CN-121976266-A - Metal nanocluster 2D film and preparation method and application thereof

Abstract

The invention belongs to the technical field of conductive films for electric heating chips, and particularly relates to a metal nanocluster 2D film and a preparation method and application thereof. The method comprises the following steps of S1, dissolving 1-5mg of metal nanoclusters with accurate atomic number in 1-3mL of organic solvent to form nanocluster solution, adding 200-500mg of supporting electrolyte into the solution, S2, placing the nanocluster solution in a three-electrode system with an interdigital microelectrode as a working electrode and a counter electrode, applying constant potential to carry out electrochemical deposition, and forming a metal nanocluster 2D film on the interdigital microelectrode. The film has the advantages of good uniformity, high conductivity, strong stability, adjustable resistance and the like, is suitable for miniature electrothermal chips, electrochemical crystallization and current limiting effects, and provides other applications such as high-intensity electric fields.

Inventors

• WU ZHIKUN
• LIU HAO
• LIAO LINGWEN

Assignees

• 中国科学院合肥物质科学研究院

Dates

Publication Date

20260505

Application Date

20251223

Claims (8)

1. 1. The preparation method of the metal nanocluster 2D film is characterized by comprising the following steps of: S1, dissolving 1-5mg of metal nanoclusters with accurate atomic number in 1-3mL mg of organic solvent to form a nanocluster solution, and adding 200-500mg of supporting electrolyte into the solution; and S2, placing the nanocluster solution into a three-electrode system which takes the interdigital microelectrode as a working electrode and a counter electrode, applying constant potential to perform electrochemical deposition, and forming a metal nanocluster 2D film on the interdigital microelectrode.
2. 2. The method for preparing a 2D film of metal nanoclusters as set forth in claim 1, wherein the metal nanoclusters are one or a combination of two or more metals.
3. 3. The method for preparing a 2D film of metal nanoclusters as set forth in claim 1, wherein the organic solvent is an organic solvent capable of dissolving metal nanoclusters.
4. 4. The method of claim 1, wherein the constant potential applied by the electrochemical deposition is 0.1-4V and the deposition time is 0.1-30 hours in the step S2.
5. 5. The method for preparing a 2D film of metal nanoclusters of claim 1 wherein the electrochemical deposition process is performed at room temperature.
6. 6. A metal nanocluster 2D film prepared by the method for preparing a metal nanocluster 2D film according to any one of claims 1 to 5, wherein the metal nanocluster 2D film is formed by electrochemical deposition of an atomically accurate metal nanocluster on an interdigital microelectrode.
7. 7. The method of claim 6, wherein the film is applied to an electrothermal chip and operates at an applied voltage of 0.1-4.8V.
8. 8. The application of the metal nanocluster 2D film as claimed in claim 6, wherein the film is applied to electric crystallization, current-limiting electronic components, electric heating fields and high-strength electric field elements.

Description

Metal nanocluster 2D film and preparation method and application thereof Technical Field The invention belongs to the technical field of conductive films for electric heating chips, and particularly relates to a metal nanocluster 2D film and a preparation method and application thereof. Background The metal nanocluster with accurate atomic number has the characteristics of ultra-small size, discrete energy level and molecular like, the energy gap of the metal nanocluster can be regulated and controlled through ligand and structural engineering, and the metal nanocluster is an ideal material for constructing next-generation electronic devices. At present, the methods for preparing the two-dimensional film by the metal nanocluster mainly comprise spin coating, dripping coating, langmuir-Blodgett method, thermal induction method and the like, but the methods have the problems of poor film forming uniformity, low conductivity, high energy consumption and the like. The existing electrothermal material is mainly made of metal materials (such as copper wires and nickel wires) or carbon materials (such as carbon nanotubes and graphene). The metal material has good conductivity but is easy to oxidize, and the carbon material has good stability but has lower conductivity and electrothermal efficiency. In addition, the resistance of the existing material is difficult to adjust, and the application range of the existing material is limited. Therefore, there is a need for a metal nanocluster 2D thin film, and a method for preparing the same and applications thereof to solve the above problems. Disclosure of Invention In order to overcome the defects in the prior art, the invention provides a metal nanocluster 2D film, and a preparation method and application thereof. The film has the advantages of good uniformity, high conductivity, strong stability, adjustable resistance and the like, and is suitable for miniature electric heating chips. In order to achieve one of the above purposes, the present invention adopts the following technical scheme: The preparation method of the metal nanocluster 2D film comprises the following steps: S1, dissolving 1-5mg of metal nanoclusters with accurate atomic number in 1-3mL of organic solvent to form a nanocluster solution, and adding 200-500mg of supporting electrolyte into the solution; and S2, placing the nanocluster solution into a three-electrode system which takes the interdigital microelectrode as a working electrode and a counter electrode, applying constant potential to perform electrochemical deposition, and forming a metal nanocluster 2D film on the interdigital microelectrode. Preferably, the metal nanoclusters are noble metals such as Au, ag, pt, and Pd, or a combination of one or more metals. Preferably, the organic solvent is an organic solvent capable of dissolving the metal nanoclusters, and may be acetonitrile in particular. Preferably, the supporting electrolyte is tetrabutylammonium hexafluorophosphate. Preferably, the constant potential applied by the electrochemical deposition in step S2 is 0.1-4V and the deposition time is 0.1-30 hours. . Preferably, the electrochemical deposition process is performed at room temperature, and after the deposition is completed, the substrate on which the thin film is deposited is washed and vacuum-dried at a drying temperature of 60 ℃. In order to achieve the second object, the present invention provides a metal nanocluster 2D thin film formed by electrochemical deposition of atomically accurate metal nanoclusters on interdigitated microelectrodes. In order to achieve the third object, the present invention provides an application of a metal nanocluster 2D film, the film is applied to an electrothermal chip, and the film operates under an applied voltage of 0.1-4.8V. Preferably, the film has an electrothermal temperature of 170.4 ℃ at an applied voltage of 0.8V. In order to achieve the above object, the present invention provides an application of a metal nanocluster 2D thin film, which is applied to the fields of electronic devices such as electric crystallization, current limiting electronic components, electric heating fields, high-strength electric field components, and other applications. The invention has the advantages that: (1) The electrochemical induced film forming method is simple, quick and environment-friendly, and has uniform film forming and excellent conductivity. (2) The interdigital microelectrode structure adopted by the invention is favorable for realizing the miniaturization of the film, and is suitable for local heating of an electric heating chip. (3) The metal nanocluster adopted by the invention has high conductivity and stability, and realizes high-efficiency electrothermal conversion under low voltage. (4) The thin film resistor can be regulated and controlled by cluster types, deposition conditions and the like, has electrochemical crystallization, current limiting effect and the like, and widens the a