CN-121980274-A - Ion implanter parameter generation and adjustment method and device and electronic equipment

CN121980274ACN 121980274 ACN121980274 ACN 121980274ACN-121980274-A

Abstract

The invention provides a method, a device and electronic equipment for generating and adjusting parameters of an ion implanter, which comprise the steps of acquiring training adjustment data, adopting the training adjustment data to generate a target state prediction model, determining target operation indicated by a target operation response instruction when the target operation response instruction is detected, responding the target operation through the target state prediction model to obtain target operation response data, wherein the target operation support is used for realizing a forward state prediction function and a reverse parameter searching function, the forward state prediction function is used for predicting the state information, the reverse parameter searching function is used for searching for target ion implanter parameter combinations meeting target requirements, and the target operation response data is used for guiding the ion implanter parameter adjustment. The embodiment of the invention can conveniently adjust the parameters of the ion implanter so as to effectively reduce the adjustment time consumption.

Inventors

SHI CHANG
HU HAIXIN
ZHANG YUZHAO
ZHANG CONG
TIAN LONG
MA GUOYU
LI CHENRAN

Assignees

青岛思锐智能科技股份有限公司

Dates

Publication Date: 20260505
Application Date: 20260402

Claims (8)

1. A method for generating and adjusting parameters of an ion implanter, comprising: Acquiring training adjustment data, wherein the training adjustment data comprises adjustment acquisition data of a target ion implanter at a plurality of historical acquisition moments, the adjustment acquisition data at one historical acquisition moment comprises ion implanter parameter combinations and label state information at the corresponding historical acquisition moment, and one label information comprises at least one of extraction current and a Faraday value of a mass analyzer; Generating a target state prediction model by adopting the training adjustment data, wherein the target state prediction model supports the state information under the condition of predicting any ion implanter parameter combination; when a target operation response instruction is detected, determining target operation indicated by the target operation response instruction, and responding to the target operation through the target state prediction model to obtain target operation response data, wherein the target operation support is used for realizing a forward state prediction function and a reverse parameter searching function, the forward state prediction function is used for predicting state information, the reverse parameter searching function is used for searching a target ion implanter parameter combination meeting target requirements, and the target operation response data is used for guiding ion implanter parameter adjustment; If the target operation includes a forward state prediction operation, the forward state prediction operation is supported to implement the forward state prediction function, the responding to the target operation by the target state prediction model to obtain target operation response data includes: determining a combination of parameters of the ion implanter to be evaluated indicated by the target operation; Invoking the target state prediction model to predict state information under the parameter combination of the ion implanter to be evaluated; Adding the state information under the parameter combination of the ion implanter to be evaluated into target operation response data; If the target operation includes a reverse seek operation, the reverse seek operation is supported for implementing the reverse seek function, the responding to the target operation by the target state prediction model to obtain target operation response data includes: determining target optimizing indication information indicated by the target operation, and determining the target requirement according to the target optimizing indication information; Determining an objective function based on the objective requirement, and determining the objective ion implanter parameter combination through the objective function, the objective state prediction model and an objective intelligent optimization algorithm, wherein the objective state prediction model supports state information under any parameter individual; and combining the target ion implanter parameters and adding the target ion implanter parameters to target operation response data.
2. The method of claim 1, wherein the determining the target requirement from the target optimization indication information comprises: When the target optimizing indication information is a target extraction current, determining a current deviation minimization requirement based on the target extraction current, and taking the current deviation minimization requirement as the target requirement, wherein the current deviation minimization requirement comprises a deviation minimization requirement and/or a mass analyzer Faraday value maximization requirement between a predicted extraction current and the target extraction current; And when the target optimizing indication information is a target mass analyzer Faraday value, determining a mass analyzer Faraday value deviation minimization requirement based on the target mass analyzer Faraday value, and taking the mass analyzer Faraday value deviation minimization requirement as the target requirement, wherein the mass analyzer Faraday value deviation minimization requirement comprises a predicted mass analyzer Faraday value deviation minimization requirement and/or an extraction current minimization requirement.
3. The method of claim 2, wherein the determining an objective function based on the objective requirement comprises: When the target demand is the current deviation minimization demand, taking a current deviation minimization function as an objective function, wherein the current deviation minimization function comprises a current deviation term and/or a Faraday value term of a mass analyzer; When the target requirement is the mass analyzer faraday deviation minimization requirement, taking a mass analyzer faraday deviation minimization function as the target function, wherein the mass analyzer faraday deviation minimization function comprises a mass analyzer faraday deviation term and/or a drawn current term; Wherein the objective function further comprises at least one penalty term and penalty factors corresponding to each penalty term in the at least one penalty term, the at least one penalty term being constructed based on at least one constraint condition.
4. A method according to any one of claims 1-3, wherein the method further comprises: displaying a function setting interface, wherein the function setting interface supports a user to select the forward state prediction function and/or the reverse parameter searching function; And determining that the target operation response instruction is detected when the target operation is detected by the function setting interface, wherein the target operation is provided with an ion implanter parameter combination to be evaluated when the target operation is used for realizing the forward state prediction function, and the target operation is provided with target optimizing instruction information when the target operation is used for realizing the reverse parameter searching function.
5. A method according to any one of claims 1-3, wherein an adjustment acquisition data is acquired by a parameter scanning module in the target ion implanter, the parameter scanning module supporting beam stabilization after waiting for parameter adjustment to invoke a data acquisition interface to record adjustment acquisition data after beam stabilization, the acquiring training adjustment data comprising: Training adjustment data is obtained from the target ion implanter.
6. An ion implanter parameter generating and adjusting apparatus, the apparatus comprising: The acquisition unit is used for acquiring training adjustment data, wherein the training adjustment data comprise adjustment acquisition data of a target ion implanter at a plurality of historical acquisition moments, the adjustment acquisition data at one historical acquisition moment comprise ion implanter parameter combinations and label state information at the corresponding historical acquisition moment, and one label information comprises at least one of extraction current and a Faraday value of a mass analyzer; The processing unit is used for generating a target state prediction model by adopting the training adjustment data, and the target state prediction model supports the state information under the condition of predicting any ion implanter parameter combination; The processing unit is further used for determining target operation indicated by the target operation response instruction when the target operation response instruction is detected, and responding to the target operation through the target state prediction model to obtain target operation response data, wherein the target operation support is used for realizing a forward state prediction function and a reverse parameter searching function, the forward state prediction function is used for predicting state information, the reverse parameter searching function is used for searching a target ion implanter parameter combination meeting target requirements, and the target operation response data is used for guiding ion implanter parameter adjustment; If the target operation includes a forward state prediction operation, where the forward state prediction operation support is used to implement the forward state prediction function, the processing unit is specifically configured to, when responding to the target operation through the target state prediction model to obtain target operation response data: determining a combination of parameters of the ion implanter to be evaluated indicated by the target operation; Invoking the target state prediction model to predict state information under the parameter combination of the ion implanter to be evaluated; Adding the state information under the parameter combination of the ion implanter to be evaluated into target operation response data; If the target operation includes a reverse seek operation, where the reverse seek operation support is used to implement the reverse seek function, the processing unit is specifically configured to, when responding to the target operation by using the target state prediction model to obtain target operation response data: determining target optimizing indication information indicated by the target operation, and determining the target requirement according to the target optimizing indication information; Determining an objective function based on the objective requirement, and determining the objective ion implanter parameter combination through the objective function, the objective state prediction model and an objective intelligent optimization algorithm, wherein the objective state prediction model supports state information under any parameter individual; and combining the target ion implanter parameters and adding the target ion implanter parameters to target operation response data.
7. An electronic device, comprising: processor, and A memory in which a program is stored, Wherein the program comprises instructions which, when executed by the processor, cause the processor to perform the method according to any of claims 1-5.
8. A non-transitory computer readable storage medium storing computer instructions for causing a computer to perform the method of any one of claims 1-5.

Description

Ion implanter parameter generation and adjustment method and device and electronic equipment Technical Field The present invention relates to the field of semiconductor technologies, and in particular, to a method and an apparatus for generating and adjusting parameters of an ion implanter, and an electronic device. Background Currently, in the semiconductor manufacturing process, an ion implantation process is a key step for regulating and controlling the doping concentration, junction depth and electrical characteristics of a device, and an ion implanter is used as core equipment for executing the process, and needs to be capable of stably generating and controlling ion beams with specific energy and beam current with a certain size so as to meet the requirements of the process on dosage, energy and uniformity. The overall structure of an ion implanter generally includes an ion source, a beam line transport system, an acceleration structure, and a beam injection region, wherein the ion source region for generating an ion beam is the starting point of the apparatus, and the size of the beam current generated thereby, extraction efficiency, and stability have an important impact on process quality. In practical application, an initial parameter combination of an ion implanter is generally required to be set, and manual parameter adjustment is continued until the parameter combination meeting the requirement is obtained according to actual beam feedback, so that the operation is complicated and the adjustment time is long. Based on this, how to conveniently adjust the parameters of the ion implanter to effectively reduce the adjustment time consumption has not had a better solution at present. Disclosure of Invention In view of the above, the embodiment of the invention provides a method, a device and an electronic device for generating and adjusting parameters of an ion implanter, so as to solve the problems of complicated operation and long adjustment time consumption when the ion implanter parameters are adjusted in the related technology, that is, the embodiment of the invention can respond to the target operation through the target state prediction model to realize the forward state prediction function and the backward parameter searching function, so that the ion implanter parameters can be guided to be adjusted through the target operation response data, specifically, the ion implanter parameters can be adjusted through the state information indicated by the target operation response data when the target operation support is used for realizing the forward state prediction function, and the ion implanter parameters can be determined through the target ion implanter parameter combination indicated by the target operation response data when the target operation support is used for realizing the backward parameter searching function. According to an aspect of an embodiment of the present invention, there is provided a method for generating and adjusting parameters of an ion implanter, the method including: Acquiring training adjustment data, wherein the training adjustment data comprises adjustment acquisition data of a target ion implanter at a plurality of historical acquisition moments, the adjustment acquisition data at one historical acquisition moment comprises ion implanter parameter combinations and label state information at the corresponding historical acquisition moment, and one label information comprises at least one of extraction current and a Faraday value of a mass analyzer; Generating a target state prediction model by adopting the training adjustment data, wherein the target state prediction model supports the state information under the condition of predicting any ion implanter parameter combination; when a target operation response instruction is detected, determining target operation indicated by the target operation response instruction, and responding to the target operation through the target state prediction model to obtain target operation response data, wherein the target operation support is used for realizing a forward state prediction function and a reverse parameter searching function, the forward state prediction function is used for predicting state information, the reverse parameter searching function is used for searching a target ion implanter parameter combination meeting target requirements, and the target operation response data is used for guiding ion implanter parameter adjustment; If the target operation includes a forward state prediction operation, the forward state prediction operation is supported to implement the forward state prediction function, the responding to the target operation by the target state prediction model to obtain target operation response data includes: determining a combination of parameters of the ion implanter to be evaluated indicated by the target operation; Invoking the target state prediction model to predict state information under