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CN-121976165-A - Mounting structure capable of reducing direct current port cracks

CN121976165ACN 121976165 ACN121976165 ACN 121976165ACN-121976165-A

Abstract

The invention belongs to the technical field of electrostatic adsorption plates, and discloses a mounting structure capable of reducing direct current port cracks. According to the invention, the nickel-aluminum alloy transition layer is arranged and the coating structure of the direct current port area is optimized, so that a thermal expansion coefficient gradient structure is formed among different materials, thermal stress and internal stress concentration caused by unmatched thermal expansion coefficients and mechanical installation stress can be effectively relieved in the coating preparation and subsequent use processes, meanwhile, the nickel-aluminum alloy layer fills microscopic pores on the surface of the first ceramic layer and interface gaps around the direct current port in a molten state in the spraying process, and a continuous and compact physical barrier is formed after solidification, so that crack initiation conditions are reduced from the source, the coating cracking risk of the direct current port area is remarkably reduced, and the service life of the whole structure is prolonged.

Inventors

  • FENG XIAOYU
  • BU QINGLEI
  • Zhou Chenrui
  • LI PANG

Assignees

  • 光晋科技(合肥)有限公司

Dates

Publication Date
20260505
Application Date
20260225

Claims (7)

  1. 1. The mounting structure capable of reducing direct current port cracks comprises a base material (1) and is characterized in that a first ceramic layer (2) is arranged on the base material (1), a nickel-aluminum alloy layer (3) is arranged on the first ceramic layer (2), a tungsten layer (4) is arranged on the nickel-aluminum alloy layer (3), a second ceramic layer (5) is arranged on the tungsten layer (4), and the nickel-aluminum alloy layer (3) is used as a transition layer between the first ceramic layer (2) and the tungsten layer (4) and used for relieving thermal stress generated by mismatch of thermal expansion coefficients of the first ceramic layer and the tungsten layer, so that coating cracks of a direct current port area are reduced.
  2. 2. The mounting structure capable of reducing direct current port cracks, as set forth in claim 1, characterized in that the nickel-aluminum alloy layer (3) is formed by thermal spraying, micro-pores and gaps on the surface of the first ceramic layer (2) are filled and covered in the spraying process, and a compact physical barrier is formed after solidification, wherein the spraying thickness of the nickel-aluminum alloy layer (3) is preferably 60 μm.
  3. 3. The mounting structure capable of reducing direct current port cracks according to claim 2, wherein the nickel-aluminum alloy layer (3) has a thermal expansion coefficient between that of the first ceramic layer (2) and that of the tungsten layer (4) to form a thermal expansion coefficient gradient transition structure.
  4. 4. A mounting structure capable of reducing cracks in a DC port according to claim 3, wherein the tungsten layer (4) is a conductive layer for electrostatic adsorption and is electrically connected to an external power supply through the DC port.
  5. 5. The mounting structure for reducing direct current port cracks according to claim 4, wherein the nickel-aluminum alloy layer (3) can block or passivate microcrack paths extending from the first ceramic layer (2) to the tungsten layer (4) and the second ceramic layer (5).
  6. 6. A mounting structure capable of reducing cracks in a DC port according to claim 5, wherein the first ceramic layer (2) and the second ceramic layer (5) are both insulating ceramic coatings for electrical insulation and structural protection of the tungsten layer (4).
  7. 7. The mounting structure capable of reducing direct current port cracks according to claim 6, wherein after the first ceramic layer (2) is formed on the substrate (1), a direct current port is mounted in a direct current port area corresponding to the first ceramic layer (2), then a nickel-aluminum alloy layer (3) is formed on the surfaces of the first ceramic layer (2) and the direct current port in a spraying mode, a tungsten layer (4) is formed on the nickel-aluminum alloy layer (3), finally a second ceramic layer (5) is formed on the tungsten layer (4), and the direct current port is arranged in the direction from the substrate (1), penetrates through the first ceramic layer (2) and the nickel-aluminum alloy layer (3) in sequence, and is electrically connected with the bottom surface of the tungsten layer (4).

Description

Mounting structure capable of reducing direct current port cracks Technical Field The invention belongs to the technical field of electrostatic adsorption plates, and particularly relates to a mounting structure capable of reducing cracks of a direct current port. Background The electrostatic adsorption plate is a core functional component working by utilizing the electrostatic adsorption principle, is widely applied to precise process scenes such as semiconductor manufacturing, vacuum coating and the like, is used for stably fixing workpieces such as wafers, substrates and the like, and adopts a ceramic layer-tungsten layer-ceramic layer composite structure; in production, firstly, a first layer of ceramic is sprayed on a substrate, then a tungsten layer is deposited, finally, a second layer of ceramic layer is sprayed on the surface of the tungsten layer, a direct current Port (DC-Port) is used as a core component of the electrostatic adsorption plate and is responsible for connecting the tungsten layer and connecting a power supply at the bottom of the substrate so as to realize a conductive function and further promote the tungsten layer to ionize charges to generate electrostatic force for adsorption, however, the problem that gaps exist between the direct current Port and the first layer of ceramic layer often occur after the installation process and the installation are finished, so that microcracks are generated in a coating deposited next, and in addition, when the gaps between the direct current Port and the electrostatic adsorption plate are filled by adopting a mechanical installation mode and using glue, the existence of fine gaps is still difficult to completely avoid. The mechanical installation mode also easily causes the crack of the electrostatic adsorption plate coating, thereby affecting the service life of the electrostatic adsorption plate coating and obviously shortening the service life. Disclosure of Invention The present invention is directed to a mounting structure capable of reducing cracks in a dc port, so as to solve the problems set forth in the background art. In order to achieve the aim, the mounting structure capable of reducing the direct current port cracks comprises a substrate, wherein a first ceramic layer is arranged on the substrate, a nickel-aluminum alloy layer is arranged on the first ceramic layer, a tungsten layer is arranged on the nickel-aluminum alloy layer, a second ceramic layer is arranged on the tungsten layer, and the nickel-aluminum alloy layer is used as a transition layer between the first ceramic layer and the tungsten layer and used for relieving thermal stress generated by mismatch of thermal expansion coefficients of the first ceramic layer and the tungsten layer, so that the coating cracks of a direct current port area are reduced. Preferably, the nickel-aluminum alloy layer is formed in a thermal spraying manner, microscopic pores and gaps on the surface of the first ceramic layer are filled and covered in a spraying process, a compact physical barrier is formed after solidification, and the spraying thickness of the nickel-aluminum alloy layer is preferably 60 mu m. Preferably, the thermal expansion coefficient of the nickel-aluminum alloy layer is between the first ceramic layer and the tungsten layer, so as to form a thermal expansion coefficient gradient transition structure. Preferably, the tungsten layer is a conductive layer for electrostatic adsorption and is electrically connected with an external power supply through a direct current port. Preferably, the nickel-aluminum alloy layer can block or passivate a microcrack path expanding from the first ceramic layer to the tungsten layer and the second ceramic layer. Preferably, the first ceramic layer and the second ceramic layer are both insulating ceramic coatings for achieving electrical insulation and structural protection of the tungsten layer. Preferably, after the first ceramic layer is formed on the substrate, a direct current port is installed in a direct current port area corresponding to the first ceramic layer, then a nickel-aluminum alloy layer is formed on the surfaces of the first ceramic layer and the direct current port in a spraying mode, a tungsten layer is formed on the nickel-aluminum alloy layer, finally a second ceramic layer is formed on the tungsten layer, and the direct current port is arranged in the direction from the substrate, penetrates through the first ceramic layer and the nickel-aluminum alloy layer in sequence and is electrically connected with the bottom surface of the tungsten layer. The beneficial effects of the invention are as follows: 1. According to the invention, the nickel-aluminum alloy transition layer is arranged and the coating structure of the direct current port area is optimized, so that a thermal expansion coefficient gradient structure is formed among different materials, thermal stress and internal stress concentration caused by unmatc