CN-121983402-A - Preparation method of temperature sensor array and temperature sensor array

CN121983402ACN 121983402 ACN121983402 ACN 121983402ACN-121983402-A

Abstract

The invention discloses a preparation method of a temperature sensor array and the temperature sensor array, wherein a patterning groove structure is prepared and formed on one side of a substrate by adopting a nano imprinting technology, a sensing unit preparation area in the patterning groove structure comprises a plurality of first grooves, a connecting line area comprises a plurality of second grooves, and a wire arrangement area comprises a plurality of third grooves. The first groove is filled with a material to form a temperature sensor in the sensing unit preparation area, and the second groove is filled with a material to prepare a connecting line in the connecting line area. And filling materials in the third groove to prepare a plurality of wire arrangement structures in the wire arrangement region, wherein connecting wires are respectively connected with the temperature sensor and the wire arrangement structures to form a temperature sensor array. The invention adopts the nanoimprint technology to form the micron-sized patterned groove structure, so that the line width is small, the line width deviation is small, the high-consistency preparation is realized, in addition, the line density is high, the connecting line, the temperature sensor and the flat cable structure are integrally prepared, and the high-density layout is realized.

Inventors

MENG XIUQING
ZHUANG JINYONG
MENG XIANQIANG

Assignees

光显印科技(南通)有限公司

Dates

Publication Date: 20260505
Application Date: 20260407

Claims (10)

1. A method of manufacturing a temperature sensor array, the method comprising: Providing a substrate; Preparing and forming a patterned groove structure on one side of the substrate by adopting a nanoimprint technology, wherein the patterned groove structure comprises a flat cable area, a plurality of sensing unit preparation areas and a plurality of connecting line areas, the sensing unit preparation areas comprise a plurality of first grooves, the connecting line areas comprise a plurality of second grooves, and the flat cable area comprises a plurality of third grooves; Filling material in the first groove to form a temperature sensor in the sensing unit preparation area; filling material in the second groove to prepare a connecting wire in the connecting wire area; and filling materials in the third groove to prepare a plurality of wire arrangement structures in the wire arrangement region, wherein the connecting wires are respectively connected with the temperature sensor and the wire arrangement structures to form the temperature sensor array.
2. The method of manufacturing according to claim 1, wherein the sensing unit manufacturing area comprises Wen Minou, the Wen Minou comprises a plurality of first groove sections, the plurality of first groove sections extend in a first direction, and the plurality of first groove sections are in alternating communication in a second direction, wherein the first direction intersects the second direction; Filling material in the first recess to form a temperature sensor in the sensing unit preparation area comprises: and filling temperature-sensitive materials in the first groove subsection to prepare a first Wen Minxian, and alternately and electrically connecting a plurality of first Wen Minxian along the second direction to form a temperature-sensitive structure.
3. The method of manufacturing according to claim 2, wherein the sensing unit manufacturing region further comprises a first electrode manufacturing region and a second electrode manufacturing region, the first electrode manufacturing region and the second electrode manufacturing region being located on both sides of Wen Minou, the first electrode manufacturing region and the second electrode manufacturing region each comprising a plurality of second groove sections; filling material in the first groove to form a temperature sensor in the sensing unit preparation area further comprises: and filling a first conductive material in the second groove subsection so as to respectively prepare a first electrode structure and a second electrode structure forming the temperature sensor at two sides of the temperature sensitive structure, wherein the temperature sensitive structure is respectively and electrically connected with the first electrode structure and the second electrode structure.
4. The method of manufacturing according to claim 2, wherein the sensing unit manufacturing region further comprises a first calibration region comprising a plurality of third groove segments; after filling the temperature sensitive material in the first groove subsection to prepare and form the first Wen Minxian, the method further comprises the following steps: And filling second conductive materials in the third groove subsection to prepare first regulation subsections, wherein a plurality of the first regulation subsections are alternately and electrically connected along the first direction to form a plurality of first regulation structures, the first regulation structures are all arranged in parallel with the temperature-sensitive structure, and the first regulation structures are arranged in parallel, wherein the number of turns in series of the first regulation subsections or the extension length of the first regulation subsections is in direct proportion to the corresponding regulation resistance value of the first regulation structure.
5. The method according to claim 2, wherein, The sensing unit preparation area further comprises a second resistance correction area, and the second resistance correction area comprises a plurality of fourth groove subsections; after filling the temperature sensitive material in the first groove subsection to prepare and form the first Wen Minxian, the method further comprises the following steps: And the fourth groove subsection is filled with a second conductive material to prepare a second regulation subsection, the second regulation subsections are connected in parallel to form a plurality of second regulation structures, the second regulation structures are connected in series with the temperature-sensitive structure, and the number of turns in parallel of the second regulation subsection is inversely proportional to the regulation resistance corresponding to the second regulation structure.
6. The method according to claim 2, wherein, Filling temperature sensitive materials in the first groove subsection to prepare a first temperature sensitive wire comprises the following steps: preparing a first sub-layer in the first groove part in a blade coating mode; and preparing a second sub-layer and a third sub-layer on one side of the first sub-layer far away from the substrate in an electroplating mode.
7. The method according to claim 6, wherein, The material of the first sub-layer comprises at least one of conductive metal nano particles, nanowire materials, bulk metals, carbon powder, conductive polymers, carbon nanotubes, graphene or MXene; The materials of the second sub-layer and the third sub-layer comprise one of silver, copper, nickel, platinum or gold.
8. The method according to claim 2, wherein, The depth of the first groove subsection is D1, and D1 is more than or equal to 1 mu m and less than or equal to 50 mu m; The width of the first groove part is L1, and L1 is more than or equal to 1 mu m and less than or equal to 50 mu m; the distance between every two adjacent first groove sections is D2, and D2 meets the requirement that D2 is more than or equal to 1 mu m.
9. The method according to claim 1, wherein, The area of the temperature sensor is S1, and S1 is equal to or less than 5mm multiplied by 5 mm; The thickness of the temperature sensor is D3, and D3 is D3<10 mu m.
10. A temperature sensor array produced by the method of any one of claims 1 to 9.

Description

Preparation method of temperature sensor array and temperature sensor array Technical Field The invention relates to the technical field of temperature sensors, in particular to a preparation method of a temperature sensor array and the temperature sensor array. Background In the field of temperature sensors, positive Temperature Coefficient (PTC) thermal resistors are widely used in the fields of high-end laboratory equipment, thermostated containers, high-precision measurement of industrial processes and the like due to the advantages of high precision, good stability, good linearity and the like. Currently, conventional manufacturing processes of PTC temperature sensors mainly include wire-wound, MEMS (micro electro mechanical system) processes and conventional printing methods. In the prior art, the wire winding process is difficult to realize high-density and miniaturized array layout. The MEMS technology has the rapid rise of manufacturing cost caused by high equipment cost and high technology complexity during the array. And the array connecting wire prepared by the MEMS technology has large resistance, so that the integration degree of the temperature sensor is low. The conventional printing rule has difficulty in ensuring consistency and reliability among array units due to resolution and uniformity limitations. Thus, at present, although there are a great deal of patent documents related to thin film devices, most of them remain in the theoretical or laboratory stage and are difficult to be converted into products of practical application value. For this reason, although some schemes provide functional characteristics such as a temperature response curve, in a specific implementation process, the device is often limited by factors such as insufficient processing precision and limited material performance, so that it is difficult to meet requirements of high precision, high stability and good repeatability. In addition, due to the limitations of technology and materials, the prior art is difficult to realize the refinement of the structure, the miniaturization of devices and the high-density integration of the system, thereby restricting the popularization and the application of the device in actual industrial scenes. Disclosure of Invention The invention provides a preparation method of a temperature sensor array and the temperature sensor array, which adopts a nano-imprinting technology to form a micron-sized patterned groove structure, so that the line width is small, the line width deviation is small, the high-consistency preparation is realized, in addition, the line density is high, the connecting line, the temperature sensor and the flat cable structure are integrally prepared, and the high-density layout is realized. In a first aspect, an embodiment of the present invention provides a method for preparing a temperature sensor array, where the method includes: Providing a substrate; Preparing and forming a patterned groove structure on one side of the substrate by adopting a nanoimprint technology, wherein the patterned groove structure comprises a flat cable area, a plurality of sensing unit preparation areas and a plurality of connecting line areas, the sensing unit preparation areas comprise a plurality of first grooves, the connecting line areas comprise a plurality of second grooves, and the flat cable area comprises a plurality of third grooves; Filling material in the first groove to form a temperature sensor in the sensing unit preparation area; filling material in the second groove to prepare a connecting wire in the connecting wire area; and filling materials in the third groove to prepare a plurality of wire arrangement structures in the wire arrangement region, wherein the connecting wires are respectively connected with the temperature sensor and the wire arrangement structures to form the temperature sensor array. Optionally, the sensing unit preparation area includes Wen Minou, the Wen Minou includes a plurality of first groove sections, the plurality of first groove sections extend along a first direction, and the plurality of first groove sections are alternately communicated along a second direction, wherein the first direction intersects the second direction; Filling material in the first recess to form a temperature sensor in the sensing unit preparation area comprises: and filling temperature-sensitive materials in the first groove subsection to prepare a first Wen Minxian, and alternately and electrically connecting a plurality of first Wen Minxian along the second direction to form a temperature-sensitive structure. Optionally, the sensing unit preparation area further includes a first electrode preparation area and a second electrode preparation area, the first electrode preparation area and the second electrode preparation area are located at two sides of Wen Minou, and each of the first electrode preparation area and the second electrode preparation area includes a