CN-121981042-A - Ka-band bidirectional amplifier chip circuit

CN121981042ACN 121981042 ACN121981042 ACN 121981042ACN-121981042-A

Abstract

The invention discloses a Ka-band bidirectional amplifier chip circuit. The circuit comprises a radio frequency switch circuit model, a low noise amplifier circuit model and a power amplifier circuit model, wherein the radio frequency switch circuit is provided with an input port and two output ports which are respectively connected to the input ends of the low noise amplifier and the power amplifier, and the half-duplex communication is realized by switching a receiving mode and a transmitting mode through control signals. The radio frequency switch circuit adopts an asymmetric MOS stacked series-parallel structure, low insertion loss and high isolation are realized through parallel inductors and short circuit branches, the low-noise amplifier adopts a three-level inductor distributed structure, negative feedback is realized through series connection of inductors at a source electrode, and the power amplifier adopts a two-level high-power Casode structure. The invention establishes the element-level model based on the circuit physical working mechanism, can accurately represent the linear/nonlinear electrical performance of the receiving and transmitting system, obviously improves the simulation efficiency, and provides effective simulation preconditions for a large-scale complex network system.

Inventors

LI XIAO
WANG JING
QI XIAOLIN
LIU JUN
SU GUODONG
CUI JINGYU
Shan Yuanhao

Assignees

中国电子科技集团公司信息科学研究院
杭州电子科技大学

Dates

Publication Date: 20260505
Application Date: 20251205

Claims (10)

1. The Ka-band bidirectional amplifier chip circuit is characterized by comprising a radio frequency switch circuit model, a low-noise amplifier circuit model and a power amplifier circuit model; The radio frequency switch circuit model is provided with an input port and two output ports, the input port is used for receiving radio frequency signals, and the two output ports are respectively connected to the input end of the low-noise amplifier circuit model and the input end of the power amplifier circuit model; the output end of the low-noise amplifier circuit model is used as the output of a receiving link and used for outputting amplified receiving signals; the output end of the power amplifier circuit model is used as the output of a transmitting link and used for outputting an amplified transmitting signal; the radio frequency switch circuit model is used for controlling the on-off of the receiving link and the transmitting link and preventing high-power signals of the transmitting link from leaking to the receiving link.
2. The Ka-band bi-directional amplifier chip circuit of claim 1, wherein the radio frequency switching circuit model adopts an asymmetric MOS stacked series-parallel switching structure comprising series-parallel branches that are shorted to ground through parallel branches and that are connected in parallel with an inductance between MOS source and drain to offset the effects of MOS parasitic capacitance, achieving low insertion loss and high isolation.
3. The Ka-band bi-directional amplifier chip circuit of claim 1, wherein the low noise amplifier circuit model adopts a three-stage inductor distributed structure, negative feedback is realized by connecting inductors in series at the source, conjugate matching is completed at the input end, and power matching is completed at the output end.
4. The Ka-band bi-directional amplifier chip circuit of claim 1, wherein the power amplifier circuit model employs a two-stage high power Cascode structure, the first stage employs one Cascode structure, the second stage employs two Cascode structures, the input end completes conjugate matching, and the output end completes power matching.
5. A Ka-band bidirectional amplifier chip circuit control method applied to the Ka-band bidirectional amplifier chip circuit according to any one of claims 1 to 4, comprising: Switching a receiving mode and a transmitting mode by controlling the switching state of the radio frequency switching circuit model; in a receiving mode, controlling the radio frequency switch to enable the input port to be connected to the low-noise amplifier circuit model and disconnect the power amplifier circuit model; in a transmitting mode, controlling the radio frequency switch to enable the input port to be connected to the power amplifier circuit model and disconnect the low-noise amplifier circuit model; Thereby realizing half duplex communication and preventing leakage of high-power signals of the transmitting link to the receiving link.
6. The control method of claim 5, wherein the RF switch circuit model has two control signals VD1 and VD2, and when VD1 is high and VD2 is low, the RF switch connects the input port to the power amplifier circuit model, and the transmitting mode is turned on, and when VD1 is low and VD2 is high, the RF switch connects the input port to the low noise amplifier circuit model, and the receiving mode is turned on.
7. The control method according to claim 5, characterized in that the control method is constructed by a minimum function unit circuit model including a radio frequency switch circuit model, a low noise amplifier circuit model, and a power amplifier circuit model.
8. The control method according to claim 5, wherein the control method is applicable to a Ka band of 30-40GHz.
9. A phased array radar system comprising the Ka-band bi-directional amplifier chip circuit of any one of claims 1-4.
10. The phased array radar system of claim 9, wherein the phased array radar system employs a plurality of the Ka-band bi-directional amplifier chip circuits to form a transceiver array to reduce chip area and increase integration.

Description

Ka-band bidirectional amplifier chip circuit Technical Field The invention relates to the field of microwave integrated circuit systems, in particular to a bidirectional amplifying chip circuit. Background In recent years, the circuit complexity of phased array radar systems has continuously increased, and the use of separate transmitter and receiver arrays in their monolithic integrated circuits (MMICs) can take up excessive chip area. Therefore, a bidirectional amplifier integrating the amplifying capability of a switch and a receiving and transmitting channel is gradually becoming a research hot spot for phased array system integration. However, as circuit scale continues to expand and integration levels increase, most of the existing circuit simulation tools face severe limitations in terms of memory resources and computation time, and it is difficult to efficiently support modeling, analyzing and designing large networks or systems containing such high-integration integrated circuits. In particular, the simulation of large-scale, high-integration circuits generally requires the consumption of substantial computational resources, resulting in significantly longer simulation times, especially as the circuit scale increases or nonlinear components are involved. Furthermore, the simulation results rely on standardized component models, which may themselves have accuracy limitations, resulting in deviations between the simulation results and the actual test data. Disclosure of Invention In order to solve the problem that the traditional circuit model cannot complete analysis and design of a large-scale network or a system of an integrated circuit under the condition of limited storage space and calculation time, an accurate bidirectional amplifying circuit model is established, and the invention provides a Ka-band bidirectional amplifier chip circuit which has the technical scheme that the circuit is characterized by comprising a radio frequency switch circuit model, a low-noise amplifier circuit model and a power amplifier circuit model; The radio frequency switch circuit model is provided with an input port and two output ports, the input port is used for receiving radio frequency signals, and the two output ports are respectively connected to the input end of the low-noise amplifier circuit model and the input end of the power amplifier circuit model; the output end of the low-noise amplifier circuit model is used as the output of a receiving link and used for outputting amplified receiving signals; the output end of the power amplifier circuit model is used as the output of a transmitting link and used for outputting an amplified transmitting signal; the radio frequency switch circuit model is used for controlling the on-off of the receiving link and the transmitting link and preventing high-power signals of the transmitting link from leaking to the receiving link. Preferably, the radio frequency switch circuit model adopts an asymmetric MOS stacked series-parallel switch structure, and comprises series-parallel branches, wherein the series-parallel branches are short-circuited to the ground through the parallel branches, and inductance is connected in parallel between MOS source and drain to offset the influence of MOS parasitic capacitance, so that low insertion loss and high isolation are realized. Preferably, the low noise amplifier circuit model adopts a three-stage inductance distributed structure, negative feedback is realized by connecting inductors in series at the source electrode, conjugate matching is completed at the input end, and power matching is completed at the output end. Preferably, the power amplifier circuit model adopts a two-stage high-power Cascode structure, the first stage uses one Cascode structure, the second stage uses two Cascode structures, the input end completes conjugate matching, and the output end completes power matching. The invention also discloses a control method of the Ka-band bidirectional amplifier chip circuit, which is applied to the Ka-band bidirectional amplifier chip circuit and is characterized by comprising the following steps: Switching a receiving mode and a transmitting mode by controlling the switching state of the radio frequency switching circuit model; in a receiving mode, controlling the radio frequency switch to enable the input port to be connected to the low-noise amplifier circuit model and disconnect the power amplifier circuit model; in a transmitting mode, controlling the radio frequency switch to enable the input port to be connected to the power amplifier circuit model and disconnect the low-noise amplifier circuit model; Thereby realizing half duplex communication and preventing leakage of high-power signals of the transmitting link to the receiving link. Preferably, the radio frequency switch circuit model has two control signals VD1 and VD2, when VD1 is high level and VD2 is low level, the radio frequency switch connects the input p