CN-121978869-A - Random simulation method for dry development and related products

CN121978869ACN 121978869 ACN121978869 ACN 121978869ACN-121978869-A

Abstract

The application discloses a random simulation method for dry development and a related product, which can be applied to the technical field of semiconductors, and the method comprises the following steps: firstly, determining a core polymerization condition corresponding to a target photoresist structure by using a preset photoresist polymerization model based on the target photoresist structure. And then constructing a target three-dimensional grid based on the core aggregation condition. Wherein, the kind and the number of the chemical bonds corresponding to each core are recorded in the target three-dimensional grid. And finally, combining the target three-dimensional grid, and determining a development contour corresponding to the target photoresist structure by using a preset dry development random model. Therefore, by introducing the photoresist polymerization model and the dry development random model to carry out simulation prediction on the photoresist morphology under the dry development process, the accuracy of the simulation prediction is improved.

Inventors

Fan taian
DONG LISONG
SU XIAOJING
WEI YAYI

Assignees

中国科学院微电子研究所

Dates

Publication Date: 20260505
Application Date: 20260123

Claims (10)

1. A random simulation method for dry development, the method comprising: determining a core polymerization condition corresponding to a target photoresist structure by using a preset photoresist polymerization model based on the target photoresist structure; Constructing a target three-dimensional grid based on the core aggregation condition, wherein the type and the number of chemical bonds corresponding to each core are recorded in the target three-dimensional grid; and combining the target three-dimensional grid, and determining a development profile corresponding to the target photoresist by using a preset dry development random model.
2. The method of claim 1, wherein the determining, based on the target photoresist structure, a core polymerization condition corresponding to the target photoresist structure using a preset photoresist polymerization model comprises: Determining an electromagnetic field energy distribution in a target photoresist structure; Converting the electromagnetic field energy distribution into a radiation-sensitive body distribution; And determining the core polymerization condition corresponding to the target photoresist structure by using a preset photoresist polymerization model in combination with the radiation sensitive body distribution.
3. The method of claim 1, wherein the aggregation rule corresponding to the preset photoresist aggregation model is: Traversing each target core having a radiation sensitive body, and all radiation sensitive bodies contained in the target cores, if there is a second core adjacent to the first core that also has a radiation sensitive body, constructing an aggregation between the first core and the second core, and consuming the radiation sensitive bodies of the first core and the second core; If the second core adjacent to the first core does not have a radiation sensitive body, ignoring; the first core is any one of the target cores, and the second core is any one of the target cores.
4. The method of claim 1, wherein the determining a development profile corresponding to the target photoresist structure using a pre-set dry development stochastic model in conjunction with the target three-dimensional grid comprises: Defining a reaction tendency function corresponding to each subvolume based on the target three-dimensional grid; And determining a development profile corresponding to the target photoresist structure based on a Monte Carlo cycle by combining a preset development time and the reaction tendency function.
5. The method of claim 4, wherein the reaction trend function is expressed as: ; In the middle of As a reaction tendency of the sn—o bond, As a function of the first rate constant, In order to be the number of Sn-O bonds, Is the reaction tendency of Sn-O-Sn bonds, As a function of the second rate constant, Is the number of Sn-O-Sn bonds.
6. The method of claim 4, wherein the determining a development profile corresponding to the target photoresist structure based on a monte carlo cycle in combination with a preset development time and the reaction trend function comprises: defining a development front layer, wherein the development front layer is a layer formed by all subvolumes contacted with HBr; Determining a sum of reaction rates, and a time step within a neutron volume of the developing front layer based on the reaction trend function; Combining the reaction rate and the reaction sum, and determining a subvolume in which a reaction occurs in the development front layer and a corresponding reaction type based on a preset random selection rule; And updating the development front layer based on the subvolume of the reaction in the development front layer and the reaction type by combining with a preset threshold value, updating the actual development time based on the time step, and determining the development profile corresponding to the target photoresist structure until the actual development time reaches the preset development time.
7. The method of claim 1, wherein the updating the development front layer comprises: If the current subvolume is dissolved, adding the subvolume in the adjacent radius to the updated development front layer by taking the current subvolume as the center; the near radius is the radius of the range of action of HBr.
8. A random simulation apparatus for dry development, comprising: the first determining module is used for determining a core polymerization condition corresponding to a target photoresist structure by utilizing a preset photoresist polymerization model based on the target photoresist structure; The construction module is used for constructing a target three-dimensional grid based on the core aggregation condition, wherein the type and the number of chemical bonds corresponding to each core are recorded in the target three-dimensional grid; And the second determining module is used for determining a development profile corresponding to the target photoresist by combining the target three-dimensional grid and utilizing a preset dry development random model.
9. A random simulation apparatus for dry development, comprising: A memory for storing a computer program; A processor for implementing the steps of the random simulation method for dry development according to any one of claims 1 to 7 when executing the computer program.
10. A readable storage medium, characterized in that it has stored thereon a computer program which, when executed by a processor, implements the steps of the random simulation method for dry development according to any one of claims 1 to 7.

Description

Random simulation method for dry development and related products Technical Field The application relates to the technical field of semiconductors, in particular to a random simulation method for dry development and a related product. Background As a new type of negative photoresist, an organometallic photoresist (Metal-Organic resists, MOx) plays an increasing role in Extreme ultraviolet lithography (EUV). At the same time, the development of dry development avoids the problem of pattern collapse caused by capillary force effect, so that the development is popular. Dry development in combination with MOx is a novel development technique that converts the traditional liquid development process into a dry process, uses HBr gas as a developer, reacts with the photoresist, and completes the development work. In the existing advanced chip manufacturing scene, the minimum pattern size reaches about 10nm, and the random effect is obvious. However, for simulation of dry development, the model adopted by the prior art is only a continuous model, which results in the problem that the accuracy of simulation prediction is low in the prior art. Therefore, how to improve accuracy of simulation prediction is a problem that needs to be solved by those skilled in the art. Disclosure of Invention Based on the problems, the application provides a random simulation method for dry development and related products, which are used for performing simulation prediction on the photoresist morphology under the dry development process by introducing a photoresist polymerization model and a dry development random model, so that the accuracy of the simulation prediction is improved. In a first aspect, an embodiment of the present application provides a random simulation method for dry development, including: determining a core polymerization condition corresponding to a target photoresist structure by using a preset photoresist polymerization model based on the target photoresist structure; Constructing a target three-dimensional grid based on the core aggregation condition, wherein the type and the number of chemical bonds corresponding to each core are recorded in the target three-dimensional grid; and combining the target three-dimensional grid, and determining a development profile corresponding to the target photoresist by using a preset dry development random model. Optionally, the determining, based on the target photoresist structure, a core polymerization condition corresponding to the target photoresist structure by using a preset photoresist polymerization model includes: Determining an electromagnetic field energy distribution in a target photoresist structure; Converting the electromagnetic field energy distribution into a radiation-sensitive body distribution; And determining the core polymerization condition corresponding to the target photoresist structure by using a preset photoresist polymerization model in combination with the radiation sensitive body distribution. Optionally, the aggregation rule corresponding to the preset photoresist aggregation model is: Traversing each target core having a radiation sensitive body, and all radiation sensitive bodies contained in the target cores, if there is a second core adjacent to the first core that also has a radiation sensitive body, constructing an aggregation between the first core and the second core, and consuming the radiation sensitive bodies of the first core and the second core; If the second core adjacent to the first core does not have a radiation sensitive body, ignoring; the first core is any one of the target cores, and the second core is any one of the target cores. Optionally, the determining, by using a preset dry development stochastic model, a development profile corresponding to the target photoresist structure in combination with the target three-dimensional grid includes: Defining a reaction tendency function corresponding to each subvolume based on the target three-dimensional grid; And determining a development profile corresponding to the target photoresist structure based on a Monte Carlo cycle by combining a preset development time and the reaction tendency function. The reaction tendency function can be expressed as follows: ; In the middle of As a reaction tendency of the sn—o bond,As a function of the first rate constant,In order to be the number of Sn-O bonds,Is the reaction tendency of Sn-O-Sn bonds,As a function of the second rate constant,Is the number of Sn-O-Sn bonds. Optionally, the determining, based on a monte carlo cycle, a development profile corresponding to the target photoresist structure by combining a preset development time and the reaction tendency function includes: defining a development front layer, wherein the development front layer is a layer formed by all subvolumes contacted with HBr; Determining a sum of reaction rates, and a time step within a neutron volume of the developing front layer based on the reaction trend f