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CN-121976292-A - Epitaxial structure of gallium nitride semiconductor chip with low defect density

CN121976292ACN 121976292 ACN121976292 ACN 121976292ACN-121976292-A

Abstract

The invention discloses an epitaxial structure of a low-defect-density gallium nitride semiconductor chip, which relates to the technical field of chip epitaxial equipment and comprises an epitaxial furnace for carrying out an epitaxial process on a single crystal substrate, wherein the epitaxial furnace comprises an outer shell, a driving mechanism is fixedly arranged at the bottom of an inner cavity of the outer shell, a bearing part is connected on an output shaft of the driving mechanism in a transmission way, a hydraulic cylinder group is fixedly arranged at the top of the inner cavity of the outer shell, and a hollow shaft rod is connected in the inner part of the hydraulic cylinder group in a transmission way.

Inventors

  • MA SHENGHENG
  • ZHANG YUN
  • WU YIZHEN
  • PEI YANRONG
  • WANG LIANSHAN

Assignees

  • 中科(深圳)无线半导体有限公司
  • 中国科学院半导体研究所

Dates

Publication Date
20260505
Application Date
20260403

Claims (9)

  1. 1. The utility model provides a low defect density gallium nitride semiconductor chip epitaxial structure, includes the epitaxial furnace that is used for carrying out epitaxial technology to single crystal substrate, the epitaxial furnace includes shell body (1), the bottom fixed mounting of shell body (1) inner chamber has actuating mechanism (2), the transmission is connected with carrier part (3) on the output shaft of actuating mechanism (2), the top fixed mounting of shell body (1) inner chamber has pneumatic cylinder group (4), and is connected with hollow axostylus axostyle (5) at the inside transmission of pneumatic cylinder group (4), its characterized in that: The bearing component (3) comprises an inner sleeve (8) fixedly mounted at the middle part of an inner cavity of the outer shell body (1), a transmission disc (9) fixedly connected with an output shaft of the driving mechanism (2) is movably sleeved at the bottom of the inner cavity of the inner sleeve (8), a bearing disc (10) is fixedly mounted at the top end of the transmission disc (9), a conducting block (11) is arranged at the top of the outer surface of the bearing disc (10), the conducting block (11) is communicated with a supporting block (13) fixedly mounted on the inner wall of the bearing disc (10), heating disc groups (15) which are staggered with the supporting block (13) are fixedly mounted on the inner wall of the bearing disc (10), a plurality of groups of communication holes (14) communicated into the inner cavity of the supporting block are formed in the top end of the supporting block (13), a second guide tube (12) communicated into the inner cavity of the transmission disc is fixedly mounted at the top end of the conducting block (11), meanwhile, a communicating cover plate (6) communicated with the outer surface of the hollow shaft (5) is fixedly mounted at the bottom of the outer surface of the hollow shaft (11), and the first guide tube (7) is correspondingly communicated with the position of the supporting block (11).
  2. 2. The low defect density gallium nitride semiconductor chip epitaxial structure according to claim 1, wherein the groups of communication holes (14) are arranged in a linear array along the radial direction of the carrier plate (10), so that when single crystal substrates of different specifications and sizes are placed, the communication holes (14) at different positions are blocked by the single crystal substrates.
  3. 3. The low defect density gallium nitride semiconductor chip epitaxial structure according to claim 2, wherein the difference in height between the top end of the supporting block (13) and the top end of the carrier plate (10) is equal to the thickness of the single crystal substrate, and the top end of the heating plate group (15) is lower than the top end of the supporting block (13).
  4. 4. A low defect density gallium nitride semiconductor chip epitaxy structure according to claim 3, wherein an inner clamping groove (17) corresponding to the position of the supporting block (13) is formed at the top of the outer surface of the bearing disc (10), a group of sliding modules (18) are respectively connected to two sides of the inner cavity of the inner clamping groove (17) in a sliding manner, the sliding modules (18) are in transmission connection with the inner end face of the inner clamping groove (17) through a telescopic air pressure rod, and a positioning rope (19) is arranged between the two groups of sliding modules (18).
  5. 5. The low defect density gallium nitride semiconductor chip epitaxy structure according to claim 4, wherein the end of the positioning wire (19) is fixedly connected with the sliding module (18) through a reel, and a disc spring is arranged between the reel and the sliding module (18).
  6. 6. The epitaxial structure of low defect density gallium nitride semiconductor chip according to claim 4, wherein the positioning wire (19) is made of high temperature resistant flexible cotton wire and has an outer diameter smaller than the thickness of the monocrystalline substrate.
  7. 7. The low defect density gallium nitride semiconductor chip epitaxy structure according to claim 4, wherein a connecting pipe (20) connected to the inner cavity of the second conduit (12) is fixedly installed at a side end of the second conduit, and the other end of the connecting pipe (20) is connected to the inside of the telescopic pneumatic rod.
  8. 8. The low defect density gallium nitride semiconductor chip epitaxy structure according to claim 1, characterized in that the bottom of the outer surface of the inner sleeve (8) is provided with a reflux groove (16) communicated into the inner cavity thereof, and the reflux groove (16) is communicated with a gas recovery pipeline system.
  9. 9. The low defect density gallium nitride semiconductor chip epitaxial structure according to claim 1, wherein the top end of the supporting block (13) is provided with a rubber pad.

Description

Epitaxial structure of gallium nitride semiconductor chip with low defect density Technical Field The invention relates to integrated circuit manufacturing, in particular to the technical field of chip epitaxy equipment, and especially relates to a low-defect-density gallium nitride semiconductor chip epitaxy structure. Background Epitaxy is a front-end process link in integrated circuit manufacture, and is one of core processes in integrated circuit manufacture, and is mainly characterized in that special gas is introduced into the surface of a monocrystalline substrate and is sequentially deposited to form a film layer with specific lattice orientation, so that a basic structure is provided for the construction of devices such as a transistor and the like, wherein an epitaxial furnace is main equipment for performing an epitaxial process on a semiconductor chip; however, in the use process of the existing epitaxial furnace, the bearing base needs to be continuously rotated to ensure that the single crystal substrate is heated uniformly, so that the single crystal substrate placed in the bearing base is extremely easy to deviate due to centrifugal force and impact of special gas, the epitaxial precision and quality of the single crystal substrate are seriously affected, and even the single crystal substrate is damaged, so that the defect rate of the single crystal substrate on the crystal epitaxial process is higher and the productivity is lower. Therefore, there is a need for an epitaxial furnace structure using a semiconductor chip epitaxy process to solve the above-mentioned drawbacks of the conventional epitaxial furnace in the practical operation process. Disclosure of Invention The application provides a low defect density gallium nitride semiconductor chip epitaxial structure, which has the advantages of effectively positioning a monocrystalline substrate, preventing the monocrystalline substrate from being deviated in the process of carrying out an epitaxial process and ensuring higher epitaxial precision and quality of the monocrystalline substrate, and is used for solving the problems that the monocrystalline substrate is easy to deviate due to centrifugal force and impact of special gas and the epitaxial precision and quality of the monocrystalline substrate are seriously influenced and even the monocrystalline substrate is damaged due to the fact that a bearing base needs to be continuously rotated to ensure that the monocrystalline substrate is heated uniformly in the use process of the conventional epitaxial furnace. In order to achieve the above purpose, the application adopts the following technical scheme: the epitaxial structure of the low defect density gallium nitride semiconductor chip comprises an epitaxial furnace for carrying out an epitaxial process on a monocrystalline substrate, the epitaxial furnace comprises an outer shell, a driving mechanism is fixedly arranged at the bottom of an inner cavity of the outer shell through bolts, a bearing component which is positioned in the middle of the inner cavity of the outer shell and used for placing the monocrystalline substrate is connected to an output shaft of the driving mechanism in a transmission way, the bearing component and the monocrystalline substrate on the bearing component are driven by the driving mechanism to carry out a rotating action, a hydraulic cylinder group is fixedly arranged at the top of the inner cavity of the outer shell, a hollow shaft rod is connected to the inner transmission of the hydraulic cylinder group, the top end of the hollow shaft rod is communicated with a pipeline system for conveying special gas, and then the special gas can be conveyed into the inner cavity of the outer shell through the hollow shaft rod to carry out epitaxial operation on the monocrystalline substrate placed on the bearing component, the bearing part comprises an inner sleeve fixedly arranged in the middle of the inner cavity of the outer shell, a transmission disc fixedly connected with the output shaft of the driving mechanism is movably sleeved at the bottom of the inner sleeve inner cavity, the top end of the transmission disc is fixedly provided with the bearing disc, and then the bearing disc can be driven to rotate under the transmission action of the transmission disc when the driving mechanism is started, three groups of conducting blocks which are arranged in an annular array are arranged at the top of the outer surface of the bearing disc, the conducting blocks are correspondingly communicated with three groups of supporting blocks fixedly arranged on the inner wall of the bearing disc and used for placing monocrystalline substrates, heating disc groups which are sequentially staggered between the three groups of supporting blocks and used for heating the monocrystalline substrates are fixedly arranged on the inner wall of the bearing disc, a plurality of groups of communication holes which are communicated into th