CN-121976076-A - Preparation method of copper-clad diamond-tin-base alloy composite material

Abstract

A preparation method of a copper-clad diamond-tin-base alloy composite material comprises the steps of weighing 50-90 wt.% of tin-base alloy powder and the balance of copper-clad diamond powder, uniformly mixing, and then carrying out vacuum sintering at 10-25 MPa and 160-200 ℃ to obtain the copper-clad diamond-tin-base alloy composite material. The method has strong process controllability, can effectively improve the interface combination of diamond and a tin-base alloy matrix, and the prepared composite material is expected to have high heat conduction, low thermal expansion coefficient and good mechanical property, and is suitable for thermal management and encapsulation of high-power electronic devices.

Inventors

• JIA YUANWEI
• KONG YANPING
• LUO XIAOBIN
• MIN ZHAOYOU
• ZHOU XUAN
• WU JIANXUN
• LU HONGBO
• GUO SHAOXIONG
• WAN WEICHAO
• WANG QIN
• WANG JIAJUN

Assignees

• 云南锡业新材料有限公司

Dates

Publication Date

20260505

Application Date

20260209

Claims (7)

1. 1. The preparation method of the copper-clad diamond-tin-based alloy composite material is characterized by comprising the following steps of: S1, weighing tin-base alloy powder and copper-coated diamond powder, wherein the content of the tin-base alloy powder is 50 wt-90 wt%, and the balance is the copper-coated diamond powder; s2, uniformly mixing tin-base alloy powder and copper-coated diamond powder; S3, placing the uniformly mixed powder in the step S2 into a vacuum hot-pressing sintering furnace, and performing vacuum sintering at a sintering temperature range of 160-200 ℃ in a pressure range of 10 MPa-25 MPa to obtain the copper-clad diamond-tin-base alloy composite material, wherein the copper-clad diamond-tin-base alloy composite material consists of a tin-base alloy continuous matrix and copper-clad diamond reinforcing phases uniformly dispersed in the matrix, a multi-level interface structure is formed around diamond particles, and a diamond core, a copper plating layer combined with the diamond core, a continuous copper-tin intermetallic compound transition layer generated by the reaction of copper and tin and a tin-base alloy matrix are sequentially formed from inside to outside.
2. 2. The method for preparing a copper-clad diamond-tin-base alloy composite material according to claim 1, wherein the tin-base alloy powder is powder of one or more of pure Sn, sn-Cu-based alloy, sn-Ag-Cu-based alloy, and Sn-Sb-based alloy.
3. 3. The method for producing a copper-clad diamond-tin-based alloy composite according to claim 1 or 2, wherein the grain size of the tin-based alloy powder is 20 to 45 μm.
4. 4. The method for preparing the copper-clad diamond-tin-based alloy composite material according to claim 1, wherein the copper-clad diamond powder contains 20 wt-60 wt% of copper and the balance of diamond.
5. 5. The method for producing a copper-clad diamond-tin-based alloy composite according to claim 1 or 4, wherein the diamond particle size of the copper-clad diamond powder is 30 to 50 μm.
6. 6. The method for preparing a copper-clad diamond-tin-base alloy composite material according to claim 1, wherein in the step S2, tin-base alloy powder and copper-clad diamond powder are placed in a ball milling tank of a ball mill, and grinding balls are added and mixed for 3-5 hours.
7. 7. The method for preparing the copper-clad diamond-tin-base alloy composite material according to claim 1, wherein the vacuum sintering in the step S3 is performed by maintaining a temperature rising speed of 10-20 ℃ per minute in a temperature range from room temperature to 120 ℃, a temperature rising speed of 5-10 ℃ per minute in a temperature range from 120 ℃ to sintering temperature, and maintaining the temperature and pressure for 5-15 min at the sintering temperature.

Description

Preparation method of copper-clad diamond-tin-base alloy composite material Technical Field The invention relates to the technical field of metal matrix composite material preparation, in particular to a preparation method of a diamond-tin-base alloy composite material with high heat conduction and low thermal expansion, which is used in the field of electronic packaging. Background With the rapid development of fifth generation mobile communication technology (5G), high power lasers, advanced radars, and high performance computing chips, electronic devices are evolving toward high power density, high integration, and miniaturization. The problem of heat accumulation in the operation process of the electronic device is increasingly severe, and extremely severe requirements are put on packaging heat dissipation materials, namely, the packaging heat dissipation materials are required to have extremely high heat conductivity coefficients so as to rapidly conduct out heat, and meanwhile, the packaging heat dissipation materials are required to have low thermal expansion coefficients matched with semiconductor chips so as to reduce thermal stress, and sufficient strength and reliable sealing performance are maintained. Tin-based alloys (e.g., sn-Cu, sn-Ag-Cu) are commonly used solders in electronic packaging due to their excellent solderability, good plasticity, and moderate cost. However, pure tin-based alloys have poor thermal conductivity (about 60-70W/(m·k)), and high thermal expansion coefficients (about 22×10 -6/K), and cannot meet the heat dissipation requirements of high-power devices. For this reason, researchers often introduce a high thermal conductivity, low thermal expansion reinforcing phase (e.g., diamond, silicon carbide, aluminum nitride, etc.) into the tin matrix to make metal matrix composites. Among them, diamond is considered as an ideal reinforcement due to its extremely high thermal conductivity (2000W/(mK)) and extremely low thermal expansion coefficient (1×10 -6/K). The diamond-tin composite material can be used for key heat dissipation parts of high-power devices, such as thermal interface materials between chips and heat dissipation cover plates, so as to realize efficient heat management of electronic devices. However, in the preparation of diamond-tin-based alloy composite materials, the poor wettability of diamond surface with most metals (including tin) results in weak bonding of diamond to matrix interface during the preparation process, and a large number of pores and defects exist, which can seriously reduce the thermal conductivity and mechanical properties of the composite materials. Disclosure of Invention Aiming at the problems that the interface bonding is weak, high heat conduction and high reliability are difficult to obtain simultaneously and the like commonly existing in the existing diamond/tin-based composite material, the invention aims to provide a copper-clad diamond/tin-based alloy composite material and a preparation method thereof, so as to solve the core problem that the heat conduction performance and reliability of the composite material are poor due to the fact that the interface bonding is weak and the structure is uncontrollable in the background art. In order to achieve the above purpose, the present invention adopts the following technical scheme: The preparation method of the copper-clad diamond-tin-base alloy composite material comprises the following steps: S1, weighing tin-base alloy powder and copper-coated diamond powder, wherein the content of the tin-base alloy powder is 50 wt-90 wt%, and the balance is the copper-coated diamond powder; s2, uniformly mixing tin-base alloy powder and copper-coated diamond powder; S3, placing the uniformly mixed powder in the step S2 into a vacuum hot-pressing sintering furnace, and performing vacuum sintering at a sintering temperature range of 160-200 ℃ in a pressure range of 10 MPa-25 MPa to obtain the copper-clad diamond-tin-base alloy composite material, wherein the copper-clad diamond-tin-base alloy composite material consists of a tin-base alloy continuous matrix and copper-clad diamond reinforcing phases uniformly dispersed in the matrix, a multi-level interface structure is formed around diamond particles, and a diamond core, a copper plating layer combined with the diamond core, a continuous copper-tin intermetallic compound transition layer generated by the reaction of copper and tin and a tin-base alloy matrix are sequentially formed from inside to outside. Further, the tin-based alloy powder is powder of one or more of pure Sn, sn-Cu-based alloy, sn-Ag-Cu-based alloy and Sn-Sb-based alloy. Further, the grain size of the tin-base alloy powder is 20-45 mu m. Further, in the copper-coated diamond powder, the copper content is 20 wt-60 wt%, and the balance is diamond content. Further, the diamond particle size of the copper-coated diamond powder is 30-50 mu m. Further, in the step S2, the tin-base alloy po