CN-121978499-A - Method for determining overdriving amount of probe and semiconductor device

CN121978499ACN 121978499 ACN121978499 ACN 121978499ACN-121978499-A

Abstract

The invention provides a method for determining probe overdriving amount and semiconductor equipment, and relates to the field of semiconductor testing, wherein the method comprises the steps of obtaining chip layout information of the surface of a wafer to be tested and testing position information of a probe assembly relative to the wafer, determining a contact area of the probe assembly on the wafer at a current testing position according to the chip layout information, so as to obtain a chip type of a group of chips covered by the contact area, wherein the chip type is related to a distance between the chips and the edge of the wafer, and determining target overdriving amount of the probe assembly at the current testing position according to the chip type of the group of chips by utilizing a preset overdriving amount determination rule. The method and the device are based on a chip classification mode of the chip related to the distance between the chip and the edge of the wafer, and corresponding target overdriving amounts are arranged on contact areas of the probe assembly corresponding to different chip types, so that the overdriving amount of the edge area of the wafer is adjusted.

Inventors

SUN CE
GUAN JIANGWEI
ZHANG KAI
XING TAO
LIU QINGHUA
XU WEILONG

Assignees

上海伟测半导体科技股份有限公司

Dates

Publication Date: 20260505
Application Date: 20260407

Claims (10)

1. A method for determining an overdriving amount of a probe pin for a semiconductor test apparatus, the method comprising: Acquiring chip layout information of the surface of a wafer to be tested and test position information of a probe assembly relative to the wafer, and determining a contact area of the probe assembly on the wafer at the current test position according to the chip layout information to obtain a group of chip types covered by the contact area, wherein the chip types are related to the distance between the chip and the edge of the wafer; And determining the target overdriving amount of the probe assembly at the current test position according to the chip type of a group of chips by utilizing a preset overdriving amount determination rule, wherein the target overdriving amount is positively correlated with the equivalent contact area in the wafer covered by the contact area represented by the chip type of the group of chips and positively correlated with the represented wafer inner spacing of the chips and the wafer edge.
2. The method for determining the overdriving amount of a probe according to claim 1, wherein determining the target overdriving amount of the probe assembly at the current test position according to the chip type of a group of the chips by using a preset overdriving amount determination rule comprises: Calculating a compensation amount; And compensating the preset original overdriving amount by the compensation amount to obtain a target overdriving amount.
3. The method of determining the probe overdrive amount according to claim 2, wherein the calculating the compensation amount includes: the chip type is associated with an equivalent contact coefficient monotonically related to the spacing; Determining an equivalent contact area coefficient of the probe assembly at a current test position based on a set of equivalent contact coefficients associated with a set of chips; and determining the compensation amount based on the equivalent contact area coefficient and a preset overdrive amount adjustable range.
4. The method for determining an overdriving amount of a probe according to claim 1, wherein, The chip types comprise the types of the chip to be tested, the edge chip which is determined based on the wafer edge and is arranged at the periphery of the chip to be tested, and the virtual chip outside the wafer.
5. The method for determining the overdriving amount of a probe according to claim 3, wherein the determining the compensation amount based on the equivalent contact area coefficient and a preset overdriving amount adjustable range includes: and adjusting the compensation amount within the preset overdriving amount adjustable range based on the equivalent contact area coefficient, wherein the preset overdriving amount adjustable range is determined based on the preset original overdriving amount and the preset minimum overdriving amount, and the maximum value of the compensation amount is the difference value between the preset original overdriving amount and the preset minimum overdriving amount.
6. The method of claim 2, wherein the semiconductor test apparatus further comprises a contact displacement feedback sensor for acquiring real-time displacement of the probe assembly after penetration into the wafer and outputting a corresponding displacement sensing signal, the method further comprising: acquiring a displacement sensing signal output by the contact displacement feedback sensor; and obtaining an actual overdriving amount based on the displacement sensing signal, and adjusting the actual overdriving amount of the probe assembly according to the deviation amount of the actual overdriving amount and a target overdriving amount so as to adapt to the target overdriving amount.
7. The method of claim 2, wherein the semiconductor test apparatus further comprises a contact pressure feedback sensor for collecting real-time pressure of the probe assembly after penetration into the wafer and outputting a corresponding pressure sensing signal, the method further comprising: Acquiring a pressure sensing signal output by the contact pressure feedback sensor; and obtaining an actual pressure value based on the pressure sensing signal, and adjusting the actual pressure value of the probe assembly according to the deviation amount of the actual pressure value and a target pressure value corresponding to the target overdrive amount so as to adapt to the target pressure value.
8. The method of determining an overdriving amount of a probe according to claim 2, further comprising: acquiring a needle mark image corresponding to the current test position, and obtaining a correction coefficient based on the deviation of the needle mark image relative to a preset target needle mark image; Before a next test position is tested, determining a corrected target overdrive amount corresponding to the next test position based on the correction coefficient and the target overdrive amount corresponding to the next test position; and performing overdrive control on the probe assembly at the next test position based on the corrected target overdrive amount.
9. The method of determining an overdriving amount of a probe according to claim 6, further comprising: Outputting a warning signal in response to the target overdriving amount or the corresponding reached actual overdriving amount exceeding a preset damage threshold of the wafer to be tested; and setting the preset damage threshold according to the product type and/or the thickness of the metal layer of the wafer to be tested.
10. A semiconductor test apparatus comprising a probe assembly, an overdrive compensation controller configured to perform the method of determining the probe overdrive as claimed in any one of claims 1 to 9.

Description

Method for determining overdriving amount of probe and semiconductor device Technical Field The disclosure relates to the field of semiconductor testing, and in particular relates to a method for determining probe overdriving amount and semiconductor equipment. Background In the conventional semiconductor wafer level test, bare chips on a wafer before packaging need to be penetrated through an oxide layer on the surface of a bonding pad by a probe assembly so as to establish stable electrical connection and screen out chips meeting requirements. In order to establish reliable contact between the probes and the pads, the probe assembly is typically controlled to continue to be depressed relative to the wafer for a certain stroke during testing to form an overdrive. The setting of the overdrive amount directly affects the contact state between the probe and the wafer. When the overdriving amount is smaller, insufficient contact between the probe and the position to be tested is possible, so that the stability of test signal transmission is affected, the accuracy of a test result is reduced, and when the overdriving amount is larger, the overlarge mechanical effect can be generated on the surface of the wafer, so that the damage risk of the surface of the chip is increased. Under the condition that the flexibility exists in a contact system formed by the probe, the probe card and the probe platform, the overdriving quantity issued by the semiconductor test equipment is not completely converted into the actual overdriving quantity of the probe tip relative to the surface of the wafer, but is distributed into the actual overdriving quantity of the probe end and the elastic deformation quantity of the whole system. Because of the difference of the integral contact supporting rigidity of the probes which are in actual contact and correspond to different test positions, the distribution ratio of the overdriving amount between the actual overdriving amount and the integral elastic deformation amount can also be changed. For example, after the probe assembly is moved to the edge of the wafer, the number of probes in the probe assembly that make actual contact with the wafer may decrease, and the overall contact support stiffness of the probes that make actual contact may also decrease. At this time, if the same overdrive amount is issued to the wafer test positions in different areas, the overdrive amount is often excessively applied to the wafer edge area. Such an actual application of uneven overdrive to the wafer can affect test accuracy and product yield. Disclosure of Invention In view of the above-described drawbacks of the related art, an object of the present disclosure is to provide a method of determining an overdriving amount of a probe and a semiconductor device, which solve the problems in the related art. The first aspect of the disclosure provides a method for determining an overdriving amount of a probe assembly in a semiconductor test device, which is characterized by determining an overdriving amount of the probe assembly in a wafer, wherein the method comprises the steps of obtaining chip layout information of a wafer surface to be tested and test position information of the probe assembly relative to the wafer, determining a contact area of the probe assembly in the wafer at a current test position according to the chip layout information, obtaining a chip type of a group of chips covered by the contact area, correlating the chip type with a distance between the chips and an edge of the wafer, and determining a target overdriving amount of the probe assembly in the current test position according to the chip type of the group of chips by utilizing a preset overdriving amount determination rule, wherein the target overdriving amount is positively correlated with an equivalent contact area in a wafer covered by the contact area characterized by the chip type of the group of chips and positively correlated with the characterized intra-wafer distance of the chips and the edge of the wafer. In an embodiment of the first aspect, determining the target overdriving amount of the probe assembly at the current test position according to the chip type of a group of chips by using a preset overdriving amount determination rule includes calculating a compensation amount, and compensating the preset original overdriving amount by using the compensation amount to obtain the target overdriving amount. In an embodiment of the first aspect, the calculating the compensation amount includes associating the chip type with an equivalent contact coefficient monotonically related to the pitch, determining an equivalent contact area coefficient of the probe assembly at a current test position based on a set of equivalent contact coefficients associated with a set of the chips, and determining the compensation amount based on the equivalent contact area coefficient and a preset overdrive adjustable range. In an embodiment