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CN-121983373-A - Modified conductive graphene and preparation method and application thereof

CN121983373ACN 121983373 ACN121983373 ACN 121983373ACN-121983373-A

Abstract

The invention relates to a modified conductive graphene, a preparation method and application thereof, and relates to the field of conductive materials, comprising the following steps of adding aluminum-silicon alloy powder into an alkaline solution for a first stirring reaction, and then washing and drying to obtain a first silicon carrier; and (3) under the inert gas atmosphere, carrying out heating reaction on the first silicon carrier and magnesium powder, carrying out acid washing and drying to obtain a second silicon carrier, immersing the second silicon carrier in a nickel-containing solution, and carrying out drying and reduction to obtain a third silicon carrier. Compared with the prior art, the modified conductive graphene material with high conductivity and excellent compatibility is obtained by adopting the three-dimensional porous silicon as the carrier and chemically depositing and growing the graphene layer on the surface of the carrier, and further grafting polyamide-amine (PAMAM) on the surface of the graphene, so that the compatibility with polymers is enhanced, and the agglomeration is inhibited.

Inventors

  • LI LINJUN
  • LIANG CHAOYUN

Assignees

  • 深圳市金晖科技有限公司

Dates

Publication Date
20260505
Application Date
20260203

Claims (10)

  1. 1. The preparation method of the modified conductive graphene is characterized by comprising the following steps of: Adding aluminum-silicon alloy powder into alkaline solution to perform a first stirring reaction, and then washing and drying to obtain a first silicon carrier; Heating the first silicon carrier and magnesium powder in an inert gas atmosphere for reaction, and then carrying out acid washing and drying to obtain a second silicon carrier; immersing the second silicon carrier in a nickel-containing solution, and then drying and reducing to obtain a third silicon carrier; Depositing a graphene layer on the surface of the third silicon carrier by adopting a chemical vapor deposition mode to obtain first graphene; and immersing the first graphene into a PAMAM ethanol solution to perform a second stirring reaction, so as to obtain the modified conductive graphene.
  2. 2. The method for preparing modified conductive graphene according to claim 1, wherein the step of adding aluminum-silicon alloy powder into an alkaline solution to perform a first stirring reaction, and then washing and drying to obtain a first silicon carrier comprises the following steps: and adding the aluminum-silicon alloy powder into a NaOH solution with the concentration of 1-1.5 mol/L, reacting for 2-3 hours at 80-90 ℃, washing to be neutral, and drying in vacuum to obtain the first silicon carrier.
  3. 3. The preparation method of the modified conductive graphene according to claim 2, wherein the mass fraction of Al in the aluminum-silicon alloy powder is 27% -35%, the particle size of the aluminum-silicon alloy powder is 2% -5 μm, and the mass ratio of the aluminum-silicon alloy powder to the NaOH solution is 1 (10% -15).
  4. 4. The method for preparing modified conductive graphene according to claim 1, wherein the step of heating the first silicon carrier and magnesium powder in an inert gas atmosphere, then pickling and drying to obtain a second silicon carrier comprises the following steps: And (3) carrying out heating reaction on the first silicon carrier and the magnesium powder with the mass ratio of 1 (2-3) at the temperature of 600-680 ℃ for 3-5 h in an argon atmosphere, adding 1mol/L HCl solution after the reaction is finished for carrying out acid washing for 30-45 min, and carrying out vacuum drying to obtain the second silicon carrier.
  5. 5. The method of producing modified conductive graphene according to claim 1, wherein the step of immersing the second silicon carrier in a nickel-containing solution, followed by drying and reduction, to obtain a third silicon carrier comprises the steps of: And immersing the second silicon carrier in 0.1mol/L Ni (NO 3 ) 2 solution), drying, and then carrying out reduction for 1-1.5H at the temperature of 400-460 ℃ under the H 2 /Ar mixed gas with the volume ratio of 1 (8-9) to obtain the third silicon carrier.
  6. 6. The method for preparing modified conductive graphene according to claim 1, wherein depositing a graphene layer on the surface of the third silicon carrier by chemical vapor deposition, to obtain the first graphene comprises the following steps: And introducing 20-25 sccmCH 4 and 100-120 sccmH 2 , growing for 30-40 min at 1050-1100 ℃, and cooling to room temperature to obtain the first graphene.
  7. 7. The method for preparing modified conductive graphene according to claim 1, wherein the step of immersing the first graphene in PAMAM ethanol solution to perform a second stirring reaction to obtain the second graphene comprises the following steps: And immersing the first graphene into 0.5-1wt% PAMAM ethanol solution, carrying out the second stirring reaction for 5-7 h at the temperature of 80-90 ℃, filtering, and drying in vacuum to obtain the modified conductive graphene.
  8. 8. The modified conductive graphene is characterized in that the modified conductive graphene is prepared by the preparation method of the modified conductive graphene according to any one of claims 1-7.
  9. 9. Use of the modified conductive graphene of claim 8 in the preparation of capacitors and fuel cells.
  10. 10. The use according to claim 9, wherein preparing the bipolar plate of the fuel cell comprises the steps of: adding 10-15 parts by weight of modified graphene, 20-25 parts by weight of polyethylene dioxythiophene, 10-15 parts by weight of epoxy resin and 8-13 parts by weight of carbon nano tubes into 50-60 parts by weight of N-methylpyrrolidone solvent, and performing ultrasonic dispersion, wherein the ultrasonic power is 200-300W, and the ultrasonic time is 30-60 min to obtain slurry; And coating the slurry on a graphite substrate, pre-curing for 1-1.5 h at 120-125 ℃, and hot-pressing for 2-2.5 h at 180-185 ℃ and 10-12 MPa to form the bipolar plate with the thickness of 0.5 mm.

Description

Modified conductive graphene and preparation method and application thereof Technical Field The invention relates to the field of conductive materials, in particular to modified conductive graphene, and a preparation method and application thereof. Background In the field of conductive materials, with the rapid development of industries such as electronics, energy sources and the like, the demand for materials with high conductivity and good compatibility is increasingly urgent. Conductive materials are a key component of many advanced technologies, and the performance of the conductive materials directly affects the operation efficiency and stability of related devices and systems. In many application scenarios such as fuel cells, supercapacitors, conductive composite materials, the conductive materials need to have high-efficiency charge transfer capability, and good compatibility with matrix materials or other components to ensure full play of overall performance. Graphene has been found to be attractive as a two-dimensional material consisting of carbon atoms because of its unique electronic structure and excellent physicochemical properties. The conductive material has extremely high carrier mobility, excellent electrical conductivity and thermal conductivity, and theoretically has great application potential in the field of conductive materials. However, in practical application, graphene also exposes some of the problems to be solved. On one hand, strong van der Waals force exists between graphene sheets, so that the graphene is easy to agglomerate. The specific surface area of the agglomerated graphene is greatly reduced, and the conductive path inside the agglomerated graphene is destroyed, so that the conductive performance is obviously reduced. When the graphene is compounded with other materials, the agglomerated graphene is difficult to uniformly disperse, and cannot form good interface bonding, so that the overall performance of the composite material is affected, and the large-scale application of the composite material in various fields is limited. On the other hand, although graphene itself has excellent conductivity, in some specific application scenarios, such as when preparing a conductive composite material by compounding with a polymer matrix, the compatibility between graphene and polymer is poor. Because of the large difference between the chemical structure and the physical property, the graphene is difficult to uniformly disperse in the polymer matrix, the interfacial binding force between the graphene and the polymer is weak, and the graphene is easy to peel off in the stress or use process, so that the conductive performance and the mechanical performance of the composite material are unstable, and the requirements of practical application cannot be met. Disclosure of Invention In order to solve the problems, the invention provides modified conductive graphene, and a preparation method and application thereof. In a first aspect, the invention provides a preparation method of modified conductive graphene, comprising the following steps: Adding aluminum-silicon alloy powder into alkaline solution to perform a first stirring reaction, and then washing and drying to obtain a first silicon carrier; Heating the first silicon carrier and magnesium powder in an inert gas atmosphere for reaction, and then carrying out acid washing and drying to obtain a second silicon carrier; immersing the second silicon carrier in a nickel-containing solution, and then drying and reducing to obtain a third silicon carrier; Depositing a graphene layer on the surface of the third silicon carrier by adopting a chemical vapor deposition mode to obtain first graphene; and immersing the first graphene into a PAMAM ethanol solution to perform a second stirring reaction, so as to obtain the modified conductive graphene. Further, the step of adding the aluminum-silicon alloy powder into an alkaline solution to perform a first stirring reaction, and then washing and drying to obtain a first silicon carrier comprises the following steps: and adding the aluminum-silicon alloy powder into a NaOH solution with the concentration of 1-1.5 mol/L, reacting for 2-3 hours at 80-90 ℃, washing to be neutral, and drying in vacuum to obtain the first silicon carrier. Further, the mass fraction of Al in the aluminum-silicon alloy powder is 27% -35%, the particle size of the aluminum-silicon alloy powder is 2% -5 μm, and the mass ratio of the aluminum-silicon alloy powder to the NaOH solution is 1 (10% -15). Further, the steps of heating the first silicon carrier and magnesium powder in an inert gas atmosphere for reaction, then carrying out acid washing and drying to obtain a second silicon carrier comprise the following steps: And (3) carrying out heating reaction on the first silicon carrier and the magnesium powder with the mass ratio of 1 (2-3) at the temperature of 600-680 ℃ for 3-5 h in an argon atmosphere, adding 1mol/L