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CN-121976301-A - Fe1.82Ge monocrystal metal nano sheet and CVD preparation method and application thereof, and electric device

CN121976301ACN 121976301 ACN121976301 ACN 121976301ACN-121976301-A

Abstract

The invention belongs to the field of two-dimensional material preparation, and particularly discloses a Fe 1.82 Ge single crystal metal nano sheet, a CVD preparation method, application and an electrical device thereof, wherein the Fe 1.82 Ge single crystal metal nano sheet is an atomic-level thick single crystal nano sheet formed by a compound of a Fe 1.82 Ge phase, and the preparation method comprises the steps of volatilizing FeCl 2 and Ge simple substances and performing CVD deposition under a hydrogen-containing atmosphere to prepare the Fe 1.82 Ge single crystal metal nano sheet, wherein the volatilizing temperature of FeCl 2 and a germanium source is 620-660 ℃, and the CVD deposition temperature is 620-660 ℃. The invention innovatively provides a single crystal metal nano sheet with a brand new Fe 1.82 Ge phase, which is a single crystal compound two-dimensional material formed by changing the valence of Ge in Fe and Ge metal elements, and the material has excellent metallic performance and the like.

Inventors

  • LI JIA
  • WU RUIXIA
  • SHEN DINGYI

Assignees

  • 湖南大学重庆研究院
  • 湖南大学

Dates

Publication Date
20260505
Application Date
20260129

Claims (10)

  1. 1. The Fe 1.82 Ge monocrystal metal nano sheet is characterized in that the Fe 1.82 Ge monocrystal metal nano sheet is an atomic-scale thick monocrystal nano sheet formed by a compound of Fe 1.82 Ge phase.
  2. 2. A CVD method for preparing Fe 1.82 Ge single-crystal metal nano-sheets according to claim 1, wherein the Fe 1.82 Ge single-crystal metal nano-sheets are prepared by volatilizing FeCl 2 and Ge simple substances and CVD depositing under hydrogen-containing atmosphere; the volatilization temperatures of the FeCl 2 and the germanium source are 620-660 ℃ respectively; The temperature of CVD deposition is 620-660 ℃.
  3. 3. The method for preparing the Fe 1.82 Ge single crystal metal nano sheet by CVD according to claim 2, wherein the weight ratio of the Ge simple substance to the FeCl 2 is 1:1-3.
  4. 4. The method for preparing Fe 1.82 Ge single-crystal metal nano-sheet by CVD according to claim 2, wherein the hydrogen-containing atmosphere is a mixture of hydrogen and rare gas.
  5. 5. The method for producing a Fe 1.82 Ge single-crystal metal nano-sheet according to claim 4, wherein the flow rate of the rare gas is 60sccm or more, preferably 80 to 100sccm, in the hydrogen-containing atmosphere; The hydrogen flow is 1-5 sccm.
  6. 6. The method for CVD preparation of Fe 1.82 Ge single crystal metal nanoplatelets according to claim 2, wherein the CVD deposited substrate is a silicon substrate, preferably a SiO 2 /Si substrate.
  7. 7. The method for preparing Fe 1.82 Ge single crystal metal nano sheet by CVD according to claim 2, wherein the chemical vapor deposition time is 5-15 min.
  8. 8. Use of the Fe 1.82 Ge single-crystal metal nanoplatelets according to claim 1 or the Fe 1.82 Ge single-crystal metal nanoplatelets prepared by the CVD preparation method according to any one of claims 2 to 7 for the preparation of electrical devices.
  9. 9. The use according to claim 8, for the preparation of field effect transistors; The preparation steps of the preferred field effect transistor are as follows: Marking a sample on the surface of a Fe 1.82 Ge monocrystal metal nano sheet by using electron beam exposure, and then depositing metal on the surface of the sample to obtain a field effect transistor; preferably, depositing metal on the surface of the Fe 1.82 Ge nano-sheet by a vacuum coating machine; Preferably, the metal is 10 nm In/70 nm Au.
  10. 10. An electrical device is characterized by comprising Fe 1.82 Ge single-crystal metal nano-sheets and/or being prepared by the Fe 1.82 Ge single-crystal metal nano-sheets; The Fe 1.82 Ge single-crystal metal nano sheet is the Fe 1.82 Ge single-crystal metal nano sheet of claim 1 or the Fe 1.82 Ge single-crystal metal nano sheet prepared by any one of the CVD preparation methods of claims 2-7.

Description

Fe 1.82 Ge monocrystal metal nano sheet, CVD preparation method and application thereof, and electric device Technical Field The invention belongs to the field of nano materials, and particularly relates to a preparation method of a Fe 1.82 Ge monocrystal metal nano sheet and an application of the Fe 1.82 Ge monocrystal metal nano sheet in an electrical device. Technical Field Two-dimensional materials with atomic thickness are emerging as a platform for studying new substances and potential applications in new generation of atomically thin devices because of their rich physical and chemical properties such as semiconducting, magnetic, charge Density Wave (CDW), superconductive, electrically conductive, electrocatalytic activity, etc. 1-2. For example, molybdenum disulfide (MoS 2) is commonly used as a semiconductor two-dimensional layered material in the fabrication of Field Effect Transistors (FETs). The investigation of the thickness dependent CDW phase transition of TaS 2 and VSe 2 may be an exciting platform for exploring new multi-body states. Metallic two-dimensional materials (VSe 2、VTe2 and NbTe 2 ) with high conductivity can be used as contact electrodes for two-dimensional semiconductors to eliminate the locking effect of fermi levels, and their excellent transparency and flexibility make them highly compatible with two-dimensional semiconductor-based transparent and flexible electronic devices. The family of two-dimensional materials with abundant and excellent properties is very large, and it is predicted that there are about 5619 two-dimensional materials, most of which remain undeveloped. Thus, continuing to explore new two-dimensional materials and to study their properties remains a very important topic. Materials composed of transition metals (TM, representing iron, cobalt, and nickel) and germanium (Ge) are attractive in semiconductor applications because they exhibit a variety of electrical and magnetic properties 3. For example, its electrical properties range from a few kelvin to near room temperature, which may indicate its suitability for application 4-6 as a stokes material in next generation magnetic storage devices. The transition metal germanium (TMGe) is typically obtained synthetically under high pressure and high temperature conditions, but is unsuitable for large scale production TMGe due to the limited sample volume of the high pressure apparatus. Thus, there is a need for a simple method for large-scale synthesis of germanium compound families. Chemical Vapor Deposition (CVD) methods have been widely used to synthesize a variety of ultra-thin two-dimensional materials with complex structures, which are favored because of their strong controllability, flexible scalability, high yield, and low cost. However, the production of grown TMGe nanoplatelets by CVD methods has not been reported, especially Fe 1.82 Ge single crystal nanoplatelets. Therefore, a repeatable method of developing an ultrathin Fe 1.82 Ge nano-sheet with an atomic tip interface and clarifying the electrical properties thereof are of great significance for practical application of Fe 1.82 Ge in next-generation electronic and spintronic devices. Reference to the literature 1. Novoselov, K.; Mishchenko, o. A.; Carvalho, o. A.; Castro Neto, A.Science 2016,353, (6298), aac9439. 2. Duan, X.; Wang, C.; Pan, A.; Yu, R.; Duan, X.Chemical Society Reviews 2015,44, (24), 8859-8876. 3. Drijver, J.; Sinnema, S.; Van der Woude, F.Journal of Physics F: Metal Physics 1976,6, (11), 2165. 4. Wilhelm, H.; Baenitz, M.; Schmidt, M.; Naylor, C.; Lortz, R.; Rößler, U.; Leonov, A.; Bogdanov, A.Journal of Physics: Condensed Matter 2012,24, (29), 294204. 5. Yu, X.; Kanazawa, N.; Onose, Y.; Kimoto, K.; Zhang, W.; Ishiwata, S.; Matsui, Y.; Tokura, Y.Nature materials 2011,10, (2), 106-109. 6.Gallagher, J.; Meng, K.; Brangham, J.; Wang, H.; Esser, B.; McComb, D.; Yang, F.Physical review letters 2017,118, (2), 027201. Disclosure of Invention To fill the gap in the prior art, the first aim of the invention is to provide a Fe 1.82 Ge monocrystal metal nano sheet (also called Fe 1.82 Ge monocrystal, fe 1.82 Ge nano sheet or Fe 1.82 Ge two-dimensional material) which aims to provide a material with a brand new physical and chemical structure and a thin atomic scale. The second object of the present invention is to provide a CVD production method of Fe 1.82 Ge single-crystal metal nano-sheets, aiming at synthesizing an atomically thin Fe 1.82 Ge single-crystal metal nano-sheet having excellent crystallinity and phase purity based on the CVD method. The third object of the invention is to provide the application of the Fe 1.82 Ge monocrystal metal nano-sheet in preparing an electrical device. A fourth object of the present invention is to provide an electrical device comprising the atomically thin Fe 1.82 Ge single-crystal metal nanoplatelets. An Fe 1.82 Ge monocrystal metal nano sheet is an atomic-scale thick monocrystal nano sheet formed by a