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CN-121980774-A - Method for estimating on-orbit failure probability of single-particle hard error of wide-bandgap semiconductor device

CN121980774ACN 121980774 ACN121980774 ACN 121980774ACN-121980774-A

Abstract

The invention discloses an on-orbit failure probability prediction method for single-particle hard errors of a wide-bandgap semiconductor device, which aims to support on-orbit prediction of the single-particle hard error failure probability of the wide-bandgap semiconductor device. The wide forbidden band semiconductor devices such as silicon carbide (SiC), gallium nitride (GaN) and the like are easy to generate single particle burnout, single particle gate penetration and other hard errors under high-energy particle radiation, and aerospace application needs to comprehensively estimate the occurrence risk of the hard errors. Therefore, the method for estimating the on-orbit failure probability of the single-particle hard error of the wide-bandgap semiconductor device is provided, which considers the influence of the failure section angle and the particle distribution characteristics under different track environments, and provides data support for model selection.

Inventors

  • CAO SHUANG
  • YU QINGKUI
  • YUAN QIFEI
  • MEI BO
  • SUN YI

Assignees

  • 中国空间技术研究院

Dates

Publication Date
20260505
Application Date
20251231

Claims (9)

  1. 1. An on-orbit failure probability prediction method for single particle hard errors of a wide bandgap semiconductor device is characterized by comprising the following steps: calculating a vertical incidence single particle hard error failure section according to a relationship curve of the threshold voltage of the single particle hard error of the device and the LET; calculating a single particle hard error direction section by adopting three schemes of isotropy, cosine law and hierarchical division; according to the directional sections obtained by the three schemes, calculating the single particle average failure section in the on-orbit space direction; and estimating the single particle hard error failure probability based on the average failure interval time according to the total flux of the space particles and the single particle average failure section in the whole space direction.
  2. 2. The method of claim 1, wherein the vertical incidence single particle hard error failure section The formula is as follows: Wherein Y is a grid section (cm 2 ), X is a device section (cm 2 ), L is a linear energy transmission LET (MeV X cm 2 /mg), a is a LET threshold corresponding to a device SEE saturation section, b is a LET threshold corresponding to a device SEE grid section, and LETth is a minimum threshold without SEE phenomenon.
  3. 3. The method of claim 1, wherein the isotropy scheme considers the failure cross-section of the device not to decrease with increasing angle of incidence, the failure cross-section in all directions being equivalent to that at normal incidence.
  4. 4. The method of claim 1, wherein the cosine law solution considers that the threshold LET of a single particle hard error generally decreases with increasing angle, and the direction cross section assumes the projection of a flat area onto the device plane, i.e., the particle trajectory direction.
  5. 5. The method according to claim 4, wherein the directional cross section is: Wherein the method comprises the steps of Is a single particle failure section at normal incidence, Is the angle of incidence.
  6. 6. The method of claim 1, wherein the classification scheme considers that single particle hard errors are most likely to occur in a direction with as small an incidence angle as possible, assuming that the angle effect is isotropic within 15 degrees of incidence, and conservatively considering the failure cross section to be 0.01 times of normal incidence outside 15 degrees.
  7. 7. The method according to claim 6, wherein: The formula of the directional section is The directional effect function is: Is a single particle failure section at normal incidence, Is the angle of incidence.
  8. 8. The method of claim 1, wherein the single particle mean failure cross-section in the in-orbit spatial direction is calculated by the formula: is a cross section in the direction of the plane, Is the angle of incidence.
  9. 9. The method of claim 1, wherein the single particle hard error failure probability calculation formula is: a spectral flux of particles is radiated for a space under a certain LET; is the single particle average failure section in the space direction of the orbit at a certain LET.

Description

Method for estimating on-orbit failure probability of single-particle hard error of wide-bandgap semiconductor device Technical Field The invention relates to a single particle hard error on-orbit failure probability prediction method for a wide band gap semiconductor device, and belongs to the technical field of evaluation of anti-radiation capability of aerospace components. Background The new generation of semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN) and the like show unique advantages in the aspects of high temperature and high pressure resistance, low self power consumption and the like by virtue of excellent material characteristics such as wide forbidden band, high critical electric field, high thermal conductivity and the like. Becomes an important key device for planning and selecting a new generation of spacecraft power supply, electric propulsion and other systems. However, the ground test evaluation results show that the wide bandgap semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) are prone to hard errors such as single particle burnout (SINGLE EVENT Burnout, SEB) and single particle gate penetration (SINGLE EVENT GATE Rupture, SEGR) under the irradiation of high-energy particles. The tolerance of aerospace application to single-particle hard errors is low, and the on-orbit failure probability estimated evaluation of the single-particle hard errors of the wide-bandgap semiconductor device becomes an indispensable link of aerospace application. The invention provides a method for estimating the single-particle hard error on-orbit failure probability of a wide-bandgap semiconductor device, which is used for solving the problem by taking the influence of the angle of a failure section and the particle distribution characteristics under different track environments into consideration. Disclosure of Invention The invention solves the technical problem that the method for estimating the on-orbit failure probability of the single-particle hard error of the wide-bandgap semiconductor device can support the on-orbit estimation of the single-particle hard error of the wide-bandgap semiconductor device. The invention solves the technical scheme that the method for estimating the on-orbit failure probability of the single particle hard error of the wide bandgap semiconductor device comprises the following steps: calculating a vertical incidence single particle hard error failure section according to a relationship curve of the threshold voltage of the single particle hard error of the device and the LET; calculating a single particle hard error direction section by adopting three schemes of isotropy, cosine law and hierarchical division; according to the directional sections obtained by the three schemes, calculating the single particle average failure section in the on-orbit space direction; and estimating the single particle hard error failure probability based on the average failure interval time according to the total flux of the space particles and the single particle average failure section in the whole space direction. Preferably, normal incidence single particle hard error failure cross sectionThe formula is as follows: Wherein Y is a grid section (cm 2), X is a device section (cm 2), L is a linear energy transmission LET (MeV X cm 2/mg), a is a LET threshold corresponding to a device SEE saturation section, b is a LET threshold corresponding to a device SEE grid section, and LETth is a minimum threshold without SEE phenomenon. Preferably, the isotropic approach considers that the failure cross section of the device does not decrease with increasing angle of incidence, and the failure cross section in all directions is equivalent to that at normal incidence. Preferably, the cosine law solution considers that the threshold LET of single particle hard errors is generally the decrease of the directional cross section with increasing angle, which is assumed to be the projection of a flat area onto the device plane, i.e. the particle trajectory direction. Preferably, the directional cross section is: Wherein the method comprises the steps of Is a single particle failure section at normal incidence,Is the angle of incidence. Preferably, the hierarchical partitioning scheme considers that single particle hard errors are most likely to occur in a direction where the incident angle is as small as possible, assuming that the internal angle effect is isotropic within 15 ° and that the failure section is conservatively considered 0.01 times the normal incidence outside 15 °. Preferably, the directional cross-section formula is The directional effect function is: Is a single particle failure section at normal incidence, Is the angle of incidence. Preferably, the single particle average failure section calculation formula in the in-orbit space direction is as follows: is a cross section in the direction of the plane, Is the angle of incidence. Preferab