CN-121978047-A - Spectrometer, spectrum reconstruction method and device and electronic equipment

CN121978047ACN 121978047 ACN121978047 ACN 121978047ACN-121978047-A

Abstract

The application provides a spectrometer, a spectrum reconstruction method, a spectrum reconstruction device and electronic equipment, and relates to the field of spectrum analysis. The spectrometer comprises a chip and a peripheral circuit, wherein the chip comprises a photoelectric response layer, a grid electrode layer and an electrode leading-out layer, a target semiconductor is arranged in the photoelectric response layer, the photoelectric response layer is used for converting an incident spectrum into a photoelectric current signal, the grid electrode layer is used for changing the photoelectric response characteristic of the target semiconductor, the grid electrode layer covers the upper surface and the lower surface of the photoelectric response layer, the electrode leading-out layer is used for outputting the photoelectric current signal to an external device, the external device is used for reconstructing the incident spectrum according to the photoelectric response characteristic of the photoelectric current signal and the photoelectric response characteristic of the target semiconductor, and the peripheral circuit is used for maintaining the chip to work. The application adopts the semiconductor with adjustable photoelectric response characteristic as the core of the photoelectric response layer, so that the spectrometer has the spectrum analysis capability from infrared to terahertz wave band, does not need to rely on a huge optical component and a precise mechanical displacement component, and can effectively solve the problems in the prior art.

Inventors

YIN JIANBO
LI XUANQIU
ZHENG CHUNYANG
LIU ZHONGFAN

Assignees

北京大学

Dates

Publication Date: 20260505
Application Date: 20251209

Claims (10)

1. The spectrometer is characterized by comprising a chip and a peripheral circuit, wherein the chip comprises a photoelectric response layer, a grid electrode layer and an electrode extraction layer, and a target semiconductor is arranged in the photoelectric response layer; The photoelectric response layer is used for converting an incident spectrum into a photocurrent signal; The grid electrode layer is used for changing the photoelectric response characteristic of the target semiconductor by regulating and controlling the energy band structure of the photoelectric response layer, the grid electrode layer covers the upper surface and the lower surface of the photoelectric response layer, the grid electrode layer generates an electrostatic field through voltage applied to the grid electrode layer, and the electrostatic field is used for breaking the symmetry inside the target semiconductor so as to change the size of the energy band gap of the target semiconductor and further change the photoelectric response characteristic of the target semiconductor; the electrode lead-out layer is used for outputting the photocurrent signal to external equipment, and the external equipment is used for reconstructing the incident spectrum according to the photocurrent signal and the photoelectric response characteristic of the target semiconductor; the peripheral circuit is used for maintaining the chip to work.
2. The spectrometer of claim 1, wherein the photo-responsive layer further comprises a medium disposed therein, the medium for encapsulating the target semiconductor.
3. The spectrometer of claim 2, wherein the medium is boron nitride.
4. The spectrometer of claim 1, wherein the spectrometer comprises a spectrometer housing, The electrode leading-out layers are respectively arranged at the left side and the right side of the photoelectric response layer.
5. The spectrometer of any of claims 1-4, wherein the target semiconductor is bilayer graphene.
6. A method of spectral reconstruction based on a spectrometer as claimed in any one of claims 1-5, comprising: Acquiring a photocurrent signal generated by a spectrometer under the irradiation of a target spectrum; And reconstructing the target spectrum according to the photocurrent signal and the photoelectric response characteristic of the target semiconductor in the photoelectric response layer of the spectrometer.
7. The method of spectral reconstruction according to claim 6, wherein the photoelectric response characteristic of the target semiconductor is determined by: Acquiring response intensities of the target semiconductor to incident light with different wavelengths under a plurality of different band gaps, and obtaining a plurality of curves of response intensities changing along with the wavelength; And determining the photoelectric response characteristic of the target semiconductor according to a plurality of curves.
8. The method of spectral reconstruction according to claim 6, wherein prior to the reconstructing the target spectrum, the method further comprises: Acquiring a background photocurrent signal generated by the spectrometer under background spectrum irradiation; the reconstructing, according to the photocurrent signal and the photoelectric response characteristic of the target semiconductor in the photoelectric response layer of the spectrometer, to obtain the target spectrum includes: Reconstructing to obtain an initial target spectrum according to the photoelectric response characteristic and the photocurrent signal; Reconstructing to obtain a background spectrum according to the photoelectric response characteristic and the background photocurrent signal; and obtaining the target spectrum according to the initial target spectrum and the background spectrum.
9. A spectral reconstruction apparatus, comprising: The acquisition module is used for acquiring a photocurrent signal generated by the spectrometer under the irradiation of a target spectrum; and the reconstruction module is used for reconstructing the target spectrum according to the photocurrent signal and the photoelectric response characteristic of the target semiconductor in the photoelectric response layer of the spectrometer.
10. An electronic device comprising a memory, a processor and a computer program stored on the memory and running on the processor, characterized in that the processor implements the spectral reconstruction method according to any one of claims 6 to 8 when executing the computer program.

Description

Spectrometer, spectrum reconstruction method and device and electronic equipment Technical Field The present application relates to the field of spectrum analysis, and in particular, to a spectrometer, a spectrum reconstruction method, a spectrum reconstruction device, and an electronic device. Background The infrared to terahertz wave band covers the key spectrum area from molecular vibration to weak interaction between molecules, and forms a continuous information channel for analyzing the structure and the micro-dynamics process of the substance. The wave band contains abundant molecular characteristic absorption and low-frequency resonance modes, is not only important for material component analysis, biological molecular recognition and lattice dynamics research, but also has unique advantages in a plurality of application scenes such as biomedical, space remote sensing imaging, industrial production nondestructive detection and the like, and becomes an important spectrum window for connecting basic science and application technology. The dominant implementations of current spectrometers include dispersive (e.g. grating spectrometers), filtering (e.g. narrowband filtering spectrometers), interferometric (e.g. fourier transform infrared spectrometers) etc. Compared with the abundant types of visible light band spectrometers, the infrared to terahertz band spectrometers mainly adopt interference type, namely rely on a high-precision mobile platform to move, acquire interference fringes evolving along with time, and acquire a spectrum through Fourier transform. The traditional infrared to terahertz wave band spectrometer generally comprises a huge optical component and a precise mechanical displacement component, and cannot meet the requirements of biomedical detection, environmental monitoring, spectral imaging and other fields on low cost, portability and the like of the spectrometer. Disclosure of Invention The application provides a spectrometer, a spectrum reconstruction method, a spectrum reconstruction device and electronic equipment, which are used for solving the problems that the spectrometer with infrared to terahertz wave band in the prior art cannot meet the requirements of low cost, portability and the like of the spectrometer in the fields of biomedical detection, environmental monitoring, spectrum imaging and the like due to the fact that the spectrometer comprises a huge optical component and a precise mechanical displacement component. The application provides a spectrometer, which comprises a chip and a peripheral circuit, wherein the chip comprises a photoelectric response layer, a grid electrode layer and an electrode leading-out layer, and a target semiconductor is arranged in the photoelectric response layer; The photoelectric response layer is used for converting an incident spectrum into a photocurrent signal; The grid electrode layer is used for changing the photoelectric response characteristic of the target semiconductor by regulating and controlling the energy band structure of the photoelectric response layer, the grid electrode layer covers the upper surface and the lower surface of the photoelectric response layer, the grid electrode layer generates an electrostatic field through voltage applied to the grid electrode layer, and the electrostatic field is used for breaking the symmetry inside the target semiconductor so as to change the size of the energy band gap of the target semiconductor and further change the photoelectric response characteristic of the target semiconductor; the electrode lead-out layer is used for outputting the photocurrent signal to external equipment, and the external equipment is used for reconstructing the incident spectrum according to the photocurrent signal and the photoelectric response characteristic of the target semiconductor; the peripheral circuit is used for maintaining the chip to work. According to the spectrometer provided by the application, the photoelectric response layer is also provided with a medium, and the medium is used for wrapping the target semiconductor. According to the spectrometer provided by the application, the medium is boron nitride. According to the spectrometer provided by the application, the electrode leading-out layers are respectively arranged at the left side and the right side of the photoelectric response layer. According to the spectrometer provided by the application, the target semiconductor is double-layer graphene. The application also provides a spectrum reconstruction method based on the spectrometer, which comprises the following steps: Acquiring a photocurrent signal generated by a spectrometer under the irradiation of a target spectrum; And reconstructing the target spectrum according to the photocurrent signal and the photoelectric response characteristic of the target semiconductor in the photoelectric response layer of the spectrometer. The application also provides an electronic device compris