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CN-121976193-A - Neutral copper polishing solution and preparation method and application thereof

CN121976193ACN 121976193 ACN121976193 ACN 121976193ACN-121976193-A

Abstract

The application provides a neutral copper polishing solution, a preparation method and application thereof, wherein the neutral copper polishing solution comprises the following raw materials, by weight, 0.1-1 part of an abrasive, 0.1-3 parts of a complexing agent, 0.005-0.1 part of a surfactant, 0.001-0.5 part of a preservative, 0.1-2 parts of an oxidant, 0.1-3 parts of a corrosion inhibitor and 88-99.5 parts of water, and the pH value of the neutral copper polishing solution is 6.5-7.5. The neutral copper polishing solution provided by the application does not adopt any strong acid or strong alkali, can give consideration to high removal rate and low static corrosion rate, has high surface quality of polished materials and good polishing efficiency, and realizes cooperative optimization in three dimensions of safety, polishing effect and environmental protection during use.

Inventors

  • Hui Hongye
  • XU YANLING
  • ZHU HAIQING

Assignees

  • 宁波平恒电子材料有限公司

Dates

Publication Date
20260505
Application Date
20260129

Claims (10)

  1. 1. The neutral copper polishing solution is characterized by comprising, by weight, 0.1-1 part of an abrasive, 0.1-3 parts of a complexing agent, 0.005-0.1 part of a surfactant, 0.001-0.5 part of a preservative, 0.1-2 parts of an oxidant, 0.1-3 parts of a corrosion inhibitor and 88-99.5 parts of water, wherein the pH of the neutral copper polishing solution is 6.5-7.5.
  2. 2. The neutral copper polishing liquid according to claim 1, wherein the abrasive is one or more selected from the group consisting of silicon oxide, cerium oxide, and aluminum oxide; and/or the complexing agent is selected from amino acid complexing agents; And/or the preservative is selected from one or more of pinocembrane and 1, 2-benzisothiazolin-3-one; And/or the corrosion inhibitor is selected from 1,2, 4-triazole.
  3. 3. The neutral copper polishing liquid according to claim 1, wherein the surfactant comprises nonylphenol polyoxyethylene ether amine sulfate; and/or the oxidizing agent comprises hydrogen peroxide; And/or the abrasive comprises at least large-particle-diameter particles, wherein the large particle diameter is 45-75 nm.
  4. 4. The neutral copper polishing solution according to claim 2, wherein the silicon oxide comprises colloidal silica, and the solid content of the colloidal silica is 20-40 wt%; And/or the complexing agent is selected from one or more of glycine, aspartic acid, lysine and arginine.
  5. 5. The neutral copper polishing solution according to claim 3, wherein the number average molecular weight of the nonylphenol polyoxyethylene ether ammonium sulfate is 800-1000 Da; and/or the abrasive comprises large-particle-size particles and small-particle-size particles, wherein the large particle size is 45-75 nm, and the small particle size is 15-30 nm.
  6. 6. The neutral copper polishing liquid according to claim 5, wherein a mass ratio of the large-size particles to the small-size particles is 1:0.5-2.
  7. 7. A method for preparing the neutral copper polishing solution according to any one of claims 1 to 6, comprising the steps of adding the complexing agent, the surfactant, the corrosion inhibitor, the abrasive and the preservative into water respectively to obtain a solution A, and adding the oxidant into the solution A when in use to obtain the neutral copper polishing solution.
  8. 8. The preparation method according to claim 7, wherein the stirring is carried out during the preparation of the solution A at a stirring speed of 30-50 rpm/min.
  9. 9. Use of the neutral copper polishing liquid according to any one of claims 1 to 6 in copper polishing.
  10. 10. The nonylphenol polyoxyethylene ether amine sulfate is used as a raw material component in chemical mechanical polishing liquid for improving the quality of a polished surface.

Description

Neutral copper polishing solution and preparation method and application thereof Technical Field The invention relates to the technical field of semiconductor processing, in particular to neutral copper polishing solution, and a preparation method and application thereof. Background Chemical mechanical Polishing (CHEMICAL MECHANICAL Polishing) is simply referred to as CMP, which is the only technology capable of realizing global planarization at present and can realize ultra-precise processing of a plurality of materials. The polishing solution is an important technical means for finishing chemical mechanical polishing, and the planarization of the material surface is finally realized by combining the chemical action of various additives in the polishing solution with the mechanical action of abrasive particles. The traditional mechanical processing is easy to cause fragmentation when processing hard and brittle materials, and is easy to generate defects such as corrugation, scratch and the like on materials with low hardness. The chemical mechanical polishing combines the advantages of mechanical action and chemical action, can adjust the components and the technological parameters of the polishing solution according to different materials, and has better adaptability. High precision polishing of copper and its alloys is one of the key technologies in the fields of microelectronics fabrication, medical devices (e.g., copper alloy implants), precision optics, etc. The traditional copper polishing technology mainly relies on acid or alkaline Chemical Mechanical Polishing (CMP), but the acid polishing solution or the alkaline polishing solution has the problems that 1. The biocompatibility is poor, a strong acid (such as HNO 3、H2SO4) or a strong base (such as KOH) system is harmful to biological tissues, the direct contact with human bodies can cause tissue damage, residual toxic substances can influence the operation and the life health safety of users, the traditional copper polishing technology is not suitable for medical equipment or wearable electronic equipment, the application field of the traditional copper polishing technology is limited, 2. The environment pollution is that the acid polishing solution easily generates NO x and other harmful gases, the copper-containing waste liquid treatment cost is high, 3. The process compatibility is low, and the strong acid/strong base can corrode photoresist or influence the reliability of semiconductor devices. In the prior art, CN112111756A discloses a polishing solution, which aims at balancing polishing efficiency and environmental protection by selecting a modified BTA derivative as a corrosion inhibitor, and can be used for the use and polishing of semiconductors and electronic devices. The BTA derivative (benzotriazole) is adopted as a corrosion inhibitor, and compared with the traditional BTA, the BTA has certain environmental protection, but the polishing solution system is still weak acid, does not completely reach the standard of biocompatibility, and can still stimulate tissues after long-term contact. Therefore, how to provide a polishing solution with good biocompatibility and excellent polishing effect, so as to meet the requirements of high safety, high polishing performance and high environmental protection of the polishing solution. Disclosure of Invention In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a neutral copper polishing solution, and a preparation method and application thereof, for solving the problems in the prior art. To achieve the above and other related objects, the present invention is achieved by the following technical means. The neutral copper polishing solution comprises, by weight, 0.1-1 part of an abrasive, 0.1-3 parts of a complexing agent, 0.005-0.1 part of a surfactant, 0.001-0.5 part of a preservative, 0.1-2 parts of an oxidant, 0.1-3 parts of a corrosion inhibitor and 88-99.5 parts of water, wherein the pH of the neutral copper polishing solution is 6.5-7.5. The abrasive can be 0.1-0.5 part, 0.2-0.4 part and 0.1-0.8 part, the complexing agent can be 0.5-2 parts, 0.8-1.5 part and 0.5-2.5 part, the surfactant can be 0.01-0.1 part, 0.03-0.05 part and 0.01-0.08 part, the preservative can be 0.001-0.002 part, 0.001-0.005 part and 0.001-0.05 part, the oxidant can be 0.5-1.5 part, 0.1-1.5 part and 0.8-1.2 part, and the corrosion inhibitor can be 0.1-0.3 part, 0.1-0.5 part and 0.1-1 part. The pH of the neutral copper polishing solution can be 7.0-7.2, 6.8-7.2, 7.1-7.3 and 6.8-7.4. The raw material components of the neutral copper polishing solution do not contain a pH regulator, and do not contain any strong acid or strong alkali to regulate the pH of the polishing solution. The polishing solution can keep the neutrality (pH is 6.5-7.5) of an environment system on the basis of no need of using an acid/alkaline pH regulator by selecting specific raw material compone