CN-121983496-A - Reaction chamber for plasma treatment and semiconductor treatment equipment

CN121983496ACN 121983496 ACN121983496 ACN 121983496ACN-121983496-A

Abstract

The invention relates to the technical field of wafer processing equipment, in particular to a reaction chamber for plasma processing and semiconductor processing equipment, which comprises a dielectric window, an induction coil and a movable shielding piece, wherein the dielectric window is arranged at the top of a processing chamber, the induction coil is arranged on the outer side of the dielectric window in a surrounding mode, the movable shielding piece is arranged between the dielectric window and the induction coil in a surrounding mode and can move up and down or stretch along the axial direction of the dielectric window, the movable shielding piece moves to a position staggered with the induction coil in the plasma ignition stage, and after plasma ignition is completed, the movable shielding piece is reset to a position between the dielectric window and the induction coil.

Inventors

ZHANG PENGBING
TANG LE
GU CHENGLEI

Assignees

上海邦芯半导体科技有限公司

Dates

Publication Date: 20260505
Application Date: 20260407

Claims (12)

1. A reaction chamber for plasma processing comprising a dielectric window, an induction coil, and a movable shield; The dielectric window is arranged at the top of the processing chamber; The induction coil is arranged on the outer side of the dielectric window in a surrounding mode, is connected with an external radio frequency power supply and is used for generating an alternating magnetic field which can enter the dielectric window so as to induce an eddy current electric field for accelerating free electrons to strike process gas to generate plasma through the alternating magnetic field; the movable shielding piece is arranged between the dielectric window and the induction coil in a surrounding mode and can do lifting movement or telescopic movement along the axial direction of the dielectric window; And after the plasma ignition is finished, the movable shielding piece is reset to a position between the medium window and the induction coil, and the orthographic projection structure of the movable shielding piece on the medium window covers the orthographic projection structure of the induction coil on the medium window so as to shield and protect the medium window.
2. The reaction chamber for plasma processing according to claim 1, wherein the movable shielding member comprises a plurality of annular shielding portions which are sequentially connected in the axial direction, the annular shielding portions close to the processing chamber are connected with the top of the processing chamber, any two adjacent annular shielding portions comprise a first annular shielding portion and a second annular shielding portion, the butt joint end portion of the first annular shielding portion is provided with an accommodating groove which extends in the axial direction, and at least part of the second annular shielding portion is slidably inserted into the accommodating groove and can move towards or away from the bottom of the accommodating groove so as to reduce or increase the overall height of the movable shielding member in the axial direction.
3. The reaction chamber for plasma processing of claim 2, wherein the sidewall of the receiving groove near the open end is provided with an axially extending anti-drop groove, the sidewall of the second annular shielding part near the insertion end thereof is provided with an anti-drop block, and the anti-drop block is slidably disposed in the anti-drop groove to prevent the second annular shielding part from being dropped out of the receiving groove.
4. The reaction chamber for plasma processing according to claim 2, wherein the annular shield farthest from the top of the processing chamber among the plurality of annular shields is a third annular shield, the third annular shield being in driving connection with an axial driving member that drives the third annular shield to move axially toward or away from the bottom of the receiving groove of the annular shield below, the driving force being sequentially transmitted by a nested sliding fit between the annular shields, so that the annular shield in an upper position slides in the receiving groove of the annular shield in a lower position, thereby reducing or increasing the overall height of the movable shield in the axial direction.
5. The reaction chamber for plasma processing of claim 4 further comprising a first sensor and a first processor, wherein the first processor is respectively connected with the axial driving member and the first sensor, the first sensor is disposed inside or outside the dielectric window and is used for collecting plasma concentration in the dielectric window, the first processor controls the axial driving member to drive the movable shielding member to do telescopic movement along the axial direction of the dielectric window according to an ignition command signal, and controls the axial driving member to drive the movable shielding member to reset between the dielectric window and the induction coil after the plasma concentration is greater than or equal to a preset threshold value so as to shield and protect the dielectric window.
6. The reaction chamber for plasma processing according to claim 2, wherein a first slit extending in a circumferential direction is provided in the first annular shield portion, a second slit extending in an axial direction is provided in the second annular shield portion, a plurality of the first slits and the second slits are provided in the second annular shield portion, the first slits and the second slits are arranged in an axial direction, when the movable shield is reset between the dielectric window and the induction coil, the first slits and the second slits in overlapping areas of the first annular shield portion and the second annular shield portion overlap to form a first channel for the alternating magnetic field to enter the dielectric window, and the first slits and the second slits in non-overlapping areas of the first annular shield portion and the second annular shield portion independently form a second channel for the alternating magnetic field to enter the dielectric window.
7. The reaction chamber for plasma processing of claim 6 wherein the first slit and the second slit each comprise a plurality of circumferentially spaced sub-slits; The induction coil comprises a plurality of annular sections which are arranged along the axial direction at intervals, and connecting sections which are connected with two adjacent annular sections, when the movable shielding piece is reset to the position between the medium window and the induction coil, the front projection structures of the sub-slits on the medium window are all positioned between the front projection structures of the adjacent two annular sections on the medium window, and the front projection structures of the connecting sections on the medium window are positioned between the front projection structures of the sub-slits on the medium window, which are circumferentially adjacent.
8. The reaction chamber for plasma processing according to claim 1, wherein the movable shielding member comprises a pneumatic telescopic shielding pipe and an air pumping member, the pneumatic telescopic shielding pipe is arranged at the top of the processing chamber, an air storage cavity is arranged in the pipe wall of the pneumatic telescopic shielding pipe, and the air pumping member is communicated with the air storage cavity so as to pump and charge the air storage cavity through the air pumping member, so that the pneumatic telescopic shielding pipe can do telescopic motion.
9. The reaction chamber for plasma processing of claim 8 wherein the movable shield further comprises a second sensor and a second processor, the second processor coupled to the pumping plenum and the second sensor, the second sensor disposed within the dielectric window for collecting plasma concentration within the dielectric window; The second processor controls the pumping and inflating piece to pump air from the air storage cavity of the pneumatic telescopic shielding pipe according to an ignition command signal, so that the pneumatic telescopic shielding pipe is made to perform shrinkage motion, the orthographic projection structure of the pneumatic telescopic shielding pipe on the dielectric window after the shrinkage motion and the orthographic projection structure of the induction coil on the dielectric window are staggered, and after the plasma concentration is received to be greater than or equal to a preset threshold value, the pumping and inflating piece is controlled to pump air into the air storage cavity of the pneumatic telescopic shielding pipe, so that the pneumatic telescopic shielding pipe is reset between the dielectric window and the induction coil, and shielding protection is performed on the dielectric window.
10. The reaction chamber for plasma processing according to claim 8, wherein the induction coil comprises a plurality of annular sections arranged at intervals along the axial direction, and a connecting section connecting two adjacent annular sections, a plurality of third slits extending circumferentially are arranged on the pneumatic telescopic shielding tube in a penetrating manner so as to form a third channel for the alternating magnetic field to enter the dielectric window, the third slits are arranged between two adjacent annular sections, and the orthographic projection structures of the third slits on the dielectric window and the orthographic projection structures of the connecting section on the dielectric window are staggered.
11. The reaction chamber for plasma processing according to claim 8, wherein the movable shielding member further comprises a plurality of guiding members, the plurality of guiding members are arranged at the top of the processing chamber in an equidistant annular manner and extend along the axial direction, a plurality of guiding holes which are arranged along the axial direction in a penetrating manner are arranged on the pipe wall of the pneumatic telescopic shielding pipe, the guiding holes are not communicated with the gas storage cavity, and the guiding members are movably arranged in the guiding holes in a one-to-one correspondence manner so as to play a guiding role when the pneumatic telescopic shielding pipe performs axial telescopic motion.
12. A semiconductor processing apparatus, comprising: a reaction chamber for plasma processing according to any one of claims 1 to 11; a process gas supply system in communication with the dielectric window for providing a process gas into the dielectric window; The vacuum system is communicated with the dielectric window and is used for extracting gas in the dielectric window and maintaining the vacuum degree required by the dielectric window; the radio frequency power supply is electrically connected with the induction coil.

Description

Reaction chamber for plasma treatment and semiconductor treatment equipment Technical Field The present invention relates to the field of wafer processing equipment, and in particular, to a reaction chamber for plasma processing and a semiconductor processing apparatus. Background In an ICP type plasma photoresist removing or etching device for a high-hydrogen process, although a high-frequency electromagnetic field generated by an induction coil can effectively excite plasma, unavoidable capacitive coupling between the induction coil and gas in a reaction cavity can cause the plasma (especially hydrogen plasma) to produce strong bombardment on a quartz dielectric window, so that corrosion is caused. Although the faraday shield arranged between the induction coil and the dielectric window can alleviate the problem to a certain extent, the cross point-shaped position of the slit open area and the induction coil still can be intensively bombarded by hydrogen ions, and the dielectric window can be eroded and particles are peeled off after long-term use, so that wafers are polluted, and the service life of the machine and the process yield are affected. Disclosure of Invention The invention provides a reaction chamber for plasma treatment and semiconductor treatment equipment, and aims to solve the problem that a magnetic field is shielded during ignition by arranging a movable shielding piece, effectively block bombardment of high-energy ions on a dielectric window in a steady-state process, reduce corrosion and particulate generation of the dielectric window and improve equipment service life and process yield. To achieve the above object, the present invention provides a reaction chamber for plasma processing, comprising a dielectric window, an induction coil, and a movable shield: The dielectric window is arranged at the top of the processing chamber; The induction coil is arranged on the outer side of the dielectric window in a surrounding mode, is connected with an external radio frequency power supply and is used for generating an alternating magnetic field which can enter the dielectric window so as to induce an eddy current electric field for accelerating free electrons to strike process gas to generate plasma through the alternating magnetic field; the movable shielding piece is arranged between the dielectric window and the induction coil in a surrounding mode and can do lifting movement or telescopic movement along the axial direction of the dielectric window; And after the plasma ignition is finished, the movable shielding piece is reset to a position between the medium window and the induction coil, and the orthographic projection structure of the movable shielding piece on the medium window covers the orthographic projection structure of the induction coil on the medium window so as to shield and protect the medium window. Optionally, the movable shielding member comprises a plurality of annular shielding parts which are sequentially connected in an axial direction, the annular shielding parts close to the processing chamber are connected with the top of the processing chamber, any two adjacent annular shielding parts comprise a first annular shielding part and a second annular shielding part, the butt joint end part of the first annular shielding part is provided with an accommodating groove which extends in the axial direction, and at least part of the second annular shielding part is slidably inserted in the accommodating groove and can move towards or away from the bottom of the accommodating groove so as to reduce or increase the overall height of the movable shielding member in the axial direction. Optionally, the lateral wall that the accommodating groove is close to the open end is offered along axial extension's anticreep groove, the lateral wall that the second annular shielding part is close to its grafting tip is provided with the anticreep piece, the anticreep piece slides and locates in the anticreep inslot, in order to prevent the second annular shielding part is followed deviate from in the accommodating groove. Optionally, the annular shielding part farthest from the top of the processing chamber among the plurality of annular shielding parts is a third annular shielding part, the third annular shielding part is in transmission connection with an axial driving part, the axial driving part drives the third annular shielding part to move along the axial direction or back to the bottom of the accommodating groove of the annular shielding part below the third annular shielding part, and the driving force is sequentially transmitted through nested sliding fit among the annular shielding parts, so that the annular shielding part at the upper position slides in the accommodating groove of the annular shielding part at the lower position, and the overall height of the movable shielding part in the axial direction is reduced or increased. Optionally, the reaction chamber for plasma treatm