CN-121978328-A - GaN chip-based water alga detection device and detection method for water alga

CN121978328ACN 121978328 ACN121978328 ACN 121978328ACN-121978328-A

Abstract

The invention discloses a water body algae detection device based on a GaN chip and a detection method thereof for water body algae, wherein the device is integrated by a microcystin sensor, a chlorophyll sensor and an ammonium ion sensor, shares a substrate layer and a cover plate, each unit sequentially comprises a gallium nitride layer, an aluminum gallium nitride barrier layer and a gallium nitride cap layer from bottom to top, a source electrode, a drain electrode and a grid electrode area are arranged on the gallium nitride cap layer in parallel, a sensing film with the combination function of microcystin and chlorophyll a and an organic molecular polymer serving as an ammonium ion sensing film are respectively deposited on the surface of the grid electrode area of each unit, the aluminum gallium nitride barrier layer and the gallium nitride layer in the sensor form a heterojunction, two-dimensional electron gas is formed in a channel and is sensitive to potential change of the surface of the grid electrode, and compared with the traditional water body algae detection means, the detection method is more portable, the detection is rapid and the result is accurate.

Inventors

WANG XIAO
Jiang Fengqiu
LIU TAO
Miao Jingrun
CHEN JIAKANG
CHEN HAOYU
AO JINPING
LI YANG
LIU ZHANGCHENG
CHEN ZHIWEI
BAI LIHUA

Assignees

江南大学

Dates

Publication Date: 20260505
Application Date: 20251208

Claims (10)

1. A water algae detection device based on GaN chips is characterized in that the device is formed by integrating a microcystin sensor unit (100), a chlorophyll sensor unit (200) and an ammonium ion sensor unit (300) through a chip, wherein each unit shares a substrate layer (1) and a cover plate (2), a microfluidic channel (3) is communicated between grid detection areas of each sensing unit, The microcystin sensor unit (100) sequentially comprises a first gallium nitride layer (101), a first aluminum gallium nitride barrier layer (102) and a first gallium nitride cap layer (103), wherein a first sensor source electrode (104), a first sensor drain electrode (105) and a first grid electrode region (106) are arranged on the first gallium nitride cap layer (103) in parallel, and a sensing film with a microcystin binding function is deposited on the surface of the first grid electrode region (106); The chlorophyll sensor unit (200) sequentially comprises a second gallium nitride layer (201), a second aluminum gallium nitride barrier layer (202) and a second gallium nitride cap layer (203), wherein a second sensor source electrode (204), a second sensor drain electrode (205) and a second grid electrode region (206) are arranged on the second gallium nitride cap layer (203) in parallel, and a sensing film with a chlorophyll a combining function is deposited on the surface of the second grid electrode region (206); The structure of the ammonium ion sensor unit (300) sequentially comprises a third gallium nitride layer (301), a third aluminum gallium nitride barrier layer (302) and a third gallium nitride cap layer (303), wherein a second sensor source electrode (304), a third sensor drain electrode (305) and a third gate electrode region (306) are arranged on the third gallium nitride cap layer (303) in parallel, and an organic molecular polymer serving as an ammonium ion sensing film is deposited on the surface of the third gate electrode region (306).
2. The GaN chip-based water algae detection device of claim 1, wherein the substrate layer (1) has a thickness of 20000-30000 nm, and the material comprises one of silicon, silicon carbide and sapphire; the thicknesses of the first gallium nitride layer (101), the second gallium nitride layer (201) and the third gallium nitride layer (301) are the same and are 100-1000 nm; The thicknesses of the first aluminum gallium nitride barrier layer (102), the second aluminum gallium nitride barrier layer (202) and the third aluminum gallium nitride barrier layer (302) are the same and are all 10-100 nm; The thicknesses of the first gallium nitride cap layer (103), the second gallium nitride cap layer (203) and the third gallium nitride cap layer (303) are the same and are all 1-50 nm.
3. The GaN chip-based water algae detection apparatus of claim 1, wherein the first sensor source (104), the second sensor source (204) and the third sensor source (304) are made of Ti/Al/Ni/Au laminated structures, and the thicknesses of the layers are 20nm, 100nm, 70nm and 70nm respectively.
4. The GaN chip-based water algae detection device of claim 1, wherein the thickness of the sensing film with the microcystin binding function is 100-400 nm, the thickness of the sensing film with the chlorophyll a binding function is 100-400 nm, and the thickness of the ammonium ion sensing film is 20-200 nm.
5. The GaN chip-based water algae detection apparatus of claim 4, wherein the sensing membrane with the microcystin binding function is obtained by mixing microcystin antibodies with gold nanoparticles.
6. The GaN chip-based water algae detection apparatus of claim 4, wherein the specific receptor of the sensing membrane with chlorophyll a binding function is Lhcb < 1 >, and the sensing membrane carrier is polyvinyl chloride.
7. The GaN chip-based water algae detection apparatus of claim 4, wherein the ammonium ion sensing membrane is made of polyvinyl chloride as a sensing membrane carrier, dioctyl phthalate as a plasticizer, valinomycin as an ammonium ion sensitive substance, and tetrahydrofuran as a solvent.
8. The GaN chip-based water algae detection apparatus for a method for detecting water algae according to any one of claims 1 to 7, wherein the method comprises, Setting the source voltage and the drain voltage of the microcystin sensor, the chlorophyll a sensor and the ammonium ion sensor according to parameters of the microcystin sensor, the chlorophyll a sensor and the ammonium ion sensor respectively, wherein the source voltage is 1V, and the drain voltage is 0V; Preparing standard buffers with different microcystin concentrations, standard buffers with different chlorophyll a concentrations and standard buffers with different ammonium ion concentrations, respectively introducing the standard buffers into microfluidic channels of a detection device, and measuring output current in a stable state to obtain a microcystin standard curve, a chlorophyll a standard curve and an ammonium ion standard curve of the device; And (3) introducing the solution to be detected which is subjected to ultrasonic crushing into a microfluidic channel of a detection device, respectively comparing the values of the three output currents with a microcystin standard curve, a chlorophyll a standard curve and an ammonium ion standard curve after the three output currents are stable, and judging the microcystin concentration, the chlorophyll a concentration and the ammonium ion concentration in the solution to be detected according to the output currents of the solution to be detected and the standard curve so as to determine whether the source water body of the solution to be detected has the risk of bursting water bloom.
9. The method for detecting algae in water body based on GaN chip of claim 8, wherein the standard buffer solution of microcystin is PBS solution and normal saline water mixture, the standard buffer solution of chlorophyll a is PBS solution and normal saline water mixture, and the standard buffer solution of ammonium ion is PBS solution and normal saline water mixture.
10. The method for detecting algae in water body by using the GaN chip-based water body algae detection apparatus according to claim 8, wherein the solution to be detected is a water sample of water source, a PBS solution and a physiological saline mixture, and the ratio of the components is 1:1:1.

Description

GaN chip-based water alga detection device and detection method for water alga Technical Field The invention belongs to the technical field of water body detection devices, and particularly relates to a GaN chip-based water body algae detection device and a detection method for water body algae. Background Blue algae are an ancient large single-cell prokaryote, are widely distributed throughout the world, and are mainly concentrated in fresh water, accounting for about three-fourths of the total. Blue algae contains chlorophyll but does not contain chloroplast, and can perform photosynthesis to release oxygen, wherein the species containing nitrogen fixation enzymes such as anabaena have the capability of directly performing biological nitrogen fixation. Blue algae can be greatly propagated in eutrophic fresh water body polluted by elements such as nitrogen, phosphorus and the like, and a layer of blue-green floating foam with fishy smell is formed on the water surface, which is called water bloom, and large-scale blue algae burst is called green tide. Blue algae burst can cause water quality deterioration, and the green algae layer on the water surface can isolate oxygen in the air from dissolving into the water body while exhausting oxygen in the water body, so that fish death is caused. In addition, the microcystis, the Arthropoda, the anabaena and other species in the blue algae can produce various toxins, and have great harm to the health of animals and human beings in the water body. At present, the water bloom occurs due to the eutrophication of the water body of the freshwater lake, and blue algae burst occurs in areas with poor water source mobility such as fish pond culture, district artificial lake and the like. The existing water body detection mainly utilizes a remote sensing technology to obtain spectral characteristics such as chlorophyll concentration, suspended particulate matter, water body transparency and the like by measuring and analyzing the radiation value of the water body in a certain wave band. However, satellite remote sensing is not suitable for accurate water body detection because the detection cost of a small water area is too high, the detection result is greatly influenced by the environment, and the construction cost of a satellite remote sensing monitoring system is high. Therefore, a portable device capable of accurately detecting the blue algae in the water body is needed. Disclosure of Invention This section is intended to outline some aspects of embodiments of the application and to briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section as well as in the description of the application and in the title of the application, which may not be used to limit the scope of the application. The present invention has been made in view of the above and/or problems occurring in the prior art. Therefore, the invention aims to overcome the defects in the prior art and provide a water body algae detection device based on a GaN chip. In order to solve the technical problems, the invention provides the following technical scheme that the device is formed by integrating a microcystin sensor unit 100, a chlorophyll sensor unit 200 and an ammonium ion sensor unit 300 through a chip, wherein each unit shares a substrate layer 1 and a cover plate 2, a microfluidic channel (3) is communicated between grid detection areas of each sensing unit, The microcystin sensor unit 100 sequentially comprises a first gallium nitride layer 101, a first aluminum gallium nitride barrier layer 102 and a first gallium nitride cap layer 103 from bottom to top, wherein a first sensor source 104, a first sensor drain 105 and a first grid region 106 are arranged on the first gallium nitride cap layer 103 in parallel, and a sensing film with a microcystin binding function is deposited on the surface of the first grid region 106; The chlorophyll sensor unit 200 sequentially comprises a second gallium nitride layer 201, a second aluminum gallium nitride barrier layer 202 and a second gallium nitride cap layer 203 from bottom to top, wherein a second sensor source 204, a second sensor drain 205 and a second gate region 206 are arranged on the second gallium nitride cap layer 203 in parallel, and a sensing film with a chlorophyll a binding function is deposited on the surface of the second gate region 206; the structure of the ammonium ion sensor unit 300 from bottom to top sequentially comprises a third gallium nitride layer 301, a third aluminum gallium nitride barrier layer 302 and a third gallium nitride cap layer 303, wherein a second sensor source electrode 304, a third sensor drain electrode 305 and a third gate electrode region 306 are arranged on the third gallium nitride cap layer 303 in parallel, and an organic molecular polymer serving as an ammonium ion sensing film is deposited on the surface of the third gate electrode region 306. As a preferable sche