride at the preset growth temperature of 80% -100%, and then performing third annealing treatment at the preset growth temperature of 1/3-2/3.
  2. 2. The process for improving the life of a coating according to claim 1, wherein in step S1, the heat treatment is performed under a hydrogen atmosphere at 1000 to 1300 ℃ for 10 to 30 minutes.
  3. 3. The process for improving the life of a coating according to claim 1, wherein in step S1, the coefficient of thermal expansion of the graphite substrate before the heat treatment is Density is of 。
  4. 4. The process for improving the lifetime of a coating according to claim 1, wherein said preset growth temperature is 1200-1400 ℃.
  5. 5. The process for improving the life of a coating according to claim 1, wherein the ratio of the film thickness of the first silicon carbide coating to the film thickness of the second silicon carbide coating to the film thickness of the third silicon carbide coating is (4-10): (5-14): (1-2).
  6. 6. The process for improving the life of a coating according to claim 1, wherein the first annealing treatment is carried out for a period of time ranging from 10 to 20 minutes.
  7. 7. The process for improving the life of a coating according to claim 1, wherein the ratio of trichlorosilane to silicon tetrachloride in the first reactant is (1-10): (1-10), and the second annealing treatment time is 10-20min.
  8. 8. The process for improving the life of a coating according to claim 1, wherein the ratio of trichlorosilane to silicon tetrachloride in the second reactant is (1-10): 1-10, and the third annealing treatment time is 10-20min.
  9. 9. The process for improving the life of a coating according to claim 1, wherein in step S2, a carbon interface layer is formed by depositing propylene on the heat-treated graphite substrate at 1100-1200 ℃ and the thickness of the carbon interface layer is 200-300nm, and then the first silicon carbide coating is formed by deposition.
  10. 10. The process for improving the life of a coating according to claim 1, wherein the first silicon carbide coating, the second silicon carbide coating and the third silicon carbide coating form a silicon carbide coating, and the thickness of the silicon carbide coating is 100-300um.

Description

Process method for improving service life of coating Technical Field The invention relates to the field of semiconductor growth, in particular to a process method for improving the service life of a coating. Background In the third generation of semiconductor manufacturing processes, graphite coatings are widely and critically used in the semiconductor field due to their excellent thermal conductivity, electrical conductivity, chemical stability and mechanical properties. The following are main application scenarios and advantages of the graphite coating, namely 1 a key component in a high-temperature process, 2 plasma Etching (Etching), 3 ion implantation (Ion Implantation), 4 semiconductor packaging and thermal management, and 5 photolithography. In the prior art, due to respective factors such as heat unbalance, stress unbalance and the like between a graphite substrate and a coating, the service life of a graphite coating piece is lower, the graphite coating piece is easy to damage, meanwhile, the use environment of a graphite coating product is extremely harsh, and environments such as high temperature, high corrosion, high acidity or high alkalinity exist, and the environments have extremely high requirements on the corrosion resistance of the coating. Disclosure of Invention The invention provides a process method for improving the service life of a coating process, which is used for improving the stability of a silicon carbide coating product in the processes of heat unbalance and stress unbalance. In order to achieve the above purpose, the invention adopts the following technical scheme: A process for improving the life of a coating comprising the steps of: s1, carrying out heat treatment on a graphite substrate; s2, growing a first silicon carbide coating on the surface of the graphite substrate after heat treatment by using trichloromethylsilane at a preset growth temperature, and then performing first annealing treatment at the preset growth temperature of 1/3-2/3; s3, growing a second silicon carbide coating on the first silicon carbide coating by using a first reactant consisting of trichloromethylsilane and silicon tetrachloride at the preset growth temperature, and then performing second annealing treatment at the preset growth temperature of 1/3-2/3; S4, growing a third silicon carbide coating on the second silicon carbide coating by using a second reactant consisting of trichloromethylsilane and silicon tetrachloride at the preset growth temperature of 80% -100%, and then performing third annealing treatment at the preset growth temperature of 1/3-2/3. Preferably, a third silicon carbide coating is grown on the second silicon carbide coating with a second reactant consisting of trichloromethylsilane and silicon tetrachloride at 80% -90% of the preset growth temperature. Compared with the prior art, the invention has the beneficial effects that: According to the process method, the components and the proportion of reactants are changed, so that the crystal grains of the produced sic coating in different crystal lattice orientations are regulated, the thermal stress and the tensile stress of lattice mismatch between the coating and graphite in the repeated temperature rise and fall process are regulated, meanwhile, the crystal lattice size of the surface of the coating is regulated, the compactness of the coating is improved, the corrosion resistance of the coating is further improved, and the service life of the coating is finally prolonged. Drawings FIG. 1 is a schematic diagram of a product prepared by a process for improving the lifetime of a coating according to an embodiment of the present invention; fig. 2 is an SEM image of a graphite substrate of the process for improving the lifetime of a coating according to example 1 of the present invention. 1. The graphite substrate, 2, coating layers, 21, a first silicon carbide coating layer, 22, a second silicon carbide coating layer, 23 and a third silicon carbide coating layer. Detailed Description The invention will now be described in more detail with reference to the accompanying drawings, to which it should be noted that the description is given by way of illustration only and not by way of limitation. Various embodiments may be combined with one another to form further embodiments not shown in the following description. As shown in fig. 1, the embodiment of the invention discloses a process method for improving the service life of a coating, which comprises the following steps: s1, performing heat treatment on a graphite substrate 1; s2, growing a first silicon carbide coating 21 on the surface of the graphite substrate 1 after heat treatment by using trichloromethylsilane at a preset growth temperature, and then performing first annealing treatment at the preset growth temperature of 1/3-2/3; S3, growing a second silicon carbide coating 22 on the first silicon carbide coating 21 by using a first reactant consisting of trichloromethyl