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CN-121983486-A - Beam magnetic field calibrating device and ion implantation equipment

CN121983486ACN 121983486 ACN121983486 ACN 121983486ACN-121983486-A

Abstract

The application relates to the technical field of semiconductor ion implantation, in particular to a beam magnetic field calibration device and ion implantation equipment. The beam magnetic field calibration device comprises an installation cavity with an opening at one side, an installation plate which is arranged at one side of the opening of the installation cavity and extends towards the direction away from the opening of the installation cavity, a magnetic field generation structure with one end installed in the installation cavity, and a position adjustment structure which is arranged at one side of the installation plate and deviating from the channel. The other end of the magnetic field generating structure extends away from the mounting cavity and has a passageway through the ion beam. One end of the position adjusting structure penetrates through the side wall of the mounting cavity and is connected to the magnetic field generating structure, and the position adjusting structure is in sealing connection with the mounting cavity. For moving the magnetic field adjustment structure along a curve to adapt the path of travel of the passageway and the ion beam. The application arranges the independent position adjusting structure on the magnetic field generating structure to move, so that the channel of the magnetic field generating structure can adapt to the moving paths of different ion beams. Because the mass analysis device is arc-shaped, when different kinds of ions are screened, and the formed ion beam is led out from the mass analysis device, the ion beam and the original channel are not parallel but form a certain angle position state, so that the channel of the magnetic field generation structure needs to be moved along a curve shape to enable the channel to be adapted to the moving path of the ion beam.

Inventors

  • CAO JIANWEI
  • SHEN WENJIE
  • HUANG JIANLI
  • YAO QINGYU
  • FENG GUODONG
  • MAO MIN

Assignees

  • 浙江求是创芯半导体设备有限公司

Dates

Publication Date
20260505
Application Date
20251230

Claims (10)

  1. 1. A beam magnetic field calibration device (3), characterized by comprising: A mounting cavity (100) having one side opened; The mounting plate (200) is arranged on one side of the opening of the mounting cavity (100) and extends towards the direction away from the opening of the mounting cavity (100); A magnetic field generating structure (300) having one end mounted in the mounting chamber (100), the other end extending away from the mounting chamber (100) and having a passageway (310) for passing an ion beam therethrough, and A position adjusting structure (400) arranged on one side of the mounting plate (200) away from the channel (310) and used for moving the magnetic field adjusting structure along a curve to adapt the channel (310) and the ion beam moving path; One end of the position adjusting structure (400) penetrates through the side wall of the mounting cavity (100) and is connected to the magnetic field generating structure (300), and the position adjusting structure (400) is connected with the mounting cavity (100) in a sealing mode.
  2. 2. The beam magnetic field calibration device (3) according to claim 1, characterized in that the position adjustment structure (400) comprises A first adjustment assembly (500) located on one side of the magnetic field generating structure (300) and driving the magnetic field generating structure (300) to move along a first direction; a second adjusting assembly (600) located at the opposite side of the magnetic field generating structure (300) and driving the magnetic field generating structure (300) to move along a second direction, and A driving member imparting a driving force to the movement of the first and second adjustment assemblies (500, 600); the included angle between the first direction and the second direction is between 120 degrees and 180 degrees.
  3. 3. The beam magnetic field calibration device (3) according to claim 2, characterized in that the first adjustment assembly (500) comprises A first connecting rod (510) having one end positioned in the installation cavity (100) and connected to the magnetic field generating structure (300) and the other end penetrating through the installation cavity (100), and The first moving block (520) is connected to one end of the first connecting rod (510) positioned outside the mounting cavity (100) and is connected to the mounting plate (200) in a sliding manner, and the sliding direction is limited to be a straight line where the first direction is; A first rotating member (521) is arranged between the first connecting rod (510) and the magnetic field generating structure (300) and/or between the first connecting rod (510) and the first moving block (520) and is used for adjusting the relative displacement of the magnetic field generating structure (300), the first connecting rod (510) and the first moving block (520) in the horizontal direction generated when the magnetic field generating structure (300) rotates along a curve; the second adjusting assembly (600) comprises A second connecting rod (610) having one end positioned in the mounting cavity (100) and connected to the magnetic field generating structure (300) and the other end passing through the mounting cavity (100), and The second moving block (620) is connected to one end of the second connecting rod (610) positioned outside the mounting cavity (100) and is connected to the mounting plate (200) in a sliding manner, and the sliding direction is limited to be a straight line in which the second direction is positioned; And a second rotating piece (621) is arranged between the second connecting rod (610) and the magnetic field generating structure (300) and/or between the second connecting rod (610) and the second moving block (620) and is used for adjusting the horizontal relative displacement generated among the magnetic field generating structure (300), the second connecting rod (610) and the second moving block (620) when the magnetic field generating structure (300) rotates along a curve.
  4. 4. A beam magnetic field calibration device (3) according to claim 3, characterized in that the first adjusting components (500) and the second adjusting components (600) on both sides of the magnetic field generating structure (300) are provided with two groups, two groups of the first adjusting components (500) are arranged in parallel with each other, and two groups of the second adjusting components (600) are arranged in parallel with each other.
  5. 5. The beam magnetic field calibration device (3) according to claim 2, characterized in that the driving members are selected as linear driving members (700), at least one of the linear driving members (700) being provided, the linear driving members (700) being connected to the first adjustment assembly (500) and/or the second adjustment assembly (600).
  6. 6. The beam magnetic field calibration device (3) according to claim 3, wherein a first corrugated pipe (511) and a second corrugated pipe (611) are respectively sleeved outside the first connecting rod (510) and outside the second connecting rod (610), one end of the first corrugated pipe (511) is fixed on the outer wall of the installation cavity (100), the other end of the first corrugated pipe is fixed on the first moving block (520), and one end of the second corrugated pipe (611) is fixed on the outer wall of the installation cavity (100), and the other end of the second corrugated pipe is fixed on the second moving block (620).
  7. 7. The beam magnetic field calibration device (3) according to claim 6, wherein the first rotational member (521) and the second rotational member (621) are each selected as a ball head, wherein the first rotational member (521) is connected between the first connecting rod (510) and the first moving block (520), and wherein the second rotational member (621) is connected between the second connecting rod (610) and the second moving block (620).
  8. 8. The beam magnetic field calibration device (3) according to claim 7, wherein the outer part of the first rotating member (521) and the outer part of the second rotating member (621) are respectively sleeved with a ball head sealing shell (800), and the first corrugated pipe (511) and the second corrugated pipe (611) are respectively fixed on the outer wall of the corresponding ball head sealing shell (800).
  9. 9. The beam magnetic field calibration device (3) according to claim 7, wherein a first extension portion (110) and a second extension portion (120) are arranged on the outer wall of the mounting cavity (100), the first extension portion (110) is sleeved outside the first connecting rod (510), the second extension portion (120) is sleeved outside the second connecting rod (610), the outer wall of one side of the first extension portion (110) away from the mounting cavity (100) is perpendicular to the first connecting rod (510), the first corrugated tube (511) is fixed on the outer wall of one side of the first extension portion (110) away from the mounting cavity (100), the outer wall of one side of the second extension portion (120) away from the mounting cavity (100) is perpendicular to the second connecting rod (610), and the second corrugated tube (611) is fixed on the outer wall of one side of the second extension portion (120) away from the mounting cavity (100).
  10. 10. An ion implantation apparatus, comprising An ion source for generating ions; an ion extraction system for directing ions to form an ion beam; a mass analysis device (1) for performing a preliminary screening of the ion beam; The beam current adjusting device (2) is used for re-screening the ion beam; the beam magnetic field alignment device (3) according to any of claims 1-9, for adjusting the width of the ion beam in the vertical direction.

Description

Beam magnetic field calibrating device and ion implantation equipment Technical Field The application relates to the technical field of semiconductor ion implantation, in particular to a beam magnetic field calibration device and ion implantation equipment. Background Ion implantation equipment is one of the key devices in semiconductor chip fabrication, and its core function is to implant ions of a specific kind and specific energy into a specific region of a wafer, thereby changing the electrical properties of that region. The ion implantation equipment mainly comprises an ion source and ion extraction system, a beam line transmission system, a target chamber and terminal system and a vacuum and control system. Ions generated by the ion source form ion beams with certain flow velocity through the ion extraction system, then the ion beams with specific types and specific energies are formed through screening of the beam transmission system and then are input into the target chamber, and the ion beams are injected into wafers in the target chamber. The beam line transmission system is a core part of the ion implantation equipment, and is used for purifying, accelerating and shaping the rough and mixed ion beam led out from the ion source and finally accurately and uniformly projecting the rough and mixed ion beam onto the surface of the wafer. The stability and accuracy of this process directly determine the three main core parameters of ion implantation, dopant species, implant energy, and implant uniformity. The beam entering the beam line transmission system needs to be screened out of specific types of beam through the mass analysis device, then the ion beam is screened out through the beam adjusting device, stray ions deviating from the orbit are removed, and then the width of the ion beam in the vertical direction is adjusted through the beam magnetic field calibrating device. However, the magnetic field position of the current beam magnetic field calibration device cannot be adaptively adjusted, and the moving paths of ion beams of different types screened by the mass analysis device are different, so that the magnetic field position cannot be adjusted according to the moving paths of the ion beams, and the adaptability of the ion implantation equipment is poor. Disclosure of Invention In order to solve the defects in the prior art, one of the purposes of the application is to provide a beam magnetic field calibration device which can independently adjust the magnetic field position according to the path of an ion beam and improve the suitability of the beam magnetic field calibration device for different ion beams. In order to achieve the above purpose, the application adopts the following technical scheme: a beam magnetic field calibration device and ion implantation equipment, comprising: A mounting cavity with an opening at one side; The mounting plate is arranged on one side of the mounting cavity opening and extends towards the direction away from the mounting cavity opening; a magnetic field generating structure having one end mounted in the mounting chamber and the other end extending away from the mounting chamber and having a passage for passing an ion beam therethrough, and The position adjusting structure is arranged on one side, away from the channel, of the mounting plate and is used for moving the magnetic field adjusting structure along a curve to enable the channel and the ion beam moving path to be adapted; One end of the position adjusting structure penetrates through the side wall of the mounting cavity and is connected to the magnetic field generating structure, and the position adjusting structure is in sealing connection with the mounting cavity. Through the arrangement, the independent position adjusting structure is arranged on the magnetic field generating structure to move, so that the channel of the magnetic field generating structure can adapt to the moving paths of different ion beams. Because the mass analysis device is in an arc-shaped arrangement, when different types of ions are screened, and the formed ion beam is led out from the mass analysis device, the ion beam and the original channel are not in a parallel position state but in a position state with a certain angle, so that the channel of the magnetic field generation structure needs to be moved along a curve shape to enable the width direction of the channel to be perpendicular to the moving path of the ion beam, and the channel can be adapted to the moving path of the ion beam. Preferably, the position adjustment structure comprises The first adjusting component is positioned on one side of the magnetic field generating structure and drives the magnetic field generating structure to move along a first direction; a second adjusting component which is positioned at one side opposite to the magnetic field generating structure and drives the magnetic field generating structure to move along a second direction, an