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CN-121981293-A - Low-temperature radio frequency module, preparation method and quantum computing system

CN121981293ACN 121981293 ACN121981293 ACN 121981293ACN-121981293-A

Abstract

The invention discloses a low-temperature radio frequency module, a preparation method and a quantum computing system, wherein the module comprises a shell, an inner cavity is formed in the shell, and a connector is arranged at the end part of the shell; a thin film type circuit main body arranged in the inner cavity of the shell; the attenuator and the filter are integrated in the circuit main body, and at least one solid dielectric plate is arranged in the inner cavity of the shell. The method comprises the steps of assembling the elements into a whole. The system comprises a quantum chip arranged in a low-temperature environment and a radio frequency control link for controlling the quantum chip, wherein the low-temperature radio frequency module is integrated in the radio frequency control link. The invention not only greatly saves low-temperature space and eliminates the performance and reliability problems caused by connectors and glue filling, but also utilizes the structure of the attenuator to more effectively lead out the heat generated in the work, thereby providing a more compact, stable and reliable low-temperature signal control link for the quantum bit.

Inventors

  • YAN YUXING
  • SHI YONGJI
  • SHAO YINGYI
  • WANG XIWEI

Assignees

  • 量子科技长三角产业创新中心

Dates

Publication Date
20260505
Application Date
20260312

Claims (12)

  1. 1. A low temperature radio frequency module, comprising: A housing having an inner cavity formed therein, the end of the housing being provided with a connector for input and output of external signals; the thin film type circuit main body is arranged in the inner cavity of the shell and is electrically connected with the connector; The attenuator is used for realizing signal attenuation, absorbing partial reflected signals of the quantum chip and being used as an integrated heat sink for directly absorbing and consuming heat dissipation, and the filter is used for realizing low-pass filtering; At least one solid dielectric plate is arranged in the inner cavity of the shell, is tightly contacted with the circuit main body and is used for absorbing infrared signals.
  2. 2. The low temperature rf module of claim 1 wherein the filter and the attenuator are integrally formed on the circuit body and the attenuator and the filter are directly connected by a transmission line on the circuit body.
  3. 3. The low temperature rf module of claim 1 wherein the attenuator comprises at least a T-type attenuator or a pi-type attenuator.
  4. 4. The low temperature rf module of claim 1 wherein the attenuator comprises an input attenuator and an output attenuator disposed at both ends of the circuit body.
  5. 5. The cryogenic radio frequency module of claim 1, characterized in that the attenuator is configured as a heat sink for transferring heat generated by the attenuator or heat generated by the periphery to an external cold plate via the housing.
  6. 6. The low temperature radio frequency module according to claim 1, wherein the filter comprises at least a five-order chebyshev low pass filter.
  7. 7. The low temperature rf module of claim 1 wherein the solid dielectric plate comprises at least a dielectric plate made of ECCOSORB material and the solid dielectric plate is shaped and sized to fit the shape and size of the interior cavity of the housing.
  8. 8. The cryogenic radio frequency module of claim 1, characterized in that the housing comprises an upper cover, a lower cover or a compression member, the upper cover and lower cover or the compression member applying mechanical pressure to the solid state dielectric plate.
  9. 9. The low temperature radio frequency module of claim 1, wherein the connector comprises an SMA type or SMP type connector.
  10. 10. The low-temperature radio frequency module according to claim 8, wherein two solid dielectric plates are provided, and the two solid dielectric plates are respectively pressed on the upper surface and the lower surface of the circuit main body by mechanical pressure.
  11. 11. A method of making the low temperature radio frequency module of any one of claims 1-10, comprising: providing a housing and a connector mounted on the housing; preparing a thin film circuit integrated with a filter and an attenuator as a circuit main body, and arranging the thin film circuit in an inner cavity of the shell; At least one solid infrared absorbing agent plate is provided and placed in the interior cavity of the housing so as to be in intimate contact with and secured to the circuit body.
  12. 12. A quantum computing system comprising a quantum chip disposed in a low temperature environment and a radio frequency control link controlling the quantum chip, wherein the radio frequency control link has integrated therein a low temperature radio frequency module as claimed in any one of claims 1-10.

Description

Low-temperature radio frequency module, preparation method and quantum computing system Technical Field The invention belongs to the technical field of quantum computing, and particularly relates to a low-temperature radio frequency module, a preparation method and a quantum computing system. Background Superconducting quantum computing is a leading-edge field of current quantum information science, and core qubits thereof generally need to work in extremely low-temperature (e.g.,. Ltoreq.20 mK) environments to maintain quantum coherence. In the low temperature environment, the radio frequency signal link for controlling and reading the qubit is subjected to strict filtering, attenuation and infrared shielding treatment to inhibit interference of thermal noise, high frequency noise and infrared radiation on the qubit. In conventional superconducting quantum computing systems, the radio frequency control link is typically implemented in a cascade of discrete devices. A related exemplary implementation includes serially connecting an attenuator, a low pass filter, and an infrared filter in sequence in a low temperature region. Because a large number of discrete devices and shells thereof are piled up in an mK temperature area with extremely limited dilution refrigerator, precious space resources are occupied, and the expansion capacity of a quantum system to hundred bits or even kilobits is severely restricted. In addition, the current technology of implementing the infrared filtering function generally adopts a glue filling technology, namely, liquid epoxy resin and other infrared absorbing materials are filled in the cavity of the device. However, the process belongs to non-standardized operation, is difficult to control accurately, and can introduce bubbles in the glue injection process, and the existence of the bubbles can change local electromagnetic impedance sharply, so that signal reflection is caused, and the performance is uneven. At the same time, internal stresses generated by bubbles and curing shrinkage can degrade the mechanical strength and thermal conductivity of the material, resulting in unpredictable device performance and poor uniformity. Disclosure of Invention The invention aims to provide a low-temperature radio frequency module, a preparation method and a quantum computing system, which are used for solving the problems of local impedance, signal radiation and attenuation performance influence caused by compression of mK temperature area space and air bubbles brought by a glue filling process due to accumulation of a large number of devices in the prior art. To this end, an aspect of the present invention provides a low temperature radio frequency module, including: A housing having an inner cavity formed therein, the end of the housing being provided with a connector for input and output of external signals; the thin film type circuit main body is arranged in the inner cavity of the shell and is electrically connected with the connector; The attenuator is used for realizing signal attenuation, absorbing partial reflected signals of the quantum chip and being used as an integrated heat sink for directly absorbing and consuming heat dissipation, and the filter is used for realizing low-pass filtering; At least one solid dielectric plate is arranged in the inner cavity of the shell, is tightly contacted with the circuit main body and is used for absorbing infrared signals. In some embodiments, the filter and the attenuator are integrally integrated on the circuit body, and the attenuator and the filter are directly connected through a transmission line on the circuit body. In some embodiments, the attenuator includes at least a T-type attenuator or a pi-type attenuator. In some embodiments, the attenuator includes an input attenuator and an output attenuator disposed at both ends of the circuit body. In some embodiments, the attenuator is configured as a heat sink for transferring heat generated by the attenuator or heat generated by the periphery to an external cold plate via the housing. In some embodiments, the filter comprises at least a five-order chebyshev low pass filter. In some embodiments, the solid state media sheet comprises at least a media sheet made of ECCOSORB materials, and the shape and size of the solid state media sheet is adapted to the shape and size of the inner cavity of the housing. In some embodiments, the housing includes an upper cover, a lower cover, or a compression member that applies mechanical pressure to the solid media sheet. In some embodiments, the connector comprises an SMA type or SMP type connector. In some embodiments, the solid dielectric plates are provided in two pieces, and the two solid dielectric plates are respectively pressed on the upper surface and the lower surface of the circuit main body by mechanical pressure. In another aspect, a method for preparing a low-temperature radio frequency module is provided, including: providing a housi