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CN-121983488-A - Rotary adjusting type ion beam etching uniformity correction structure

CN121983488ACN 121983488 ACN121983488 ACN 121983488ACN-121983488-A

Abstract

The invention discloses a rotation-adjusting type ion beam etching uniformity correction structure, which relates to the technical field of semiconductors and comprises a reaction cavity, wherein a first motor is fixedly arranged at the back surface of the reaction cavity, the output end of the first motor extends into the reaction cavity in a penetrating way, the output end of the first motor is fixedly connected with a carrier, a rotating seat mechanism and a lifting clamping mechanism are arranged in the carrier, a feeding hole is formed in one side of the carrier, an ion source is arranged at one side of the reaction cavity, the output end of the ion source faces towards the carrier, and the correction mechanism comprises a second motor, a connecting plate and a correction plate, the second motor is fixedly arranged in the carrier, and the output end of the second motor extends to the front surface of the outside of the carrier in a penetrating way. The invention effectively improves the etching uniformity through the cooperation of the dynamic adjustment of the correction mechanism and each mechanism, has simple structure, convenient installation and strong adaptability, and can meet the processing requirement of high-precision semiconductor devices.

Inventors

  • YUAN WEI
  • WANG JUN

Assignees

  • 合肥微芸半导体科技有限公司

Dates

Publication Date
20260505
Application Date
20260309

Claims (6)

  1. 1. The utility model provides a rotation regulation formula ion beam etching uniformity correction structure, its characterized in that includes reaction cavity (1), the back department of reaction cavity (1) is fixed mounting has first motor (2), the output of first motor (2) runs through and extends to in the inside of reaction cavity (1), just the output fixedly connected with microscope carrier (3) of first motor (2), the internally mounted of microscope carrier (3) has roating seat mechanism and lift clamping mechanism, one side of microscope carrier (3) is equipped with the feed inlet, one side department of reaction cavity (1) is equipped with ion source (4), ion source (4) output is towards microscope carrier (3); the correction mechanism comprises a second motor (5), a connecting plate (6) and a correction plate (7), wherein the second motor (5) is fixedly installed inside the carrying platform (3), the output end of the second motor (5) penetrates through and extends to the front outside of the carrying platform (3), the L-shaped connecting plate (6) is detachably installed at the output end of the second motor (5), and the correction plate (7) is fixedly connected to the L-shaped turning surface of the connecting plate (6).
  2. 2. The structure according to claim 1, wherein the correction plate (7) is located directly above the stage (3), and the size of the correction plate (7) is larger than the clamping station size of the stage (3).
  3. 3. The rotation-adjusting ion beam etching uniformity correction structure according to claim 1, wherein an output end of the second motor (5) is connected with a rotating shaft (8) through a coupling, a rectangular clamping sleeve block (9) is arranged at the middle position of the rotating shaft (8), a clamping sleeve groove (10) is formed in the bottom end of the connecting plate (6), the clamping sleeve groove (10) is matched and clamped with the clamping sleeve block (9), a locking nut (11) is arranged at the shaft end of the rotating shaft (8) through a screwed connection, and the locking nut (11) is tightly abutted to the surface of the connecting plate (6).
  4. 4. The structure according to claim 1, wherein the connection plate (6) is made of graphite material, and the correction plate (7) is also made of graphite material.
  5. 5. The structure according to claim 1, wherein the rotating base mechanism comprises a third motor (13) and a rotating table (14), the third motor (13) is installed inside the carrier (3), and the bottom of the rotating table (14) is connected with the output end of the third motor (13).
  6. 6. The structure according to claim 5, wherein the lifting and clamping mechanism comprises lifting cylinders (15) and annular pressing plates (12), the lifting cylinders (15) are arranged in two, the lifting cylinders (15) are fixedly mounted in the carrier (3) and symmetrically distributed on the outer side of the rotary table (14), the bottoms of the annular pressing plates (12) are fixedly connected with the telescopic ends of the two lifting cylinders (15), and the annular pressing plates (12) are located above the rotary table (14).

Description

Rotary adjusting type ion beam etching uniformity correction structure Technical Field The invention relates to the technical field of semiconductors, in particular to a rotation-adjusting ion beam etching uniformity correction structure. Background In the field of semiconductor manufacturing, ion beam etching technology is one of key technologies in micro-nano structure processing by virtue of the advantages of high etching precision and strong directivity, and is widely applied to manufacturing processes of various semiconductor devices. The ion beam etching equipment has the core working principle that the ion source emits high-energy ion beams to bombard the surface of the wafer to realize selective removal of materials, and the etching uniformity directly determines the performance consistency and the yield of the semiconductor device. In the existing ion beam etching equipment, a circular ion source and a carrying platform capable of rotating around an X axis are generally configured, and the angle between the carrying platform and the ion source can be adjusted around a Y axis so as to realize adjustment of etching angles of different ion beams. However, in the etching scene with a large angle of incidence, the distance from the near end (A) to the far end (B) of the wafer etching area to the ion source is obviously different, so that the bombardment intensity of the ion beam to the near end is higher than that to the far end, and further, a large etching rate difference is formed, the etching uniformity is seriously damaged, and the processing requirement of a high-precision semiconductor device cannot be met. In order to improve etching uniformity, the prior art relies on complex ion source optimization or carrier motion parameter adjustment, and lacks an adaptive correction structure special for the difference of the etching rates at the far end and the near end. Even if some devices try to interfere with ion beam distribution through simple components, the problems of unreasonable structural design exist that either the terminal shape is fixed and can not be flexibly replaced according to etching requirements, or the devices are inconvenient to install and detach and difficult to adapt to ion sources and carriers with different specifications, or the movement mode is single and the speed difference under different etching angles can not be accurately compensated. In addition, the defects of unstable connection guiding, complicated driving control and the like of the existing correction related structure are common, and convenient and efficient etching uniformity correction is difficult to realize. Therefore, there is a need for an ion beam etching correction mechanism with simple structure, convenient installation and flexible movement mode, so as to solve the problem of poor speed of the far end and the near end during large-angle etching. Disclosure of Invention The invention discloses a rotation-adjusting type ion beam etching uniformity correction structure, which is characterized in that a correction mechanism is arranged, a correction plate can flexibly rotate under the drive of a second motor, the difference of the speeds of the far end and the near end of a wafer under different etching angles can be accurately compensated, the correction plate is matched with a detachable connection plate design, the correction plate adapting to different etching requirements is convenient to quickly replace, the installation and the detachment are convenient, the etching uniformity and the equipment adaptability are effectively improved, and the problems in the background technology are solved. In order to solve the technical problems, the invention is realized by the following technical scheme: The invention relates to a rotation-adjusting type ion beam etching uniformity correction structure, which comprises a reaction cavity, wherein a first motor is fixedly arranged at the back surface of the reaction cavity, the output end of the first motor extends into the interior of the reaction cavity in a penetrating way, the output end of the first motor is fixedly connected with a carrier, a rotating seat mechanism and a lifting clamping mechanism are arranged in the carrier, a feeding hole is arranged at one side of the carrier, an ion source is arranged at one side of the reaction cavity, and the output end of the ion source faces the carrier; The correction mechanism comprises a second motor, a connecting plate and a correction plate, wherein the second motor is fixedly arranged in the carrier, the output end of the second motor penetrates through and extends to the front outer surface of the carrier, the L-shaped connecting plate is detachably arranged at the output end of the second motor, and the correction plate is fixedly connected to the L-shaped turning surface of the connecting plate. Further, the correction plate is located directly above the carrier, and the size of the correction plate is larg