CN-121983484-A - Micro-electro-optical quantum digital micro-optical device and packaging method thereof

Abstract

The application discloses a micro-electro-optical quantum digital micro-light device and a packaging method thereof, wherein the micro-electro-optical quantum digital micro-light device comprises a cathode, a tube shell precursor and a tube shell rear body, MCP is packaged in the tube shell precursor, a CMOS circuit is arranged in the tube shell rear body, an HTCC base is arranged on a plug-in end of the tube shell rear body, when in use, voltages are respectively applied to the cathode, an MCP input, an MCP output and an electrode of the CMOS circuit, and the pressure difference between any two adjacent electrodes is 50-3000V.

Inventors

• JI RONGBIN
• DENG HUABING
• ZHOU KAICHAO
• WU JIE
• ZHONG XIAOJIAO
• GUAN YUJUAN
• ZHANG CHUNXIAN
• NI YONGHAI
• LUO JUNTAO
• Gong Yangyun
• YANG JINBANG
• YAO LIBIN
• HE FUJUN
• LI YAOBIN
• ZHAO HENG
• DONG YONGFA
• ZHANG XIN
• ZHANG SHICHAO
• LI YAQING
• RUAN JIANMING

Assignees

• 北方夜视技术股份有限公司

Dates

Publication Date

20260505

Application Date

20260210

Claims (10)

1. 1. A micro-electro-optical quantum digital micro-optical device is characterized by comprising a cathode, a tube shell precursor and a tube shell rear body; The MCP is encapsulated in the shell body front body, and the CMOS circuit is arranged in the shell body rear body; An HTCC base is arranged on the plug-in end of the shell rear body; when the voltage source is used, voltages are respectively applied to the cathode, the MCP input, the MCP output and the electrode of the CMOS circuit, and the voltage difference between any two adjacent electrodes is 50-3000V; The cathode is used for receiving photoelectrons generated after irradiation, the MCP is used for electronically gaining the obtained photoelectron signals, and the CMOS is used for electronically reading out and generating digital signals of images.
2. 2. The micro-electro-mechanical light quantum digital micro-optical device according to claim 1, wherein the micro-electro-mechanical light quantum digital micro-optical device can realize the output of digital images, the working illuminance is less than or equal to 10 -4 Lx, the frame frequency of the obtained images is more than or equal to 100 Hz, and the power consumption required by the operation of the device is less than or equal to 250 mW.
3. 3. The micro-electro-mechanical light quantum digital micro-optical device according to claim 1, wherein the cathode comprises a lens and a film, the film is arranged on the inner surface of the lens and near the tube shell precursor, the film material comprises multiple alkali, nano metal, quantum body and three-generation semiconductor, the coverage spectrum range comprises visible light, short wave infrared, terahertz and X-ray, and the film is used for generating electrons through an external broadcast and television effect in a low-illumination weak light environment.
4. 4. The micro-electro-mechanical quantum digital micro-optical device according to claim 3, wherein the front close-fitting distance between the cathode and the MCP input end in the shell precursor is 0-5 mm, and the MCP input end can be directly bonded or adhered on the film and the lens to realize the direct connection between the MCP input end and the cathode film, and the front close-fitting distance is 0mm.
5. 5. The micro-electro-mechanical quantum digital micro-optical device according to claim 1, wherein the shell precursor comprises an MCP, a cathode ring, a ceramic shell, an MCP clamping piece and a first isolating ring, wherein the MCP is encapsulated in the MCP clamping piece, and the upper end face and the lower end face of the MCP clamping piece are respectively electrically connected with the electrodes; A cathode ring is arranged on the first end face of the ceramic tube shell, and a cathode is encapsulated in the first end face of the ceramic tube shell; an electrode is arranged on the cathode ring and is electrically connected with the cathode; the second end face of the ceramic tube shell is provided with a first isolating ring.
6. 6. The micro-electro-mechanical quantum digital micro-optical device according to claim 1, wherein the shell rear body comprises a second isolation ring, an HTCC base and a CMOS circuit, wherein the CMOS circuit is arranged on the second isolation ring; The CMOS circuit comprises a metal area array electrode, a CMOS chip, a germanium-silicon chip, an indium gallium arsenic chip and the like.
7. 7. The micro-electro-mechanical light quantum digital micro-optical device according to claim 1, wherein the lens is made of glass, and the cathode sensitivity is 300-3000 uA/lm.
8. 8. The micro-electro-mechanical quantum digital micro-optical device according to claim 1, wherein the HTCC base comprises a pad and a plurality of pins, wherein a multilayer wiring is provided on an end surface of the pad, and the pad and the pins are connected through the multilayer wiring.
9. 9. The micro-electro-mechanical quantum digital micro-optical device according to claim 1, wherein the post-proximity distance between the CMOS circuit and the MCP output end is 0-5 mm; The MCP output end can be directly bonded or adhered on the CMOS circuit, the metal area array electrode and the like, so that the direct connection between the MCP output end and the CMOS circuit, the metal area array electrode and the like is realized, and the post-close-contact distance is 0mm.
10. 10. A method for packaging a micro-electro-mechanical quantum digital micro-optical device according to claim 1-9, comprising the steps of: Step S1, mounting a CMOS circuit and gold wire bonding on a shell rear body to obtain a first device; Step S2, completing the assembly of the MCP in the shell precursor to obtain a second device; Step S3, adopting helium gas to leak detect the first device and the second device respectively, wherein the vacuum degree of the first device and the second device is required to be less than or equal to 1E-5Pa; S4, welding a first isolating ring on the first device, welding a second isolating ring on the second device, and respectively carrying out helium leak detection, wherein the required air degree is less than or equal to 1E-5Pa, so as to obtain a third device and a shell rear body; step S5, vacuumizing to be less than or equal to 1E-5Pa, evaporating a cathode film on the inner surface of the lens to obtain a cathode, and packaging the cathode and a third device in a vacuum environment by using a solder welding method to obtain a shell precursor, wherein the cavity of the obtained shell precursor is in a vacuum state, and packaging the shell precursor and the shell rear body; And S6, setting electrodes at the cathode end, the MCP input end, the MCP output end and the CMOS circuit, which need to be applied with voltage, wherein the pressure difference between any two adjacent electrodes is 50-3000V, so as to obtain the micro-electro-mechanical light quantum detector, and the obtained applicable voltage of the micro-electro-mechanical light quantum detector comprises direct current and alternating current.

Description

Micro-electro-optical quantum digital micro-optical device and packaging method thereof Technical Field The application relates to the technical field of night vision equipment, in particular to a micro-electro-optical quantum digital micro-optical device and a packaging method thereof. Background The function requirement of the existing night vision equipment is to meet the use requirements of digitalization and informatization so as to realize information sharing and close coordination in various environments. Most of the existing low-light night vision devices use an image intensifier as a direct-view device, so that the transmission speed of an image and a video is severely limited, and the acquired image information cannot be transmitted in real time and in a long distance. The information disclosed in the background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art. Disclosure of Invention The application provides a micro-electro-optical quantum digital micro-light device and a packaging method thereof, which aims at the technical problems, adopts the technologies of photoelectric cathode electron generation, MCP electron gain and CMOS circuit electron readout, develops an electron readout circuit by using a standard CMOS process, replaces a fluorescent screen in the existing image intensifier, and realizes the digital readout of the micro-light device. The application provides a micro-electro-optical quantum digital micro-optical device, which comprises a cathode, a tube shell precursor and a tube shell rear body; The MCP is encapsulated in the shell body front body, and the CMOS circuit is arranged in the shell body rear body; An HTCC base is arranged on the plug-in end of the shell rear body; when the voltage source is used, voltages are respectively applied to the cathode, the MCP input, the MCP output and the electrode of the CMOS circuit, and the voltage difference between any two adjacent electrodes is 50-3000V; The cathode is used for receiving photoelectrons generated after irradiation, the MCP is used for electronically gaining the obtained photoelectron signals, and the CMOS is used for electronically reading out and generating digital signals of images. Preferably, the micro-electro-mechanical quantum digital micro-optical device can realize the output of digital images, the working illuminance is less than or equal to 10 -4 Lx, the frame frequency of the obtained images is more than or equal to 100 Hz, and the power consumption required by the operation of the device is less than or equal to 250 mW. Preferably, the cathode comprises a lens, a film, the film being disposed on an inner surface of the lens and disposed proximate the envelope precursor, the film for generating electrons by an external broadcast and television effect in a low-light dim environment. Preferably, the cathode is in a close-before-paste distance of 0.01-5 mm from the MCP input end in the shell precursor. Preferably, the shell precursor comprises an MCP, a cathode ring, a ceramic shell, an MCP clamping piece and a first isolating ring, wherein the MCP is packaged in the MCP clamping piece, and the upper end face and the lower end face of the MCP clamping piece are respectively and electrically connected with the electrodes; A cathode ring is arranged on the first end face of the ceramic tube shell, and a cathode is encapsulated in the first end face of the ceramic tube shell; an electrode is arranged on the cathode ring and is electrically connected with the cathode; the second end face of the ceramic tube shell is provided with a first isolating ring. Preferably, the shell back body comprises a second isolation ring, an HTCC base and a CMOS circuit, wherein the CMOS circuit is arranged on the second isolation ring, the second isolation ring is arranged on the HTCC base, and an electrode electrically connected with the CMOS circuit is arranged on the second isolation ring. Preferably, the lens is made of glass, and the cathode sensitivity is 300-3000 uA/lm. Preferably, the HTCC substrate comprises a pad and a plurality of pins, wherein the pad end face is provided with a plurality of layers of wiring, and the pad and the pins are connected through the plurality of layers of wiring. Preferably, the post-close-contact distance between the CMOS circuit and the MCP output end is between 0.01 and 5mm. The application also provides a packaging method of the micro-electro-mechanical light quantum digital micro-light device, which comprises the following steps: Step S1, mounting a CMOS circuit and gold wire bonding on a shell rear body to obtain a first device; Step S2, completing the assembly of the MCP in the shell precursor to obtain a second device; Step S3, adopting helium gas to leak detect the first device an