CN-121983428-A - Semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for capacitor and preparation method thereof

CN121983428ACN 121983428 ACN121983428 ACN 121983428ACN-121983428-A

Abstract

A semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for a capacitor and a preparation method thereof relate to the technical field of dielectric capacitors. The invention aims to solve the problems of low medium energy storage density and charging and discharging efficiency and obvious energy storage performance degradation in a high-temperature environment in the prior art. A semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for a capacitor is an inorganic filling phase filling modified polymer of a semiconductor core-shell structure. The preparation method comprises the steps of uniformly mixing the inorganic filling phase of the semiconductor core-shell structure with the polymer through a solution method, and preparing the composite dielectric film through a knife coating method. The application of the semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for the capacitor in the capacitor has higher energy storage and polarization performance and smaller leakage current density, and opens up a new way for medium-high temperature energy storage dielectric.

Inventors

CHI QINGGUO
YIN CHAO
WANG XUBIN
WANG HONGBO
ZHANG YUE
WANG YUE
ZHANG TIANDONG
ZHANG CHANGHAI
CHU SONGCHAO
XIANG YANXIONG
CHEN WEIWEI

Assignees

哈尔滨理工大学
安徽铜峰电子股份有限公司
厦门法拉电子股份有限公司
南通新江海动力电子有限公司

Dates

Publication Date: 20260505
Application Date: 20260316

Claims (10)

1. A semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for a capacitor is characterized in that the dielectric is a semiconductor core-shell structure inorganic filling phase filling modified polymer; The inorganic filling phase of the semiconductor core-shell structure is 0.25BiFeO 3 -0.3BaTiO 3 -0.45SrTiO 3 ferroelectric ceramic coated ZnO; The polymer is polyethersulfone.
2. The semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for the capacitor, which is disclosed in claim 1, is characterized in that the molecular weight of polyethersulfone is 10000 g/mol-400000 g/mol, and the thickness of the 0.25BiFeO 3 -0.3BaTiO 3 -0.45SrTiO 3 ferroelectric ceramic wrapped ZnO is 10 nm-100 nm.
3. The semiconductor core-shell structure filled phase optimized polyethersulfone dielectric for capacitors of claim 1, wherein the doping amount of the semiconductor core-shell structure inorganic filled phase in the application of the semiconductor core-shell structure filled phase optimized polyethersulfone dielectric for capacitors is 0.5-3 wt%.
4. The semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for the capacitor of claim 1, wherein the preparation method of the semiconductor core-shell structure inorganic filling phase is specifically completed by the following steps: ① . Dispersing 0.25BiFeO 3 -0.3BaTiO 3 -0.45SrTiO 3 ferroelectric ceramic particles in absolute ethyl alcohol to obtain 0.1-0.8 mol/L of dispersion liquid X; ② . Adding zinc acetate into the dispersion liquid X, and stirring in a constant-temperature water bath at 40-100 ℃ for 5-15 h to obtain a dispersion liquid Y; the volume ratio of the zinc acetate to the dispersion liquid X in the step ② is (0.01 g-0.2 g) 1mL; ③ . Centrifugally washing the dispersion liquid Y for 2-4 times at the rotating speed of 2000-4000 r/min to obtain a solid precipitate Z; ④ . And (3) placing the solid precipitate Z in a constant temperature oven, drying at 60-100 ℃ for 6-12 hours, grinding, then placing in a muffle furnace, setting a program, namely raising the temperature from room temperature to 400 ℃ within 1 hour, raising the temperature to 600 ℃ at a temperature raising speed of 80-100 ℃ per hour, keeping the temperature at 600 ℃ for 1-3 hours, cooling to the room temperature along with the furnace, and grinding to obtain the semiconductor core-shell structure inorganic filling phase.
5. A semiconductor core-shell structured packing phase optimized polyethersulfone dielectric for capacitors as recited in claim 1, wherein said dielectric has a thickness of 5 μm to 30 μm.
6. The method for preparing the semiconductor core-shell structure filled phase optimized polyether sulfone dielectric for the capacitor, as claimed in claim 1, is characterized in that the method for preparing the semiconductor core-shell structure filled phase optimized polyether sulfone dielectric for the capacitor comprises the steps of uniformly mixing a semiconductor core-shell structure inorganic filled phase and a polymer through a solution method, and preparing the semiconductor core-shell structure filled phase optimized polyether sulfone dielectric for the capacitor through a knife coating method.
7. The preparation method of the semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for the capacitor, which is characterized by comprising the following steps: 1. dispersing the inorganic filling phase of the semiconductor core-shell structure into a solvent, and performing ultrasonic dispersion to obtain a dispersion liquid W; 2. dispersing polyethersulfone into a dispersion liquid W, and stirring to obtain a dispersion liquid L; 3. Placing the dispersion liquid L into a vacuum drying oven, maintaining the pressure at room temperature under the condition that the vacuum degree is-10 to-80 kPa, and removing bubbles in the dispersion liquid L to obtain a dispersion liquid M after bubble removal; 4. pouring the dispersion M on a clean glass plate, and preparing a prefabricated wet film N by adopting a knife coating method; 5. Placing the prefabricated wet film N in a constant temperature oven, and drying to obtain a film P; 6. transferring the film P into a vacuum drying oven, drying for 8-24 h by adopting a gradient heating heat treatment process, naturally cooling to room temperature, putting the glass plate into deionized water, naturally falling the film from the glass plate, and finally putting the film into the vacuum drying oven to completely remove water to obtain the semiconductor core-shell structure filling phase optimized polyether sulfone dielectric for the capacitor.
8. The preparation method of the semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for the capacitor, which is disclosed in claim 7, is characterized in that the solvent in the first step is N, N-dimethylformamide, N-dimethylacetamide or N-methylpyrrolidone, the ultrasonic dispersion time in the first step is 30-60 min, and the concentration of the dispersion liquid W in the first step is 0.001-0.01 g/mL.
9. The preparation method of the semiconductor core-shell structure filling phase optimized polyether sulfone dielectric for the capacitor, which is characterized by comprising the steps of stirring for 12-24 hours, drying for 2 hours at 100 ℃ and drying for 2 hours at 150 ℃ in a dispersing liquid L, and drying for 2 hours at 200 ℃ in a mass ratio of the semiconductor core-shell structure inorganic filling phase to the polymer (0.1-10): 100 in the dispersing liquid L, wherein the concentration of the polyether sulfone in the dispersing liquid L is 0.1-0.5 g/mL, drying for 6-24 hours at 50-100 ℃, and the gradient heat treatment process is adopted in the step five.
10. The method for preparing the semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for the capacitor, which is characterized by comprising the step of applying the semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for the capacitor to the capacitor.

Description

Semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for capacitor and preparation method thereof Technical Field The invention relates to the technical field of dielectric capacitors, in particular to a semiconductor core-shell structure filling phase optimized polyether sulfone dielectric for a capacitor and a preparation method thereof. Background As the demand for energy storage continues to increase, optimization of energy storage device performance has become a hotspot in current research. The dielectric film has wide application in capacitors and other energy storage devices due to excellent dielectric properties and high energy density, and has important significance for further improving the performance. Polyether sulfone (PESU) is used as a high-performance amorphous polymer, and the balanced dielectric property, excellent thermal stability and good processing property are utilized to effectively make up for the performance short plates of the traditional polysulfone dielectric materials, so that the inherent limitations of the conventional dielectric materials in high-temperature stability and high-pressure tolerance are broken through. At present, PESU has shown wide application prospect in the fields of high-end dielectric films, high-voltage energy storage devices and the like, and along with the continuous iteration of modification technology, the polarization intensity and the energy storage density of the PESU are further improved, and the PESU is expected to gradually replace traditional dielectric materials in the future, so that the dielectric energy storage technology is promoted to develop towards the directions of high efficiency, stability, high temperature resistance and low loss, and core material support is provided for technology upgrading in the fields of flexible energy storage, new energy equipment and the like. Disclosure of Invention The invention aims to solve the problems of low medium energy storage density and low charge-discharge efficiency and obvious energy storage performance degradation in a high-temperature environment in the prior art, and provides a semiconductor core-shell structure filling phase optimized polyether sulfone dielectric for a capacitor and a preparation method thereof. The invention provides a method for enhancing energy storage performance of a buffer interface of a semiconductor core-shell structure inorganic filling phase (BF-BT-ST@Z) and polyether sulfone (PESU). According to the invention, 0.25BiFeO 3-0.3BaTiO3-0.45SrTiO3 ferroelectric ceramic (BF-BT-ST) is used for wrapping ZnO to prepare the semiconductor core-shell structure inorganic filling phase (BF-BT-ST@Z), and then the semiconductor core-shell structure inorganic filling phase is compounded with polyether sulfone (PESU), so that the influence of the inorganic filling phase on the PESU composite system structure and performance is explored, and meanwhile, the high-temperature energy storage stability of the PESU composite dielectric medium is improved, and the energy storage density and the charge-discharge efficiency of the PESU-based dielectric film in a medium-high-temperature environment are effectively improved, so that the comprehensive energy storage performance of the PESU-based dielectric film is remarkably improved. The invention can obviously improve the medium-high temperature energy storage density and the charge-discharge efficiency of the PESU-based composite dielectric film. A semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for a capacitor is an inorganic filling phase filling modified polymer of a semiconductor core-shell structure; The inorganic filling phase of the semiconductor core-shell structure is 0.25BiFeO 3-0.3BaTiO3-0.45SrTiO3 ferroelectric ceramic coated ZnO; The polymer is polyethersulfone. A method for preparing a semiconductor core-shell structure filling phase optimized polyethersulfone dielectric for a capacitor comprises the steps of uniformly mixing a semiconductor core-shell structure inorganic filling phase with a polymer through a solution method, and preparing a composite dielectric film through a knife coating method. The invention has the beneficial effects that: 1. the invention designs a semiconductor core-shell structure filling phase optimized polyethersulfone dielectric (BF-BT-ST@Z/U film) for a capacitor, which opens up a new way for medium and high temperature energy storage dielectric because the semiconductor core-shell structure filling phase optimized polyethersulfone dielectric film has higher energy storage and polarization performance and smaller leakage current density at medium and high temperature compared with unmodified polyethersulfone; 2. The semiconductor core-shell structure filling phase optimization polyethersulfone dielectric film prepared by the experiment can effectively improve the energy storage performance of the polymer at medium and high te