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CN-121978780-A - Photonic crystal structure for optimizing energy band measurement and preparation method

CN121978780ACN 121978780 ACN121978780 ACN 121978780ACN-121978780-A

Abstract

The invention belongs to the technical field of integrated photonics devices, and provides a photonic crystal structure for optimizing energy band measurement and a preparation method thereof, wherein the photonic crystal structure comprises the following components: the photonic crystal thin film structure comprises a substrate layer and a photonic crystal thin film layer arranged on the substrate layer, and is characterized in that a periodic photonic crystal and a modification structure are arranged on the photonic crystal thin film layer, and the modification structure comprises a plurality of geometric scattering units which are randomly distributed outside the photonic crystal thin film layer. The invention utilizes the modified structure to increase the intensity of scattered light, can improve the signal intensity of dark field angle resolution measurement and realize the measurement of the energy band diagram.

Inventors

  • JIANG QIAO
  • LI JIAXIN
  • HAN SIYI
  • YU YING

Assignees

  • 太原理工大学

Dates

Publication Date
20260505
Application Date
20260121

Claims (9)

  1. 1. The photonic crystal structure for optimizing energy band measurement comprises a substrate layer (2) and a photonic crystal thin film layer (3) arranged on the substrate layer (2), and is characterized in that periodic photonic crystals and a modification structure are arranged on the photonic crystal thin film layer (3), and the modification structure comprises a plurality of geometric scattering units (5) which are randomly distributed on the periphery of the photonic crystal thin film layer (3).
  2. 2. The photonic crystal structure for optimizing energy band measurement according to claim 1, wherein the modification structure is made of the same material as the photonic crystal thin layer (3), and is arranged on the substrate layer (2) by etching synchronously with the photonic crystal through a photolithography layout.
  3. 3. The photonic crystal structure for optimizing energy band measurement according to claim 1, wherein the geometrical scattering units (5) of the modified structure are nanospheres and are arranged on the surface of the photonic crystal by spin coating or spray doping process.
  4. 4. A photonic crystal structure for optimizing energy band measurement according to claim 1, characterized in that said geometrical scattering elements (5) are circular, elliptical, square, triangular or polygonal, said photonic crystal being a one-dimensional photonic crystal or a two-dimensional photonic crystal.
  5. 5. The photonic crystal structure for optimizing energy band measurement according to claim 1, further comprising a base layer (1), wherein the substrate layer (2) is arranged on the base layer (1), the material of the substrate layer (2) is titanium dioxide, and the base layer (1) is a conductive ITO glass or silicon oxide base.
  6. 6. A photonic crystal structure for optimizing energy band measurement according to claim 1, characterized in that the diameter of the geometrical scattering elements (5) is 3-20 times the photonic crystal period of the photonic crystal thin film layer (3).
  7. 7. A method of preparing a photonic crystal structure for optimizing energy band measurements according to any of claims 1-6, comprising the steps of: Determining the geometric parameters of a photonic crystal film layer (3), wherein the geometric parameters comprise the geometric parameters of a photonic crystal and a geometric scattering unit (5); step two, determining a photoetching layout according to the geometric parameters of the photonic crystal film layer (3); Spin coating photoresist on the substrate layer (2), baking, performing electron beam lithography on the photoresist through a photoetching layout, and developing and fixing to finally obtain the photonic crystal film layer (3) containing the modified structure.
  8. 8. A method of preparing a photonic crystal structure for optimizing energy band measurements according to any of claims 1-6, comprising the steps of: Determining the geometric parameters of a photonic crystal film layer (3), wherein the geometric parameters comprise the geometric parameters of a photonic crystal and a geometric scattering unit (5); step two, determining a photoetching layout according to the geometric parameters of the photonic crystal film layer (3); Spin coating photoresist on the substrate layer (2), baking, developing and fixing the photoresist through the photoetching layout, Plating a photonic crystal material in a periodic structure formed by photoresist to form a photonic crystal film layer (3) containing a modified structure; And fifthly, removing the photoresist to finally form the photonic crystal structure for optimizing the energy band measurement.
  9. 9. The method according to any one of claims 7 to 8, wherein in the third step, PMMA A4 photoresist is spin-coated with a spin coater, the spin coating parameters are 3000 rad/s,60 s, and baked at 160 ℃ for 10min.

Description

Photonic crystal structure for optimizing energy band measurement and preparation method Technical Field The invention belongs to the technical field of integrated photonics devices, and particularly relates to a photonic crystal structure for optimizing energy band measurement and a preparation method thereof. Background The photonic crystal is an artificial optical material with a periodic dielectric structure, has wide application in the fields of optical communication, sensing, lasers and the like, has a unique photonic band structure, and is essentially a distribution spectrum of the frequency range of 'allowed propagation' and 'forbidden propagation' of photons in the periodic dielectric structure. In general, "propagation-allowed" and "propagation-forbidden" are referred to as a band-allowed and a band-forbidden, and the desired photonic device can be manufactured by utilizing the properties of the band-allowed and the band-forbidden. For example, electromagnetic shielding and anti-interference devices are "complete suppression" of electromagnetic waves of specific frequencies by using photonic bandgaps, and miniaturized electromagnetic shielding materials can be designed. In summary, by precisely designing the structure, such as adjusting factors such as period and shape, precise regulation and control on photon propagation can be achieved. The energy band of the photonic crystal can be measured by a transmission/reflection angle resolution spectrum method, a grating coupling method, a near-field optical microscope and the like. In the conventional process, the dispersion characteristics of the photonic crystal and the energy band structure thereof are often studied by bright field transmission or reflection angle resolution spectroscopy. However, in the actual measurement process, the collected angular resolution spectrum data contains both the resonance response information of the photonic crystal and the incident light signal, and the superposition of these different signals can interfere the result of measuring the energy band of the photonic crystal, which finally results in that the characteristic energy band cannot accurately reveal the intrinsic mode characteristics of the photonic crystal. In order to avoid such band measurement problems due to the presence of incident light, the incident light may be prevented from entering the spectral detector by a dark field angle resolved spectroscopic technique, thereby enabling accurate measurement of the intrinsic band of the photonic crystal. However, since the dark field angle resolved measurement method relies on scattering of light, whereas the structure of conventional photonic crystals is quite complete, the scattered light flux is much lower than conventional transmitted and reflected signals, and thus the dark field signal is usually very weak. The inherent limitation restricts the sensitivity and efficiency of the dark field angle resolution on the measurement of the intrinsic energy band of the photonic crystal, and the method creates a hindrance for the subsequent analysis and application of the optical characteristics of the photonic crystal. Disclosure of Invention In order to solve the technical problem that the measurement sensitivity and efficiency are limited due to weak dark field signals, the invention provides a photonic crystal structure for optimizing energy band measurement and a preparation method thereof. In order to solve the technical problems, the photonic crystal structure for optimizing energy band measurement comprises a substrate layer and a photonic crystal thin film layer arranged on the substrate layer, wherein periodic photonic crystals and a modification structure are arranged on the photonic crystal thin film layer, and the modification structure comprises a plurality of geometric scattering units which are randomly distributed outside the photonic crystal thin film layer. The modification structure is the same as the photonic crystal thin layer material, and is arranged on the substrate layer through synchronous etching of the photoetching layout and the photonic crystal. The geometrical scattering unit of the modified structure is nanospheres and is arranged on the surface of the photonic crystal through spin coating or spray doping process. The geometric scattering unit is round, oval, square, triangular or polygonal, and the photonic crystal is one-dimensional photonic crystal or two-dimensional photonic crystal. The photonic crystal structure for optimizing energy band measurement further comprises a substrate layer, wherein the substrate layer is arranged on the substrate layer, the substrate layer is made of titanium dioxide, and the substrate layer is made of conductive ITO glass or silicon oxide. The diameter of the geometric scattering unit is 3-20 times of the photonic crystal period of the photonic crystal thin film layer. In addition, the invention also provides a preparation method of the photonic