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CN-121975092-A - Reversible crosslinking reaction resin derivative, self-healing GaN chip plastic package material and application thereof

CN121975092ACN 121975092 ACN121975092 ACN 121975092ACN-121975092-A

Abstract

The invention relates to the technical field of semiconductor packaging, in particular to a reversible crosslinking reaction resin derivative, a self-healing GaN chip plastic packaging material and application thereof. The invention provides a reversible crosslinking reaction resin derivative which comprises at least one aromatic compound containing furan functional groups and having any one or a combination of at least two of structural formulas shown in formulas (1) to (4), and a bismaleimide compound having a structure shown in formula (5). The reversible crosslinking reaction resin derivative provided by the invention constructs a reversible DA system by using the furan functional group-containing aromatic compound and the bismaleimide compound, is crosslinked, degradable and recombined, endows self-healing property, resists high temperature, is suitable for GaN devices, and provides a core foundation for high-performance packaging materials.

Inventors

  • LU XIANGJUN
  • XIE AN
  • WANG YIFAN
  • Xiao Yaoyang
  • CAO CHUNYAN
  • SUN DONGYA
  • YAN YUJIE
  • HUANG HAI
  • WANG YI

Assignees

  • 厦门理工学院

Dates

Publication Date
20260505
Application Date
20251231

Claims (10)

  1. 1. A reversible crosslinking reaction resin derivative is characterized in that, Comprising the following steps: at least one furan-functional aromatic compound having any one or a combination of at least two of the structural formulae (1) to (4), and A bismaleimide compound having a structure represented by formula (5); ; ; ; ; ; wherein n is 100-10000, m is 100-10000.
  2. 2. A self-healing GaN chip plastic package material is characterized in that, Comprising the following steps: 10 to 20 mass% of a resin derivative which is a crosslinked product formed by a reversible Diels-Alder reaction of an aromatic compound containing a furan functional group and a bismaleimide compound; 60 to 80 mass% of an inorganic filler; the balance of the auxiliary agent.
  3. 3. The self-healing GaN chip molding compound according to claim 2, wherein, The furan functional group-containing aromatic compound is selected from any one or a combination of at least two of structural formulas shown in formulas (1) to (4): ; ; ; ; wherein n is 100-10000, m is 100-10000.
  4. 4. The self-healing GaN chip molding compound according to claim 1, wherein, The bismaleimide compound has a structure represented by formula (5): 。
  5. 5. The self-healing GaN chip molding compound according to claim 1, wherein, The auxiliary agent comprises at least one of a flame retardant, a release agent, a coupling agent, a colorant, a low stress agent and an ion capturing agent.
  6. 6. The self-healing GaN chip molding compound according to claim 5, wherein, The flame retardant is at least one of brominated epoxy, antimony oxide and metal hydroxide, and/or The release agent is at least one of natural wax and synthetic wax, and/or The coupling agent is silane coupling agent and/or The colorant is carbon black, and/or The low stress agent is at least one of silicone oil and carboxyl terminated nitrile rubber, and/or The ion trapping agent is hydrotalcite.
  7. 7. The self-healing GaN chip molding compound according to claim 5, wherein, The content of the flame retardant is less than 10 mass percent, and/or The content of the release agent is less than 1 mass%, and/or The content of the coupling agent is less than 1 mass percent, and/or The content of the colorant is less than 1 mass percent, and/or The content of the low stress agent is less than 1 mass percent, and/or The content of the ion scavenger is less than 1 mass%.
  8. 8. The self-healing GaN chip molding compound according to claim 2, wherein, The inorganic filler is silicon dioxide.
  9. 9. The self-healing GaN chip molding compound according to claim 2, wherein, The resin derivative is selected from any one or a combination of at least two of structural formulas shown in formulas (6) to (9): ; ; ; ; wherein n is 100-10000, m is 100-10000.
  10. 10. Use of the self-healing GaN chip molding compound of any of claims 2-9 in semiconductor chip packaging.

Description

Reversible crosslinking reaction resin derivative, self-healing GaN chip plastic package material and application thereof Technical Field The invention relates to the technical field of semiconductor packaging, in particular to a reversible crosslinking reaction resin derivative, a self-healing GaN chip plastic packaging material and application thereof. Background GaN (gallium nitride) is used as a core representative of a third generation wide bandgap semiconductor material, and by virtue of the outstanding characteristics of ultrahigh compressive strength, extremely low conduction loss, excellent high-temperature stability, ultrahigh electron mobility and the like, the GaN (gallium nitride) shows irreplaceable advantages in high-power, high-frequency and high-temperature application scenes, and becomes a core support material in key fields such as a new energy automobile power module, a photovoltaic inverter, a 5G base station radio frequency device, an aerospace power system, a rail transit traction converter and the like. With the maturation of Si substrate GaN epitaxy technology and the breakthrough of the performance of a SiC substrate GaN device, a GaN power device taking a High Electron Mobility Transistor (HEMT) as a core realizes the spanning development in the aspects of energy conversion efficiency, power density and miniaturization integration, compared with a traditional silicon-based semiconductor device, the on-resistance of the GaN device can be reduced by one order of magnitude under the same power level, the withstand voltage value is improved by 3-5 times, the switching frequency can reach the MHz level, the device volume and the system energy consumption are greatly reduced, and the power electronic equipment is promoted to be upgraded to the high-efficiency, compact and lightweight directions. However, the high power density and high switching frequency characteristics of GaN devices place severe demands on their packaging materials far beyond those of conventional silicon-based devices. As a key barrier between the device and the external environment, the packaging material is required to have excellent electrical insulation property, mechanical support strength, wet heat aging resistance and heat matching property with the chip, the lead frame and the substrate, and severe heat cycle impact generated when the GaN device works is required to be dealt with, wherein the GaN chip frequently experiences high temperature-normal temperature alternation (the instantaneous temperature difference can reach more than 100 ℃) in the high-frequency switching process, so that continuous interface heat stress is generated between the packaging material and the chip and between the packaging material and the metal interconnection structure due to mismatch of thermal expansion Coefficients (CTE), and meanwhile, the packaging material is damaged by mechanical stress in the device assembly process, vibration impact in long-term service, accidental scraping and the like. At present, the most mainstream packaging material in the semiconductor packaging field is a traditional epoxy plastic packaging material (EMC), which occupies more than 90% of market share by virtue of the advantages of low cost, simple forming process, good insulating property and the like, but has obvious defects in the severe service environment of a GaN device, wherein the traditional epoxy plastic packaging material is of an irreversible cross-linking structure, lacks damage self-repairing capability, is extremely easy to generate microcracks under the continuous thermal cycle and mechanical stress effects, has small initial size (micron level), is difficult to discover through conventional detection and can be continuously expanded along with the stress cycle, and meanwhile, interface fatigue caused by thermal cycle can cause layering between the plastic packaging material and the surface of the GaN chip, a lead frame coating or a ceramic substrate to form a tiny air gap. The existence of the air gap not only seriously hinders heat conduction, so that the local temperature of the device is continuously increased (further aggravates thermal stress and crack propagation), but also damages the sealing property of the package, so that water vapor, pollutants and the like invade the device to cause corrosion of a metal interconnection structure and failure of a passivation layer on the surface of the chip, and when the microcrack is expanded to continuously expand to penetrate through the whole packaging layer or layering area, the device insulation performance is finally collapsed, a circuit is shorted, and even the chip is directly exposed to the external environment, so that the device is permanently failed. Aiming at the core pain point, the prior art relieves the crack generation by optimizing the filler proportion of the epoxy plastic packaging material (such as increasing the content of high-heat-conductivity inorganic filler),