CN-121978737-A - Semiconductor device radiation response testing method and device based on natural muon event

CN121978737ACN 121978737 ACN121978737 ACN 121978737ACN-121978737-A

Abstract

The application relates to the technical field of radiation imaging and radiation effect measurement, and provides a method and a device for testing radiation response of semiconductor equipment based on a natural muon event. The method comprises the steps of placing the muon counters in the upper and lower directions of the semiconductor device to be tested, opening the two muon counters simultaneously in the working process of the semiconductor device to be tested, recording muon events passing through a sensor to be tested through coincidence counting of the two muon counters, extracting output data of the semiconductor device to be tested according to time and track information marked by the muon events, analyzing influence of the muon events in cosmic rays on the semiconductor device to be tested according to the extracted output data, detecting and analyzing radiation effects of the semiconductor device under the non-radiation source condition, and solving the problem of how to efficiently evaluate radiation effects and protection capability of the semiconductor device in-orbit radiation environment.

Inventors

LI QINGLING
CAO ZHENGYANG
HOU JIAYI
WEI CHUANXIN
GAO YUANPENG
ZHANG QUAN

Assignees

中国科学院上海技术物理研究所

Dates

Publication Date: 20260505
Application Date: 20260114

Claims (10)

1. A method for testing the radiation response of a semiconductor device based on natural muon events, comprising: Setting a first muon counter above the semiconductor equipment to be tested and setting a second muon counter below the semiconductor equipment to be tested; applying background radiation, and enabling the background radiation to pass through the first muon counter, the semiconductor device to be tested and the second muon counter; Detecting a muon event by using the first muon counter and the second muon counter in a coincidence mode, and determining muon event information, wherein the muon event information at least comprises muon event occurrence time and muon movement track information; determining a muon event occurrence position in the semiconductor device to be tested based on the muon motion trail information; determining output data of the semiconductor device to be tested according to the occurrence time and the occurrence position of the muon event, and analyzing and processing the output data to obtain the radiation response of the semiconductor device to be tested to the muon event.
2. The method of claim 1, wherein the active detection area of said first and second muon counters covers a region of interest of said semiconductor device under test; the region of interest of the semiconductor device to be tested is the region where the radiation response test is required.
3. The method of claim 1, wherein the first muon counter, the semiconductor device under test, and the second muon counter are all connected to an upper computer, and data acquisition clock synchronization is performed based on a local clock of the upper computer.
4. The process of claim 1 wherein each of the muon counters comprises a first conforming scintillator branch, a muon scintillator branch, and a second conforming scintillator branch, arranged in sequence from top to bottom, each of the scintillator branches comprising a silicon photomultiplier SiPM for generating pulsed electrical signals when the scintillators generate photon signals; performing coincidence counting detection of a muon event using the first muon counter and the second muon counter, comprising: For each of the muon counters, determining that a muon event is likely to occur in response to determining that sipms of the first, the muon scintillator and the second conforming scintillator branches all generate pulsed electrical signals; And determining that a muon event occurs in response to determining that the muon event is likely to occur in both the first and second muon counters and that the amplitude of the pulsed electrical signal generated by the sipms of the muon scintillator branches in the first and second muon counters is greater than a preset amplitude threshold.
5. The method of claim 4, wherein determining muon event information comprises: Coincidence counting is carried out on pulse electric signals generated by SiPM of a muon scintillator branch in the first muon counter and the second muon counter, and occurrence time of the muon events is determined; And determining the muon energy based on pulse electric signals generated by SiPM of the muon scintillator branches in the first muon counter and the second muon counter, and inverting the muon energy based on the muon energy by using a muon imaging method to obtain the muon motion track information.
6. The method of claim 1, wherein the semiconductor device under test is an image sensor under test; analyzing and processing the output data, including: Determining an image time sequence based on a muon event occurrence time and the muon event occurrence position; Preprocessing a mask image time sequence for the image time sequence, wherein the mask is determined based on the occurrence position of the muon event; Determining pixel points exceeding a preset image threshold value in each image of the mask image time sequence as candidate pixel points; carrying out spatial correlation clustering treatment on each candidate pixel point to obtain a cosmic ray muon event; Analyzing the radiation response of the to-be-detected imaging attempt sensor to the muon event based on the cosmic ray muon event; wherein the radiation response includes at least one of radiation response brightness, radiation response morphology, and recovery time.
7. The method of claim 6, wherein determining a time sequence of images based on a muon event occurrence time and said muon event occurrence location comprises: determining a target image, wherein the acquisition time stamp of the target image is the same as the occurrence time of the muon event, and the target image comprises an image at the occurrence position of the muon event; Respectively acquiring N images including the occurrence position of the muon event before and after the target image to form the image time sequence; Wherein N is a positive integer.
8. A semiconductor device radiation response testing apparatus based on natural muon events, comprising: a setting module configured to set a first muon counter above the semiconductor device to be tested and a second muon counter below the semiconductor device to be tested; a radiation module configured to apply background radiation such that the background radiation passes through the first muon counter, the semiconductor device under test, and the second muon counter; the detection module is configured to perform coincidence counting by utilizing the first and second muon counters and record muon events, wherein the recorded muon events at least comprise muon event occurrence time and muon movement track information; A determining module configured to determine a muon event occurrence position in the semiconductor device to be tested based on the muon motion trajectory information; The testing module is configured to determine output data of the semiconductor device to be tested according to the occurrence time and the occurrence position of the muon event, and analyze and process the output data to obtain the radiation response of the semiconductor device to be tested to the muon event.
9. An electronic device comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor implements the steps of the method according to any of claims 1 to 7 when the computer program is executed.
10. A computer readable storage medium storing a computer program, characterized in that the computer program when executed by a processor implements the steps of the method according to any one of claims 1 to 7.

Description

Semiconductor device radiation response testing method and device based on natural muon event Technical Field The application relates to the technical field of radiation imaging and radiation effect measurement, in particular to a method and a device for testing radiation response of semiconductor equipment based on a natural muon event. Background When the space astronomical telescope runs on orbit, the star guider in the precise image stabilizing system is relied on to provide real-time star point information with high frame frequency so as to guide the visual axis of the telescope to carry out micro-jitter correction and meet the image stabilizing requirement of long-time exposure in deep space observation. However, cosmic rays may interfere with the working stability and working accuracy of semiconductor devices such as CMOS sensors in the image stabilization system, and further cause misjudgment of attitude information, resulting in a telescope deviating from a target and failure in image stabilization. Therefore, for the scene that the star guider has extremely high real-time requirements, research on the influence of cosmic rays on the working stability and the working precision of semiconductor equipment is needed. Conventional cosmic radiation effect tests typically rely on accelerators to produce energetic particles to bombard the target surface, but such tests are not only expensive, but also because imaging needs to be performed under irradiation conditions, which can cause damage to the performance of the semiconductor device. Alternatively, background radiation generated using the atmospheric shower effect is an economical and safe method. However, natural cosmic ray events are random and have low flux, and it is often necessary to continue exposure for several hours to capture a small number of valid events, and it is difficult to accurately measure the effect of a cosmic ray on the operational stability and accuracy of a semiconductor device using a natural cosmic ray event. Disclosure of Invention In view of the above, the embodiment of the application provides a method and a device for testing the radiation response of semiconductor equipment based on a natural muon event, so as to solve the problem in the prior art that the cost for determining the radiation response testing method of the semiconductor equipment based on a traditional cosmic radiation effect test is high. In a first aspect of the embodiment of the present application, a method for testing radiation response of a semiconductor device based on a natural muon event is provided, including: Setting a first muon counter above the semiconductor equipment to be tested and setting a second muon counter below the semiconductor equipment to be tested; Applying background radiation, and enabling the background radiation to pass through the first muon counter, the semiconductor device to be tested and the second muon counter; The method comprises the steps of carrying out coincidence counting by using a first muon counter and a second muon counter, and recording muon events, wherein the recorded muon events at least comprise muon event occurrence time and muon movement track information; Determining a muon event occurrence position in the semiconductor device to be tested based on muon motion track information; and determining output data of the semiconductor device to be tested according to the occurrence time and the occurrence position of the muon event, and analyzing and processing the output data to obtain the radiation response of the semiconductor device to be tested to the muon event. In a second aspect of the embodiments of the present application, there is provided a semiconductor device radiation response testing apparatus based on natural muon events, including: a setting module configured to set a first muon counter above the semiconductor device to be tested and a second muon counter below the semiconductor device to be tested; a radiation module configured to apply background radiation such that the background radiation passes through the first muon counter, the semiconductor device to be tested, and the second muon counter; The detection module is configured to perform coincidence counting by utilizing the first muon counter and the second muon counter and record muon events, wherein the recorded muon events at least comprise muon event occurrence time and muon motion track information; A determining module configured to determine a muon event occurrence position in the semiconductor device to be tested based on muon motion trajectory information; The testing module is configured to determine output data of the semiconductor device to be tested according to the occurrence time and the occurrence position of the muon event, and analyze and process the output data to obtain the radiation response of the semiconductor device to be tested to the muon event. In a third aspect of the embodiments of the present application, t