CN-121983102-A - Data moving method, controller, medium and product

Abstract

The application provides a data moving method, a controller, a medium and a product, which are applied to the technical field of electronic chips, wherein the method comprises the steps of obtaining a plurality of groups of flash memory sample wafers; the method comprises the steps of respectively carrying out erasing operation on a plurality of groups of flash memory sample pieces for corresponding times to obtain a plurality of groups of flash memory sample pieces after the erasing operation, placing the plurality of groups of flash memory sample pieces at a preset temperature, carrying out a plurality of groups of rereading tests on the plurality of groups of flash memory sample pieces at a preset period to count the error rate corresponding to each group of rereading tests, analyzing according to the error rate to obtain an analysis result, and carrying out data movement on the flash memory sample pieces according to the analysis result. According to the application, the error rates counted by the repeated reading tests of the multiple groups of flash memory samples are analyzed, so that the flash memory samples are moved according to the analysis result, the flash memory data can be prevented from being moved too early, and the read-write performance of the flash memory module is improved.

Inventors

• HE LE
• LAI NAI

Assignees

• 珠海妙存科技有限公司

Dates

Publication Date

20260505

Application Date

20251230

Claims (10)

1. 1. A method of data movement, the method comprising: Obtaining a plurality of groups of flash memory sample wafers; respectively performing erasing operation on a plurality of groups of flash memory sample wafers for corresponding times to obtain a plurality of groups of flash memory sample wafers after the erasing operation; placing a plurality of groups of flash memory sample wafers at a preset temperature, and performing a plurality of groups of rereading tests on the plurality of groups of flash memory sample wafers at a preset period to count the error rate corresponding to each group of rereading tests; And analyzing according to the error rate to obtain an analysis result, and carrying out data movement on the flash memory sample according to the analysis result.
2. 2. The method of claim 1, wherein the predetermined temperature comprises a first predetermined temperature and a second predetermined temperature, the predetermined period comprises a first predetermined period and a second predetermined period, the placing the plurality of sets of flash memory samples at the predetermined temperature and performing a plurality of sets of rereading tests on the plurality of sets of flash memory samples at the predetermined period to count bit error rates corresponding to each set of rereading tests comprises: placing a plurality of groups of flash memory sample wafers at a first preset temperature, and performing a plurality of groups of rereading tests on the plurality of groups of flash memory sample wafers at a first preset period; after a plurality of groups of flash memory sample wafers are placed at the first preset temperature for a preset time, the first preset temperature is adjusted to the second preset temperature, and a plurality of groups of rereading tests are conducted on the plurality of groups of flash memory sample wafers at the second preset period.
3. 3. The method of claim 2, wherein performing a plurality of sets of rereading tests on a plurality of sets of the flash memory samples at a first predetermined period comprises: and under a first preset period, adopting re-reading parameter sets with different reference voltages or different reading time sequences to read and test a plurality of groups of flash memory sample wafers.
4. 4. The method of claim 3, wherein performing multiple sets of rereading tests on multiple sets of the flash memory samples at a second predetermined period comprises: And under a second preset period, adopting re-reading parameter sets with different reference voltages or different reading time sequences to read and test a plurality of groups of flash memory sample wafers.
5. 5. The method of claim 4, wherein the analyzing according to the bit error rate to obtain an analysis result, and performing data movement on the flash sample according to the analysis result, comprises: under the condition that the error rate corresponding to a single re-reading parameter set or at least two re-reading parameter sets is lower than a preset error rate threshold, carrying out data correction according to the single re-reading parameter set or at least two re-reading parameter sets to obtain a correction result; And carrying out data movement according to the correction result.
6. 6. The method of claim 5, wherein said performing data movement based on said correction result comprises: When the single re-reading parameter set or at least two re-reading parameter sets can be corrected, the single re-reading parameter set or at least two re-reading parameter sets are not moved; and when the single re-reading parameter set or at least two re-reading parameter sets cannot be corrected, moving the single re-reading parameter set or the at least two re-reading parameter sets.
7. 7. The method of claim 1, further comprising, after said counting each set of rereading tests a corresponding bit error rate: and according to a preset coding rule, constructing a table according to the error rate to obtain a statistical table, and analyzing the error rate based on the statistical table.
8. 8. A controller comprising a memory, a processor and a computer program stored on the memory and executable on the processor, the processor executing the data migration method according to any one of claims 1 to 7 when the computer program is executed.
9. 9. A computer-readable storage medium having stored thereon computer-executable instructions for performing the data migration method according to any one of claims 1 to 7.
10. 10. A computer program product comprising a computer program or computer instructions, characterized in that the computer program or the computer instructions are stored in a computer readable storage medium, from which the computer program or the computer instructions are read by a processor of a computer device, which processor executes the computer program or the computer instructions, so that the computer device performs the data migration method of any one of claims 1 to 7.

Description

Data moving method, controller, medium and product Technical Field The present application relates to the field of electronic chip technologies, and in particular, to a data migration method, a controller, a medium, and a product. Background NAND FLASH is a widely used storage product in the related art, and has the advantages of high speed, non-volatile and the like. The data is actually represented by the form of stored charges in the memory, and some internal and external environment changes can cause the quantity of charges to change, so that the error bit of the flash memory data is generated. In practical flash memory module product application, in order to ensure the safety of flash memory data, when the data error rate in a physical block of a flash memory is found to rise to a certain degree, the data of the physical block is moved to a new physical block, so that the error rate of the flash memory data is reduced, and the safety of the flash memory data is ensured. Disclosure of Invention The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides a data moving method, a controller, a medium and a product, which aim to prevent the flash memory data from moving prematurely and improve the read-write performance of the flash memory module. In a first aspect, an embodiment of the present application provides a data migration method, where the method includes: Obtaining a plurality of groups of flash memory sample wafers; respectively performing erasing operation on a plurality of groups of flash memory sample wafers for corresponding times to obtain a plurality of groups of flash memory sample wafers after the erasing operation; placing a plurality of groups of flash memory sample wafers at a preset temperature, and performing a plurality of groups of rereading tests on the plurality of groups of flash memory sample wafers at a preset period to count the error rate corresponding to each group of rereading tests; And analyzing according to the error rate to obtain an analysis result, and carrying out data movement on the flash memory sample according to the analysis result. According to some embodiments of the application, the preset temperature includes a first preset temperature and a second preset temperature, the preset period includes a first preset period and a second preset period, the placing a plurality of groups of flash memory samples at the preset temperature and performing a plurality of groups of rereading tests on the plurality of groups of flash memory samples at the preset period to count bit error rates corresponding to each group of rereading tests, including: placing a plurality of groups of flash memory sample wafers at a first preset temperature, and performing a plurality of groups of rereading tests on the plurality of groups of flash memory sample wafers at a first preset period; after a plurality of groups of flash memory sample wafers are placed at the first preset temperature for a preset time, the first preset temperature is adjusted to the second preset temperature, and a plurality of groups of rereading tests are conducted on the plurality of groups of flash memory sample wafers at the second preset period. According to some embodiments of the application, the performing multiple sets of rereading tests on multiple sets of flash memory samples in a first preset period includes: and under a first preset period, adopting re-reading parameter sets with different reference voltages or different reading time sequences to read and test a plurality of groups of flash memory sample wafers. According to some embodiments of the application, the performing multiple sets of rereading tests on multiple sets of flash memory samples in a second preset period includes: And under a second preset period, adopting re-reading parameter sets with different reference voltages or different reading time sequences to read and test a plurality of groups of flash memory sample wafers. According to some embodiments of the present application, the analyzing according to the bit error rate to obtain an analysis result, and performing data movement on the flash memory sample according to the analysis result includes: under the condition that the error rate corresponding to a single re-reading parameter set or at least two re-reading parameter sets is lower than a preset error rate threshold, carrying out data correction according to the single re-reading parameter set or at least two re-reading parameter sets to obtain a correction result; And carrying out data movement according to the correction result. According to some embodiments of the application, the data shifting according to the correction result includes: When the single re-reading parameter set or at least two re-reading parameter sets can be corrected, the single re-reading parameter set or at least two re-reading parameter sets are not moved; and when the sin