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CN-121976170-A - Preparation method of tin-doped scaly nano gallium oxide film solar blind ultraviolet photoelectric detector

CN121976170ACN 121976170 ACN121976170 ACN 121976170ACN-121976170-A

Abstract

The invention provides a preparation method of a tin-doped flake nano gallium oxide film solar blind ultraviolet photoelectric detector, which comprises the following steps of cleaning and preprocessing a monocrystalline GaN substrate, depositing an Au film on the preprocessed monocrystalline GaN substrate to serve as a catalytic layer, mixing Ga 2 O 3 , diamond and SnO 2 powder according to a certain mass ratio to prepare a precursor, placing the monocrystalline GaN substrate deposited with the Au film and the precursor into a CVD furnace, growing to obtain the tin-doped flake nano gallium oxide film according to preset air flow, pressure intensity, reaction temperature and reaction time, and preparing electrodes on the surface of the tin-doped flake nano gallium oxide film and the surface of the GaN substrate respectively by adopting a radio frequency magnetron sputtering method. The invention improves the conductivity of the film through tin doping, and increases the specific surface area and light absorption by utilizing the scaly nano structure, thereby realizing high-performance deep ultraviolet photoelectric detection and solving the technical problem of higher dark current of devices in the prior art.

Inventors

  • LU WENQIANG
  • HE SIYI
  • FU XIE
  • JIANG CHENGMING

Assignees

  • 中国科学院重庆绿色智能技术研究院

Dates

Publication Date
20260505
Application Date
20260203

Claims (9)

  1. 1. The preparation method of the tin-doped scale-shaped nano gallium oxide film is characterized by comprising the following steps of: cleaning pretreatment is carried out on the monocrystalline GaN substrate; Depositing an Au film as a catalytic layer on the pretreated monocrystalline GaN substrate; Mixing Ga 2 O 3 powder, diamond powder and SnO 2 powder according to a certain mass ratio to prepare a precursor; Placing the monocrystal GaN substrate deposited with the Au film and the precursor into a CVD furnace, setting the air flow of inert gas to be 80-150sccm, introducing the mixture at 550-570 ℃, introducing the O 2 air flow to be 1.0-1.5sccm at 930-940 ℃, maintaining the air pressure in the furnace to be 20kPa, and maintaining the constant temperature at 960-980 ℃ for 10-20 minutes to obtain the tin-doped flaky nanometer gallium oxide film.
  2. 2. The method for preparing the tin-doped flaky nano gallium oxide film according to claim 1, wherein the pretreatment for cleaning the single crystal GaN substrate comprises the steps of sequentially carrying out ultrasonic cleaning for 30 minutes by acetone, 15 minutes by absolute ethyl alcohol and 10 minutes by deionized water, and then drying by high-purity nitrogen flow.
  3. 3. The method for preparing the tin-doped scaly nano gallium oxide film according to claim 1, wherein the depositing of the Au film on the pretreated single crystal GaN substrate is performed as a catalytic layer, and the method comprises the steps of depositing the Au film with the thickness of 3-10nm on the pretreated single crystal GaN substrate by using a mask plate as the catalytic layer under the conditions of high vacuum and room temperature by adopting a radio frequency magnetron sputtering method.
  4. 4. The method for preparing the tin-doped flaky nano gallium oxide film according to claim 1, wherein the mass ratio of Ga 2 O 3 powder, diamond powder and SnO 2 powder is 2:2:1-2:2:0.5 when preparing the precursor.
  5. 5. A tin-doped scale-shaped nano gallium oxide film, which is characterized by being prepared by adopting the preparation method of the tin-doped scale-shaped nano gallium oxide film as claimed in any one of claims 1 to 4.
  6. 6. The use of the tin-doped flake nano gallium oxide film according to claim 5, for the preparation of solar blind ultraviolet photodetectors.
  7. 7. The preparation method of the tin-doped scale-shaped nano gallium oxide film solar blind ultraviolet photoelectric detector is characterized by comprising the following steps of: cleaning pretreatment is carried out on the monocrystalline GaN substrate; Depositing an Au film as a catalytic layer on the pretreated monocrystalline GaN substrate; Mixing Ga 2 O 3 powder, diamond powder and SnO 2 powder according to a certain mass ratio to prepare a precursor; Placing a monocrystal GaN substrate deposited with an Au film and a precursor into a CVD furnace, setting the air flow of inert gas to be 80-150sccm, introducing the mixture at 550-570 ℃, introducing O 2 air flow to be 1.0-1.5sccm at 930-940 ℃, maintaining the air pressure in the furnace to be 20kPa, and maintaining the constant temperature at 960-980 ℃ for 10-20 minutes to obtain a tin-doped flaky nano gallium oxide film; and respectively preparing electrodes on the surface of the tin-doped scaly nano gallium oxide film and the surface of the GaN substrate by adopting a radio frequency magnetron sputtering method.
  8. 8. The method for preparing a tin-doped scaly nano gallium oxide film solar blind ultraviolet photoelectric detector according to claim 7, wherein the electrode is an Au electrode.
  9. 9. The solar blind ultraviolet photoelectric detector of the tin-doped scale-shaped nano gallium oxide film is characterized by being prepared by adopting the preparation method of the solar blind ultraviolet photoelectric detector of the tin-doped scale-shaped nano gallium oxide film as claimed in claim 7 or 8.

Description

Preparation method of tin-doped scaly nano gallium oxide film solar blind ultraviolet photoelectric detector Technical Field The invention relates to the technical field of semiconductor photoelectric devices, in particular to a preparation method of a tin-doped scaly nano gallium oxide film solar blind ultraviolet photoelectric detector. Background The deep ultraviolet photoelectric detector has important application in the fields of environmental monitoring, biochemical analysis, flame detection, ultraviolet communication and the like. Gallium oxide (Ga 2O3) is used as an ultra-wide band-gap semiconductor (4.9 eV), and the intrinsic absorption edge of the gallium oxide is positioned in a deep ultraviolet band, so that the gallium oxide is an ideal material for preparing a deep ultraviolet photoelectric detector. Currently, ga 2O3 -based photodetectors employ heteroepitaxy to grow thin films on sapphire (Al 2O3) substrates. In the prior art, the preparation methods of Ga 2O3 thin films are various, including magnetron sputtering, pulse laser deposition, chemical Vapor Deposition (CVD) and the like. However, the Ga 2O3 film prepared by most methods is polycrystalline or amorphous, and has the problems of more grain boundaries, high defect density, low carrier mobility and the like, so that the dark current of the device is higher, the response speed is slow, and the detection rate is low. Disclosure of Invention Aiming at the defects existing in the prior art, the invention provides a preparation method of a tin-doped flaky nano gallium oxide film solar blind ultraviolet photoelectric detector, which adopts a Chemical Vapor Deposition (CVD) method to grow a tin (Sn) -doped flaky nano gallium oxide film on a GaN substrate, improves the conductivity of the film through tin doping, and increases the specific surface area and light absorption by utilizing a flaky nano structure, thereby finally realizing high-performance deep ultraviolet photoelectric detection so as to solve the technical problem of higher dark current of devices existing in the prior art. The technical scheme adopted by the invention is as follows: in a first aspect, a method for preparing a tin-doped scaly nano gallium oxide film is provided, which comprises the following steps: cleaning pretreatment is carried out on the monocrystalline GaN substrate; Depositing an Au film as a catalytic layer on the pretreated monocrystalline GaN substrate; Mixing Ga 2O3 powder, diamond powder and SnO 2 powder according to a certain mass ratio to prepare a precursor; Placing the monocrystal GaN substrate deposited with the Au film and the precursor into a CVD furnace, setting the air flow of inert gas to be 80-150sccm, introducing the mixture at 550-570 ℃, introducing the O 2 air flow to be 1.0-1.5sccm at 930-940 ℃, maintaining the air pressure in the furnace to be 20kPa, and maintaining the constant temperature at 960-980 ℃ for 10-20 minutes to obtain the tin-doped flaky nanometer gallium oxide film. Further, the cleaning pretreatment of the monocrystalline GaN substrate comprises the steps of sequentially carrying out ultrasonic cleaning by acetone for 30 minutes, ultrasonic cleaning by absolute ethyl alcohol for 15 minutes, ultrasonic cleaning by deionized water for 10 minutes, and drying under high-purity nitrogen flow. Further, the Au film is deposited on the pretreated monocrystalline GaN substrate to serve as a catalytic layer, and the Au film with the thickness of 3-10nm is deposited on the pretreated monocrystalline GaN substrate by a radio frequency magnetron sputtering method under the conditions of high vacuum and room temperature to serve as the catalytic layer. Further, when preparing the precursor, the mass ratio of Ga 2O3 powder, diamond powder and SnO 2 powder is 2:2:1-2:2:0.5. In a second aspect, a tin-doped scale-shaped nano gallium oxide film is provided, and the tin-doped scale-shaped nano gallium oxide film is prepared by the preparation method of any one of the first aspect. In a third aspect, there is provided an application of the tin-doped scale-shaped nano gallium oxide film according to the second aspect, for preparing a solar blind ultraviolet photoelectric detector. In a fourth aspect, a method for preparing a tin-doped scaly nano gallium oxide film solar blind ultraviolet photoelectric detector is provided, comprising the following steps: cleaning pretreatment is carried out on the monocrystalline GaN substrate; Depositing an Au film as a catalytic layer on the pretreated monocrystalline GaN substrate; Mixing Ga 2O3 powder, diamond powder and SnO 2 powder according to a certain mass ratio to prepare a precursor; Placing a monocrystal GaN substrate deposited with an Au film and a precursor into a CVD furnace, setting the air flow of inert gas to be 80-150sccm, introducing the mixture at 550-570 ℃, introducing O 2 air flow to be 1.0-1.5sccm at 930-940 ℃, maintaining the air pressure in the furnace to be 20kPa, and maintaining t