CN-121979411-A - Photosensitive sensing touch structure and method thereof

CN121979411ACN 121979411 ACN121979411 ACN 121979411ACN-121979411-A

Abstract

The invention relates to the technical field of touch screens, in particular to a photosensitive induction touch structure and a method thereof. The photosensitive sensing touch structure comprises at least one photosensitive sensing layer, wherein the photosensitive sensing layer comprises a microprocessor and a plurality of transparent photosensitive device units, the photosensitive device units are arranged in an array, the X ends of the photosensitive device units are connected with a power VCC, the Y ends of the photosensitive device units are grounded, the X ends of the photosensitive device units positioned in the same row are connected in parallel, the Y ends of the photosensitive device units positioned in the same column are connected in parallel, each photosensitive device unit corresponds to a position mark, and the microprocessor is connected into the Y ends of the photosensitive device units and detects the change of electrical performance parameters of the photosensitive device units. According to the invention, through the array arrangement of the transparent photosensitive devices, the light beam irradiation at different positions can be captured, and the position of the light beam irradiation is accurately identified through the microprocessor, so that the remote touch positioning of a display picture is realized.

Inventors

XU YONGHENG

Assignees

深圳市泰霖科技有限公司

Dates

Publication Date: 20260505
Application Date: 20260123

Claims (9)

1. The utility model provides a photosensitive sensing touch structure, its characterized in that includes that at least one deck photosensitive sensing layer constitutes, photosensitive sensing layer includes microprocessor, a plurality of transparent photosensor unit, and a plurality of photosensor unit is the array and arranges, photosensor unit's X-terminal access power VCC, photosensor unit's Y-terminal ground connection, be located same line photosensor unit's X-terminal each other parallelly connected, be located same row photosensor unit's Y-terminal each other parallelly connected, every photosensor unit corresponds a position identification, microprocessor access photosensor unit's Y-terminal and detect photosensor unit's electrical property parameter variation.
2. The light-sensitive touch structure according to claim 1, wherein the light-sensitive device units comprise light-sensitive devices of colors corresponding to a plurality of different frequency bands, and each light-sensitive device unit is composed of one of the light-sensitive devices of colors corresponding to the plurality of different frequency bands or a plurality of parallel combinations.
3. The light-sensitive touch structure of claim 1 wherein the plurality of light-sensitive devices of different colors includes, but is not limited to, a red light-sensitive device, a yellow light-sensitive device, and a blue light-sensitive device.
4. A photosensitive touch method, implemented based on the photosensitive touch structure of any one of claims 1 to 3, comprising the steps of: s1, connecting X-side access power sources of a plurality of photosensitive device units arranged in an array manner in each photosensitive sensing layer; s2, the microprocessor is connected to the Y end of the photosensitive device unit, and electrical performance parameters of the Y end are scanned and detected; S3, according to the change of the electrical performance parameters of the Y end of the photosensor unit, confirming the change behavior of the light beam, wherein the change behavior comprises one or more of the following conditions: S31, confirming the position of the light beam irradiated to the photosensor unit according to the position of the photosensor unit with the change of the electrical performance parameter in the array; S32, confirming the intensity difference of the light beams according to the variation amplitude of the electrical performance parameter of a certain photosensor unit in the array; s33, confirming the diameter of the light beam according to the number of the photosensitive device units with the electrical performance parameters in the array; S34, confirming the frequency of the light beam according to the responses of the photosensitive devices of different color types in the same photosensitive device unit; S4, defining different picture operation behaviors according to different change behaviors of the light beam, forming a correlation between the change behaviors of the light beam, the change of the electrical performance parameters and the picture operation behaviors, and transmitting the correlation into a microprocessor; S5, when the photosensitive sensing layer receives the corresponding light beam change, the microprocessor outputs corresponding picture operation behaviors according to the change condition of the electrical performance parameters of the photosensitive device unit, and the picture is controlled.
5. The method according to claim 4, wherein the step S31 specifically includes: The microprocessor acquires an initial voltage/current value of each photosensor unit in the array, monitors the voltage/current value of each photosensor unit in real time, and acquires a position mark of one photosensor unit when the monitored voltage/current value of the photosensor unit is larger than the initial voltage/current value, and positions the position mark to serve as an irradiation position of a light beam.
6. The method according to claim 4, wherein the step S32 specifically includes: The microprocessor acquires an initial voltage/current value of each photosensor unit in the array, monitors the voltage/current value of each photosensor unit in real time, acquires a position identifier of one photosensor unit when the monitored first voltage/current value of the photosensor unit is larger than the initial voltage/current value, continuously monitors the voltage/current value of the photosensor unit, confirms that the intensity of the light beam is enhanced if the monitored second voltage/current value is larger than the first voltage/current value after the specified time, and confirms that the intensity of the light beam is reduced if the monitored second voltage/current value is smaller than the first voltage/current value after the specified time.
7. The method according to claim 4, wherein the step S33 specifically includes: the microprocessor acquires an initial voltage/current value of each photosensor unit in the array, monitors the voltage/current value of each photosensor unit in real time, acquires a position mark of each photosensor unit when the monitored voltage/current value of each photosensor unit is larger than the initial voltage/current value, counts the number of adjacent photosensor units with changed voltage/current values, confirms the beam diameter according to the number of adjacent photosensor units with changed voltage/current values, and if the number of adjacent photosensor units with changed voltage/current values is larger, the beam diameter is larger, and if the number of adjacent photosensor units with changed voltage/current values is smaller, the beam diameter is smaller.
8. The photosensitive touch method according to claim 4, wherein the step S34 specifically comprises: The microprocessor acquires the initial voltage/current values of the red light photosensitive device, the yellow light photosensitive device and the blue light photosensitive device in each photosensitive device unit, monitors the voltage/current values of the red light photosensitive device, the yellow light photosensitive device and the blue light photosensitive device in real time, and if the monitored voltage/current values of the red light photosensitive device are larger than the initial voltage/current values, the beam frequency is in the red light frequency range, if the monitored voltage/current values of the yellow light photosensitive device are larger than the initial voltage/current values, the beam frequency is in the yellow light frequency range, and if the monitored voltage/current values of the blue light photosensitive device are larger than the initial voltage/current values, the beam frequency is in the blue light frequency range.
9. The photosensitive sensing touch method according to claim 4, wherein the step S4 specifically comprises: s41, setting a first picture operation behavior, a second picture operation behavior, a third picture operation behavior and a fourth picture operation behavior; S42, defining the behavior of the photosensor unit in S31, which is changed in electrical performance parameter, as a first picture operation behavior, and establishing an association relation between the beam position change behavior and the electrical performance parameter change behavior of the photosensor unit and the first picture operation behavior; S43, defining the behavior of the variation amplitude of the electrical performance parameters of the photosensor unit in S32 as a second picture operation behavior, and establishing a correlation between the behavior of the intensity variation of the light beam and the variation amplitude of the electrical performance parameters of the photosensor unit and the second picture operation behavior; S44, defining the number change behavior of the photosensitive device units with the electrical performance parameters changed in the S33 as a third picture operation behavior, and establishing an association relation between the beam diameter change behavior and the number change behavior of the photosensitive device units and the third picture operation behavior; S45, defining response behaviors of the photosensitive devices with different color types in S34 as fourth picture operation behaviors, and establishing association relations between frequency confirmation behaviors of light beams, response behaviors of the photosensitive devices with different color types and fourth picture operation behaviors.

Description

Photosensitive sensing touch structure and method thereof Technical Field The invention relates to the technical field of touch screens, in particular to a photosensitive induction touch structure and a method thereof. Background The existing touch screen technology is mainly used for meeting short-distance touch operation no matter a capacitive touch screen or a resistive touch screen, and for the existing large-screen picture, the touch operation has the limitations of the operation range and the scene, so that the man-machine interaction mode of the remote touch operation is difficult to meet. Disclosure of Invention The invention provides a photosensitive induction touch structure and a method thereof, which aim to solve the problem that the limitation of the traditional touch screen technology is difficult to remotely control the touch operation. The invention provides a photosensitive sensing touch structure, which comprises at least one photosensitive sensing layer, wherein the photosensitive sensing layer comprises a microprocessor and a plurality of transparent photosensitive device units, the photosensitive device units are arranged in an array, the X ends of the photosensitive device units are connected with a power supply VCC, the Y ends of the photosensitive device units are grounded, the X ends of the photosensitive device units positioned in the same row are connected in parallel, the Y ends of the photosensitive device units positioned in the same column are connected in parallel, each photosensitive device unit corresponds to a position identifier, and the microprocessor is connected into the Y end of the photosensitive device unit and detects the change of an electrical property parameter of the photosensitive device unit. As a further improvement of the invention, the photosensor unit comprises a plurality of photosensors of different colors of light, each photosensor unit being constituted by one or a plurality of parallel combinations of the photosensors of different colors of light. As a further improvement of the present invention, the light-sensitive devices of a plurality of different colors include, but are not limited to, red light-sensitive devices, yellow light-sensitive devices, blue light-sensitive devices. The invention also provides a photosensitive touch method based on the photosensitive touch structure implementation, which comprises the following steps: s1, connecting X-side access power sources of a plurality of photosensitive device units arranged in an array manner in each photosensitive sensing layer; s2, the microprocessor is connected to the Y end of the photosensitive device unit, and electrical performance parameters of the Y end are scanned and detected; S3, according to the change of the electrical performance parameters of the Y end of the photosensor unit, confirming the change behavior of the light beam, wherein the change behavior comprises one or more of the following conditions: S31, confirming the position of the light beam irradiated to the photosensor unit according to the position of the photosensor unit with the change of the electrical performance parameter in the array; S32, confirming the intensity difference of the light beams according to the variation amplitude of the electrical performance parameter of a certain photosensor unit in the array; s33, confirming the diameter of the light beam according to the number of the photosensitive device units with the electrical performance parameters in the array; S34, confirming the frequency of the light beam according to the responses of the photosensitive devices of different color types in the same photosensitive device unit; S4, defining different picture operation behaviors according to different change behaviors of the light beam, forming a correlation between the change behaviors of the light beam, the change of the electrical performance parameters and the picture operation behaviors, and transmitting the correlation into a microprocessor; S5, when the photosensitive sensing layer receives the corresponding light beam change, the microprocessor outputs corresponding picture operation behaviors according to the change condition of the electrical performance parameters of the photosensitive device unit, and the picture is controlled. As a further improvement of the present invention, the step S31 specifically includes: The microprocessor acquires an initial voltage/current value of each photosensor unit in the array, monitors the voltage/current value of each photosensor unit in real time, and acquires a position mark of one photosensor unit when the monitored voltage/current value of the photosensor unit is larger than the initial voltage/current value, and positions the position mark to serve as an irradiation position of a light beam. As a further improvement of the present invention, the step S32 specifically includes: The microprocessor acquires an initial voltage/current value of each photos