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CN-121983374-A - TCO film and preparation method thereof

CN121983374ACN 121983374 ACN121983374 ACN 121983374ACN-121983374-A

Abstract

The invention belongs to the field of photoelectric devices, and particularly discloses a TCO film and a preparation method thereof, wherein the TCO film comprises a substrate, a first silicon oxide layer, a first indium oxide layer, a transition layer, a second indium oxide layer and a second silicon oxide layer which are sequentially arranged from bottom to top; the transition layer comprises an indium oxide layer, a silicon oxide layer and an indium oxide layer which are sequentially arranged from bottom to top. The distribution of the indium oxide layer, the silicon oxide layer and the transition layer is controlled, the silicon oxide layer with low refractive index and the indium oxide layer with high refractive index are alternately arranged, fresnel reflection is reduced through interface refractive index gradual change, the photovoltaic cell is suitable for a front electrode of the photovoltaic cell, and photoelectric conversion efficiency of the photovoltaic cell is improved.

Inventors

  • HE KAI
  • Huang Nengzhou
  • ZHOU ZICHAO

Assignees

  • 广东先导稀材股份有限公司

Dates

Publication Date
20260505
Application Date
20251224

Claims (10)

  1. 1. A TCO film is characterized by comprising a substrate, a first silicon oxide layer, a first indium oxide layer, a transition layer, a second indium oxide layer and a second silicon oxide layer which are sequentially arranged from bottom to top, wherein the transition layer comprises an indium oxide layer, a silicon oxide layer and an indium oxide layer which are sequentially arranged from bottom to top.
  2. 2. The TCO film of claim 1 where the substrate is any one of glass, quartz, and plastic, and the thickness of the substrate is 500 to 700 μm; The thickness of the first silicon oxide layer and the second silicon oxide layer is 15-30 nm independently; The thickness of the first indium oxide layer and the second indium oxide layer is 25-35 nm independently; The thickness of the indium oxide layer in the transition layer is 0.75-1.5 nm independently, the thickness of the silicon oxide layer in the transition layer is 0.5-1 nm, and the total thickness of the transition layer is 2-5 nm.
  3. 3. The TCO film of claim 1 or 2 where barium is doped in the first silicon oxide layer, the second silicon oxide layer, and the silicon oxide layer in the transition layer, and the doping amount of the barium is 0.15-0.25 wt%; tin is doped in the indium oxide layers in the first indium oxide layer, the second indium oxide layer and the transition layer, and the doping amount of tin is 10-11wt%.
  4. 4. The TCO film according to claim 1 or 2 where the first and second silicon oxide layers have a resistance of 1 x 10 5 ~5×10 6 Ω/sq and a carrier mobility of 1 x 10 -3 ~1×10 -2 cm 2 /(v·s); The resistance of the first indium oxide layer and the second indium oxide layer is 28-45 omega/sq, and the carrier mobility is 15-40 cm 2 /(V.s); The resistance of the indium oxide layer in the transition layer is 30-50 omega/sq, and the carrier mobility is 12-35 cm 2 /(V.s); The silicon oxide layer in the transition layer had a resistance of 8×10 4 ~3×10 6 Ω/sq and a carrier mobility of 5×10 -4 ~8×10 - 3 cm 2 /(v·s).
  5. 5. A method for preparing a TCO film comprising: step 1, depositing a first silicon oxide layer on the surface of a substrate by adopting a magnetron sputtering process; step 2, depositing a first indium oxide layer on the surface of the first silicon oxide layer by adopting a magnetron sputtering process; Step 3, depositing a transition layer on the surface of the first indium oxide layer by adopting a magnetron sputtering process, and sequentially depositing an indium oxide layer, a silicon oxide layer and an indium oxide layer from bottom to top when depositing the transition layer; And 4, sequentially depositing a second indium oxide layer and a second silicon dioxide layer on the surface of the transition layer by adopting a magnetron sputtering process.
  6. 6. The method according to claim 5, wherein in the step 1, the first silicon oxide layer is deposited in a mixed gas of oxygen and argon, wherein the flow rate of the argon is 300-400 sccm, the flow rate of the oxygen is 0-100 sccm, the deposition temperature is 25-100 ℃, the deposition pressure is 0.5-0.6 Pa, the radio frequency power is 5.5-6 kW, the radio frequency is 15-25 kHz, and the deposition rate is 1.0-1.5 nm/s.
  7. 7. The method according to claim 5 or 6, wherein in the step 2, when the first indium oxide layer is deposited, the deposition atmosphere is a mixture of oxygen and argon, the oxygen in the deposition atmosphere is 1vol% -2.5 vol%, the rest is argon, the deposition temperature is 25-75 ℃, the deposition pressure is 0.5-0.65 pa, the radio frequency power is 5.5-6.5 kw, and the deposition rate is 4.29-5.25 nm/s.
  8. 8. The method according to claim 5, wherein in the step 3, the deposition atmosphere is a mixture of oxygen and argon, the oxygen in the deposition atmosphere is 0.5vol% -0.8 vol%, the rest is argon, the deposition temperature is 25-75 ℃, the deposition pressure is 0.5-0.6 Pa, the radio frequency power is 5.5-6.5 kW, and the deposition rate is 4.5-4.85 nm/s.
  9. 9. The method for preparing a TCO film according to claim 5 or 8, wherein in the step 3, the deposition atmosphere is a mixture of oxygen and argon, the flow rate of argon is 300-400 sccm, the flow rate of oxygen is 0-100 sccm, the deposition temperature is 25-100 ℃, the deposition pressure is 0.55-0.65 Pa, the radio frequency power is 5.5-6.5 kW, the radio frequency is 15-25 kHz, and the deposition rate is 1-2 nm/s.
  10. 10. The method for preparing the TCO film according to claim 5, wherein the method further comprises the steps of preprocessing the substrate before the step 1, and sequentially performing ultrasonic cleaning in acetone, absolute ethyl alcohol and deionized water for 20-40 min; In the step 4, the technological parameters of depositing the second indium oxide layer are the same as those of depositing the first indium oxide layer in the step 1; And 4, an annealing process is further included, and the thin film material prepared in the step3 is placed in an air atmosphere for annealing at 200-230 ℃ for 50-70 min.

Description

TCO film and preparation method thereof Technical Field The invention belongs to the field of photoelectric devices, and relates to a transparent conductive film, in particular to a TCO film and a preparation method thereof. Background Transparent Conductive Oxide (TCO) films are widely used in the field of optoelectronic devices such as flat panel displays, solar cells, touch screens, etc., due to their good electrical conductivity and high light transmittance in the visible range. With the continuous improvement of the performance requirements of the photoelectric devices, higher requirements are put on the photoelectric performance of the TCO film. However, although the single TCO film commonly used at present has transparent conductive properties, because there is a significant refractive index mutation between the refractive index of indium oxide (refractive index is 1.9-2.0), air (refractive index is about 1), and the battery substrate (refractive index is about 3.5) such as a silicon substrate, fresnel reflection (reflection loss of light at interfaces with different refractive indexes) may occur, so that part of visible light (350-750 nm, the photovoltaic cell mainly absorbs the wave band) is reflected and lost, and cannot participate in energy conversion, and the electrical conversion efficiency of the photovoltaic cell is affected. Disclosure of Invention In order to overcome the defects and shortcomings of the prior art, the invention provides a TCO film in a first aspect and a preparation method of the TCO film in a second aspect. In a first aspect, the invention provides a TCO film, which comprises a substrate, a first silicon oxide layer, a first indium oxide layer, a transition layer, a second indium oxide layer and a second silicon oxide layer which are sequentially arranged from bottom to top, wherein the transition layer comprises an indium oxide layer, a silicon oxide layer and an indium oxide layer which are sequentially arranged from bottom to top. Preferably, the thickness of the indium oxide layer in the transition layer is 0.75-1.5 nm independently, the thickness of the silicon oxide layer in the transition layer is 0.5-1 nm, and the total thickness of the transition layer is 2-5 nm. Preferably, the substrate is any one of glass, quartz and plastic, and the thickness of the substrate is 500-700 μm. Preferably, barium is doped in the silicon oxide layers in the first silicon oxide layer, the second silicon oxide layer and the transition layer, and the doping amount of the barium is 0.15-0.25wt%. Preferably, tin is doped in the indium oxide layers in the first indium oxide layer, the second indium oxide layer and the transition layer, and the doping amount of tin is 10-11wt%. Preferably, the thickness of the first silicon oxide layer and the second silicon oxide layer is 15-30 nm independently. Preferably, the thickness of the first indium oxide layer and the second indium oxide layer is 25-35 nm independently. Preferably, the first silicon oxide layer and the second silicon oxide layer have a resistance of 1×10 5~5×106 Ω/sq, a carrier mobility of 1×10 -3~1×10-2cm2/(v·s), the first indium oxide layer and the second indium oxide layer have a resistance of 28 to 45 Ω/sq, a carrier mobility of 15 to 40cm 2/(v·s), the indium oxide layer in the transition layer has a resistance of 30 to 50 Ω/sq, a carrier mobility of 12 to 35cm 2/(v·s), and the silicon oxide layer in the transition layer has a resistance of 8×10 4~3×106 Ω/sq, and a carrier mobility of 5×10 -4~8×10-3cm2/(v·s). In a third aspect, the present invention provides a method for preparing a TCO film, including: step 1, depositing a first silicon oxide layer on the surface of a substrate by adopting a magnetron sputtering process; step 2, depositing a first indium oxide layer on the surface of the first silicon oxide layer by adopting a magnetron sputtering process; Step 3, depositing a transition layer on the surface of the first indium oxide layer by adopting a magnetron sputtering process, and sequentially depositing an indium oxide layer, a silicon oxide layer and an indium oxide layer from bottom to top when depositing the transition layer; and 4, repeating the steps 1-2, and sequentially depositing a second indium oxide layer and a second silicon dioxide layer. Preferably, the step 1 is preceded by a pretreatment of the substrate, and ultrasonic cleaning is sequentially carried out in acetone, absolute ethyl alcohol and deionized water for 20-40 min. Preferably, in the step 1, when the first silicon oxide layer is deposited, the deposition atmosphere is a mixed gas of oxygen and argon, the flow rate of the argon is 300-400 sccm, the flow rate of the oxygen is 0-100 sccm, the deposition temperature is 25-100 ℃, the deposition pressure is 0.5-0.6 Pa, the radio frequency power is 5.5-6 kW, the radio frequency is 15-25 kHz, and the deposition rate is 1.0-1.5 nm/s. Preferably, in the step 2, when the first indium oxide layer is dep