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CN-121976167-A - Two-dimensional amorphous carbon growth method

CN121976167ACN 121976167 ACN121976167 ACN 121976167ACN-121976167-A

Abstract

The invention relates to a two-dimensional amorphous carbon growth method which comprises the steps of heating a carbon source and a substrate in a carrier gas atmosphere, and growing on the substrate to obtain two-dimensional amorphous carbon, wherein the carbon source comprises polycyclic aromatic hydrocarbon and derivatives thereof, and the heating temperature of the carbon source is not lower than the cracking temperature of the polycyclic aromatic hydrocarbon. Compared with the prior art, the method has the advantages that the characteristics of the original molecular framework structure are maintained when the precursor molecules are subjected to removal of functional groups at high temperature to form free radicals, so that the two-dimensional amorphous carbon containing a large amount of original molecular frameworks is synthesized, the precise regulation and control of the two-dimensional amorphous carbon structure are realized, and the two-dimensional amorphous carbon synthesis containing hetero atoms is realized by designing the precursor composition structure.

Inventors

  • ZHOU LIN
  • TAO XINWEI

Assignees

  • 上海交通大学
  • 上海交通大学深圳研究院

Dates

Publication Date
20260505
Application Date
20241031

Claims (10)

  1. 1. The two-dimensional amorphous carbon growing method is characterized by comprising the steps of heating a carbon source and a substrate in a carrier gas atmosphere, and growing on the substrate to obtain two-dimensional amorphous carbon; The heating temperature of the carbon source is not lower than the cracking temperature thereof.
  2. 2. The two-dimensional amorphous carbon growth method according to claim 1, wherein the carbon source comprises polycyclic aromatic hydrocarbon and its derivative, the heating temperature is 300-800 ℃, and the heating temperature of the substrate is 500-1000 ℃.
  3. 3. The two-dimensional amorphous carbon growth method according to claim 1, wherein the substrate is selected from a flat-surfaced substrate, preferably at least one selected from fluorophlogopite, sapphire or hydrogen heat-treated copper foil.
  4. 4. The two-dimensional amorphous carbon growth method according to claim 1, wherein the carrier gas is a hydrogen-containing carrier gas.
  5. 5. The two-dimensional amorphous carbon growth method according to claim 1, wherein the hydrogen content in the hydrogen-containing carrier gas is 4.5-15 vol% and the balance is inert gas.
  6. 6. The method for growing two-dimensional amorphous carbon according to claim 1, wherein the method comprises placing a carbon source and a substrate in a carrier gas flowing in an upstream and downstream direction of the carrier gas, respectively, and heating the carbon source and the carrier, respectively, to grow two-dimensional amorphous carbon on the substrate.
  7. 7. The method for growing two-dimensional amorphous carbon according to claim 1, wherein the method comprises co-heating a carbon source and a substrate in a flowing carrier gas to grow two-dimensional amorphous carbon on the substrate.
  8. 8. The two-dimensional amorphous carbon growth method according to claim 1, wherein the carbon source is selected from at least one of 3,4,9, 10-tetracarboxylic dianhydride perylene, naphthalene tetracarboxylic dianhydride, perylene, coronene, melamine or porphin copper.
  9. 9. The two-dimensional amorphous carbon growth method according to claim 8, wherein when the carbon source is 3,4,9, 10-tetracarboxylic acid dianhydride perylene, the heating temperature of the carbon source is 600-800 ℃, and the heating temperature of the substrate is 600-1000 ℃; When the carbon source is naphthalene tetracarboxylic dianhydride, the heating temperature of the carbon source is 500-900 ℃, and the heating temperature of the substrate is 500-900 ℃; when the carbon source is perylene, the heating temperature of the carbon source is 500-900 ℃, and the heating temperature of the substrate is 500-900 ℃; When the carbon source is coronene, the heating temperature of the carbon source is 500-900 ℃, and the heating temperature of the substrate is 500-900 ℃; when the carbon source is melamine, the heating temperature of the carbon source is 300-900 ℃, and the heating temperature of the substrate is 550-900 ℃; When the carbon source is porphin copper, the heating temperature of the carbon source is 600-900 ℃, and the heating temperature of the substrate is 600-900 ℃.
  10. 10. Use of a two-dimensional amorphous carbon growth method according to any one of claims 1 to 9 for the preparation of wafer-level two-dimensional amorphous carbon.

Description

Two-dimensional amorphous carbon growth method Technical Field The invention belongs to the technical field of carbon materials, and relates to a two-dimensional amorphous carbon growth method. Background Two-dimensional carbon materials represented by graphene are a research hotspot of two-dimensional materials due to their excellent properties and unique physicochemical phenomena. The physical properties of two-dimensional carbon materials exhibit a wide variety of properties as their structure changes, including tunable band gaps, semiconductors, or insulators, which have wide application in transistors, energy storage devices, and superconductors. Amorphous carbon has the remarkable characteristics different from crystalline materials, is the most common amorphous substance with wide application, corresponds to graphene, is mainly sp 2 bond single-layer amorphous carbon, and is just a window for uncovering the structure and structure-activity relationship of amorphous materials. The current methods for successfully preparing large-area two-dimensional amorphous carbon are few, and the synthesis method is mainly concentrated on two methods, namely an indirect method (graphene conversion) and a direct method (bottom-up growth). The indirect method can destroy the C-C bond by carrying out ion beam (or electron beam) bombardment on the crystalline graphene to form huge structural defects and disturb the periodicity of atomic arrangement, but generally has the difficulties of limited synthesis size, almost uncontrollable uniformity, incapacity of realizing mass preparation and the like. The direct method has not solved at present and synthesized large-scale two-dimensional amorphous carbon directly on any substrate, and the thickness of the synthesized two-dimensional amorphous carbon is thicker, so that the synthesis of single-layer amorphous carbon is difficult to realize. In summary, the two-dimensional amorphous carbon has different structures and adjustable physical properties, and has wide application prospects, but the existing two-dimensional amorphous carbon synthesis method is extremely few and has the problems of random structure, difficult precise control and the like, so that development of a new two-dimensional amorphous carbon synthesis method is needed. Disclosure of Invention The invention aims to provide a two-dimensional amorphous carbon growth method which is applicable to growth of two-dimensional amorphous carbon with various carbon sources, can realize accurate regulation and control of a two-dimensional amorphous carbon structure, and can realize synthesis of two-dimensional amorphous carbon containing hetero atoms by designing a precursor composition structure. The aim of the invention can be achieved by the following technical scheme: the first aspect of the invention provides a two-dimensional amorphous carbon growing method, comprising the steps of heating a carbon source and a substrate in a carrier gas atmosphere, and growing on the substrate to obtain two-dimensional amorphous carbon; The carbon source comprises polycyclic aromatic hydrocarbon and derivatives thereof, and the heating temperature of the polycyclic aromatic hydrocarbon is not lower than the cracking temperature of the carbon source. Further, the heating temperature of the carbon source is 300-800 ℃, and the heating temperature of the substrate is 500-1000 ℃. Further, the substrate may be a flat base, preferably at least one selected from fluorophlogopite, sapphire, or hydrogen heat treated copper foil. Further, the carrier gas is a hydrogen-containing carrier gas. Further, in the hydrogen-containing carrier gas, the hydrogen content is 4.5-15 vol% and the balance is inert gas. Further, the method comprises the steps of placing a carbon source and a substrate on the upstream and downstream of the carrier gas respectively in the flowing carrier gas, heating the carbon source and the carrier respectively, and growing the two-dimensional amorphous carbon on the substrate. Further, the method comprises placing carbon sources at the upstream and downstream of the substrate in flowing carrier gas, respectively, and heating the carbon sources and the carrier, respectively, to grow two-dimensional amorphous carbon on the substrate. The method is preferably used in batch growth. Further, the method includes co-heating a carbon source with the substrate in a flowing carrier gas to grow two-dimensional amorphous carbon on the substrate. Further, the carbon source is selected from at least one of 3,4,9, 10-tetracarboxylic dianhydride Perylene (PTCDA), naphthalene tetracarboxylic dianhydride, perylene, coronene, melamine or porphin copper. FIG. 18 is a thermogravimetric analysis of the carbon source. Further, when the carbon source is 3,4,9, 10-tetracarboxylic acid dianhydride perylene, the heating temperature of the carbon source is 600-800 ℃, and the heating temperature of the substrate is 600-1000 ℃; When the carbon source