CN-121983100-A - Optical waveguide and heterojunction two-dimensional material integrated nonvolatile memory structure and application method

CN121983100ACN 121983100 ACN121983100 ACN 121983100ACN-121983100-A

Abstract

The invention provides a nonvolatile memory structure integrating optical waveguide and heterojunction two-dimensional material and an application method thereof, relating to the technical field of photoelectron integration, wherein when an electric field pulse is applied to the heterojunction two-dimensional material layer through a positive electrode layer and a negative electrode layer by arranging the heterojunction two-dimensional material layer in an evanescent field area of the optical waveguide layer, the heterojunction two-dimensional material layer can generate various nonvolatile heterojunction polarization states, so that the optical constants and the optical states of the nonvolatile storage structure are changed, the nonvolatile storage structure can be used for storing the optical states, and the optical memory function is realized. Even in the case of power outage, the stored optical state is not lost, and ultra-low static power consumption can be achieved. Because the inversion of the polarization state of the heterojunction is realized by the inversion of the heterojunction domain, the power consumption of the nonvolatile memory structure is far lower than the thermal power consumption required by the phase change memory or the thermo-optic device.

Inventors

HE YANDONG
WANG XINGJUN
ZHANG JINGMEI
WANG HAOYU

Assignees

北京大学

Dates

Publication Date: 20260505
Application Date: 20251126

Claims (10)

1. The nonvolatile memory structure integrating the optical waveguide and the heterojunction two-dimensional material is characterized by comprising an optical waveguide layer, a heterojunction two-dimensional material layer, a positive electrode layer and a negative electrode layer; The optical waveguide layer is used for transmitting optical signals; the heterojunction two-dimensional material layer is arranged in an evanescent field region of the optical waveguide layer; The positive electrode layer and the negative electrode layer are both arranged on the heterojunction two-dimensional material layer and are used for applying electric field pulses to the heterojunction two-dimensional material layer; the electric field pulse is used for driving the heterojunction two-dimensional material layer to generate at least two nonvolatile heterojunction polarization states, and under different heterojunction polarization states, the optical constants and the optical states of the nonvolatile memory structure are different.
2. The non-volatile memory structure of claim 1, wherein the optical state comprises transmittance and/or phase.
3. The non-volatile memory structure of claim 1, wherein the electric field pulse is specifically configured to: And driving the heterojunction two-dimensional material layer to generate the heterojunction polarization state based on an interface electric dipole energy band modulation effect and an electric field induced interlayer coupling modulation effect.
4. The non-volatile memory structure of claim 1, wherein the number of types of heterojunction polarization states is determined based on at least one parameter of the magnitude, width, and number of the electric field pulses.
5. The non-volatile memory structure of claim 1, wherein the locations of application of the non-volatile memory structure comprise at least one of: An optical resonant cavity; one interference arm of the interferometer; Within each optical device in the optical neural network; An optical neural network is connected to the optical waveguide of each optical device.
6. The optical waveguide and heterojunction two-dimensional material integrated nonvolatile memory structure of claim 5, wherein the optical resonant cavity comprises at least one of a micro-ring resonant cavity and a photonic crystal cavity.
7. The non-volatile memory structure of any of claims 1-6, wherein the heterojunction two-dimensional material layer comprises a WSe 2 material layer and a WS 2 material layer; The overlapping region of the WSe 2 material layer and the WS 2 material layer forms a heterojunction.
8. The non-volatile memory structure of any of claims 1-6, wherein the optical waveguide layer is integrated with a silicon photonic mesa, a silicon nitride photonic mesa, or a thin film lithium niobate photonic mesa.
9. The non-volatile memory structure of any of claims 1-6, further comprising a substrate; the optical waveguide layer is disposed on the substrate.
10. A method of using the optical waveguide of any one of claims 1-9 in a non-volatile memory structure integrated with a heterojunction two-dimensional material, comprising: Applying an electric field pulse to the heterojunction two-dimensional material layer of the nonvolatile memory structure based on the positive electrode layer and the negative electrode layer of the nonvolatile memory structure; After the electric field pulse is removed, the heterojunction two-dimensional material layer triggers power-off optical memory, stores optical states, and detects optical signals output by the optical waveguide layer after the optical signals are injected into the optical waveguide layer of the nonvolatile storage structure; the optical state is read based on the optical signal injected by the optical waveguide layer and the optical signal output.

Description

Optical waveguide and heterojunction two-dimensional material integrated nonvolatile memory structure and application method Technical Field The invention relates to the technical field of photoelectron integration, in particular to a nonvolatile memory structure integrating an optical waveguide and a heterojunction two-dimensional material and an application method. Background With the proliferation of bandwidth demands for optical communication networks and the rise of optical computing, artificial intelligence hardware, on-chip optoelectronic integrated circuits (Optoelectronic Integrated Circuit, PIC) are evolving towards higher densities and lower power consumption. In Optical networks and Optical computing systems, optical buffers (Optical buffers) and nonvolatile memory units are key bottlenecks for implementing signal processing, routing switching, and weight storage. Currently, the implementation of "storage" or "holding" of on-chip optical signals relies mainly on two technological paths. One is a volatile electro-optic modulator, such as a silicon (Si) or Lithium Niobate (LN) based mach-zehnder interferometer (MZI) or micro-ring resonator (MRR) modulator. They can switch the optical signal rapidly, but their state depends on the applied continuous bias, and once the power is cut off, the information is lost immediately, so that the static power consumption is high. And second, nonvolatile phase change memories, such as phase change materials integrated on waveguides. The material is induced to switch between crystalline and amorphous states by electric or optical pulses, thereby realizing nonvolatile optical memory, but with greater power consumption and slower speed. Disclosure of Invention The invention provides a nonvolatile memory structure integrating an optical waveguide and a heterojunction two-dimensional material and an application method thereof, which are used for solving the defects in the related art. The invention provides a nonvolatile memory structure integrating an optical waveguide and a heterojunction two-dimensional material, which comprises an optical waveguide layer, a heterojunction two-dimensional material layer, a positive electrode layer and a negative electrode layer; The optical waveguide layer is used for transmitting optical signals; the heterojunction two-dimensional material layer is arranged in an evanescent field region of the optical waveguide layer; The positive electrode layer and the negative electrode layer are both arranged on the heterojunction two-dimensional material layer and are used for applying electric field pulses to the heterojunction two-dimensional material layer; the electric field pulse is used for driving the heterojunction two-dimensional material layer to generate at least two nonvolatile heterojunction polarization states, and under different heterojunction polarization states, the optical constants and the optical states of the nonvolatile memory structure are different. According to the invention, a non-volatile memory structure is provided in which an optical waveguide is integrated with a heterojunction two-dimensional material, wherein the optical state comprises transmittance and/or phase. According to the non-volatile memory structure with the integrated optical waveguide and heterojunction two-dimensional material, the electric field pulse is specifically used for: And driving the heterojunction two-dimensional material layer to generate the heterojunction polarization state based on an interface electric dipole energy band modulation effect and an electric field induced interlayer coupling modulation effect. According to the nonvolatile memory structure with the integrated optical waveguide and heterojunction two-dimensional material, the number of types of heterojunction polarization states is determined based on at least one parameter of the amplitude, the width and the number of electric field pulses. According to the nonvolatile memory structure with the integrated optical waveguide and heterojunction two-dimensional material, the application position of the nonvolatile memory structure comprises at least one of the following positions: An optical resonant cavity; one interference arm of the interferometer; Within each optical device in the optical neural network; An optical neural network is connected to the optical waveguide of each optical device. According to the invention, the optical waveguide and heterojunction two-dimensional material integrated nonvolatile storage structure is provided, and the optical resonant cavity comprises at least one of a micro-ring resonant cavity and a photonic crystal cavity. According to the nonvolatile memory structure with the integrated optical waveguide and heterojunction two-dimensional material, the heterojunction two-dimensional material layer comprises a WSe 2 material layer and a WS 2 material layer; The overlapping region of the WSe 2 material layer and the WS 2 material layer for