CN-121978861-A - Pellicle, exposure original plate, exposure apparatus and method for manufacturing semiconductor device

Abstract

The invention provides a protective film assembly, an exposure original plate, an exposure device and a method for manufacturing a semiconductor device. The protective film assembly (10) comprises a protective film (12) and a support frame (14) for supporting the protective film, wherein the protective film (12) comprises a carbon-based film with a carbon content of 40 mass% or more, and the protective film is contacted with the support frame, thereby satisfying the following condition 1. Condition 1 the roughness Ra of the surface of the support frame contacting the protective film is 1.0 μm or less.

Inventors

• ONO YOSUKE

Assignees

• 三井化学株式会社

Dates

Publication Date

20260505

Application Date

20210803

Priority Date

20200805

Claims (9)

1. 1. A pellicle assembly comprising a pellicle and a support frame supporting the pellicle, The protective film comprises at least 1 selected from the group consisting of a carbon-based film having a carbon content of 40 mass% or more, polysilicon, and silicon carbide, The protective film is contacted with the supporting frame, The following condition 1 is satisfied, [ Condition 1] The roughness Ra of the surface of the support frame, which is in contact with the protective film, is 1.0 [ mu ] m or less.
2. 2. The protective film assembly according to claim 1, wherein the protective film comprises a carbon-based film having a carbon content of 40 mass% or more.
3. 3. The pellicle assembly of claim 2, the carbon-based film being a film comprising carbon nanotubes.
4. 4. The pellicle assembly according to claim 1 or 2, the support frame being provided with a first support frame supporting the pellicle membrane and a second support frame connected to the first support frame.
5. 5. An exposure master comprising: Master with pattern, and The pellicle assembly according to any one of claims 1 to 4 attached to a surface of the master on the side having the pattern.
6. 6. An exposure apparatus having the exposure master of claim 5.
7. 7. An exposure apparatus, comprising: A light source for emitting exposure light, The exposure master according to claim 5, and An optical system for guiding the exposure light emitted from the light source to the exposure master, The exposure master is arranged such that the exposure light emitted from the light source is irradiated to the master through the protective film.
8. 8. The exposure apparatus according to claim 7, wherein the exposure light is EUV light.
9. 9. A method of manufacturing a semiconductor device, comprising: a step of irradiating exposure light emitted from a light source through the protective film of the exposure master according to claim 5 to the master and reflecting the exposure light by the master And exposing the sensing substrate to a pattern by allowing the exposure light reflected by the original plate to pass through the protective film and irradiate the sensing substrate.

Description

Pellicle, exposure original plate, exposure apparatus and method for manufacturing semiconductor device The present application is a divisional application of the application patent application having the application number 202180046004.1, the application day 2021, the application day 8, and the application name "pellicle, exposure master, exposure apparatus, method of manufacturing pellicle, and method of manufacturing semiconductor device". Technical Field The present invention relates to a pellicle, an exposure master, an exposure apparatus, a method for manufacturing a pellicle, and a method for manufacturing a semiconductor device. Background In a technique (photolithography) of forming a pattern by applying a photosensitive substance to a surface of an object such as an electronic component, a printed board, or a display panel and exposing the resultant object to light in a pattern, a transparent substrate having a pattern formed on one surface thereof is used, which is called a photomask. In recent years, with the development of high definition of exposure patterns, EUV (Extreme UltraViolet: extreme UltraViolet) light of a shorter wavelength is increasingly used as a light source for exposure instead of DUV (Deep UltraViolet) light. In an exposure method using EUV light, a photomask having a reflective layer that reflects exposure light is sometimes used. For example, patent document 1 discloses a pellicle for photolithography, which is characterized in that the surface roughness of the inner surface of the frame of the pellicle is in the range of Ra0.3 to 0.9 μm, rt4.0 to 8.5 μm, and RMS0.3 to 1.1 μm, and the inner surface of the frame is coated with an adhesive resin. For example, patent document 2 discloses a large-sized liquid crystal pellicle having a pellicle area of 1000cm 2 or more, characterized in that the surface roughness of the pellicle adhesive surface of the frame is ra0.4 μm to 4 μm, and the pellicle is adhered via an adhesive. For example, patent document 3 discloses that sandblasting is performed for easy detection when dust or the like adheres to the frame of the pellicle. Patent document 1 Japanese patent laid-open No. 11-167198 Patent document 2 Japanese patent application laid-open No. 2006-184904 Patent document 3 Japanese patent application laid-open No. 2012-159771 Disclosure of Invention Problems to be solved by the invention In the photolithography, exposure to EUV (Extreme Ultra Violet: extreme ultraviolet) light is performed in a vacuum environment. At the start of exposure, the entire exposure apparatus is evacuated, and the pellicle assembly and the photomask are disposed in a load-lock chamber connected to the interior of the exposure apparatus, and the interior of the load-lock chamber is changed from an atmospheric pressure environment to a vacuum environment. When the load-lock chamber is evacuated, the air pressure outside the pellicle assembly tends to decrease faster than the air pressure inside the pellicle assembly. Therefore, as shown in fig. 1, the pellicle 12 supported by the support frame 14 bulges in a direction from the inside of the pellicle assembly 10 toward the outside of the pellicle assembly 10 due to the evacuation of the exposure apparatus. On the other hand, at the end of exposure, the pellicle assembly is transported from within the exposure apparatus to the load-lock chamber, which is internally changed from a vacuum environment to an atmospheric pressure environment. Therefore, as shown in fig. 2, at the end of exposure, the pellicle 12 supported by the support frame 14 is pressed in a direction from the outside of the pellicle assembly 10 toward the inside of the pellicle assembly 10. Here, as shown in fig. 3 (a) and (b), there is a problem that stress concentration is likely to occur at the edge portion of the support frame on the inner side of the pellicle assembly in the contact surface between the support frame and the pellicle, and the pellicle is likely to be broken. Further, as described in patent document 3, when the pellicle membrane is sandblasted for easy detection of foreign matter, it is considered that the above problem is more remarkable. In addition, when the pellicle is pressed by the air flow during the operation of the photomask to which the pellicle assembly is attached, the pellicle bulges as in fig. 1 and 2, not only the evacuation of the interior of the exposure apparatus but also the opening of the atmospheric pressure. An object of one embodiment of the present disclosure is to provide a pellicle assembly, an exposure master, and an exposure apparatus, which can suppress breakage of a pellicle. Another object of another embodiment of the present disclosure is to provide a method for manufacturing a pellicle assembly and a method for manufacturing a semiconductor device, which can suppress breakage of a pellicle. Means for solving the problems Specific embodiments for solving the above problems include the following. <