CN-121979349-A - High-voltage-resistant secondary voltage stabilizer

CN121979349ACN 121979349 ACN121979349 ACN 121979349ACN-121979349-A

Abstract

The invention relates to the field of voltage regulators, in particular to a high-voltage-resistant secondary voltage regulator, which comprises a self-starting module, a bias module and an error detection module, wherein the error detection module comprises an opening adjusting component, a regulating MOS tube P3 and an error amplification unit, the initial power-on output VCC is 0V, the self-starting module controls the bias module to start working, the bias module outputs static bias voltage and bias current to the error detection module, the error amplification module samples VCC, converts voltage fluctuation of the VCC into current change and transmits the current change to the regulating MOS tube P3, the drain electrode potential of the regulating MOS tube P3 is adjusted in real time, an error signal after the drain electrode output of the regulating MOS tube P3 is amplified is transmitted to the control end of the opening adjusting component, the conduction degree of the opening adjusting component is adjusted, the transmission current of the high-voltage power source VIN flowing to the VCC is controlled, and stable output of the VCC under the condition that the wide-range high-voltage power source VIN is directly input is realized.

Inventors

GUO XIN
YANG RUICONG
GAO GENGHUI

Assignees

厦门元顺微电子技术有限公司

Dates

Publication Date: 20260505
Application Date: 20260407

Claims (8)

1. The high-voltage-resistant secondary voltage stabilizer is characterized by comprising a self-starting module, a biasing module and an error detection module, wherein the error detection module comprises an opening adjusting component, a regulating MOS tube P3 and an error amplifying unit; The high-voltage power supply VIN is input to the input ends of the self-starting module, the bias module and the opening adjusting component, the output end of the self-starting module is electrically connected with the input end of the bias module, the output end of the opening adjusting component is electrically connected with the input end of the error amplifying unit and the source electrode of the regulating MOS tube P3 and outputs VCC, the output end of the error amplifying unit is electrically connected with the grid electrode of the regulating MOS tube P3, and the drain electrode of the regulating MOS tube P3 and the output end of the bias module are electrically connected with the control end of the opening adjusting component.
2. The high voltage resistant secondary voltage regulator according to claim 1, wherein the error amplifying unit comprises a triode Q0, a triode Q1, a MOS tube P4, a MOS tube P5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a capacitor C4 and a capacitor C5; The output end of the opening adjusting component is electrically connected with one end of a resistor R5, one end of a resistor R7 and one end of a resistor R8, the other end of the resistor R5 is electrically connected with one end of a resistor R6, the base of a triode Q0 and the base of a triode Q1, the other end of the resistor R7 is electrically connected with the source of a MOS tube P4, the other end of the resistor R8 is electrically connected with the source of a MOS tube P5, the grid and the drain of the MOS tube P4 are electrically connected with the collector of the triode Q0 and the grid of the MOS tube P5, the drain of the MOS tube P5 is electrically connected with the collector of a triode Q1 and one end of a capacitor C5 and serves as an output end to be electrically connected with the grid of a regulating MOS tube P3, the emitter of the triode Q0 is electrically connected with one end of a resistor R9, and the emitter of the triode Q1 is electrically connected with the other end of the resistor R9 and one end of a resistor R10; the other end of the resistor R6, the other end of the resistor R10, the other end of the capacitor C4 and the other end of the capacitor C5 are grounded.
3. The high voltage resistant secondary voltage regulator according to claim 1, wherein the bias module comprises a MOS transistor P0, a MOS transistor P1, a MOS transistor P2, a MOS transistor N1, a MOS transistor N2, a MOS transistor N3, a MOS transistor HP1, a MOS transistor HN2 and a resistor R2; the high-voltage power supply VIN is input to the source electrode of the MOS tube P0, the source electrode of the MOS tube P1 and the source electrode of the MOS tube P2; The output end of the self-starting module is electrically connected with one end of a resistor R2 and the grid electrode of a MOS tube HP1, the other end of the resistor R3 is electrically connected with the drain electrode of a MOS tube P0, the grid electrode of the MOS tube P1 and the grid electrode of the MOS tube P2, the drain electrode of the MOS tube P1 is electrically connected with the source electrode of the MOS tube HP1, the grid electrode of the MOS tube HN2 and the grid electrode of the MOS tube N1, the source electrode of the MOS tube N1 is electrically connected with the grid electrode of the MOS tube N2, the drain electrode of the MOS tube N3 is electrically connected with the drain electrode of the MOS tube P3 and the source electrode of the MOS tube HN2, and the drain electrode of the MOS tube HN2 is used as an output end and is electrically connected with the control end of the opening adjusting component; the source electrode of the MOS tube N2 and the source electrode of the MOS tube N3 are grounded.
4. The high voltage resistant secondary voltage stabilizer according to claim 1, wherein the self-starting module comprises a MOS tube HN1, a MOS tube N0, a resistor R1, a capacitor C0 and a capacitor C1; The high-voltage power supply VIN is input to one end of a resistor R0, the other end of the resistor R0 is electrically connected with the drain electrode of a MOS tube N0, one end of a capacitor C0 and the grid electrode of a MOS tube HN1, the source electrode of the MOS tube HN1 is electrically connected with the grid electrode of the MOS tube N0, one end of the resistor R1 and one end of the capacitor C1, and the drain electrode of the MOS tube HN1 is used as an output end to be electrically connected with the input end of the biasing module; The source electrode of the MOS tube N0, the other end of the resistor R1, the other end of the capacitor C0 and the other end of the capacitor C1 are grounded.
5. The high voltage resistant secondary voltage stabilizer according to claim 1, wherein the opening adjusting component comprises an MOS tube HP2; The high-voltage power supply VIN is input to the source electrode of the MOS tube HP2, the drain electrode of the regulating MOS tube P3 and the output end of the biasing module are electrically connected with the grid electrode of the MOS tube HP2, and the drain electrode of the MOS tube HP2 is electrically connected with the input end of the error amplifying unit and the source electrode of the regulating MOS tube P3 and outputs VCC.
6. The high voltage resistant secondary voltage regulator according to claim 1, wherein the error detection module further comprises a surge suppression unit, the surge suppression unit comprises a MOS tube N4, a resistor R3, a resistor R4 and a capacitor C3; The high-voltage power supply VIN is input to one end of the resistor R4 and one end of the capacitor C3, the other end of the resistor R4 is electrically connected with the drain electrode of the MOS tube N4, the other end of the capacitor C3 is electrically connected with the grid electrode of the MOS tube N4 and one end of the resistor R3, and the other end of the resistor R3 and the source electrode of the MOS tube N4 are electrically connected with the control end of the opening adjusting component.
7. The high voltage resistant secondary voltage regulator as claimed in claim 5, wherein the MOS tube HP2 is a high voltage PMOS tube.
8. The high voltage resistant secondary voltage regulator according to claim 4, wherein the following conditional expression is satisfied, (W/L) P4 ：（W/L） P5 =1:1; Wherein, (W/L) P4 and (W/L) P5 are the aspect ratio of MOS tube P4 and MOS tube P5 respectively; The resistance values of the resistor R7 and the resistor R8 are equal.

Description

High-voltage-resistant secondary voltage stabilizer Technical Field The invention relates to the field of voltage regulators, in particular to a high-voltage-resistant secondary voltage regulator. Background The voltage stabilizer is a power device capable of automatically adjusting output voltage to keep the output voltage stable, and has the core function of ensuring that the output voltage is kept near a preset value through dynamic adjustment of an internal circuit when the input voltage fluctuates or the load changes, so as to provide a continuous and stable power supply environment for electric equipment. The secondary voltage stabilizer is voltage stabilizing equipment positioned on a secondary side (output side) in a power supply framework, and has the core function of ensuring that electric equipment can still obtain stable power supply when input voltage fluctuates or load changes by dynamically adjusting output voltage. It is typically used in conjunction with a primary power converter, such as a switching power supply, by which an input voltage is first converted to an intermediate voltage, which is then further regulated by a secondary voltage regulator to the exact voltage value required by the device. The design can not only improve the power conversion efficiency, but also meet the power supply requirements of modern electronic equipment on low voltage and high precision. The existing high-voltage secondary voltage stabilizer mostly adopts an independent pre-voltage stabilizing module to realize the isolation of a high-voltage domain and a low-voltage domain. The partial scheme adopts high-voltage resistor voltage division clamping bias, has large static power consumption and strong noise coupling, and has poor low-voltage starting capability. In the aspect of error amplification and compensation, the conventional scheme adopts standard CMOS operational amplifier and Miller compensation to realize error amplification and loop stabilization, and has the conditions of limited bandwidth and slow transient response. Disclosure of Invention The invention aims to provide a high-voltage-resistant secondary voltage stabilizer, which aims to solve the problems of larger circuit loss and layout area, poorer low-voltage starting capability, limited bandwidth and slow transient response of the existing secondary voltage stabilizer. In order to achieve the above purpose, the present invention adopts the following technical scheme: The high-voltage-resistant secondary voltage stabilizer comprises a self-starting module, a biasing module and an error detection module, wherein the error detection module comprises an opening degree adjusting component, a regulating MOS tube P3 and an error amplifying unit; The high-voltage power supply VIN is input to the input ends of the self-starting module, the bias module and the opening adjusting component, the output end of the self-starting module is electrically connected with the input end of the bias module, the output end of the opening adjusting component is electrically connected with the input end of the error amplifying unit and the source electrode of the regulating MOS tube P3 and outputs VCC, the output end of the error amplifying unit is electrically connected with the grid electrode of the regulating MOS tube P3, and the drain electrode of the regulating MOS tube P3 and the output end of the bias module are electrically connected with the control end of the opening adjusting component. Further, the error amplifying unit comprises a triode Q0, a triode Q1, a MOS tube P4, a MOS tube P5, a resistor R6, a resistor R7, a resistor R8, a resistor R9, a resistor R10, a capacitor C4 and a capacitor C5; The output end of the opening adjusting component is electrically connected with one end of a resistor R5, one end of a resistor R7 and one end of a resistor R8, the other end of the resistor R5 is electrically connected with one end of a resistor R6, the base of a triode Q0 and the base of a triode Q1, the other end of the resistor R7 is electrically connected with the source of a MOS tube P4, the other end of the resistor R8 is electrically connected with the source of a MOS tube P5, the grid and the drain of the MOS tube P4 are electrically connected with the collector of the triode Q0 and the grid of the MOS tube P5, the drain of the MOS tube P5 is electrically connected with the collector of a triode Q1 and one end of a capacitor C5 and serves as an output end to be electrically connected with the grid of a regulating MOS tube P3, the emitter of the triode Q0 is electrically connected with one end of a resistor R9, and the emitter of the triode Q1 is electrically connected with the other end of the resistor R9 and one end of a resistor R10; the other end of the resistor R6, the other end of the resistor R10, the other end of the capacitor C4 and the other end of the capacitor C5 are grounded. Further, the bias module comprises a MOS tube P0, a MOS tube P1, a M