CN-121982949-A - Dry-type capacitive sleeve defect simulation method and device

CN121982949ACN 121982949 ACN121982949 ACN 121982949ACN-121982949-A

Abstract

The invention provides a defect simulation method and device for a dry capacitor type sleeve, wherein the method comprises the steps of respectively obtaining the maximum electric field intensity and field intensity distribution characteristics of a three-dimensional model of a defective sleeve and a three-dimensional model of a non-defective sleeve, respectively obtaining insulation performance test data of the defective sleeve and the non-defective sleeve, respectively comparing and analyzing the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defective sleeve and the three-dimensional model of the non-defective sleeve and the insulation performance test data of the defective sleeve and the non-defective sleeve, and establishing a quantitative relation between defect parameters and electric insulation parameters. The invention can simulate the defects of the dry type capacitor bushing, further carry out accurate and systematic analysis, and provide data support and theoretical basis for insulation design optimization, manufacturing process improvement and running state evaluation of the dry type capacitor bushing.

Inventors

XU ZUOMING
CAI GUANGYI
LIU TAIWEI
YE QIMING
Xie qijia
LIU JIANQIAO
YIN PENGBO
LI ZHIYU
LIU JIE
GAO XIANG
XIE XIONGJIE
HU WEI
TONG XIN

Assignees

中国电力科学研究院有限公司
国网湖北省电力有限公司电力科学研究院
国家电网有限公司

Dates

Publication Date: 20260505
Application Date: 20251229

Claims (10)

1. A method for simulating defects of a dry capacitive sleeve is characterized by comprising the following steps: Respectively obtaining the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defect casing and the three-dimensional model of the defect-free casing; respectively acquiring insulation performance test data of the defect sleeve and the defect-free sleeve; And comparing and analyzing the three-dimensional model of the defective sleeve with the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the non-defective sleeve and the insulation performance test data of the defective sleeve and the non-defective sleeve, and establishing a quantitative relation between defect parameters and electrical insulation parameters.
2. The method of claim 1, further comprising, prior to the step of separately obtaining the maximum electric field strength and field strength distribution characteristics of the three-dimensional model of the defective casing and the three-dimensional model of the non-defective casing: And determining the defect type and defect parameters, and preparing the defect casing.
3. The method for simulating defects of a dry capacitive sleeve according to claim 2, wherein, The defect type comprises one or more of metal foreign matter defect, insulating foreign matter defect, local crack defect, bubble defect or polar plate fold; The defect parameters include the location and size of the defect.
4. The method for simulating defects in a dry capacitive type bushing according to claim 3, wherein in the step of determining the type of defect and the defect parameters, preparing a defective bushing, Preparing a sample block according to the defect type and the defect parameters; And preparing a defective sleeve according to the defect parameters and the manufacturing process, and embedding the sample block in the preparation process.
5. The method of claim 4, wherein in the step of preparing a dummy according to the defect type and the defect parameters, Selecting a sample block similar to the core material of the non-defective sleeve; When the defect type is a metal foreign matter defect, placing metal foreign matters into the sample block to form a defect sample block, and embedding the defect sample block in the preparation process of the defect sleeve; when the defect type is an insulation foreign matter defect, placing insulation foreign matters into the sample block to form a defect sample block, and embedding the defect sample block in the preparation process of the defect sleeve; when the defect type is a local crack defect, manufacturing an air gap in the sample block to form a defect sample block, and embedding the defect sample block in the preparation process of the defect casing; When the defect type is bubble defect, embedding an air domain in the sample block to form a defect sample block, and embedding the defect sample block in the preparation process of the defect sleeve; And embedding the sample block in the preparation process of the defect sleeve when the defect type is polar plate folds.
6. The method for simulating defects in a dry capacitive sleeve according to claim 5, wherein in the step of preparing a defective sleeve according to the defect parameters and the manufacturing process and embedding the dummy during the preparation, When the defect type is any one of a metal foreign matter defect, an insulating foreign matter defect, a local crack defect and a bubble defect, when a capacitor core body of a defective sleeve is rolled, when rolling a polar plate before a defect position is finished, rolling a core body material to a designed diameter, digging the core body material at the defect position to form a pit, placing a defect sample block in the pit, and finishing the preparation of the defective sleeve according to the manufacturing process; When the defect type is pole plate wrinkling, when the capacitor core body of the defect sleeve is rolled, digging a core body material at the position corresponding to the defect position to form a pit before rolling to the pole plate needing wrinkling, pressing the pole plate needing wrinkling into the pit by using the sample block, rolling the core body material, and completing the preparation of the defect sleeve according to the manufacturing process.
7. The method of claim 2, wherein in the step of obtaining the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defective casing and the three-dimensional model of the non-defective casing, Respectively establishing a three-dimensional model of the defective sleeve and a three-dimensional model of the non-defective sleeve, respectively carrying out simulation calculation on electric field distribution of the three-dimensional model of the defective sleeve and the three-dimensional model of the non-defective sleeve and radial electric field intensity of a capacitor core under the same voltage, and respectively obtaining the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defective sleeve and the three-dimensional model of the non-defective sleeve; When the three-dimensional model of the defect sleeve is subjected to electric field simulation calculation, electric field distribution around the defect, electric field intensity curves in the radial direction and the axial direction of the capacitor core body and the position and the range of the field intensity concentration area are also obtained.
8. The method of claim 1, wherein in the step of acquiring insulation performance test data of the defective sleeve and the non-defective sleeve, respectively, Respectively testing the insulation performance of the defect sleeve and the defect-free sleeve, starting from 0V, boosting at a preset rate, continuously monitoring the partial discharge signal of the sleeve in the boosting process, and recording the partial discharge initial voltage of the sleeve; After boosting to rated operating voltage and stabilizing, measuring and recording the partial discharge capacity, discharge phase distribution spectrogram, capacitance, dielectric loss factor and frequency domain dielectric spectrum of the sleeve.
9. The method according to claim 1, wherein the step of comparing and analyzing the maximum electric field intensity, the field intensity distribution characteristics of the three-dimensional model of the defective casing and the three-dimensional model of the non-defective casing and the insulation performance test data of the defective casing and the non-defective casing to establish a quantitative relationship between a defect parameter and an electrical insulation parameter, Fitting the three-dimensional model of the defective sleeve, the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the non-defective sleeve and insulation performance test data of the defective sleeve and the non-defective sleeve, and establishing a quantitative relation between defect parameters and electric insulation parameters according to the fitted data, wherein the electric insulation parameters comprise maximum electric field intensity, partial discharge initial voltage and partial discharge capacity.
10. A dry capacitive sleeve defect simulation device, comprising: a field intensity obtaining unit (100) for obtaining the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defective sleeve and the three-dimensional model of the non-defective sleeve, respectively; A test data acquisition unit (200) for acquiring insulation performance test data of the defective sleeve and the non-defective sleeve, respectively; and the analysis unit (300) is used for comparing and analyzing the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defect sleeve and the three-dimensional model of the defect-free sleeve and the insulation performance test data of the defect sleeve and the defect-free sleeve, and establishing a quantitative relation between defect parameters and electrical insulation parameters.

Description

Dry-type capacitive sleeve defect simulation method and device Technical Field The invention relates to the technical field of high-voltage power equipment, in particular to a method and a device for simulating defects of a dry-type capacitive sleeve. Background The epoxy glue paper impregnated capacitive bushing is a key device in power transmission and transformation engineering and is used for providing insulation and support for conductors passing through walls, boxes or the like to be separated. The sleeve is generally composed of a current-carrying guide rod, an epoxy resin impregnated insulating paper capacitor core, an external silicon rubber outer insulating sheath and the like, and the axial and radial electric field distribution of the sleeve can be effectively optimized through the design of capacitor polar plate distribution, so that the sleeve can be ensured to safely and stably operate under high voltage. However, during the manufacturing and running process of the bushing, various defects such as polar plate wrinkles, bubbles, local cracks and the like may be generated in the capacitor core due to the influence of various factors such as poor process, material defects, mechanical stress, thermal aging and the like, and the defects can change the electric field distribution in the bushing, induce local discharge, accelerate the aging of insulating materials, finally possibly cause bushing breakdown, cause power failure accidents and cause great economic loss. The formation of defects in the sleeve is random, the influence degree of the positions and the forms of the defects on an electric field is inconsistent, and the development rules of different defects in the operation process are also different, so that in order to effectively distinguish defect types in test detection, a single defect is required to be simulated and determined in the sleeve core, and analysis and research are carried out on the parameter change rules in the defect development process. However, existing casing defect studies rely mostly on post-fault disassembly analysis, lacking systematic analysis and accurate simulation of typical defects. Disclosure of Invention In view of the above, the invention provides a method for simulating defects of a dry capacitive bushing, which aims to solve the problem that the prior art lacks of systematic analysis and accurate simulation of typical defects of an epoxy glue paper-impregnated capacitive bushing. The invention also provides a dry type capacitance sleeve defect simulation device. In one aspect, the invention provides a dry capacitor type bushing defect simulation method, which comprises the steps of respectively obtaining the maximum electric field intensity and field intensity distribution characteristics of a three-dimensional model of a defective bushing and a three-dimensional model of a non-defective bushing, respectively obtaining insulation performance test data of the defective bushing and the non-defective bushing, respectively comparing and analyzing the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defective bushing and the three-dimensional model of the non-defective bushing and the insulation performance test data of the defective bushing and the non-defective bushing, and establishing a quantitative relation between defect parameters and electric insulation parameters. Further, the method for simulating the defects of the dry capacitor type sleeve further comprises the steps of determining the defect type and defect parameters and preparing the defect sleeve before the steps of respectively obtaining the maximum electric field intensity and field intensity distribution characteristics of the three-dimensional model of the defect sleeve and the three-dimensional model of the defect-free sleeve. Further, in the dry capacitive bushing defect simulation method, the defect type comprises one or more of a metal foreign matter defect, an insulation foreign matter defect, a local crack defect, a bubble defect and a polar plate fold, and the defect parameters comprise the position and the size of the defect. Further, in the method for simulating the defects of the dry capacitor type bushing, the defect type and the defect parameters are determined, in the step of preparing the defect bushing, the sample block is prepared according to the defect type and the defect parameters, the defect bushing is prepared according to the defect parameters and the manufacturing process, and the sample block is embedded in the preparation process. Further, in the method for simulating the defects of the dry capacitor bushing, in the step of preparing the sample blocks according to the defect types and the defect parameters, the sample blocks similar to the core materials of the non-defective bushing are selected, when the defect types are metal foreign matter defects, the metal foreign matter is placed in the sa