CN-121981045-A - High-bandwidth microcavity modulator electro-optical co-optimization design method based on inductance peaking effect and high-bandwidth microcavity modulator

CN121981045ACN 121981045 ACN121981045 ACN 121981045ACN-121981045-A

Abstract

The invention relates to a microcavity modulator and a design method thereof, in particular to an electro-optical co-optimization design method of a high-bandwidth microcavity modulator based on an inductance peaking effect and the high-bandwidth microcavity modulator, which solve the technical problem that the inductance peaking effect is not combined with the photoelectric characteristic of the microcavity modulator in the existing design method of the microcavity modulator, so that the effective peaking effect and the effective bandwidth expansion of the microcavity modulator are difficult to realize simultaneously. The micro-cavity modulator is equivalent to an optical equivalent circuit model, so that the micro-cavity modulator and the inductor can be designed in the same simulation environment, the integral co-optimization of an electric device and an optical device is realized, and meanwhile, the dual purposes of bandwidth expansion and group Shi Yanping adjustment of the micro-cavity modulator are realized through the deep coupling of the inductance peaking effect and the optical equivalent circuit model of the micro-cavity modulator.

Inventors

WANG BINHAO
Bao Shenlei
YANG YIHAO
ZHANG WENFU

Assignees

中国科学院西安光学精密机械研究所

Dates

Publication Date: 20260505
Application Date: 20251223

Claims (10)

1. The electro-optical co-optimization design method for the high-bandwidth microcavity modulator based on the inductance peaking effect is characterized by comprising the following steps of: Step 1, designing a micro-cavity modulator, determining the structure and parameters of the micro-cavity modulator, connecting an inductor on the micro-cavity modulator, and determining the structure of the inductor according to the structure of the micro-cavity modulator and the bandwidth of the micro-cavity modulator required by the design, wherein one end of the inductor is used for inputting a modulation signal, the other end of the inductor is connected with the control input end of the micro-cavity modulator, the input end of the micro-cavity modulator is used for receiving an optical signal, and the output end of the micro-cavity modulator is used for outputting a modulated optical signal; step 2, constructing an initial optical equivalent circuit model of the microcavity modulator according to the structure of the microcavity modulator; step 3, performing photoelectric response test on the microcavity modulator, and then fitting parameters of an initial optical equivalent circuit model according to a photoelectric response test result to obtain the optical equivalent circuit model of the microcavity modulator; And 4, inputting an optical equivalent circuit model of the micro-cavity modulator and the architecture of the inductor into the same simulation environment, and adjusting the inductance value and the Q value of the inductor according to the bandwidth of the micro-cavity modulator required by design, so that the group delay influence of the inductance peaking effect in the working frequency range of the micro-cavity modulator is minimized, the group delay response of the inductance peaking effect in the working frequency range of the micro-cavity modulator is stable, and the design of the high-bandwidth micro-cavity modulator is completed.
2. The electro-optical co-optimization design method of the high-bandwidth microcavity modulator based on the inductance peaking effect of claim 1 is characterized in that in the step 2, an initial optical equivalent circuit model of the microcavity modulator comprises an electrical characteristic equivalent model and an optical characteristic equivalent model which are sequentially connected; The electrical characteristic equivalent model comprises an inter-electrode capacitance C pad , a pn node region resistance R s , a pn node region capacitance C j , a substrate resistance R si and a substrate capacitance C si ; The two ends of the inter-electrode capacitor C pad are used as input ends of the microcavity modulator, one end of the inter-electrode capacitor C pad is connected with one end of a substrate resistor R si and one end of a pn node resistor R s , the other end of the substrate resistor R si is connected with one end of a counter substrate capacitor C si , and the other end of the pn node resistor R s is connected with one end of a pn node capacitor C j ; The optical characteristic equivalent model comprises a voltage-controlled current source gVj, a capacitor C, a resistor R 1 , a resistor R 2 and an inductor L 0 ; The positive electrode and the negative electrode of the voltage-controlled current source gVj are respectively connected with one end and the other end of the pn junction capacitor C j , the positive electrode of the voltage-controlled current source gVj is connected with one end of the capacitor C, one end of the resistor R 1 and one end of the resistor R 2 , the other end of the resistor R 2 is connected with one end of the inductor L 0 , the negative electrode of the voltage-controlled current source gVj is connected with the other end of the capacitor C, the other end of the resistor R 1 and the other end of the inductor L 0 , and one end of the resistor R 2 and the other end of the inductor L 0 serve as output ends of the micro-cavity modulator.
3. The electro-optical co-optimization design method for the high-bandwidth microcavity modulator based on the inductance peaking effect according to claim 2, wherein in the step 2, the specific method for constructing the optical characteristic equivalent model is as follows: And obtaining a transmission differential equation of the microcavity modulator according to the structure and parameters of the microcavity modulator, and then adopting verilogA codes to perform equivalence on the transmission differential equation of the microcavity modulator in a cadence design environment to obtain an optical characteristic equivalent model.
4. The electro-optic co-optimization design method of the high-bandwidth microcavity modulator based on the inductance peaking effect according to claim 3, wherein in the step 3, the photoelectric response test comprises an S11 electrical response test, a spectral response test and a small signal response test; And the S11 electrical response test result is used for fitting parameters of the electrical characteristic equivalent model, and the spectral response test and the small signal response test result are used for fitting parameters of the optical characteristic equivalent model.
5. The method for electro-optical co-optimization design of high bandwidth microcavity modulator based on inductance peaking effect according to any one of claims 1-4, wherein in step 1, the inductance is configured as a planar winding inductance, a wire-drawing inductance or a winding wire-drawing inductance.
6. The electro-optical co-optimization design method of the high-bandwidth microcavity modulator based on the inductance peaking effect of claim 5, wherein in the step 1, the structure of the inductor is a plane winding inductor, one end of the plane winding inductor is used for inputting a modulation signal, and the other end of the plane winding inductor is connected with the control input end of the microcavity modulator; The system comprises a micro-cavity modulator, a first planar coil inductor, a second planar coil inductor, a micro-cavity modulator, a first micro-cavity modulator, a second micro-cavity modulator, a first planar coil inductor and a second planar coil inductor, wherein the first planar coil inductor and the second planar coil inductor are arranged in the same plane; or the structure of the inductor is a winding wire drawing inductor, the winding wire drawing inductor comprises a double-layer winding inductor, one end of the double-layer winding inductor is used for inputting a modulation signal, the other end of the double-layer winding inductor is grounded, and a connecting wire led out from the middle of one layer of the double-layer winding inductor is connected with the control input end of the micro-cavity modulator.
7. The method for electro-optical co-optimization design of the high-bandwidth microcavity modulator based on the inductance peaking effect of claim 6, wherein in the step 4, the inductance value and the Q value of the inductor are adjusted by adjusting the geometric shape and/or the material of the inductor; The geometry of the inductor comprises square, polygonal and circular shapes, the material comprises copper, aluminum and gold, and the inductance value is in the range of 10-500 pH.
8. The high-bandwidth microcavity modulator obtained by adopting the high-bandwidth microcavity modulator electro-optical co-optimization design method based on the inductance peaking effect as claimed in any one of claims 1 to 7 is characterized by comprising a microcavity modulator and an inductor; the micro-cavity modulator comprises a substrate, a P doped region, an N doped region, an input straight waveguide, a first electrode and a second electrode, wherein the P doped region, the N doped region and the input straight waveguide are arranged on the substrate; The inductor comprises a first electrode, a second electrode, a P doped region, an N doped region, a first electrode, a second electrode and a third electrode, wherein one end of the inductor is connected with the first electrode, and the other end of the inductor is connected with the P doped region; The P doped region and the N doped region are annular regions and are concentrically arranged from outside to inside, an annular waveguide is arranged between the P doped region and the N doped region, an opening is arranged in the P doped region, and the annular waveguide is coupled and connected with the input straight waveguide at the opening of the P doped region; Or the P doped region and the N doped region are annular regions and are concentrically arranged from inside to outside, an annular waveguide is arranged between the P doped region and the N doped region, an opening is arranged in the N doped region, and the annular waveguide is coupled and connected with the input straight waveguide at the opening of the N doped region; Or the P doped region and the N doped region are disc-shaped regions which are stacked on the substrate, a disc-shaped waveguide is arranged between the P doped region and the N doped region, and the disc-shaped waveguide is coupled and connected with the input straight waveguide; the input end of the input straight waveguide is used for receiving the optical signal, and the output end is used for outputting the modulated optical signal.
9. The high bandwidth microcavity modulator of claim 8, wherein the input straight waveguide is the same thickness as the annular waveguide, the input straight waveguide is the same thickness as the disc-shaped waveguide, and the input straight waveguide has a thickness ranging from 200 mm to 500mm.
10. The high bandwidth microcavity modulator of claim 9, wherein the input straight waveguide, the annular waveguide, and the disk-shaped waveguide are all of silicon.

Description

High-bandwidth microcavity modulator electro-optical co-optimization design method based on inductance peaking effect and high-bandwidth microcavity modulator Technical Field The invention relates to a microcavity modulator and a design method thereof, in particular to an electro-optical co-optimization design method of a high-bandwidth microcavity modulator based on inductance peaking effect and the high-bandwidth microcavity modulator. Background With the rapid development of cloud computing, artificial intelligence and 5G/6G communication technologies, the demand for high-speed, high-capacity data transmission by optical communication systems has grown dramatically. As a core device for optical interconnects, the performance of high-speed electro-optic modulators directly determines the overall bandwidth and energy efficiency of the system. The micro-cavity modulator has important application potential in a silicon-based photon integrated system due to compact size, low power consumption and high modulation efficiency. However, the bandwidth of conventional microcavity modulators is limited by their electro-optic response speed and inherent characteristics of the resonant cavity, which makes it difficult to meet the demands of future ultra-high speed optical communications. In addition, in the field of electro-optical co-design, the inductive peaking effect has been widely used in electrical amplifiers or laser drivers as a classical circuit technique to extend bandwidth. However, the inductance peaking effect is not combined with the photoelectric characteristic of the microcavity modulator, and only a single field (such as a pure optical design or a pure circuit design) is generally focused, so that the matching between the inductance parameter and the resonant frequency and the equivalent capacitance of the microcavity modulator is insufficient, and effective peaking effect and effective bandwidth expansion of the microcavity modulator are difficult to realize, and meanwhile, the design of compatibility of an integrated process, such as high-frequency loss or parasitic effect suppression of on-chip inductance, is lacking. Disclosure of Invention The invention aims to solve the technical problems that the conventional micro-cavity modulator design method does not combine the inductance peaking effect with the photoelectric characteristic of the micro-cavity modulator, so that the effective peaking effect and the effective bandwidth expansion of the micro-cavity modulator are difficult to realize at the same time, and provides a high-bandwidth micro-cavity modulator electro-optical co-optimization design method based on the inductance peaking effect and a high-bandwidth micro-cavity modulator. In order to achieve the above purpose, the invention adopts the following technical scheme: the electro-optical co-optimization design method of the high-bandwidth microcavity modulator based on the inductance peaking effect is characterized by comprising the following steps of: Step 1, designing a micro-cavity modulator, determining the structure and parameters of the micro-cavity modulator, connecting an inductor on the micro-cavity modulator, and determining the structure of the inductor according to the structure of the micro-cavity modulator and the bandwidth of the micro-cavity modulator required by the design, wherein one end of the inductor is used for inputting a modulation signal, the other end of the inductor is connected with the control input end of the micro-cavity modulator, the input end of the micro-cavity modulator is used for receiving an optical signal, and the output end of the micro-cavity modulator is used for outputting a modulated optical signal; step 2, constructing an initial optical equivalent circuit model of the microcavity modulator according to the structure of the microcavity modulator; step 3, performing photoelectric response test on the microcavity modulator, and then fitting parameters of an initial optical equivalent circuit model according to a photoelectric response test result to obtain the optical equivalent circuit model of the microcavity modulator; And 4, inputting an optical equivalent circuit model of the micro-cavity modulator and the architecture of the inductor into the same simulation environment, and adjusting the inductance value and the Q value of the inductor according to the bandwidth of the micro-cavity modulator required by design, so that the group delay influence of the inductance peaking effect in the working frequency range of the micro-cavity modulator is minimized, the group delay response of the inductance peaking effect in the working frequency range of the micro-cavity modulator is stable, and the design of the high-bandwidth micro-cavity modulator is completed. Further, in step 2, the initial optical equivalent circuit model of the microcavity modulator includes an electrical characteristic equivalent model and an optical characteristic equivalent