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CN-121975359-A - Composite coating for semiconductor device and preparation method thereof

CN121975359ACN 121975359 ACN121975359 ACN 121975359ACN-121975359-A

Abstract

The application belongs to the technical field of semiconductors, and discloses a composite coating for a semiconductor device and a preparation method thereof, wherein the preparation method comprises the following preparation steps of adding organic resin and carburant into an alcohol solvent, and uniformly mixing to obtain a resin solution; adding a tantalum source and a phase accelerator into an alcohol solvent, stirring and mixing to obtain a tantalum solution, coating a resin solution and a tantalum solution on the surface of a substrate, heating, solidifying, carbonizing and cooling to obtain a composite coating containing glassy carbon and tantalum carbide, wherein the composite coating is of a single-layer structure or a double-layer structure, the single-layer structure is a composite single-layer coating containing glassy carbon and tantalum carbide, and the double-layer structure is of a double-layer coating structure of a glassy carbon layer, a glassy carbon and tantalum carbide composite layer from bottom to top on one side of the surface of the substrate. The composite coating prepared by the method can effectively improve the density of the composite coating, and further improve the corrosion resistance of the composite coating in a plasma environment.

Inventors

  • QIU YUEWU
  • SU YIQUAN
  • ZHU JIANHUA

Assignees

  • 广州志橙半导体有限公司

Dates

Publication Date
20260505
Application Date
20260407

Claims (9)

  1. 1. A method for preparing a composite coating for a semiconductor device, comprising the steps of: s1, adding an organic resin and a carburant into an alcohol solvent, and uniformly mixing to obtain a resin solution, wherein the carburant is used for improving the carbon residue content of the carbonized organic resin; S2, adding a tantalum source and a phase accelerator into an alcohol solvent, stirring and mixing to obtain a tantalum solution, wherein the phase accelerator is a nonmetallic phase accelerator for reducing the temperature of tantalum carbide generated by the tantalum source; S3, coating a resin solution and a tantalum solution on the surface of the substrate, heating, solidifying, carbonizing and cooling to obtain a composite coating containing glassy carbon and tantalum carbide, wherein the composite coating has a single-layer structure or a double-layer structure; the single-layer structure is a composite single-layer coating containing glassy carbon and tantalum carbide; the double-layer structure is a double-layer coating structure of a glassy carbon layer and a glassy carbon and tantalum carbide composite layer from bottom to top from one side of the surface of the substrate.
  2. 2. The method for preparing the composite coating for the semiconductor device according to claim 1, wherein the alcohol solvent is ethanol and/or methanol, the mass ratio of the organic resin to the carburant to the alcohol solvent in the step S1 is 1 (0.1-0.3) (0.5-1), the tantalum source to the phase accelerator in the step S2 is 0.3-0.7) (0.05-0.2) (1), and the carbonization temperature in the step S3 is 1600-1800 ℃.
  3. 3. The method for preparing the composite coating for the semiconductor device according to claim 1, wherein the organic resin in the step S1 is phenolic resin and/or epoxy resin, the carburant comprises at least one of nano carbon powder, carbon black and graphene, the tantalum source in the step S2 is tantalum powder and/or tantalum pentoxide, the particle size of the tantalum source is 50-500 nm, and the phase promoter comprises at least one of boric acid, ammonium phosphate and urea.
  4. 4. The method for manufacturing a composite coating for a semiconductor device according to claim 1, wherein when the composite coating is of a single-layer structure, step S3 includes: S3.1, adding an amino modifier into the resin solution, and heating to 60-90 ℃ for reflux condensation reaction for 2-4 hours to obtain an ammonia modified resin solution, wherein the mass of the amino modifier is 3-8 wt% of the mass of the organic resin; S3.2, adding a diketone complexing agent into the tantalum solution, and stirring for 30-60 min at normal temperature to obtain a complexing modified tantalum solution, wherein the mass of the diketone complexing agent is 10-20wt% of the mass of the tantalum source; S3.3, mixing an ammonia modified resin solution and a complexing modified tantalum solution, stirring at room temperature for 30-60 min to obtain a composite solution, coating the composite solution on a substrate, curing at 100-120 ℃ for 1-2 h, then placing in an inert atmosphere, heating to 600-900 ℃ for carbonization for 1-2 h, heating to 1600-1800 ℃ for carbonization for 1-3 h, and cooling to room temperature to obtain the composite single-layer coating containing glassy carbon and tantalum carbide, wherein the mass ratio of the ammonia modified resin solution to the complexing modified tantalum solution is1 (0.4-0.6).
  5. 5. The method for manufacturing a composite coating for a semiconductor device according to claim 1, wherein when the composite coating is of a double-layer structure, step S3 comprises: s3.1, dividing the resin solution into two equal parts, directly coating the first part of resin solution on the surface of a substrate, and pre-drying at 80-100 ℃ for 15-30 min to obtain a resin coating; S3.2, mixing the second part of resin solution with the tantalum solution to obtain a composite solution, coating the composite solution on the resin coating, curing for 1-2 hours at 100-120 ℃, heating to 600-900 ℃, carbonizing for 1-2 hours, heating to 1600-1800 ℃ and carbonizing for 1-3 hours, and cooling to room temperature to obtain the double-layer coating structure containing the glassy carbon layer, the glassy carbon and the tantalum carbide composite layer.
  6. 6. The method for manufacturing a composite coating for a semiconductor device according to claim 5, wherein when the composite coating is of a double-layer structure, step S3 further comprises: s3.1, dividing the resin solution into two equal parts, adding an amino modifier into the first part of resin solution, heating to 60-90 ℃ for reflux condensation reaction for 2-4 hours to obtain an ammonia modified resin solution, then coating the ammonia modified resin solution on the surface of a substrate, and predrying for 15-30 minutes at 80-100 ℃ to obtain a resin coating, wherein the mass of the amino modifier is 3-8wt% of the mass of the organic resin contained in the first part of resin solution; s3.2, adding a diketone complexing agent into the tantalum solution, stirring for 30-60 min at normal temperature to obtain a complexing modified tantalum solution, and then mixing with a second resin solution and an aldehyde group-containing interface enhancer to obtain a composite solution, wherein the mass of the diketone complexing agent is 10-20wt% of the mass of a tantalum source, and the mass of the aldehyde group-containing interface enhancer is 3-8wt% of the mass of an organic resin contained in the second resin solution; And S3.3, coating the composite solution on a resin coating, curing for 1-2 hours at 100-120 ℃, heating to 600-900 ℃ for carbonization for 1-2 hours, heating to 1600-1800 ℃ for carbonization for 1-3 hours, and cooling to room temperature to obtain a double-layer coating structure containing a glassy carbon layer, a glassy carbon and tantalum carbide composite layer.
  7. 7. The method for preparing a composite coating for a semiconductor device according to claim 4 or 6, wherein the amino modifier in step S3.1 comprises at least one of diethylenetriamine, polyethyleneimine and triethylenetetramine, and the diketone complexing agent in step S3.2 comprises at least one of acetylacetone, benzoylacetone and furoyl acetone.
  8. 8. The method for producing a composite coating for a semiconductor device according to claim 6, wherein the interface enhancer containing an aldehyde group in step S3.2 comprises at least one of furfural, 5-hydroxymethylfurfural, terephthalaldehyde.
  9. 9. A composite coating for a semiconductor device, characterized in that the semiconductor base composite coating is produced by a method for producing a composite coating for a semiconductor device according to any one of claims 1 to 8.

Description

Composite coating for semiconductor device and preparation method thereof Technical Field The application relates to the technical field of semiconductors, in particular to a composite coating for a semiconductor device and a preparation method thereof. Background The glass carbon coating is a carbon layer which is compact in structure, high in purity and unique in glassy structure and finally converted into a complex decomposition and polycondensation reaction of organic matters by carrying out high-temperature pyrolysis treatment on an organic precursor (such as phenolic resin) under the protection of inert gas. Thanks to its unique microstructure, the glassy carbon coating combines the hardness of ceramics with the smoothness of glass, has excellent thermal stability, high conductivity and excellent chemical inertness, and in particular, shows extremely strong corrosion resistance to most acid-base salt solutions. These outstanding combinations of properties make them exhibit great application potential in many high-end technical fields, especially in line with the stringent requirements of semiconductor manufacturing processes. In the semiconductor industry, the coating has been widely applied to front-end substrate processing and doping processes, middle-end thin film deposition and photoetching processes, and back-end packaging and testing links, so that the cleanliness of wafers and the stability of device performance are effectively ensured. However, in practical applications, particularly in a plasma environment consisting of a large number of electrons, ions, neutral radicals and excited atoms, the effect on the coating mainly includes two aspects, namely, a physical sputtering effect, that is, high-energy ions accelerated by an electric field bombard the surface of the coating, and direct break of C-C bonds through momentum transfer, so that carbon atoms or clusters are sputtered off, and the surface is physically damaged and loose in structure, and a chemical reaction etching effect, that is, strong active free radicals generated in the plasma react with the carbon atoms on the surface of the coating through chemical adsorption to generate volatile products to be extracted, so that materials are continuously lost. Under the synergistic effect of the two, the compact structure of the surface of the coating is gradually destroyed, and micropores and defects are increased, so that the inherent corrosion resistance of the coating is irreversibly attenuated. Disclosure of Invention The invention aims to solve the technical problem of lowering corrosion resistance of a glassy carbon coating due to lowering compactness in a plasma environment. In order to solve the technical problems, the invention provides a preparation method of a composite coating for a semiconductor device, which comprises the following preparation steps: s1, adding an organic resin and a carburant into an alcohol solvent, and uniformly mixing to obtain a resin solution, wherein the carburant is used for improving the carbon residue content of the carbonized organic resin; S2, adding a tantalum source and a phase accelerator into an alcohol solvent, stirring and mixing to obtain a tantalum solution, wherein the phase accelerator is a nonmetallic phase accelerator for reducing the temperature of tantalum carbide generated by the tantalum source; S3, coating a resin solution and a tantalum solution on the surface of the substrate, heating, solidifying, carbonizing and cooling to obtain a composite coating containing glassy carbon and tantalum carbide, wherein the composite coating has a single-layer structure or a double-layer structure; the single-layer structure is a composite single-layer coating containing glassy carbon and tantalum carbide; the double-layer structure is a double-layer coating structure of a glassy carbon layer and a glassy carbon and tantalum carbide composite layer from bottom to top from one side of the surface of the substrate. In some embodiments, the alcohol solvent is ethanol and/or methanol, the mass ratio of the organic resin to the carburant to the alcohol solvent in the step S1 is 1 (0.1-0.3) (0.5-1), the tantalum source to the phase promoter in the step S2 is 0.3-0.7) (0.05-0.2) (1), and the carbonization temperature in the step S3 is 1600-1800 ℃. In some embodiments, in step S1, the organic resin is phenolic resin and/or epoxy resin, the carburant comprises at least one of nano carbon powder, carbon black and graphene, in step S2, the tantalum source is tantalum powder and/or tantalum pentoxide, the particle size of the tantalum source is 50-500 nm, and the phase accelerator comprises at least one of boric acid, ammonium phosphate and urea. In some embodiments, when the composite coating is a single layer structure, step S3 includes: S3.1, adding an amino modifier into the resin solution, and heating to 60-90 ℃ for reflux condensation reaction for 2-4 hours to obtain an ammonia modified resin solutio