CN-121979354-A - Band gap reference voltage source
Abstract
The embodiment of the application discloses a band gap reference voltage source which comprises a band gap reference core module, a curvature compensation module and a logic control module, wherein the curvature compensation module comprises a plurality of compensation switches, the band gap reference core module is connected with the curvature compensation module and the logic control module, the logic control module is connected with the compensation switches, the band gap reference core module is used for generating reference voltage, the logic control module determines a target compensation interval based on negative temperature coefficient voltage included in the reference voltage and generates a switching signal for controlling whether the compensation switches are conducted or not according to the target compensation interval, the curvature compensation module generates compensation current when the compensation switches are conducted, the band gap reference core module obtains compensation voltage according to the compensation current, and the compensation voltage is superposed with the reference voltage to output the target reference voltage. According to the embodiment of the application, through an intelligent start-stop compensation mechanism, the static power consumption is obviously reduced while the low-temperature drift is realized.
Inventors
- HE ZHIYUAN
- GUO YUHUI
- RONG HAITAO
- XU QING
Assignees
- 奇瑞汽车股份有限公司
Dates
- Publication Date
- 20260505
- Application Date
- 20260203
Claims (10)
- 1. The band gap reference voltage source is characterized by comprising a band gap reference core module (1), a curvature compensation module (2) and a logic control module (3), wherein the curvature compensation module (2) comprises a plurality of compensation switches, the band gap reference core module (1) is connected with the curvature compensation module (2) and the logic control module (3), and the logic control module (3) is connected with the compensation switches; The bandgap reference core module (1) is used for generating a reference voltage, wherein the reference voltage comprises a negative temperature coefficient voltage; The logic control module (3) determines a target compensation interval based on the negative temperature coefficient voltage and generates a switching signal for controlling whether the compensation switch is conducted or not according to the target compensation interval; The curvature compensation module (2) generates compensation current when the compensation switch is conducted, the compensation current is input into the band-gap reference core module (1), the band-gap reference core module (1) obtains compensation voltage according to the compensation current, and the compensation voltage is overlapped with the reference voltage to output target reference voltage.
- 2. The bandgap reference voltage source according to claim 1, characterized in that the bandgap reference core module (1) comprises a first operational amplifier (a 1 ), a first resistor (R 1 ), a second resistor (R 2 ), a third resistor (R 3 ), a fourth resistor (R 4 ), a first transistor (Q 1 ), a second transistor (Q 2 ) and a first switching transistor (M P1 ); The non-inverting input end of the first operational amplifier (A 1 ) is respectively connected with the first resistor (R 1 ) and the third resistor (R 3 ), and the inverting input end of the first operational amplifier (A 1 ) is respectively connected with the second resistor (R 2 ), the emitter of the first triode (Q 1 ) and the negative temperature coefficient voltage; The first resistor (R 1 ) is connected with the emitter of the second triode (Q 2 ), one end of the fourth resistor (R 4 ) is respectively connected with the second resistor (R 2 ), the third resistor (R 3 ) and the curvature compensation module (2), and the other end of the fourth resistor is sequentially connected with the target reference voltage and the drain of the first switch tube (M P1 ); The grid electrode of the first switching tube (M P1 ) is connected with the output end of the first operational amplifier (A 1 ) and the curvature compensation module (2), and the source electrode of the first switching tube (M P1 ) is connected with a power supply; The collector of the first triode (Q 1 ), the base of the first triode (Q 1 ), the collector of the second triode (Q 2 ) and the base of the second triode (Q 2 ) are grounded together, the area ratio of the emitter of the first triode (Q 1 ) to the emitter of the second triode (Q 2 ) is 1:N, and N is a positive integer.
- 3. Bandgap reference voltage source according to claim 1, characterized in that the logic control module (3) comprises a gating unit (31) and a master control unit (32), the compensation switch comprising a gating switch and a master control switch (231); The gating unit (31) is connected with the gating switch and the master control unit (32), and the master control unit (32) is connected with the master control switch (231).
- 4. A bandgap reference voltage source according to claim 3, characterized in that the gating cell (31) comprises a low temperature comparator (CMP L ) and a high Wen Bijiao device (CMP H ), the gating switch comprising a low temperature switch (211) and a high temperature switch (221); The non-inverting input end of the low-temperature comparator (CMP L ) is connected with the curvature compensation module (2), the inverting input end of the low-temperature comparator (CMP L ) is connected with the negative temperature coefficient voltage, the output end of the low-temperature comparator (CMP L ) is connected with the low-temperature switch (211) to control the on-off of the low-temperature switch (211), the non-inverting input end of the high-temperature comparator (CMP H ) is connected with the negative temperature coefficient voltage, the inverting input end of the high-temperature comparator (CMP H ) is connected with the curvature compensation module (2), the output end of the high-temperature comparator (CMP H ) is connected with the high-temperature switch (221) to control the on-off of the high-temperature switch (221), the input end of the total control unit (32) is respectively connected with the output end of the low-temperature comparator (CMP L ) and the output end of the high-temperature comparator ( H ), and the output end of the total control unit (32) is connected with the total control switch (CMP 231).
- 5. The bandgap reference voltage source according to claim 4, characterized in that the curvature compensation module (2) comprises a low temperature compensation unit (21), a high temperature compensation unit (22) and a compensation control unit (23); The low-temperature compensation unit (21) is connected with the high-temperature compensation unit (22), the compensation control unit (23) and the low-temperature comparator (CMP L ), the high-temperature compensation unit (22) is connected with the compensation control unit (23) and the high-temperature comparator (CMP H ), and the compensation control unit (23) is connected with the total control unit (32).
- 6. The bandgap reference voltage source according to claim 5, characterized in that the low temperature compensation unit (21) comprises a second switching tube (M P2 ), a third switching tube (M P3 ), a fourth switching tube (M N4 ), a fifth switching tube (M N5 ) and the low temperature switch (211); The power supply is respectively connected with the source electrode of the second switching tube (M P2 ), the source electrode of the third switching tube (M P3 ) and the compensation control unit (23), and the high-temperature compensation unit (22) is connected with the grid electrode of the second switching tube (M P2 ), the grid electrode of the third switching tube (M P3 ), the compensation control unit (23) and the band gap reference core module (1); The source electrode of the fourth switching tube (M N4 ) is grounded, the source electrode of the fifth switching tube (M N5 ) is grounded, and the grid electrode of the fourth switching tube (M N4 ) is connected with the grid electrode of the fifth switching tube (M N5 ) and the drain electrode of the fifth switching tube (M N5 ); The drain electrode of the fourth switching tube (M N4 ) is connected with the drain electrode of the second switching tube (M P2 ) and the band gap reference core module (1) through the low-temperature switch (211), and the drain electrode of the fifth switching tube (M N5 ) is connected with the drain electrode of the third switching tube (M P3 ) through the low-temperature switch (211).
- 7. The bandgap reference voltage source according to claim 5, characterized in that the compensation control unit (23) comprises a first voltage dividing resistor (R P1 ), a second voltage dividing resistor (R P2 ), a sixth switching tube (M P6 ), a seventh switching tube (M P7 ), a fifth resistor (R 5 ), a second operational amplifier (a 2 ) and a master switch (231); The first voltage dividing resistor (R P1 ) is respectively connected with one end of the second voltage dividing resistor (R P2 ) and the drain electrode of the seventh switching tube (M P7 ), and the other end of the second voltage dividing resistor (R P2 ) is grounded; The source electrode of the sixth switching tube (M P6 ) is connected with a power supply, the grid electrode of the sixth switching tube (M P6 ) is connected with the output end of the second operational amplifier (A 2 ) and the low-temperature compensation unit (21), the drain electrode of the sixth switching tube (M P6 ) is grounded through the master control switch (231) and the fifth resistor (R 5 ), and the master control switch (231) is connected with the power supply end of the second operational amplifier (A 2 ); The source electrode of the seventh switching tube (M P7 ) is connected with a power supply, and the grid electrode of the seventh switching tube (M P7 ) is connected with the band gap reference core module (1), the low-temperature compensation unit (21) and the high-temperature compensation unit (22); The inverting input terminal of the second operational amplifier (A 2 ) is connected with negative temperature coefficient voltage, and the non-inverting input terminal of the second operational amplifier (A 2 ) is connected with the fifth resistor (R 5 ).
- 8. The bandgap reference voltage source according to claim 7, characterized in that the high temperature compensation unit (22) comprises an eighth switching tube (M P8 ), a ninth switching tube (M P9 ), a tenth switching tube (M N10 ), an eleventh switching tube (M N11 ) and the high temperature switch (221); the power supply is respectively connected with the source electrode of the eighth switching tube (M P8 ) and the source electrode of the ninth switching tube (M P9 ), and the compensation control unit (23) is connected with the grid electrode of the eighth switching tube (M P8 ), the grid electrode of the ninth switching tube (M P9 ), the band gap reference core module (1) and the low-temperature compensation unit (21); The source electrode of the tenth switching tube (M N10 ) is grounded, the source electrode of the eleventh switching tube (M N11 ) is grounded, and the grid electrode of the tenth switching tube (M N10 ) is connected with the grid electrode of the eleventh switching tube (M N11 ); The drain electrode of the eleventh switching tube (M N11 ) is connected with the drain electrode of the eighth switching tube (M P8 ) and the band gap reference core module (1) through the high-temperature switch (221), and the grid electrode of the tenth switching tube (M N10 ) is connected with the drain electrode of the ninth switching tube (M P9 ) through the high-temperature switch (221).
- 9. The bandgap reference voltage source according to claim 8, wherein said low temperature switch (211) comprises a first switch (S 1 ), a fourth switch (S 4 ), a sixth switch (S 6 ), said high temperature switch (221) comprises a second switch (S 2 ), a third switch (S 3 ), a fifth switch (S 5 ); The drain electrode of the fourth switch tube (M N4 ) is connected with the drain electrode of the second switch tube (M P2 ) and the band gap reference core module (1) through the fourth switch (S 4 ) and the first switch (S 1 ), and the drain electrode of the fifth switch tube (M N5 ) is connected with the drain electrode of the third switch tube (M P3 ) through the sixth switch (S 6 ); The drain electrode of the eleventh switch tube (M N11 ) is connected with the drain electrode of the eighth switch tube (M P8 ) and the band gap reference core module (1) through the third switch (S 3 ) and the second switch (S 2 ), and the grid electrode of the tenth switch tube (M N10 ) is connected with the drain electrode of the ninth switch tube (M P9 ) through the fifth switch (S 5 ).
- 10. The bandgap reference voltage source according to claim 8, characterized in that the master switch (231) comprises a seventh switch (S 7 ) and an eighth switch (S 8 ); The grid of sixth switch tube (M P6 ) with the output of second operational amplifier (A 2 ) is connected, the drain electrode of sixth switch tube (M P6 ) loops through seventh switch (S 7 ) fifth resistance (R 5 ) ground connection, eighth switch (S 8 ) with the power end of second operational amplifier (A 2 ) is connected.
Description
Band gap reference voltage source Technical Field The application belongs to the field of integrated circuits, and particularly relates to a band gap reference voltage source. Background The bandgap reference voltage source has the primary function of generating a reference voltage that is insensitive to temperature and supply voltage. The traditional first-order temperature compensation band-gap reference voltage source circuit is limited by high-order nonlinearity of the base-collector voltage of a BJT (Bipolar Junction Transistor, bipolar transistor) along with the temperature change, the temperature coefficient is often higher, and the temperature drift performance is difficult to meet the application scene of a battery management system, which has strict requirements on the temperature drift performance of the reference voltage. In the prior art, a current subtracting circuit is often used to subtract a PTAT (Proportional To Absolute Temperature, positive temperature coefficient) current from a CTAT (Complementary To Absolute Temperature, negative temperature coefficient) current or subtract the PTAT (Complementary To Absolute Temperature, negative temperature coefficient) current from a reference current to generate a segmented compensation current, the trend of the compensation current along with the temperature change is opposite to that of a first-order temperature curve, and the generated compensation current is injected into an output branch resistor of a band-gap reference circuit to perform segmented curvature compensation on the temperature curve of the band-gap reference, so that a band-gap reference output voltage with a lower temperature coefficient is obtained. However, when implementing multi-stage compensation, multiple sets of current-subtracting current mirrors are required to implement the corresponding compensation circuit, and the compensation circuit still consumes current in a temperature interval where the compensation circuit is not required to operate, which may result in increased power consumption. Therefore, it is important how to control the compensation circuit to be effective only in the compensation section to optimize the power consumption. Disclosure of Invention The embodiment of the application aims to provide a band-gap reference voltage source, which can solve the problem that the power consumption is too high due to the fact that a compensation circuit continuously consumes current in a non-compensation interval in the existing piecewise curvature compensation. In a first aspect, an embodiment of the present application provides a bandgap reference voltage source, including a bandgap reference core module, a curvature compensation module and a logic control module, where the curvature compensation module includes a plurality of compensation switches, the bandgap reference core module is connected with the curvature compensation module and the logic control module, and the logic control module is connected with the compensation switches; the band gap reference core module is used for generating a reference voltage, wherein the reference voltage comprises a negative temperature coefficient voltage; The logic control module determines a target compensation interval based on the negative temperature coefficient voltage and generates a switching signal for controlling whether the compensation switch is conducted or not according to the target compensation interval; The curvature compensation module generates compensation current when the compensation switch is conducted, the compensation current is input into the band-gap reference core module, the band-gap reference core module obtains compensation voltage according to the compensation current, the compensation voltage is overlapped with the reference voltage, and the target reference voltage is output. Optionally, the bandgap reference core module includes a first operational amplifier, a first resistor, a second resistor, a third resistor, a fourth resistor, a first triode, a second triode and a first switch tube; the positive input end of the first operational amplifier is respectively connected with the first resistor and the third resistor, and the negative input end of the first operational amplifier is respectively connected with the second resistor, the emitter of the first triode and the negative temperature coefficient voltage; The first resistor is connected with the emitter of the second triode, one end of the fourth resistor is respectively connected with the second resistor, the third resistor and the curvature compensation module, and the other end of the fourth resistor is sequentially connected with the target reference voltage and the drain of the first switching tube; The grid electrode of the first switching tube is connected with the output end of the first operational amplifier and the curvature compensation module, and the source electrode of the first switching tube is connected with a power su