CN-121983494-A - Etching equipment with detection system and detection method

CN121983494ACN 121983494 ACN121983494 ACN 121983494ACN-121983494-A

Abstract

The application provides etching equipment with a detection system and a detection method, and relates to the technical field of semiconductor etching, wherein the etching equipment comprises: etching structure, detecting system and adjustment structure, etching structure includes the base, electrostatic chuck, focus ring and lid ring, detecting system is located etching structure, including first polar plate, second polar plate and electric capacity detection module, first polar plate is located focus ring, the second polar plate is located the base, first polar plate and second polar plate constitute electric capacity, electric capacity detection module obtains the appearance value of above-mentioned electric capacity, and obtain focus ring's position deviation based on the appearance value, adjustment structure adjusts focus ring's position based on position deviation, eliminate focus ring's position deviation, make focus ring's central point put and electrostatic chuck's central point put coincidence, thereby can guarantee focus ring's position accuracy, with the etching effect of assurance etching equipment to the wafer.

Inventors

DONG QI
YIN GEHUA
LIU HAIYANG
YE PENG
ZHENG DEWEI
HU DONGDONG
SHI XIAOLI
XU KAIDONG

Assignees

江苏鲁汶仪器股份有限公司

Dates

Publication Date: 20260505
Application Date: 20241029

Claims (13)

1. An etching apparatus having a detection system, comprising: the etching structure is used for realizing etching of the wafer and comprises a base, an electrostatic chuck, a focusing ring and a cover ring, wherein the electrostatic chuck is positioned on the base, the cover ring surrounds the base, and the focusing ring is positioned on the cover ring and surrounds the electrostatic chuck; The detection system is used for acquiring the position deviation of the focusing ring relative to the electrostatic chuck, and is positioned in the etching structure and comprises a first polar plate, a second polar plate and a capacitance detection module, wherein the first polar plate is positioned in the focusing ring, the second polar plate is positioned in the base, the first polar plate and the second polar plate form a capacitance, the capacitance detection module is positioned in the focusing ring and is used for acquiring the capacitance value of the capacitance and acquiring the position deviation based on the capacitance value, the position deviation comprises a first position deviation and a second position deviation, the first position deviation represents the deviation of the central position of the focusing ring and the central position of the electrostatic chuck on a first plane, the second position deviation represents the deviation of the central position of the focusing ring and the central position of the electrostatic chuck on a second plane, the first plane is parallel to the plane of the electrostatic chuck, the second plane is perpendicular to the plane of the electrostatic chuck, and the first plane and the second plane are perpendicular to each other; and the adjusting structure is used for adjusting the position of the focusing ring based on the position deviation and eliminating the position deviation of the focusing ring relative to the electrostatic chuck so as to ensure that the central position of the focusing ring is coincident with the central position of the electrostatic chuck.
2. The etching apparatus with a detection system according to claim 1, wherein the first electrode plate comprises N first sub-electrode plates and M second sub-electrode plates, N is greater than or equal to 1, M is greater than or equal to 1, the N first sub-electrode plates are located at the side of the focus ring and circumferentially arranged around the electrostatic chuck, and the M second sub-electrode plates are located at the bottom of the focus ring and circumferentially arranged around the electrostatic chuck; the second electrode plate comprises N third sub-electrode plates and M fourth sub-electrode plates, the N third sub-electrode plates and the N first sub-electrode plates are in one-to-one correspondence to form N first capacitors, and the M fourth sub-electrode plates and the M second sub-electrode plates are in one-to-one correspondence to form M second capacitors; The first capacitor obtains a first position deviation, and the second capacitor obtains a second position deviation.
3. The etching apparatus with detection system of claim 2, wherein the first plate comprises 4 first sub-plates and 4 second sub-plates, the second plate comprising four third sub-plates and 4 fourth sub-plates.
4. The etching apparatus with a detection system according to claim 2, wherein the size of the first sub-plate is smaller than the size of the third sub-plate, and a projection of the first sub-plate along a first direction is located in the third sub-plate, the first direction being parallel to a plane in which the susceptor is located; the size of the second sub-polar plate is smaller than that of the fourth sub-polar plate, and the projection of the second sub-polar plate along the second direction is positioned in the fourth sub-polar plate, and the second direction is parallel to the arrangement direction of the base and the electrostatic chuck; the first sub-polar plate and the second sub-polar plate have the same size, and the third sub-polar plate and the fourth sub-polar plate have the same size.
5. The etching apparatus with a detection system according to claim 1, wherein a positioning groove is provided on an outer side of the focus ring, the positioning groove being located at a preset position such that the first electrode plate and the second electrode plate constitute the capacitor.
6. The etching equipment with the detection system according to claim 1, wherein the detection system further comprises a camera module, the camera module is positioned on the focusing ring and comprises a processing unit and Q cameras circumferentially arranged around the electrostatic chuck, and Q is more than or equal to 3; The Q cameras respectively acquire Q clearance values, wherein the clearance is the radial distance between the focusing ring and the electrostatic chuck; the processing unit obtains the first positional deviation based on the Q gap values.
7. The etching apparatus with a detection system according to claim 1 or 6, wherein the detection system further comprises: The information transmission module is used for transmitting the first position deviation and the second position deviation to the adjustment structure; The information transmission module is WIFI or Bluetooth.
8. The etching apparatus with a detection system according to claim 1 or 6, wherein the adjustment structure comprises a lifting structure and a robot; k openings which are circumferentially distributed around the base are formed in the cover ring, K is more than or equal to 3, the openings extend upwards from the bottom of the cover ring to the bottom of the focusing ring along a first direction, and the first direction is parallel to the distribution directions of the base and the electrostatic chuck; The lifting structure comprises K lifting pins which are respectively positioned in the K holes, and the focusing ring is lifted and used for eliminating the first position deviation; The manipulator drives the focusing ring to move and is used for eliminating the second position deviation.
9. An etching apparatus with a detection system according to claim 1 or 6, wherein the detection system further comprises a power supply for powering the components in the detection system.
10. The detection method is characterized by being applied to etching equipment with a detection system, the etching equipment comprises an etching structure, the detection system and an adjustment structure, the etching structure is used for realizing etching of a wafer, the etching structure comprises a base, an electrostatic chuck, a focusing ring and a cover ring, the electrostatic chuck is located on the base, the cover ring surrounds the base, the focusing ring is located on the cover ring and surrounds the electrostatic chuck, the detection system is used for obtaining position deviation of the focusing ring relative to the electrostatic chuck, the detection system is located on the etching structure and comprises a first polar plate, a second polar plate and a capacitance detection module, the first polar plate is located on the focusing ring, the second polar plate is located on the base, and the first polar plate and the second polar plate form capacitance, and the detection method comprises the following steps of: The capacitance detection module acquires the capacitance value of the capacitance and acquires the position deviation based on the capacitance value, wherein the position deviation comprises a first position deviation and a second position deviation, the first position deviation represents the deviation of the central position of the focusing ring and the central position of the electrostatic chuck on a first plane, the second position deviation represents the deviation of the central position of the focusing ring and the central position of the electrostatic chuck on a second plane, the first plane is parallel to the plane of the electrostatic chuck, the second plane is perpendicular to the plane of the electrostatic chuck, and the first plane and the second plane are perpendicular; The adjusting structure adjusts the position of the focusing ring based on the position deviation, and eliminates the position deviation of the focusing ring relative to the electrostatic chuck so as to ensure that the center position of the focusing ring and the center position of the electrostatic chuck coincide.
11. The detection method according to claim 10, wherein the first electrode plate includes N first sub-electrode plates and M second sub-electrode plates, N is greater than or equal to 2, M is greater than or equal to 2, the N first sub-electrode plates are located on a side surface of the focusing ring and circumferentially arranged around the electrostatic chuck, the M second sub-electrode plates are located at a bottom of the focusing ring and circumferentially arranged around the electrostatic chuck, the second electrode plate includes N third sub-electrode plates and M fourth sub-electrode plates, the N third sub-electrode plates and the N first sub-electrode plates form N first capacitors in one-to-one correspondence, the M fourth sub-electrode plates and the M second sub-electrode plates form M second capacitors in one-to-one correspondence, and the obtaining the capacitance value of the capacitors by using the capacitance detection module and the position deviation based on the capacitance value includes: the capacitance detection module acquires capacitance values of the first capacitor and the second capacitor; If the capacitance values of at least two first capacitors of the N first capacitors are different, the focusing ring has the first position deviation, and the capacitance detection module acquires the first position deviation based on the capacitance values of at least two first capacitors; and if the capacitance values of at least two second capacitors of the M second capacitors are different, the focusing ring has the second position deviation, and the capacitance detection module acquires the second position deviation based on the capacitance values of at least two second capacitors.
12. The inspection method of claim 10 or 11, wherein the inspection system further comprises an image capturing module, the image capturing module comprising a processing unit and Q cameras circumferentially arranged around the electrostatic chuck, Q being greater than or equal to 3, wherein the acquiring the capacitance value of the capacitor using the capacitance inspection module and the positional deviation based on the capacitance value further comprises: The Q cameras respectively acquire Q clearance values, wherein the clearance values are radial distances between the focusing ring and the electrostatic chuck; the processing unit obtains the first positional deviation based on the Q gap values.
13. The method of claim 12, wherein the adjusting structure adjusting the position of the focus ring based on the positional deviation comprises: The adjustment structure adjusts the position of the focus ring based on the positional deviation; And meanwhile, the capacitance detection module acquires the capacitance values of the N first capacitors and the M second capacitors, and if the capacitance values of the N first capacitors are the same and the capacitance values of the M second capacitors are the same, the position deviation of the focusing ring relative to the electrostatic chuck is eliminated.

Description

Etching equipment with detection system and detection method Technical Field The application relates to the technical field of semiconductor etching, in particular to etching equipment with a detection system and a detection method. Background As semiconductor devices are being developed toward smaller dimensions and higher precision, wafer processing is increasingly demanding on dry etching techniques, equipment, and the like. The inductively coupled plasma etching technology (Inductively Coupled Plasma, abbreviated as ICP) has the advantages of high etching rate, good directivity, high selection ratio, high contour control precision and the like, and is widely applied to various large wafer processing factories. However, for ICP etching equipment, the positional deviation of the focus ring from the center position of the electrostatic chuck will directly affect wafer etch uniformity and etch rate. For example, affects the electric field and sheath distribution over the electrostatic chuck, which in turn results in plasma maldistribution over the wafer, particularly near the focus ring, affecting etch rate and uniformity at the wafer edge. Disclosure of Invention In view of the above, the present application provides an etching apparatus and a detection method with a detection system, and the scheme is as follows: An etching apparatus having a detection system, comprising: the etching structure is used for realizing etching of the wafer and comprises a base, an electrostatic chuck, a focusing ring and a cover ring, wherein the electrostatic chuck is positioned on the base, the cover ring surrounds the base, and the focusing ring is positioned on the cover ring and surrounds the electrostatic chuck; The detection system is used for acquiring the position deviation of the focusing ring relative to the electrostatic chuck, and is positioned in the etching structure and comprises a first polar plate, a second polar plate and a capacitance detection module, wherein the first polar plate is positioned in the focusing ring, the second polar plate is positioned in the base, the first polar plate and the second polar plate form a capacitance, the capacitance detection module is positioned in the focusing ring and is used for acquiring the capacitance value of the capacitance and acquiring the position deviation based on the capacitance value, the position deviation comprises a first position deviation and a second position deviation, the first position deviation represents the deviation of the central position of the focusing ring and the central position of the electrostatic chuck on a first plane, the second position deviation represents the deviation of the central position of the focusing ring and the central position of the electrostatic chuck on a second plane, the first plane is parallel to the plane of the electrostatic chuck, the second plane is perpendicular to the plane of the electrostatic chuck, and the first plane and the second plane are perpendicular to each other; and the adjusting structure is used for adjusting the position of the focusing ring based on the position deviation and eliminating the position deviation of the focusing ring relative to the electrostatic chuck so as to ensure that the central position of the focusing ring is coincident with the central position of the electrostatic chuck. Optionally, the first polar plate includes N first sub polar plates and M second sub polar plates, N is greater than or equal to 1, M is greater than or equal to 1, the N first sub polar plates are located at the side surface of the focusing ring and circumferentially arranged around the electrostatic chuck, and the M second sub polar plates are located at the bottom of the focusing ring and circumferentially arranged around the electrostatic chuck; the second electrode plate comprises N third sub-electrode plates and M fourth sub-electrode plates, the N third sub-electrode plates and the N first sub-electrode plates are in one-to-one correspondence to form N first capacitors, and the M fourth sub-electrode plates and the M second sub-electrode plates are in one-to-one correspondence to form M second capacitors; The first capacitor obtains a first position deviation, and the second capacitor obtains a second position deviation. Optionally, the first electrode plate includes 4 first sub-electrode plates and 4 second sub-electrode plates, and the second electrode plate includes four third sub-electrode plates and 4 fourth sub-electrode plates. Optionally, the size of the first sub-polar plate is smaller than that of the third sub-polar plate, and the projection of the first sub-polar plate along the first direction is located in the third sub-polar plate, and the first direction is parallel to the plane where the base is located; the size of the second sub-polar plate is smaller than that of the fourth sub-polar plate, and the projection of the second sub-polar plate along the second direction is positio