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CN-121983489-A - Ion implantation equipment

CN121983489ACN 121983489 ACN121983489 ACN 121983489ACN-121983489-A

Abstract

The application relates to the technical field of semiconductor ion implantation, in particular to ion implantation equipment, which comprises an ion source for generating ions, an ion extraction system connected with an output end of the ion source and used for guiding the ions to form an ion beam, a mass analysis device connected with the output end of the ion extraction system and used for performing primary screening on the ion beam, and an ion beam adjustment module connected with the output end of the mass analysis device and used for performing re-screening and width adjustment on the ion beam. The ion beam adjusting module comprises a processing cavity connected to the output end of the mass analysis device, a beam adjusting device arranged on one side of the processing cavity and a beam magnetic field calibrating device arranged on the opposite side of the processing cavity. The beam current adjusting device is provided with a slit capable of passing through the ion beam, the beam current magnetic field calibrating device is provided with a channel capable of passing through the ion beam, the slit and the channel are both positioned in the processing cavity, the slit is positioned between the output end of the mass analysis device and the channel, the slit can move along a straight line and is matched with the ion beam moving path, and the channel can move along a curve and is matched with the ion beam moving path. The application enables the ion implanter to adapt to the moving paths of different ion beams by independently controlling the movement of the slit and the channel, thereby expanding the applicability of the ion implanter.

Inventors

  • CAO JIANWEI
  • SHEN WENJIE
  • HUANG JIANLI
  • YAO QINGYU
  • LI JIE
  • FENG GUODONG

Assignees

  • 浙江求是创芯半导体设备有限公司

Dates

Publication Date
20260505
Application Date
20251230

Claims (10)

  1. 1. An ion implantation apparatus comprising: an ion source (100) for generating ions; An ion extraction system (200) coupled to an output of the ion source (100) and configured to direct ions to form an ion beam; The mass analysis device (300) is connected to the output end of the ion extraction system (200) and is used for carrying out primary screening on the ion beam; an ion beam adjustment module (400) connected to the output end of the mass analysis device (300) and used for carrying out re-screening and width adjustment on the ion beam; characterized in that the ion beam adjustment module (400) comprises: A processing chamber (500) connected to an output end of the mass analysis device (300); A beam adjusting device (600) mounted on one side of the processing chamber (500), the beam adjusting device (600) having a slit (631) through which an ion beam can pass, and A beam magnetic field alignment device (700) mounted on an opposite side of the process chamber (500), the beam magnetic field alignment device (700) having a passageway (731) through which an ion beam can pass; The slit (631) and the channel are both positioned inside the processing cavity (500), the slit (631) is positioned between the output end of the mass analysis device (300) and the channel (731), the slit (631) can move along a straight line and match with the ion beam moving path, and the channel (731) can move along a curve and match with the ion beam moving path.
  2. 2. The ion implantation apparatus of claim 1, wherein said beam adjustment means (600) comprises A first installation cavity (610) which is opened towards one side of the processing cavity (500); A first mounting plate (620) disposed at one side of the opening of the first mounting chamber (610) and fixed to the outer wall of the processing chamber (500); Two baffles (630) mounted in the process chamber (500), the slit (631) being formed by a gap between the two baffles (630), and Two groups of driving components (640) are arranged on one side of the first mounting plate (620) which is away from the processing cavity (500) and penetrates through the side wall of the first mounting cavity (610), and the two groups of driving components (640) are respectively connected with the corresponding baffle plates (630) and drive the corresponding baffle plates (630) to move close to or far away from each other or synchronously; the beam magnetic field calibration device (700) comprises: A second installation cavity (710) which is opened toward one side of the processing cavity (500); The second mounting plate (720) is arranged on one side of the opening of the second mounting cavity (710) and is fixed on the outer wall of the opposite side of the processing cavity (500) connected with the first mounting plate (620); A magnetic field generating structure (730) having one end mounted in the second mounting cavity (710) and the other end extending into the processing cavity (500), the passage (731) being located at a portion of the magnetic field generating structure (730) located in the processing cavity (500), and The position adjusting structure (740) is arranged on one side, away from the processing cavity (500), of the second mounting plate (720), and is connected to one end, in the second mounting cavity (710), of the magnetic field generating structure (730) through the side wall of the second mounting cavity (710); The first mounting cavity (610), the processing cavity (500) and the second mounting cavity (710) are in communication with each other.
  3. 3. The ion implantation apparatus of claim 2, wherein the first mounting plate (620) is positioned at a bottom of the processing chamber (500) and the second mounting plate (720) is positioned below a top of the processing chamber (500).
  4. 4. An ion implantation apparatus as claimed in claim 2 or 3, wherein the inner wall of the processing chamber (500) is covered with a graphite protection plate (530).
  5. 5. The ion implantation apparatus of claim 4, wherein said graphite protective plate (530) covers at least part of the opening of the first mounting cavity (610); A vertical rod (632) is connected between the baffle (630) and the driving assembly (640), one end of the vertical rod (632) penetrates through the graphite protection plate (530) and is connected to the baffle (630), and a moving groove (531) is formed in the graphite protection plate (530) corresponding to the moving range of the vertical rod (632).
  6. 6. The ion implantation apparatus according to claim 5, wherein a graphite barrier (550) is fixed on the graphite protection plate (530) at a position close to a mouth of the moving groove (531), the graphite barrier (550) is located between the baffle (630) and an output end of the mass analysis device (300), a length of the graphite barrier (550) is not smaller than an opening length of the mouth of the moving groove (531), and a projection of a side of the graphite barrier (550) away from the fixed side on a plane where the baffle (630) faces the side of the mass analysis device (300) is located on the baffle (630).
  7. 7. The ion implantation apparatus of claim 2, wherein a first mounting port (510) is provided on a side of the processing chamber (500) to which the first mounting plate (620) is connected, and wherein a profile of the first mounting port (510) is greater than a projection profile of the first mounting chamber (610) opening on the first mounting plate (620).
  8. 8. The ion implantation apparatus of claim 7, wherein a transition plate (560) is sandwiched between the first mounting plate (620) and an outer wall of the processing chamber (500), an edge of the transition plate (560) is fixed on the outer wall of the processing chamber (500) and covers an edge of the first mounting opening (510), the first mounting plate (620) is fixed on a side of the transition plate (560) away from the processing chamber (500), a transition mounting opening (561) is formed in a middle portion of the transition plate (560), and the transition mounting opening (561) is not smaller than an opening of the first mounting chamber (610).
  9. 9. The ion implantation apparatus of claim 8, wherein a portion of the transition plate (560) corresponding to the first mounting port (510) is flush with an inner wall of the processing chamber (500).
  10. 10. The ion implantation apparatus of claim 2, wherein an outer wall of the magnetic field generating structure (730) is covered with a graphite protective plate (530), and the graphite protective plate (530) of the magnetic field generating structure (730) on a side facing the baffles (630) extends toward an inner wall of the processing chamber (500) to form an extension (540), and a periphery of the extension (540) exceeds a periphery of two baffles (630).

Description

Ion implantation equipment Technical Field The application relates to the technical field of semiconductor ion implantation, in particular to ion implantation equipment. Background Ion implantation equipment is one of the key devices in semiconductor chip fabrication, and its core function is to implant ions of a specific kind and specific energy into a specific region of a wafer, thereby changing the electrical properties of that region. The ion implantation equipment mainly comprises an ion source and ion extraction system, a beam line transmission system, a target chamber and terminal system and a vacuum and control system. Ions generated by the ion source form ion beams with certain flow velocity through the ion extraction system, then the ion beams with specific types and specific energies are formed through screening of the beam transmission system and then are input into the target chamber, and the ion beams are injected into wafers in the target chamber. The beam line transmission system is a core part of the ion implantation equipment, and is used for purifying, accelerating and shaping the rough and mixed ion beam led out from the ion source and finally accurately and uniformly projecting the rough and mixed ion beam onto the surface of the wafer. The stability and accuracy of this process directly determine the three main core parameters of ion implantation, dopant species, implant energy, and implant uniformity. The beam entering the beam line transmission system needs to be screened out of specific types of beam through the mass analysis device, then the ion beam is screened out through the beam adjusting device, stray ions deviating from the orbit are removed, and then the width of the ion beam in the vertical direction is adjusted through the beam magnetic field calibrating device. However, the current beam adjusting device and the current beam magnetic field calibrating device are generally integrally moved as an integral structure, so that the ion beam of the beam adjusting device and the ion beam of the current beam magnetic field calibrating device are difficult to match with the moving path of the ion beam at the same time. Disclosure of Invention In order to solve the defects in the prior art, one of the purposes of the present application is to provide an ion implantation apparatus, which can independently adjust the positions of a beam adjusting device and a beam magnetic field calibrating device, so that the beam adjusting device and the beam magnetic field calibrating device can simultaneously match the moving path of an ion beam. In order to achieve the above purpose, the application adopts the following technical scheme: an ion implantation apparatus comprising: An ion source for generating ions; an ion extraction system connected to the output of the ion source and used for guiding ions to form an ion beam; The mass analysis device is connected to the output end of the ion extraction system and is used for carrying out primary screening on the ion beam; the ion beam adjusting module is connected to the output end of the mass analysis device and is used for carrying out rescreening and width adjustment on the ion beam; Wherein the ion beam adjustment module comprises: The processing cavity is connected with the output end of the mass analysis device; a beam adjusting device installed at one side of the processing cavity and having a slit through which the ion beam can pass, and The beam magnetic field calibrating device is arranged on the opposite side of the processing cavity and provided with a channel capable of passing through an ion beam; The slit and the channel are both positioned in the processing cavity, the slit is positioned between the output end of the mass analysis device and the channel, the slit can move along a straight line and match with the ion beam moving path, and the channel can move along a curve and match with the ion beam moving path. With the above arrangement, the slit can be aligned with the ion beam moving path by moving the slit linearly. Since the slit is close to the output end of the mass analysis device, horizontal linear movement can satisfy the screening of the ion beam, so that the slit can remove stray ions off-track. When different ion beams need to enter the channel through the slit, the movement curvature of the ion beams in the mass analysis device is different, so that an included angle of not less than 0 is formed between the movement path of the ion beams after the ion beams are output from the slit and the central axis line of the output end face of the mass analysis device, and the channel needs to adapt to the ion beams so that the width direction of the channel is perpendicular to the movement path of the ion beams, therefore, the movement path of the channel needs to move along a curve. By controlling the movement of the slit and the passage separately, the ion implanter can adapt to the movement paths of different ion beams, ther