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CN-121977220-A - Semiconductor manufacturing process exhaust gas purification device

CN121977220ACN 121977220 ACN121977220 ACN 121977220ACN-121977220-A

Abstract

The invention relates to the technical field of waste gas purification equipment, in particular to a semiconductor manufacturing process waste gas purification device, which comprises a purification spray tower, wherein the air inlet end of the purification spray tower is connected with a gas homogenizing box, the top of the gas homogenizing box is provided with a first air inlet pipe, the top of the inner side of the gas homogenizing box is provided with a flow guiding inner cylinder, the inner side end of the first air inlet pipe extends to the inside of the flow guiding inner cylinder, the bottom of the flow guiding inner cylinder of the gas homogenizing box is provided with a flow guiding pipe, a roundabout air passing path is formed between the first air inlet pipe and the flow guiding pipe, a plurality of second air inlet pipes are arranged on the radial periphery of the first air inlet pipe in the roundabout air passing path, and a plurality of spoilers distributed longitudinally at intervals are arranged on the surface of the second air inlet pipes in the inner area of the flow guiding inner cylinder. The invention is beneficial to solving the problems that the air inlet end of the existing tail gas spray towers is not provided with a suitable air homogenizing and cooling structure, so that the tower body structure is easily damaged and spray water is quickly vaporized when high-temperature tail gas discharged by a burner directly enters the purifying tower in a low-temperature environment, and the pollutant absorption efficiency is reduced.

Inventors

  • BAI XIAOXIN
  • Cai Xiangmian
  • CHEN RUIYONG
  • CHEN ZHIDA

Assignees

  • 厦门钧摩芯半导体有限公司

Dates

Publication Date
20260505
Application Date
20260402

Claims (7)

  1. 1. The utility model provides a semiconductor manufacturing process exhaust purification device, including purifying spray column (100), a serial communication port, the inlet end of this purifying spray column (100) is connected with even gas tank (200), even gas tank (200) top is equipped with first intake pipe (300), the inlet end of first intake pipe (300) communicates with the exhaust end of combustor, even gas tank (200) inboard top is provided with water conservancy diversion inner tube (500), water conservancy diversion inner tube (500) bottom is the sealed end face, leave a plurality of intercommunication clearances between water conservancy diversion inner tube (500) top and the interior roof of even gas tank (200), first intake pipe (300) inboard end extends to the inside of water conservancy diversion inner tube (500), even gas tank (200) are located water conservancy diversion inner tube (500) bottom and are equipped with honeycomb duct (700), the output of honeycomb duct (700) communicates with the input of purifying spray column (100), constitute circuitous air route between first intake pipe (300) to honeycomb duct (700), this circuitous air route is located first intake pipe (300) radial periphery and is equipped with a plurality of second intake pipes (400), second intake pipe (400) top extends to air supply device (200) outside water conservancy diversion inner tube (200) outside intercommunication, be located the inside of a plurality of disc 600 of air distribution cover (600) are located in the inside of a plurality of vertical disc of air distribution (600) at the interval of the inside of area of turbulent flow, and the profile of the spoiler (600) gradually increases along the forward and backward direction of the air leakage.
  2. 2. The exhaust gas purifying apparatus for semiconductor manufacturing process according to claim 1, wherein the plurality of second air inlet pipes (400) are uniformly distributed at the radial periphery of the first air inlet pipe (300).
  3. 3. The semiconductor process exhaust gas purifying device according to claim 2, wherein a plurality of evenly distributed partition plates (510) are arranged on the inner wall of the guide inner cylinder (500), the top of each partition plate (510) extends to the top end of the guide inner cylinder (500) and is fixedly connected with the inner top wall of the gas homogenizing box (200), and the second air inlet pipe (400) is positioned in a gap between adjacent partition plates (510).
  4. 4. A semiconductor process exhaust gas purifying apparatus according to claim 3, wherein the lateral inner end of the partition plate (510) is spaced apart from the outer side wall of the first intake pipe (300).
  5. 5. The exhaust gas purifying apparatus for semiconductor manufacturing process according to claim 1, wherein the second air inlet pipe (400) is provided with an air vent (430) on a sidewall of the bottom of the spoiler (600), and the air vent (430) radially penetrates the second air inlet pipe (400).
  6. 6. The exhaust gas purifying apparatus for semiconductor manufacturing process according to claim 1, wherein a position adjusting structure is provided between the spoiler (600) and the second air intake pipe (400), and the spoiler (600) is capable of being axially displaced and locked along the second air intake pipe (400).
  7. 7. The exhaust gas purifying apparatus for semiconductor manufacturing process according to claim 1, wherein the top of the flow guiding pipe (700) is a cone-shaped funnel structure, and a uniform air cavity gradually gathering along the air flowing direction is formed inside the cone-shaped funnel structure.

Description

Semiconductor manufacturing process exhaust gas purification device Technical Field The invention relates to the technical field of waste gas purifying equipment, in particular to a waste gas purifying device for a semiconductor manufacturing process. Background In the production process of the semiconductor industry, a large amount of chemicals and special gases are used, and a large amount of process waste gas of toxic and harmful gases is continuously generated in the production link. The conventional treatment method of semiconductor process waste gas is to inject the process waste gas into a waste gas burner, firstly receive high-temperature flame combustion in the burner to form high-temperature waste gas, force harmful substances in the high-temperature waste gas to be catalyzed at high temperature and decompose into harmless substances, then introduce a washing tower to dissolve harmful substances soluble in water in the high-temperature waste gas by using washing water, so that the high-temperature waste gas is converted into harmless gas, and simultaneously cool the high-temperature waste gas to facilitate the discharge into the external atmosphere without causing environmental pollution. Therefore, the scrubber is particularly important in the entire exhaust gas purification process. The patent of application number CN202423178154.8 discloses a plasma exhaust treatment device, including the main part of tower body structure, the inside inner chamber that is equipped with of main part, be equipped with vertical water supply pipe in the inner chamber, be equipped with a plurality of vertical interval distribution's water delivery frame on the water supply pipe, each water delivery frame includes drain pipe, communicating pipe and water conservancy diversion platform, the drain pipe is the annular body of a plurality of apopores of bottom equipartition, the water conservancy diversion platform is for locating the annular plate body of apopore below, communicating pipe inside and outside both ends respectively with water supply pipe and drain pipe intercommunication, after water in the water supply pipe can flow through communicating pipe and drain pipe, from top to bottom flow into water conservancy diversion platform top terminal surface through the apopore to form annular water curtain after the guide of water conservancy diversion platform top terminal surface. This patent is favorable to solving in some current purification spray towers because of only adopting atomizer to spray the processing, still exists the space that supplies harmful substance to escape between the tiny drop of water in the atomizing area, influences the problem of purifying effect easily. However, in this patent technical scheme, connect the exhaust end of combustor between the intake pipe of tower body, and this intake pipe is direct to tower body cavity bottom through tower body lateral wall intercommunication, this in-process does not possess suitable even gas structure, if directly connect the combustor, combustor exhaust high temperature tail gas directly gets into tower body bottom, because inside continuous spraying system that possesses, consequently, high temperature tail gas's direct entering can produce violent heat exchange in tower bottom region, the structural material that the purifying column is close to the intake end region probably warp because of the thermal stress is uneven, fracture or corrode, in addition, high temperature tail gas can evaporate spray water rapidly, spray water is not fully contacted with the tail gas and is gasified, reduce pollutant (such as particulate matter, acid gas's) absorption efficiency. Disclosure of Invention The invention provides a semiconductor manufacturing process waste gas purification device, which is favorable for solving the problems that the high-temperature tail gas discharged by a burner is easy to cause the damage of a tower body structure and the rapid vaporization of spray water to reduce the absorption efficiency of pollutants when directly entering the purification tower in a low-temperature environment because the air inlet end of the existing tail gas spray tower is not provided with a suitable uniform air cooling structure. The invention is realized in the following way: The utility model provides a semiconductor manufacturing process exhaust purification device, including purifying the spray column, this air inlet that purifies the spray column is connected with the even gas tank, even gas tank top is equipped with first intake pipe, the air inlet of first intake pipe communicates with the exhaust end of combustor, even gas tank inboard top is provided with the water conservancy diversion inner tube, water conservancy diversion inner tube bottom is the closed end face, leave a plurality of intercommunication clearances between water conservancy diversion inner tube top and the even gas tank inner roof, first intake pipe inboard end extends to the insi